JPH02125328U - - Google Patents

Info

Publication number
JPH02125328U
JPH02125328U JP3337289U JP3337289U JPH02125328U JP H02125328 U JPH02125328 U JP H02125328U JP 3337289 U JP3337289 U JP 3337289U JP 3337289 U JP3337289 U JP 3337289U JP H02125328 U JPH02125328 U JP H02125328U
Authority
JP
Japan
Prior art keywords
pressure
control mechanism
chemical vapor
vapor phase
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3337289U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3337289U priority Critical patent/JPH02125328U/ja
Publication of JPH02125328U publication Critical patent/JPH02125328U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP3337289U 1989-03-23 1989-03-23 Pending JPH02125328U (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3337289U JPH02125328U (enrdf_load_stackoverflow) 1989-03-23 1989-03-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3337289U JPH02125328U (enrdf_load_stackoverflow) 1989-03-23 1989-03-23

Publications (1)

Publication Number Publication Date
JPH02125328U true JPH02125328U (enrdf_load_stackoverflow) 1990-10-16

Family

ID=31536975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3337289U Pending JPH02125328U (enrdf_load_stackoverflow) 1989-03-23 1989-03-23

Country Status (1)

Country Link
JP (1) JPH02125328U (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003744A (ja) * 2009-06-18 2011-01-06 Denso Corp 表面処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003744A (ja) * 2009-06-18 2011-01-06 Denso Corp 表面処理装置

Similar Documents

Publication Publication Date Title
US6645574B1 (en) Method of forming a thin film
EP0552375A4 (en) Chemical vapor deposition apparatus, method of semiconductor film formation, and method of producing thin film semiconductor device
KR20170113154A (ko) 기판 처리 장치, 가스의 공급 방법, 기판 처리 방법 및 성막 방법
JPS5578524A (en) Manufacture of semiconductor device
KR20170129605A (ko) 막 형성 방법
JPH02125328U (enrdf_load_stackoverflow)
KR920001630A (ko) 기상성장방법 및 그 장치
JPS5898138A (ja) 減圧ｃｖｄ装置
MY132166A (en) Method for tuning barrel reactor purge system
JP3303357B2 (ja) 気相化学反応装置
JPS5817263B2 (ja) 液体ソ−スのガス化方法
JPS5713746A (en) Vapor-phase growing apparatus
Vdovin et al. Isotopic exchange of the molecular oxygen with the oxygen of La sub 0 sub. sub 7 Sr sub 0 sub. sub 3 CoO sub 3 sub- sub/ delta
JPH034929A (ja) 気化方式によるガス発生装置
JPS5493357A (en) Growing method of polycrystal silicon
JPS6430358U (enrdf_load_stackoverflow)
JPH1133390A (ja) 粉末原料気化装置
JPS6421075A (en) Vapor growth method and device under reduced pressure
KR19980052581A (ko) 화학증기 증착장치 및 그 증착속도 제어방어방법
JP2500421Y2 (ja) 低圧化学気相生成装置
JPH01167035U (enrdf_load_stackoverflow)
JPH03205817A (ja) 半導体製造装置
JPH0442929A (ja) 半導体装置の製造方法及び製造装置
Thayer III Sensitivity of the uniform-droplet oxygen-generator output to flow conditions and geometry
JPS59153881A (ja) 皮膜形成装置