JPH0211011B2 - - Google Patents
Info
- Publication number
- JPH0211011B2 JPH0211011B2 JP58240723A JP24072383A JPH0211011B2 JP H0211011 B2 JPH0211011 B2 JP H0211011B2 JP 58240723 A JP58240723 A JP 58240723A JP 24072383 A JP24072383 A JP 24072383A JP H0211011 B2 JPH0211011 B2 JP H0211011B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent conductive
- target
- silicon layer
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240723A JPS60132319A (ja) | 1983-12-20 | 1983-12-20 | 薄膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58240723A JPS60132319A (ja) | 1983-12-20 | 1983-12-20 | 薄膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60132319A JPS60132319A (ja) | 1985-07-15 |
| JPH0211011B2 true JPH0211011B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-03-12 |
Family
ID=17063741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58240723A Granted JPS60132319A (ja) | 1983-12-20 | 1983-12-20 | 薄膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60132319A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62216112A (ja) * | 1986-03-11 | 1987-09-22 | 田崎 明 | 透明導電膜の製造方法 |
| JP2936276B2 (ja) * | 1990-02-27 | 1999-08-23 | 日本真空技術株式会社 | 透明導電膜の製造方法およびその製造装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5440073A (en) * | 1977-09-05 | 1979-03-28 | Matsushita Electric Ind Co Ltd | Film forming method |
| JPS5616671A (en) * | 1979-07-17 | 1981-02-17 | Fujitsu Ltd | Sputtering apparatus |
| DE3069702D1 (en) * | 1980-08-08 | 1985-01-10 | Battelle Development Corp | Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus |
| EP0084971B2 (en) * | 1982-01-26 | 1990-07-18 | Materials Research Corporation | A method for reactive bias sputtering |
-
1983
- 1983-12-20 JP JP58240723A patent/JPS60132319A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60132319A (ja) | 1985-07-15 |