JPH0210864B2 - - Google Patents
Info
- Publication number
- JPH0210864B2 JPH0210864B2 JP20691386A JP20691386A JPH0210864B2 JP H0210864 B2 JPH0210864 B2 JP H0210864B2 JP 20691386 A JP20691386 A JP 20691386A JP 20691386 A JP20691386 A JP 20691386A JP H0210864 B2 JPH0210864 B2 JP H0210864B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- susceptor
- inert gas
- heated
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 46
- 239000011261 inert gas Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 12
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20691386A JPS6365083A (ja) | 1986-09-04 | 1986-09-04 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20691386A JPS6365083A (ja) | 1986-09-04 | 1986-09-04 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6365083A JPS6365083A (ja) | 1988-03-23 |
| JPH0210864B2 true JPH0210864B2 (zh) | 1990-03-09 |
Family
ID=16531153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20691386A Granted JPS6365083A (ja) | 1986-09-04 | 1986-09-04 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6365083A (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2522402B2 (ja) * | 1989-08-24 | 1996-08-07 | 日本電気株式会社 | ウェハ―加熱装置 |
-
1986
- 1986-09-04 JP JP20691386A patent/JPS6365083A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6365083A (ja) | 1988-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7166165B2 (en) | Barrier coating for vitreous materials | |
| JP3581388B2 (ja) | 均一性が向上した堆積ポリシリコン膜と、そのための装置 | |
| US20080092812A1 (en) | Methods and Apparatuses for Depositing Uniform Layers | |
| KR20190118077A (ko) | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 | |
| US6797068B1 (en) | Film forming unit | |
| KR20180130854A (ko) | 기판 지지 장치 및 이를 포함하는 기판 처리 장치 | |
| TW200845145A (en) | Microbatch deposition chamber with radiant heating | |
| EP1204783A1 (en) | A method of forming a silicon nitride layer on a semiconductor wafer | |
| JP2008028270A (ja) | 結晶成長方法及び結晶成長装置 | |
| KR101030422B1 (ko) | 서셉터 | |
| US7060944B2 (en) | Heat treatment device and heat treatment method | |
| JPH05152208A (ja) | 半導体製造装置 | |
| JP3297288B2 (ja) | 半導体装置の製造装置および製造方法 | |
| US20010052324A1 (en) | Device for producing and processing semiconductor substrates | |
| EP0728850A2 (en) | Quasi hot wall reaction chamber | |
| JP3665672B2 (ja) | 成膜装置及び成膜方法 | |
| JPH0210864B2 (zh) | ||
| JP2692326B2 (ja) | 触媒ｃｖｄ装置 | |
| JP2008270682A (ja) | 炭化珪素半導体結晶膜形成装置および炭化珪素半導体結晶膜形成方法 | |
| JPH0766139A (ja) | 化学気相成長装置 | |
| JPH11111707A (ja) | 気相成長装置 | |
| JP3969484B2 (ja) | ホットウオール加熱型化学気相成長装置 | |
| KR101943313B1 (ko) | 기판 처리 장치 및 시스템 | |
| JP2004014535A (ja) | 気相成長装置及び気相成長方法、並びに基体保持用サセプタ | |
| KR20000038764A (ko) | 반도체 웨이퍼의 박막증착용 가스주입장치 |