JPH02122071A - Manufacture of sputtering target - Google Patents
Manufacture of sputtering targetInfo
- Publication number
- JPH02122071A JPH02122071A JP27238488A JP27238488A JPH02122071A JP H02122071 A JPH02122071 A JP H02122071A JP 27238488 A JP27238488 A JP 27238488A JP 27238488 A JP27238488 A JP 27238488A JP H02122071 A JPH02122071 A JP H02122071A
- Authority
- JP
- Japan
- Prior art keywords
- warpage
- target
- sputtering target
- backing plate
- temp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 230000002411 adverse Effects 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000252233 Cyprinus carpio Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、スパッタリングターゲ、）の製造方法に係り
、特に線膨張係数の小さいターゲットをＣｕやＳ［ＪＳ
のバッキングプレートに接着した時に発生する反りを矯
正するスパッタリングターゲットの製造方法に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a method for manufacturing a sputtering target, in particular a target with a small linear expansion coefficient such as Cu or S [JS
This invention relates to a method for manufacturing a sputtering target that corrects warping that occurs when it is bonded to a backing plate.
（従来の技術とその課題）
ＳｉＯ２やガラス等のターゲットを、ＣｕやＳＵＳのバ
ッキングプレートに接着してスパッタリングターゲット
を製造することが、従来より行われているが、常温に冷
却された時反りが発生する。(Prior art and its problems) Sputtering targets have traditionally been manufactured by bonding a target such as SiO2 or glass to a backing plate of Cu or SUS, but warping occurs when cooled to room temperature. Occur.
この為、スパンター装置にセットすることができず、ま
た少しの反りの場合でもセフ）時には５１０２やガラス
のターゲットは割れてしまうものである。For this reason, it is not possible to set the target in a spunter device, and even if the target is slightly warped, the 5102 or glass target will break.
上記のように反りが発生ずるのは、５１０２やガラスの
線膨張係数が小さいのに対し、ＣｕやＳ［ＪＳの線膨張
係数が大きい為、高温での接着後常温まで冷却すると、
線膨張係数の違いにより必ず発生する現象である。The reason why warping occurs as described above is that 5102 and glass have a small linear expansion coefficient, while Cu and S[JS have a large linear expansion coefficient.
This phenomenon always occurs due to differences in linear expansion coefficients.
そこで本発明は、反りを矯正することのできるスパッタ
リングターゲットの製造方法を提供しようとするもので
ある。Therefore, the present invention aims to provide a method for manufacturing a sputtering target that can correct warpage.
（課題を解決するための手段）
上記課題を解決するための本発明のスパッタリングター
ゲットの製造方法は、線膨張係数の小さいターゲットと
Ｃｕ又はＳＯ３のバッキングプレートとを、Ｉｎをボン
ディング材として接着した後、これをＩｎの融点直下の
温度にして矯正治具上にセットし、逆反り荷重をかけた
状態で常温まで冷却することを特徴とするものである。(Means for Solving the Problems) In order to solve the above problems, the method for manufacturing a sputtering target of the present invention includes bonding a target with a small coefficient of linear expansion and a backing plate of Cu or SO3 using In as a bonding material. This is characterized in that it is heated to a temperature just below the melting point of In, set on a straightening jig, and cooled to room temperature while applying a reverse warping load.
（作用）
上記の如く本発明のスパッタリングターゲットの製造方
法は、Ｉｎを用いて線膨張係数の小さいターゲットとＣ
ｕ又はＳＵＳのバッキングプレートとを接着した後、こ
れをＩｎの融点直下の温度にして逆反り荷重をかけるこ
とにより、荷重による変位量を少なくでき、脆いターゲ
ットの矯正が可能となる。即ち、ターゲットとバッキン
グプレートのずれは、高温下の逆反り時に軟かくて追従
性の良いＩｎ層に吸収されるので、ターゲットの反りが
矯正される。(Function) As described above, the method for manufacturing a sputtering target of the present invention uses a target with a small coefficient of linear expansion and a carbon
After adhering the U or SUS backing plate to the backing plate, the temperature is brought to just below the melting point of In and a reverse warp load is applied to the backing plate, thereby reducing the amount of displacement due to the load and making it possible to straighten a brittle target. That is, the misalignment between the target and the backing plate is absorbed by the In layer, which is soft and has good followability during reverse warping under high temperature, so that the warpage of the target is corrected.
（実施例）
本発明のスパッタリングターゲットの製造方法の一実施
例を図によって説明する。第１図に示す如く幅１２７
ｍｍ、長さ３８１ｍｍ、厚さ６．３５ｍｍの５１０２の
ターゲットｌと、幅１４７ｍｍ、長さ４０１１ＩＩ［１
１、厚さ１２ｍｍのＣｕのバッキングプレート２とを、
Ｉｎをボンディング材３として接着し、次に常温まで冷
却した後第２図に示す如く定盤４上で反りを測定した処
２〜３１Ｉ１ｍ発生した。次いで第３図に示す如＜１４
０℃に保持された恒温器５内に入れ３０分間保持して加
熱し、接着されたターゲット１とバッキングプレート２
の反りが平坦に戻ったことをｍ認した後恒温器５内より
取り出した。次に第４図に示す如く矯正治具６上にセッ
トして前記反りと等しい２〜３ ｍｍの逆反り荷重をか
けた。即ち矯正治具６は図示の如く架台６ａ上の左右両
側に支持突条６ｂを設け、中央にシャコ万力６Ｃを備え
たもので、Ｉｎのボンディング材３にて接着されたター
ゲット１とバッキングプレート２は左右両側の支持突条
６ｂ上に載せ、中央部をシャコ万力６Ｃにて締付けて２
〜３鮒の逆反り荷重をかけた。然る後接着されたターゲ
ット１とバッキングプレート２を矯正治具６上にて荷重
をかけた状態で常温まで冷却し、矯正治具６より取り外
す。この逆反り工程中にボンディング材３のＩｎ層にタ
ーゲットｌとバッキングプレート２のずれが吸収されて
第５図に示す如く矯正されたスパッタリングターゲット
７が得られた。(Example) An example of the method for manufacturing a sputtering target of the present invention will be described with reference to the drawings. Width 127 as shown in Figure 1
mm, length 381 mm, thickness 6.35 mm 5102 target l and width 147 mm, length 4011 II [1
1. Cu backing plate 2 with a thickness of 12 mm,
In was bonded as the bonding material 3, and after cooling to room temperature, warpage was measured on a surface plate 4 as shown in FIG. Next, as shown in FIG.
The target 1 and the backing plate 2 are placed in a constant temperature chamber 5 maintained at 0° C. and heated for 30 minutes.
After confirming that the warpage had returned to a flat state, it was taken out from the thermostatic chamber 5. Next, as shown in FIG. 4, it was set on a straightening jig 6 and a reverse warp load of 2 to 3 mm, which was equal to the warp described above, was applied. That is, as shown in the figure, the correction jig 6 has support ridges 6b on both left and right sides of a pedestal 6a, and is equipped with a shako vise 6C in the center. 2 is placed on the support protrusions 6b on both the left and right sides, and the center part is tightened with a shako vise 6C.
A reverse warping load of ~3 carp was applied. Thereafter, the bonded target 1 and backing plate 2 are cooled to room temperature on a straightening jig 6 under a load, and then removed from the straightening jig 6. During this reverse warping process, the misalignment between the target 1 and the backing plate 2 was absorbed by the In layer of the bonding material 3, and a corrected sputtering target 7 as shown in FIG. 5 was obtained.
尚、上記実施例はターゲラ）１が５ｉＯ７の場合である
が、ガラス等の他の線膨張係数の小さい材料の場合でも
同様に反りは矯正されるものである。また上記実施例は
バッキングプレート２がＣｕの場合であるが、ＳＵＳの
場合でも同様に反りは矯正されるものである。Note that although the above embodiment deals with the case in which Targera) 1 is 5iO7, warping can be similarly corrected in the case of other materials having a small coefficient of linear expansion, such as glass. Further, although the above embodiment is a case in which the backing plate 2 is made of Cu, warping can be similarly corrected even in the case of SUS.
（発明の効果）
以上の説明で判るように本発明のスパッタリングターゲ
ットの製造方法によれば、線膨張係数の小さいターゲッ
トを、ＣｕやＳＵＳのバッキングプレートに接着した時
に発生する反りが確実に矯正されたスパッタリングター
ゲットを得ることができ、これをスパッター装置にセッ
トした際、ターゲットが割れることが無いものである。(Effects of the Invention) As can be seen from the above explanation, according to the method for manufacturing a sputtering target of the present invention, warping that occurs when a target with a small coefficient of linear expansion is bonded to a backing plate made of Cu or SUS can be reliably corrected. It is possible to obtain a sputtering target that is resistant to cracking, and when it is set in a sputtering device, the target will not break.
第１図乃至第５図は本発明のスパッタリングターゲット
の製造方法の工程を示す図である。
出願人 田中貴金属工業株式会社
吊
図
第
図
竹
り・τ
図
弔
図
第
図1 to 5 are diagrams showing the steps of the method for manufacturing a sputtering target of the present invention. Applicant: Tanaka Kikinzoku Kogyo Co., Ltd. Suspension diagram number diagram Bamboo τ Funeral diagram number diagram
Claims (1)
バッキングプレートとを、Ｉｎをボンディング材として
接着した後、これをＩｎの融点直下の温度にして矯正治
具上にセットし、逆反り荷重をかけた状態で常温まで冷
却することを特徴とするスパッタリングターゲットの製
造方法。1. After bonding a target with a small linear expansion coefficient and a Cu or SUS backing plate using In as a bonding material, set it on a straightening jig at a temperature just below the melting point of In, and apply a reverse warp load. A method for producing a sputtering target characterized by cooling the sputtering target to room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27238488A JPH02122071A (en) | 1988-10-28 | 1988-10-28 | Manufacture of sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27238488A JPH02122071A (en) | 1988-10-28 | 1988-10-28 | Manufacture of sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02122071A true JPH02122071A (en) | 1990-05-09 |
Family
ID=17513132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27238488A Pending JPH02122071A (en) | 1988-10-28 | 1988-10-28 | Manufacture of sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02122071A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0761372A1 (en) * | 1995-08-07 | 1997-03-12 | Applied Materials, Inc. | Preparation and bonding of workpieces to form sputtering targets and other assemblies |
| JP2001131738A (en) * | 1999-11-09 | 2001-05-15 | Nikko Materials Co Ltd | Method and device for straightening sputtering target/ backing plate assembly |
| JP2001140064A (en) * | 1999-11-12 | 2001-05-22 | Kojundo Chem Lab Co Ltd | Target joined body for sputtering and producing method therefor |
| US6921470B2 (en) * | 2003-02-13 | 2005-07-26 | Cabot Corporation | Method of forming metal blanks for sputtering targets |
| WO2012140798A1 (en) * | 2011-04-12 | 2012-10-18 | 株式会社アルバック | Target and target production method |
| JP2014169473A (en) * | 2013-03-01 | 2014-09-18 | Tanaka Kikinzoku Kogyo Kk | Warpage straightening method of sputtering target with backing plate |
| WO2015037546A1 (en) * | 2013-09-12 | 2015-03-19 | 田中貴金属工業株式会社 | Warp correction method for sputtering target with backing plate |
| CN111468563A (en) * | 2020-04-15 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Correction method of titanium-tungsten square target assembly |
| WO2021100233A1 (en) * | 2019-11-21 | 2021-05-27 | 三井金属鉱業株式会社 | Sputtering target and method for manufacturing same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0211759A (en) * | 1988-06-30 | 1990-01-16 | Hitachi Metals Ltd | Method of joying backing plate for target material |
| JPH0234776A (en) * | 1988-07-22 | 1990-02-05 | Hitachi Metals Ltd | Method for joining target material to cooling member |
-
1988
- 1988-10-28 JP JP27238488A patent/JPH02122071A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0211759A (en) * | 1988-06-30 | 1990-01-16 | Hitachi Metals Ltd | Method of joying backing plate for target material |
| JPH0234776A (en) * | 1988-07-22 | 1990-02-05 | Hitachi Metals Ltd | Method for joining target material to cooling member |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0761372A1 (en) * | 1995-08-07 | 1997-03-12 | Applied Materials, Inc. | Preparation and bonding of workpieces to form sputtering targets and other assemblies |
| JP2001131738A (en) * | 1999-11-09 | 2001-05-15 | Nikko Materials Co Ltd | Method and device for straightening sputtering target/ backing plate assembly |
| WO2001034868A1 (en) * | 1999-11-09 | 2001-05-17 | Nikko Materials Company, Limited | Correction method and device for sputtering target/packing plate assembly |
| JP2001140064A (en) * | 1999-11-12 | 2001-05-22 | Kojundo Chem Lab Co Ltd | Target joined body for sputtering and producing method therefor |
| US6921470B2 (en) * | 2003-02-13 | 2005-07-26 | Cabot Corporation | Method of forming metal blanks for sputtering targets |
| CN100412224C (en) * | 2003-02-13 | 2008-08-20 | 卡伯特公司 | Method of forming metal blanks for sputtering targets |
| TWI481736B (en) * | 2011-04-12 | 2015-04-21 | Ulvac Inc | Target and target manufacturing method |
| CN103282542A (en) * | 2011-04-12 | 2013-09-04 | 株式会社爱发科 | Target and target production method |
| CN107419227A (en) * | 2011-04-12 | 2017-12-01 | 株式会社爱发科 | Film formation device |
| WO2012140798A1 (en) * | 2011-04-12 | 2012-10-18 | 株式会社アルバック | Target and target production method |
| JP5721815B2 (en) * | 2011-04-12 | 2015-05-20 | 株式会社アルバック | Target and target manufacturing method |
| JP2014169473A (en) * | 2013-03-01 | 2014-09-18 | Tanaka Kikinzoku Kogyo Kk | Warpage straightening method of sputtering target with backing plate |
| JPWO2015037546A1 (en) * | 2013-09-12 | 2017-03-02 | 田中貴金属工業株式会社 | Warping correction method for sputtering target with backing plate |
| US20160211124A1 (en) * | 2013-09-12 | 2016-07-21 | Tanaka Kikinzoku Kogyo K.K. | Warp correction method for sputtering target with backing plate |
| WO2015037546A1 (en) * | 2013-09-12 | 2015-03-19 | 田中貴金属工業株式会社 | Warp correction method for sputtering target with backing plate |
| WO2021100233A1 (en) * | 2019-11-21 | 2021-05-27 | 三井金属鉱業株式会社 | Sputtering target and method for manufacturing same |
| JPWO2021100233A1 (en) * | 2019-11-21 | 2021-11-25 | 三井金属鉱業株式会社 | Sputtering target and its manufacturing method |
| CN114651086A (en) * | 2019-11-21 | 2022-06-21 | 三井金属矿业株式会社 | Sputtering target and method for producing same |
| TWI815025B (en) * | 2019-11-21 | 2023-09-11 | 日商三井金屬鑛業股份有限公司 | Sputtering target and method for manufacturing the same |
| CN111468563A (en) * | 2020-04-15 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Correction method of titanium-tungsten square target assembly |
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