JPH0211121B2 - - Google Patents
Info
- Publication number
- JPH0211121B2 JPH0211121B2 JP57127403A JP12740382A JPH0211121B2 JP H0211121 B2 JPH0211121 B2 JP H0211121B2 JP 57127403 A JP57127403 A JP 57127403A JP 12740382 A JP12740382 A JP 12740382A JP H0211121 B2 JPH0211121 B2 JP H0211121B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- refractive index
- film
- zns
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910002319 LaF3 Inorganic materials 0.000 claims 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical group F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims 1
- 239000010408 film Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 9
- 239000012788 optical film Substances 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910017768 LaF 3 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Optical Elements (AREA)
Description
本発明は、赤外線領域の光学部材として用いら
れるゲルマニユウム基板の赤外反射防止膜に関す
る。
従来の色消し反射防止膜の構成の例としては、
基板側から数えて第1層ないし第3層をn1、n2、
n3、空気及び基板の屈折率をnp、nsとするとき、
n1n3=n22=npns
を満たす屈折率の物質をλ/4の厚さで蒸着する
ものが知られている。しかし、赤外反射防止膜と
してこれを満たす第3層の物質はいずれも耐久性
が低いかあるいは赤外線吸収率が高いかどちらか
の欠点を有する。耐久性の低い材料については反
射防止膜最上層に用いることは好ましくなく、ま
た吸収率の大きい材料についてはできるだけ薄い
膜厚にする必要がある。
従来の赤外線反射防止膜の例としては、米国特
許第3468594号に記載された三層反射防止膜が知
られており、これは基板側から数えて第1層がSi
膜、第2層がZnS、第3層がBaF2の各膜からな
るものである。ところで、この第1層のSiは活性
があるため、蒸着の際の蒸発源に電子銃を使用す
る必要があり、一方一定の生産能率を上げるため
に蒸着速度をある程度高くする必要がある。しか
し、蒸着速度を上げるために電子銃の出力を大き
くするとSiが不均一に加熱され、気体でないSiが
飛散して基板に付着するため、蒸着膜の品質の低
下あるいは生産能率を向上させることができない
等の問題を有する。
さらに、上記第3務のBaF2は、水に対する耐
久性が低くしかも第1表に示すようにヌープ硬さ
も低いため、本従来技術は耐久性に乏しい問題も
有する。
The present invention relates to an infrared antireflection coating on a germanium substrate used as an optical member in the infrared region. An example of the structure of a conventional achromatic antireflection film is:
Counting from the substrate side, the first to third layers are n 1 , n 2 ,
When n 3 , the refractive indices of air and the substrate are n p and n s , it is known that a substance with a refractive index satisfying n 1 n 3 = n2 2 = n p n s is deposited to a thickness of λ/4. It is being However, all of the third layer materials that serve as the infrared antireflection film have the disadvantage of either low durability or high infrared absorption. It is not preferable to use a material with low durability as the top layer of an antireflection film, and a material with a high absorption rate needs to be as thin as possible. As an example of a conventional infrared antireflection coating, a three-layer antireflection coating described in U.S. Pat. No. 3,468,594 is known, in which the first layer counted from the substrate side is Si.
The second layer is made of ZnS and the third layer is made of BaF 2 . By the way, since this first layer of Si is active, it is necessary to use an electron gun as an evaporation source during vapor deposition, and on the other hand, it is necessary to increase the vapor deposition rate to some extent in order to increase a certain production efficiency. However, when increasing the output of the electron gun to increase the deposition rate, Si is heated unevenly and non-gaseous Si scatters and adheres to the substrate, resulting in a decrease in the quality of the deposited film or an increase in production efficiency. There are problems such as not being able to do it. Furthermore, since BaF 2 , which is the third material, has low durability against water and low Knoop hardness as shown in Table 1, this prior art also has the problem of poor durability.
【表】
本発明は、上記従来の問題を鑑みなされたもの
であつて、赤外反射防止の効果が優れており、高
速の蒸着が可能で、かつ容易に高品質の蒸着膜を
得ることができる赤外反射防止膜を提供すること
を目的とする。
本発明の他の目的は、赤外線の吸収が少なくま
た耐久性の高い赤外反射防止膜を提供することで
ある。
本発明は、上記目的を達成するために次の構成
上の特徴を有する。すなわち、ゲルマニユウム基
板の反射防止膜において、基板側から数えて第1
層に中間屈折率のZnS膜、第2層に高屈折率の
Ge、第3層に上記中間屈折率のZnS膜、第4層
に低屈折率のLaF3、BaF2あるいはMgF2、第5
層に上記中間屈折率のZnS膜を配したことであ
る。また、本発明の望ましい実施例としては、上
記第1層ないし第5層の各厚さをd1、d2、d3、
d4、d5各屈折率をn1、n2、n3、n4、n5とすると
き、n1d1:n2d2:n3d3:n4d4:n5d5≒1:2:
4.2:2.5:0.7とすることである。
以下本発明の実施例を説明する。第1実施例
は、
基 板 Ge
第1層 ZnS 光学膜厚(nd) 0.4μm
第2層 Ge 光学膜厚 0.8μm
第3層 ZnS 光学膜厚 1.7μm
第4層 LaF3 光学膜厚 1.0μm
第5層 ZnS 光学膜厚 0.3μm
である。この分光特性は、計算値が第1図に示さ
れ、実験値が第2図に示されるように、赤外域に
おける大気の窓8μmから12μmについて高透過率
を得ることができる。なお、第1図ないし第4図
は、縦軸が波長(単位:μm)、横軸が透過率
(単位:%)である。
第2実施例は、
基 板 Ge
第1層 ZnS 光学膜厚(nd) 0.4μm
第2層 Ge 光学膜厚 0.8μm
第3層 ZnS 光学膜厚 1.7μm
第4層 BaF2 光学膜厚 1.0μm
第5層 ZnS 光学膜厚 0.3μm
である。この分光特性は、第3図に示されるよう
に、8μmから12μmについて高透過率を得ること
ができる。
第3実施例は、
基 板 Ge
第1層 ZnS 光学膜厚 0.4μm
第2層 Ge 光学膜厚 0.8μm
第3層 ZnS 光学膜厚 1.7μm
第4層 MgF2 光学膜厚 1.0μm
第5層 ZnS 光学膜厚 0.3μm
である。この分光特性は、第4図に示されるよう
に、4μmから15μmについて高透過率を得ること
ができる。
上記実施例と上記従来例の最上層をBaF2とし
たものとの耐湿テストの結果は、以下の通りであ
り、本発明の耐久性の向上の一端を知ることがで
きる。なお、このテストは50℃、相対湿度95%の
中で行われた。[Table] The present invention was developed in view of the above-mentioned conventional problems, and has an excellent effect of preventing infrared reflection, enables high-speed vapor deposition, and easily obtains a high-quality vapor-deposited film. The purpose is to provide an infrared antireflection film that can Another object of the present invention is to provide an infrared antireflection film that absorbs little infrared rays and is highly durable. The present invention has the following structural features to achieve the above object. In other words, in the antireflection film on the germanium substrate, the first layer counting from the substrate side
The layer is a ZnS film with an intermediate refractive index, and the second layer is a high refractive index film.
Ge, the third layer is a ZnS film with the above-mentioned intermediate refractive index, the fourth layer is a low refractive index LaF 3 , BaF 2 or MgF 2 , the fifth layer is
The reason is that the ZnS film with the above-mentioned intermediate refractive index is arranged as a layer. Further, in a preferred embodiment of the present invention, the thicknesses of the first to fifth layers are d 1 , d 2 , d 3 ,
When the refractive indices of d 4 and d 5 are n 1 , n 2 , n 3 , n 4 , and n 5 , n 1 d 1 : n 2 d 2 : n 3 d 3 : n 4 d 4 : n 5 d 5 ≒ 1:2:
The ratio should be 4.2:2.5:0.7. Examples of the present invention will be described below. The first example is as follows: Substrate Ge 1st layer ZnS optical thickness (nd) 0.4μm 2nd layer Ge optical thickness 0.8μm 3rd layer ZnS optical thickness 1.7μm 4th layer LaF 3 optical thickness 1.0μm 5-layer ZnS optical film thickness 0.3μm. With this spectral characteristic, as calculated values are shown in Figure 1 and experimental values are shown in Figure 2, high transmittance can be obtained in the atmospheric window of 8 μm to 12 μm in the infrared region. In FIGS. 1 to 4, the vertical axis represents wavelength (unit: μm), and the horizontal axis represents transmittance (unit: %). In the second example, substrate Ge 1st layer ZnS optical film thickness (nd) 0.4 μm 2nd layer Ge optical film thickness 0.8 μm 3rd layer ZnS optical film thickness 1.7 μm 4th layer BaF 2 optical film thickness 1.0 μm 5-layer ZnS optical film thickness 0.3μm. With this spectral characteristic, as shown in FIG. 3, high transmittance can be obtained from 8 μm to 12 μm. The third example is as follows: Substrate Ge 1st layer ZnS Optical thickness 0.4 μm 2nd layer Ge Optical thickness 0.8 μm 3rd layer ZnS Optical thickness 1.7 μm 4th layer MgF 2 Optical thickness 1.0 μm 5th layer ZnS The optical film thickness is 0.3 μm. With this spectral characteristic, as shown in FIG. 4, high transmittance can be obtained from 4 μm to 15 μm. The results of the moisture resistance test of the above example and the above conventional example in which the top layer was BaF 2 are as follows, and it can be seen that part of the improvement in durability of the present invention can be obtained. This test was conducted at 50°C and 95% relative humidity.
第1図は第1実施例の計算による分光特性を示
すグラフ、第2図は第1実施例の実験値の分光特
性を示すグラフ、第3図は第2実施例の計算によ
る分光特性を示すグラフ、第4図は第3実施例の
計算による分光特性を示すグラフである。
Figure 1 is a graph showing the spectral characteristics calculated in the first example, Figure 2 is a graph showing the spectral characteristics of experimental values in the first example, and Figure 3 is a graph showing the spectral characteristics calculated in the second example. The graph shown in FIG. 4 is a graph showing the spectral characteristics calculated in the third embodiment.
Claims (1)
基板側から数えて第1層に中間屈折率のZnS膜、
第2層に高屈折率のGe、第3層に上記中間屈折
率のZnS膜、第4層に低屈折率のLaF3、BaF2あ
るいはMgF2、第5層に上記中間屈折率のZnS膜
を配したことを特徴とする基板ゲルマニウムの赤
外反射防止膜。 2 上記第1層ないし第5層の各厚さをd1、d2、
d3、d4、d5各屈折率をn1、n2、n3、n4、n5とする
とき、 n1d1:n2d2:n3d3:n4d4:n5d5≒1:2:4.2:
2.5:0.7 である特許請求の範囲第1項記載の基板ゲルマニ
ユウムの赤外線反射防止膜。[Claims] 1. In an antireflection film on a germanium substrate,
The first layer counting from the substrate side is a ZnS film with an intermediate refractive index.
The second layer is Ge with a high refractive index, the third layer is a ZnS film with the above intermediate refractive index, the fourth layer is LaF3, BaF 2 or MgF 2 with a low refractive index, and the fifth layer is a ZnS film with the above intermediate refractive index. An infrared antireflection coating made of germanium on a substrate. 2 The thickness of each of the first to fifth layers is d 1 , d 2 ,
When the refractive index of d 3 , d 4 , d 5 is n 1 , n 2 , n 3 , n 4 , n 5 , n 1 d 1 : n 2 d 2 : n 3 d 3 : n 4 d 4 : n5d5 ≒ 1:2:4.2:
An anti-infrared reflection film on a germanium substrate according to claim 1, wherein the ratio is 2.5:0.7.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57127403A JPS5917502A (en) | 1982-07-21 | 1982-07-21 | Infrared anti-reflection film of germanium substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57127403A JPS5917502A (en) | 1982-07-21 | 1982-07-21 | Infrared anti-reflection film of germanium substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5917502A JPS5917502A (en) | 1984-01-28 |
JPH0211121B2 true JPH0211121B2 (en) | 1990-03-13 |
Family
ID=14959122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57127403A Granted JPS5917502A (en) | 1982-07-21 | 1982-07-21 | Infrared anti-reflection film of germanium substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5917502A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9575216B2 (en) | 2011-05-24 | 2017-02-21 | National Institute Of Advanced Industrial Science And Technology | Infrared-transmitting film, method for producing infrared-transmitting film, infrared optical component, and infrared device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2586527B2 (en) * | 1987-11-26 | 1997-03-05 | ミノルタ株式会社 | Anti-reflective coating |
JP2009086533A (en) * | 2007-10-02 | 2009-04-23 | Sumitomo Electric Hardmetal Corp | Infrared multilayered film, infrared antireflection film, and infrared laser reflecting mirror |
TR201000297A2 (en) * | 2010-01-14 | 2011-08-22 | Aselsan Elektroni̇k Sanayi̇ Ve Ti̇caret Anoni̇m Şi̇rketi̇ | An infrared lens. |
-
1982
- 1982-07-21 JP JP57127403A patent/JPS5917502A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9575216B2 (en) | 2011-05-24 | 2017-02-21 | National Institute Of Advanced Industrial Science And Technology | Infrared-transmitting film, method for producing infrared-transmitting film, infrared optical component, and infrared device |
Also Published As
Publication number | Publication date |
---|---|
JPS5917502A (en) | 1984-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4784467A (en) | Multi-layered anti-reflection coating | |
US3682528A (en) | Infra-red interference filter | |
US5460888A (en) | Multi-layered optical film | |
US4367921A (en) | Low polarization beam splitter | |
US3601471A (en) | Durable first surface silver high reflector | |
US3829197A (en) | Antireflective multilayer coating on a highly refractive substrate | |
US4196246A (en) | Anti-reflection film for synthetic resin base | |
US4498728A (en) | Optical element | |
US4370027A (en) | Anti-reflection film with an ion-penetration prevention layer | |
US4497539A (en) | Antireflection optical coating | |
JPH04133004A (en) | Ultraviolet and infrared cut filter | |
US4483899A (en) | Infrared reflection-preventing film | |
JPH0211121B2 (en) | ||
JPS6135521B2 (en) | ||
JP2566634B2 (en) | Multi-layer antireflection film | |
US4355866A (en) | Stripe-color filter | |
JPH0528361B2 (en) | ||
JPH10133253A (en) | Light quantity stopping device | |
JPH0213761B2 (en) | ||
JP2624827B2 (en) | Half mirror | |
JPS6042445B2 (en) | Multilayer thin film optical system | |
JPH02262602A (en) | Optical element | |
JPH04181902A (en) | Antireflection film to optical parts made of synthetic resin | |
JPH0836101A (en) | Antireflection film of optical parts made of synthetic resin | |
JPH0483201A (en) | Antireflection film to optical parts made of synthetic resin |