JPH0210406B2 - - Google Patents
Info
- Publication number
- JPH0210406B2 JPH0210406B2 JP14197685A JP14197685A JPH0210406B2 JP H0210406 B2 JPH0210406 B2 JP H0210406B2 JP 14197685 A JP14197685 A JP 14197685A JP 14197685 A JP14197685 A JP 14197685A JP H0210406 B2 JPH0210406 B2 JP H0210406B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- light
- shielding film
- sio
- transmitting substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Glass Compositions (AREA)
Description
〔産業上の利用分野〕
本発明は、半導体集積回路及び高密度集積回路
等の製造工程において使用されるフオトマスクブ
ランクとフオトマスクに関し、特に遮光性膜のパ
ターンが欠落することを防止すべく改良したフオ
トマスクブランクとフオトマスクの透光性基板に
関するものである。
〔従来の技術〕
このフオトマスクブランクとフオトマスクは、
先ず、フオトマスクブランクが透光性基板上に遮
光性膜を積層して基本的に構成され、このフオト
マスクブランクを素材にして、湿式又は乾式のエ
ツチング工程等を経て、遮光性膜を選択的にパタ
ーン化することにより、フオトマスクが得られ
る。そして、半導体集積回路の製造工程では、こ
のフオトマスクを通してフオトレジストの塗布さ
れた半導体基板（例えば、Si半導体基板上に
SiO2膜とフオトレジストが付着されている。）に
露光して、半導体集積回路のパターン転写に使用
される。
このような半導体集積回路のパターンは、近年
微細化傾向が著しく、その線幅が2μm又はそれ以
下といつた超微細寸法のものまで要求されてい
る。この要求に応えるため、フオトマスクブラン
クとフオトマスクの透光性基板としては、(1)紫外
光ないし遠紫外光に対して透光率が高い、(2)熱膨
張係数が小さい、等の特徴を有する合成石英ガラ
スが使用されている。この合成石英ガラスは、高
純度の珪素化合物（SiCl4四塩化珪素、SiHCl3ト
リクロルシラン、SiH4モノシラン等）を原料と
して製造され、SiO2成分が99.99％以上（OH基を
除く。）であるものが一般に使用されている。
この合成石英ガラスの製造方法については、例
えば、珪素化合物の蒸気を火炎中に吹き込み、気
相状態で加水分解反応させて、生成したSiO2の
微粒子をSiO2の溶融温度（1700℃）以上の雰囲
気中で耐火基板上に積らせてガラス成長してい
る。
そして、このフオトマスクは、ハードマスクと
して通常数十回又はそれ以上、被転写物に転写し
て使用される。その際、フオトマスクは転写前
に、ホコリ等の汚染物を除去するために、超音波
洗浄等の洗浄工程を必要とする。
〔発明が解決しようとする問題点〕
しかしながら、透光性基板として従来の合成石
英ガラスを使用したフオトマスクは、前述した洗
浄工程、特に超音波洗浄工程を経ると、超音波照
射によるキヤビテイーシヨン作用により、クロム
などの遮光性膜パターンの周縁部分が１平方イン
チ当り数個〜数十個も欠落する問題点があつた。
この遮光性膜パターンの欠落は当然にして、被転
写物、例えば半導体集積回路等のパターンにその
まゝ転写されて欠損を発生させることから、フオ
トマスクとして致命的欠陥となる。
本発明の目的は、上記したフオトマスク洗浄時
に起きるパターン欠落を防止したフオトマスクと
その素材となるフオトマスクブランクを提供する
ことである。
〔問題点を解決するための手段〕
本発明のフオトマスクブランクとフオトマスク
に使用される透光性基板は、Al2O3及びB2O3のう
ち何れか少なくとも一成分を0.5〜８重量％を含
有し、残部が実質的にSiO2からなる合成シリカ
系ガラス基板であることを特徴としている。
〔作用〕
本発明によれば、合成シリカ系ガラス基板と遮
光性膜パターンとの間の付着力を増大させること
ができる。
以下、本発明の実施例を詳述する。
〔実施例〕
実施例の基板として、次の表に示す合成シリカ
系ガラス成分のガラス体を使用する。
[Industrial Application Field] The present invention relates to photomask blanks and photomasks used in the manufacturing process of semiconductor integrated circuits and high-density integrated circuits, etc., and is particularly concerned with photomask blanks and photomasks that have been improved to prevent the pattern of the light-shielding film from being missing. This invention relates to a photomask blank and a light-transmitting substrate for a photomask. [Prior art] This photomask blank and photomask are
First, a photomask blank is basically constructed by laminating a light-shielding film on a light-transmitting substrate, and using this photomask blank as a raw material, the light-shielding film is selectively layered through a wet or dry etching process. A photomask is obtained by patterning the photomask. In the manufacturing process of semiconductor integrated circuits, a semiconductor substrate coated with photoresist (for example, a Si semiconductor substrate) is exposed through this photomask.
SiO 2 film and photoresist are deposited. ) and used for pattern transfer of semiconductor integrated circuits. In recent years, there has been a remarkable trend toward miniaturization of patterns for semiconductor integrated circuits, and ultra-fine patterns with line widths of 2 μm or less are required. In order to meet this demand, photomask blanks and photomask transparent substrates have characteristics such as (1) high transmittance for ultraviolet light or deep ultraviolet light, and (2) small coefficient of thermal expansion. Synthetic quartz glass is used. This synthetic quartz glass is manufactured using high-purity silicon compounds (SiCl 4 silicon tetrachloride, SiHCl 3 trichlorosilane, SiH 4 monosilane, etc.) as raw materials, and the SiO 2 component is 99.99% or more (excluding OH groups). things are commonly used. Regarding the manufacturing method of this synthetic quartz glass, for example, the vapor of a silicon compound is blown into a flame, a hydrolysis reaction is caused in the gas phase, and the generated SiO 2 fine particles are heated to a temperature higher than the melting temperature of SiO 2 (1700°C). Glass is grown on a refractory substrate in an atmosphere. This photomask is usually used as a hard mask by being transferred onto an object several dozen times or more. In this case, the photomask requires a cleaning process such as ultrasonic cleaning to remove contaminants such as dust before transfer. [Problems to be Solved by the Invention] However, photomasks using conventional synthetic quartz glass as a light-transmitting substrate suffer from cavitation due to ultrasonic irradiation when subjected to the above-mentioned cleaning process, especially the ultrasonic cleaning process. As a result, there was a problem in that several to several dozen pieces per square inch of the peripheral edge of the pattern of a light-shielding film made of chromium or the like were missing.
This loss of the light-shielding film pattern is naturally transferred to the pattern of the object to be transferred, such as a semiconductor integrated circuit, and causes defects, which is a fatal defect in the photomask. An object of the present invention is to provide a photomask that prevents the pattern loss that occurs during photomask cleaning as described above, and a photomask blank that is a material for the photomask. [Means for Solving the Problems] The light-transmitting substrate used in the photomask blank and photomask of the present invention contains at least one component of Al 2 O 3 and B 2 O 3 in an amount of 0.5 to 8% by weight. The substrate is characterized by being a synthetic silica-based glass substrate containing , and the remainder substantially consisting of SiO 2 . [Function] According to the present invention, the adhesive force between the synthetic silica-based glass substrate and the light-shielding film pattern can be increased. Examples of the present invention will be described in detail below. [Example] As the substrate of the example, a glass body having a synthetic silica-based glass component shown in the following table is used.
以上の通り、本発明によれば、超音波洗浄によ
るパターン欠落密度を防止することができ、パタ
ーン線幅の微細化の要求とハードマスクとしての
仕様に充分応えることができる。
As described above, according to the present invention, pattern loss density due to ultrasonic cleaning can be prevented, and the demand for finer pattern line width and specifications as a hard mask can be fully met.
第１図は本発明の実施例によるフオトマスクブ
ランクとフオトマスクを示す断面図、第２図、第
３図、第４図、第５図、第６図及び第７図は本発
明の実施例によるフオトマスクのパターン欠落密
度を示す分布図、並びに第８図は従来のフオトマ
スクのパターン欠落密度を示す分布図である。
１……透光性基板、２……遮光性膜、３……フ
オトマスクブランク、８……クロムパターン、９
……フオトマスク。
FIG. 1 is a sectional view showing a photomask blank and a photomask according to an embodiment of the present invention, and FIGS. 2, 3, 4, 5, 6, and 7 are according to embodiments of the present invention. FIG. 8 is a distribution diagram showing the density of missing patterns in a photomask, and FIG. 8 is a distribution chart showing the density of missing patterns in a conventional photomask. 1... Transparent substrate, 2... Light-shielding film, 3... Photomask blank, 8... Chrome pattern, 9
...Photomask.
Claims (1)
トマスクブランク用透光性基板が、Al2O3及び
B2O3のうち何れか少なくとも一成分を0.5〜８重
量％含有し、残部が実質的にSiO2からなる合成
シリカ系ガラス基板であることを特徴とするフオ
トマスクブランク。 ２ 透光性基板上に遮光性膜を積層し、前記遮光
性膜を選択的にパターン化してなるフオトマスク
用透光性基板が、Al2O3及びB2O3のうち何れか少
なくとも一成分を0.5〜８重量％含有し、残部が
実質的にSiO2からなる合成シリカ系ガラス基板
であることを特徴とするフオトマスク。[Claims] 1. A light-transmitting substrate for a photomask blank, which is formed by laminating a light-shielding film on a light-transmitting substrate, is composed of Al 2 O 3 and
A photomask blank characterized in that it is a synthetic silica glass substrate containing at least one component of B 2 O 3 in an amount of 0.5 to 8% by weight, with the remainder being substantially SiO 2 . 2. A light-transmitting substrate for a photomask, which is formed by laminating a light-shielding film on a light-transmitting substrate and selectively patterning the light-shielding film, contains at least one component of Al 2 O 3 and B 2 O 3 . 1. A photomask comprising a synthetic silica-based glass substrate containing 0.5 to 8% by weight of SiO 2 and the remainder substantially consisting of SiO 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60141976A JPS622259A (en) | 1985-06-27 | 1985-06-27 | Photomask blank and photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60141976A JPS622259A (en) | 1985-06-27 | 1985-06-27 | Photomask blank and photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS622259A JPS622259A (en) | 1987-01-08 |
| JPH0210406B2 true JPH0210406B2 (en) | 1990-03-08 |
Family
ID=15304497
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60141976A Granted JPS622259A (en) | 1985-06-27 | 1985-06-27 | Photomask blank and photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS622259A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10354192B4 (en) * | 2003-11-20 | 2006-06-29 | Danfoss A/S | radiator valve |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042247A (en) * | 1983-08-16 | 1985-03-06 | Asahi Glass Co Ltd | Low expansion glass |
| JPS6071540A (en) * | 1983-09-26 | 1985-04-23 | Ohara Inc | Glass for photomask substrate |
-
1985
- 1985-06-27 JP JP60141976A patent/JPS622259A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042247A (en) * | 1983-08-16 | 1985-03-06 | Asahi Glass Co Ltd | Low expansion glass |
| JPS6071540A (en) * | 1983-09-26 | 1985-04-23 | Ohara Inc | Glass for photomask substrate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10354192B4 (en) * | 2003-11-20 | 2006-06-29 | Danfoss A/S | radiator valve |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622259A (en) | 1987-01-08 |
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