JPH0210864B2 - - Google Patents
Info
- Publication number
- JPH0210864B2 JPH0210864B2 JP20691386A JP20691386A JPH0210864B2 JP H0210864 B2 JPH0210864 B2 JP H0210864B2 JP 20691386 A JP20691386 A JP 20691386A JP 20691386 A JP20691386 A JP 20691386A JP H0210864 B2 JPH0210864 B2 JP H0210864B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- susceptor
- inert gas
- heated
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 46
- 239000011261 inert gas Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 12
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20691386A JPS6365083A (ja) | 1986-09-04 | 1986-09-04 | 気相成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20691386A JPS6365083A (ja) | 1986-09-04 | 1986-09-04 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6365083A JPS6365083A (ja) | 1988-03-23 |
JPH0210864B2 true JPH0210864B2 (zh) | 1990-03-09 |
Family
ID=16531153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20691386A Granted JPS6365083A (ja) | 1986-09-04 | 1986-09-04 | 気相成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6365083A (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2522402B2 (ja) * | 1989-08-24 | 1996-08-07 | 日本電気株式会社 | ウェハ―加熱装置 |
-
1986
- 1986-09-04 JP JP20691386A patent/JPS6365083A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6365083A (ja) | 1988-03-23 |
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