JPH02120856U - - Google Patents
Info
- Publication number
- JPH02120856U JPH02120856U JP2996789U JP2996789U JPH02120856U JP H02120856 U JPH02120856 U JP H02120856U JP 2996789 U JP2996789 U JP 2996789U JP 2996789 U JP2996789 U JP 2996789U JP H02120856 U JPH02120856 U JP H02120856U
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- reference signal
- semiconductor laser
- transistor
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims description 5
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000005856 abnormality Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
Description
第１図は本考案の一実施例における基準信号発
生回路の回路構成図、第２図は同回路の温度検出
回路の構成を示す回路図、第３図は従来の基準信
号発生回路の構成を示す回路ブロツク図である。
１１……第１のトランジスタ、１２……第２の
トランジスタ、１３……定電流源、１４……エミ
ツタ抵抗、１５……利得設定用の抵抗、１６……
温度検出回路、１７……基準信号の出力端子、６
１……サーミスタ、６２，６３……温度係数合わ
せ用の抵抗。
FIG. 1 is a circuit diagram showing the configuration of a reference signal generation circuit according to an embodiment of the present invention, FIG. 2 is a circuit diagram showing the configuration of a temperature detection circuit of the same circuit, and FIG. FIG. 11...First transistor, 12...Second transistor, 13...Constant current source, 14...Emitter resistor, 15...Resistance for gain setting, 16...
Temperature detection circuit, 17...Reference signal output terminal, 6
1...Thermistor, 62, 63...Resistance for temperature coefficient adjustment.
Claims (1)
してバイアス電流が基準信号レベルを越えたとき
に異常検出信号を出力する半導体レーザ駆動回路
において、カレントミラー回路を構成する一方の
トランジスタに定電流回路を接続するとともに、
他方のトランジスタに温度検出回路および基準信
号の利得設定用の抵抗回路を直列に接続し、かつ
前記温度検出回路を、抵抗値が前記半導体レーザ
の特性温度に応じて設定された抵抗回路を感温素
子に対し直列および並列にそれぞれ接続したもの
から構成したことを特徴とする基準信号発生回路
。 In a semiconductor laser drive circuit that compares the bias current of a semiconductor laser with a reference signal and outputs an abnormality detection signal when the bias current exceeds the reference signal level, a constant current circuit is connected to one transistor that makes up the current mirror circuit. At the same time,
A temperature detection circuit and a resistance circuit for setting the gain of the reference signal are connected in series to the other transistor, and the temperature detection circuit is connected to a resistance circuit whose resistance value is set according to the characteristic temperature of the semiconductor laser. 1. A reference signal generation circuit comprising elements connected in series and in parallel to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2996789U JPH0720932Y2 (en) | 1989-03-16 | 1989-03-16 | Reference signal generation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2996789U JPH0720932Y2 (en) | 1989-03-16 | 1989-03-16 | Reference signal generation circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02120856U true JPH02120856U (en) | 1990-09-28 |
| JPH0720932Y2 JPH0720932Y2 (en) | 1995-05-15 |
Family
ID=31254608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2996789U Expired - Lifetime JPH0720932Y2 (en) | 1989-03-16 | 1989-03-16 | Reference signal generation circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0720932Y2 (en) |
-
1989
- 1989-03-16 JP JP2996789U patent/JPH0720932Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0720932Y2 (en) | 1995-05-15 |
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