JPH02105405A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce a crack and a breakage at a chip end and to shorten a distance from the chip end to an element part by chamfering the chip end. CONSTITUTION:A groove 12 is dug in a semiconductor substrate 11 by using a diamond grindstone; in succession, the groove is dug so as to reach its rear; a semiconductor chip 13 having a chamfered part 2 is obtained. By this chamfering operation, it is not required to keep a definite distance from a peripheral part when an element is arranged in anticipation of a breakage of a chip end; the chip can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to the shape of a semiconductor chip.

[Conventional technology]

A conventional semiconductor chip used in a semiconductor device is shown in Figure 5 (
As shown in a), (b), and (c), it is generally a rectangular parallelepiped. This is because semiconductor chips are formed by a process in which a large number of semiconductor chips are formed on one semiconductor substrate and then cut using a diamond rotating grindstone.

[Problem to be solved by the invention]

However, the above-mentioned semiconductor chip is prone to cracks and chips around the chip. This is because semiconductors themselves are hard but brittle, so if they are processed at right angles, cracks or chips will inevitably occur at the corners. These cracks and chips first occur during the manufacturing process. This tends to occur during the cutting process with a diamond grindstone. The second problem occurs during use of the completed semiconductor device. This is because heat and mechanical stress are applied during use, and stress from the surrounding resin is applied to the periphery of the chip.

When a crack or chip occurs in a semiconductor chip, the semiconductor element formed in that part becomes defective, and the semiconductor device malfunctions. To prevent this, a certain distance (approximately 4
0 to 50 μm), no elements are arranged. An object of the present invention is to provide a semiconductor device that eliminates the above-mentioned conventional drawbacks.

[Means to solve the problem]

The semiconductor device according to the present invention is characterized in that the end of the main surface of the chip formed by the main surface of the chip and the side surface of the chip in the peripheral area of the semiconductor chip is chamfered.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1(a) is a plan view of a semiconductor chip showing one embodiment of the present invention, FIG. 1(b) is a sectional view taken along line AA' in FIG. 1(a),
FIG. 1(c) is an enlarged view of the chip end portion of FIG. 1(b). As is clear from FIG. 1(c), a chamfered portion 2 is provided at the end of the semiconductor chip 1 in this embodiment. As is clear from FIG. 5(c), conventional semiconductor chips have chip edges that are not chamfered and remain at right angles.

The manufacturing method of this example is shown in FIG. 2(b) using a diamond grindstone on the semiconductor substrate 11 of FIG. 2(a).
The semiconductor chip 13 can be obtained by digging the hole 12 as shown in FIG.

In addition, even in -degree grinding, the cross-sectional shape of the diamond rotary grindstone 14 can be devised as shown in FIG. 3(b).
A chamfered semiconductor chip 13 as shown in FIG. 3(c) is immediately obtained from the semiconductor substrate 11 of a).

FIG. 4 shows another method of manufacturing the semiconductor chip of the present invention.

In this method, chamfering is performed before grinding. That is, the groove 22 is previously formed in the chip terminal chamber portion of the semiconductor substrate 21 shown in FIG. 4(a). The grooves may be formed by chemically etching the semiconductor or physically by plasma etching or the like. A photolithography method is used to selectively etch the chip terminal chamber portion. Thereafter, as in the conventional method, the semiconductor chip 23 is obtained by cutting as shown in FIG. 4(c). This method has the advantage that no stress remains on the chamfered portion and that the chamfered portion can also be processed accurately.

〔Effect of the invention〕

As explained above, by chamfering the chip end, the present invention reduces cracking and chipping of the chip end, reduces the distance between the chip end and the element part, reduces the size of the chip, and reduces costs. become. It also improves reliability after assembly.

[Brief explanation of the drawing]

FIG. 1(a) is a plan view of an embodiment of the present invention, and FIG. 1(b) is a plan view of an embodiment of the present invention.
) is a cross-sectional view taken along line A-A' in Figure 1 (a), Figure 1 (c) is a partially enlarged view of the cross-sectional view in Figure 1 (b), and Figures 2 (a) and (b) are
), (c), Figure 3 (a>, (b), (c) and Figure 4
Figure (a). (b) and (c) are cross-sectional views showing the method of manufacturing a semiconductor chip of the present invention, FIG. 5(a) is a plan view of a conventional semiconductor chip, and FIG. BB' sectional view, 5th
FIG. 5(C) is a partially enlarged view of FIG. 5(b). 1.13, 23.33... Semiconductor chip, 2... Chamfered portion, 11.21... Semiconductor substrate, 12.22...
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Claims (1)

[Claims] 1. A semiconductor device characterized in that a chip main surface edge formed by a chip main surface and a chip side surface in a peripheral area of the semiconductor chip is chamfered.