JPH0211121B2 - - Google Patents

Info

Publication number
JPH0211121B2
JPH0211121B2 JP57127403A JP12740382A JPH0211121B2 JP H0211121 B2 JPH0211121 B2 JP H0211121B2 JP 57127403 A JP57127403 A JP 57127403A JP 12740382 A JP12740382 A JP 12740382A JP H0211121 B2 JPH0211121 B2 JP H0211121B2
Authority
JP
Japan
Prior art keywords
layer
refractive index
film
zns
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57127403A
Other languages
Japanese (ja)
Other versions
JPS5917502A (en
Inventor
Tetsuo Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Optical Co Ltd
Original Assignee
Tokyo Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Optical Co Ltd filed Critical Tokyo Optical Co Ltd
Priority to JP57127403A priority Critical patent/JPS5917502A/en
Publication of JPS5917502A publication Critical patent/JPS5917502A/en
Publication of JPH0211121B2 publication Critical patent/JPH0211121B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/113Anti-reflection coatings using inorganic layer materials only
    • G02B1/115Multilayers

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、赤外線領域の光学部材として用いら
れるゲルマニユウム基板の赤外反射防止膜に関す
る。 従来の色消し反射防止膜の構成の例としては、
基板側から数えて第1層ないし第3層をn1、n2
n3、空気及び基板の屈折率をnp、nsとするとき、 n1n3=n22=npns を満たす屈折率の物質をλ/4の厚さで蒸着する
ものが知られている。しかし、赤外反射防止膜と
してこれを満たす第3層の物質はいずれも耐久性
が低いかあるいは赤外線吸収率が高いかどちらか
の欠点を有する。耐久性の低い材料については反
射防止膜最上層に用いることは好ましくなく、ま
た吸収率の大きい材料についてはできるだけ薄い
膜厚にする必要がある。 従来の赤外線反射防止膜の例としては、米国特
許第3468594号に記載された三層反射防止膜が知
られており、これは基板側から数えて第1層がSi
膜、第2層がZnS、第3層がBaF2の各膜からな
るものである。ところで、この第1層のSiは活性
があるため、蒸着の際の蒸発源に電子銃を使用す
る必要があり、一方一定の生産能率を上げるため
に蒸着速度をある程度高くする必要がある。しか
し、蒸着速度を上げるために電子銃の出力を大き
くするとSiが不均一に加熱され、気体でないSiが
飛散して基板に付着するため、蒸着膜の品質の低
下あるいは生産能率を向上させることができない
等の問題を有する。 さらに、上記第3務のBaF2は、水に対する耐
久性が低くしかも第1表に示すようにヌープ硬さ
も低いため、本従来技術は耐久性に乏しい問題も
有する。
The present invention relates to an infrared antireflection coating on a germanium substrate used as an optical member in the infrared region. An example of the structure of a conventional achromatic antireflection film is:
Counting from the substrate side, the first to third layers are n 1 , n 2 ,
When n 3 , the refractive indices of air and the substrate are n p and n s , it is known that a substance with a refractive index satisfying n 1 n 3 = n2 2 = n p n s is deposited to a thickness of λ/4. It is being However, all of the third layer materials that serve as the infrared antireflection film have the disadvantage of either low durability or high infrared absorption. It is not preferable to use a material with low durability as the top layer of an antireflection film, and a material with a high absorption rate needs to be as thin as possible. As an example of a conventional infrared antireflection coating, a three-layer antireflection coating described in U.S. Pat. No. 3,468,594 is known, in which the first layer counted from the substrate side is Si.
The second layer is made of ZnS and the third layer is made of BaF 2 . By the way, since this first layer of Si is active, it is necessary to use an electron gun as an evaporation source during vapor deposition, and on the other hand, it is necessary to increase the vapor deposition rate to some extent in order to increase a certain production efficiency. However, when increasing the output of the electron gun to increase the deposition rate, Si is heated unevenly and non-gaseous Si scatters and adheres to the substrate, resulting in a decrease in the quality of the deposited film or an increase in production efficiency. There are problems such as not being able to do it. Furthermore, since BaF 2 , which is the third material, has low durability against water and low Knoop hardness as shown in Table 1, this prior art also has the problem of poor durability.

【表】 本発明は、上記従来の問題を鑑みなされたもの
であつて、赤外反射防止の効果が優れており、高
速の蒸着が可能で、かつ容易に高品質の蒸着膜を
得ることができる赤外反射防止膜を提供すること
を目的とする。 本発明の他の目的は、赤外線の吸収が少なくま
た耐久性の高い赤外反射防止膜を提供することで
ある。 本発明は、上記目的を達成するために次の構成
上の特徴を有する。すなわち、ゲルマニユウム基
板の反射防止膜において、基板側から数えて第1
層に中間屈折率のZnS膜、第2層に高屈折率の
Ge、第3層に上記中間屈折率のZnS膜、第4層
に低屈折率のLaF3、BaF2あるいはMgF2、第5
層に上記中間屈折率のZnS膜を配したことであ
る。また、本発明の望ましい実施例としては、上
記第1層ないし第5層の各厚さをd1、d2、d3
d4、d5各屈折率をn1、n2、n3、n4、n5とすると
き、n1d1:n2d2:n3d3:n4d4:n5d5≒1:2:
4.2:2.5:0.7とすることである。 以下本発明の実施例を説明する。第1実施例
は、 基 板 Ge 第1層 ZnS 光学膜厚(nd) 0.4μm 第2層 Ge 光学膜厚 0.8μm 第3層 ZnS 光学膜厚 1.7μm 第4層 LaF3 光学膜厚 1.0μm 第5層 ZnS 光学膜厚 0.3μm である。この分光特性は、計算値が第1図に示さ
れ、実験値が第2図に示されるように、赤外域に
おける大気の窓8μmから12μmについて高透過率
を得ることができる。なお、第1図ないし第4図
は、縦軸が波長(単位:μm)、横軸が透過率
(単位:%)である。 第2実施例は、 基 板 Ge 第1層 ZnS 光学膜厚(nd) 0.4μm 第2層 Ge 光学膜厚 0.8μm 第3層 ZnS 光学膜厚 1.7μm 第4層 BaF2 光学膜厚 1.0μm 第5層 ZnS 光学膜厚 0.3μm である。この分光特性は、第3図に示されるよう
に、8μmから12μmについて高透過率を得ること
ができる。 第3実施例は、 基 板 Ge 第1層 ZnS 光学膜厚 0.4μm 第2層 Ge 光学膜厚 0.8μm 第3層 ZnS 光学膜厚 1.7μm 第4層 MgF2 光学膜厚 1.0μm 第5層 ZnS 光学膜厚 0.3μm である。この分光特性は、第4図に示されるよう
に、4μmから15μmについて高透過率を得ること
ができる。 上記実施例と上記従来例の最上層をBaF2とし
たものとの耐湿テストの結果は、以下の通りであ
り、本発明の耐久性の向上の一端を知ることがで
きる。なお、このテストは50℃、相対湿度95%の
中で行われた。
[Table] The present invention was developed in view of the above-mentioned conventional problems, and has an excellent effect of preventing infrared reflection, enables high-speed vapor deposition, and easily obtains a high-quality vapor-deposited film. The purpose is to provide an infrared antireflection film that can Another object of the present invention is to provide an infrared antireflection film that absorbs little infrared rays and is highly durable. The present invention has the following structural features to achieve the above object. In other words, in the antireflection film on the germanium substrate, the first layer counting from the substrate side
The layer is a ZnS film with an intermediate refractive index, and the second layer is a high refractive index film.
Ge, the third layer is a ZnS film with the above-mentioned intermediate refractive index, the fourth layer is a low refractive index LaF 3 , BaF 2 or MgF 2 , the fifth layer is
The reason is that the ZnS film with the above-mentioned intermediate refractive index is arranged as a layer. Further, in a preferred embodiment of the present invention, the thicknesses of the first to fifth layers are d 1 , d 2 , d 3 ,
When the refractive indices of d 4 and d 5 are n 1 , n 2 , n 3 , n 4 , and n 5 , n 1 d 1 : n 2 d 2 : n 3 d 3 : n 4 d 4 : n 5 d 5 ≒ 1:2:
The ratio should be 4.2:2.5:0.7. Examples of the present invention will be described below. The first example is as follows: Substrate Ge 1st layer ZnS optical thickness (nd) 0.4μm 2nd layer Ge optical thickness 0.8μm 3rd layer ZnS optical thickness 1.7μm 4th layer LaF 3 optical thickness 1.0μm 5-layer ZnS optical film thickness 0.3μm. With this spectral characteristic, as calculated values are shown in Figure 1 and experimental values are shown in Figure 2, high transmittance can be obtained in the atmospheric window of 8 μm to 12 μm in the infrared region. In FIGS. 1 to 4, the vertical axis represents wavelength (unit: μm), and the horizontal axis represents transmittance (unit: %). In the second example, substrate Ge 1st layer ZnS optical film thickness (nd) 0.4 μm 2nd layer Ge optical film thickness 0.8 μm 3rd layer ZnS optical film thickness 1.7 μm 4th layer BaF 2 optical film thickness 1.0 μm 5-layer ZnS optical film thickness 0.3μm. With this spectral characteristic, as shown in FIG. 3, high transmittance can be obtained from 8 μm to 12 μm. The third example is as follows: Substrate Ge 1st layer ZnS Optical thickness 0.4 μm 2nd layer Ge Optical thickness 0.8 μm 3rd layer ZnS Optical thickness 1.7 μm 4th layer MgF 2 Optical thickness 1.0 μm 5th layer ZnS The optical film thickness is 0.3 μm. With this spectral characteristic, as shown in FIG. 4, high transmittance can be obtained from 4 μm to 15 μm. The results of the moisture resistance test of the above example and the above conventional example in which the top layer was BaF 2 are as follows, and it can be seen that part of the improvement in durability of the present invention can be obtained. This test was conducted at 50°C and 95% relative humidity.

【表】【table】 【図面の簡単な説明】[Brief explanation of drawings]

第1図は第1実施例の計算による分光特性を示
すグラフ、第2図は第1実施例の実験値の分光特
性を示すグラフ、第3図は第2実施例の計算によ
る分光特性を示すグラフ、第4図は第3実施例の
計算による分光特性を示すグラフである。
Figure 1 is a graph showing the spectral characteristics calculated in the first example, Figure 2 is a graph showing the spectral characteristics of experimental values in the first example, and Figure 3 is a graph showing the spectral characteristics calculated in the second example. The graph shown in FIG. 4 is a graph showing the spectral characteristics calculated in the third embodiment.

Claims (1)

【特許請求の範囲】 1 ゲルマニユウム基板の反射防止膜において、
基板側から数えて第1層に中間屈折率のZnS膜、
第2層に高屈折率のGe、第3層に上記中間屈折
率のZnS膜、第4層に低屈折率のLaF3、BaF2
るいはMgF2、第5層に上記中間屈折率のZnS膜
を配したことを特徴とする基板ゲルマニウムの赤
外反射防止膜。 2 上記第1層ないし第5層の各厚さをd1、d2
d3、d4、d5各屈折率をn1、n2、n3、n4、n5とする
とき、 n1d1:n2d2:n3d3:n4d4:n5d5≒1:2:4.2:
2.5:0.7 である特許請求の範囲第1項記載の基板ゲルマニ
ユウムの赤外線反射防止膜。
[Claims] 1. In an antireflection film on a germanium substrate,
The first layer counting from the substrate side is a ZnS film with an intermediate refractive index.
The second layer is Ge with a high refractive index, the third layer is a ZnS film with the above intermediate refractive index, the fourth layer is LaF3, BaF 2 or MgF 2 with a low refractive index, and the fifth layer is a ZnS film with the above intermediate refractive index. An infrared antireflection coating made of germanium on a substrate. 2 The thickness of each of the first to fifth layers is d 1 , d 2 ,
When the refractive index of d 3 , d 4 , d 5 is n 1 , n 2 , n 3 , n 4 , n 5 , n 1 d 1 : n 2 d 2 : n 3 d 3 : n 4 d 4 : n5d5 1:2:4.2:
An anti-infrared reflection film on a germanium substrate according to claim 1, wherein the ratio is 2.5:0.7.
JP57127403A 1982-07-21 1982-07-21 Infrared anti-reflection film of germanium substrate Granted JPS5917502A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57127403A JPS5917502A (en) 1982-07-21 1982-07-21 Infrared anti-reflection film of germanium substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57127403A JPS5917502A (en) 1982-07-21 1982-07-21 Infrared anti-reflection film of germanium substrate

Publications (2)

Publication Number Publication Date
JPS5917502A JPS5917502A (en) 1984-01-28
JPH0211121B2 true JPH0211121B2 (en) 1990-03-13

Family

ID=14959122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57127403A Granted JPS5917502A (en) 1982-07-21 1982-07-21 Infrared anti-reflection film of germanium substrate

Country Status (1)

Country Link
JP (1) JPS5917502A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9575216B2 (en) 2011-05-24 2017-02-21 National Institute Of Advanced Industrial Science And Technology Infrared-transmitting film, method for producing infrared-transmitting film, infrared optical component, and infrared device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586527B2 (en) * 1987-11-26 1997-03-05 ミノルタ株式会社 Anti-reflective coating
JP2009086533A (en) * 2007-10-02 2009-04-23 Sumitomo Electric Hardmetal Corp Infrared multilayered film, infrared antireflection film, and infrared laser reflecting mirror
TR201000297A2 (en) * 2010-01-14 2011-08-22 Aselsan Elektroni̇k Sanayi̇ Ve Ti̇caret Anoni̇m Şi̇rketi̇ An infrared lens.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9575216B2 (en) 2011-05-24 2017-02-21 National Institute Of Advanced Industrial Science And Technology Infrared-transmitting film, method for producing infrared-transmitting film, infrared optical component, and infrared device

Also Published As

Publication number Publication date
JPS5917502A (en) 1984-01-28

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