JPH02116735U - - Google Patents
Info
- Publication number
- JPH02116735U JPH02116735U JP1989025982U JP2598289U JPH02116735U JP H02116735 U JPH02116735 U JP H02116735U JP 1989025982 U JP1989025982 U JP 1989025982U JP 2598289 U JP2598289 U JP 2598289U JP H02116735 U JPH02116735 U JP H02116735U
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- high melting
- point metal
- wiring
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
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- H10W72/90—
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- H10D64/0135—
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- H10P14/416—
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- H10W70/60—
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- H10W72/07551—
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- H10W72/50—
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- H10W72/536—
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- H10W72/59—
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- H10W72/9226—
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- H10W72/923—
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- H10W72/983—
Landscapes
- Wire Bonding (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989025982U JPH02116735U (cg-RX-API-DMAC10.html) | 1989-03-07 | 1989-03-07 | |
| KR1019900002827A KR900015354A (ko) | 1989-03-07 | 1990-03-05 | Mos형 반도체장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989025982U JPH02116735U (cg-RX-API-DMAC10.html) | 1989-03-07 | 1989-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02116735U true JPH02116735U (cg-RX-API-DMAC10.html) | 1990-09-19 |
Family
ID=31247191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989025982U Pending JPH02116735U (cg-RX-API-DMAC10.html) | 1989-03-07 | 1989-03-07 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH02116735U (cg-RX-API-DMAC10.html) |
| KR (1) | KR900015354A (cg-RX-API-DMAC10.html) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487175A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
| JPS586151A (ja) * | 1981-07-02 | 1983-01-13 | Seiko Epson Corp | 半導体装置の製造方法 |
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1989
- 1989-03-07 JP JP1989025982U patent/JPH02116735U/ja active Pending
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1990
- 1990-03-05 KR KR1019900002827A patent/KR900015354A/ko not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487175A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
| JPS586151A (ja) * | 1981-07-02 | 1983-01-13 | Seiko Epson Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR900015354A (ko) | 1990-10-26 |