JPH02103054A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPH02103054A JPH02103054A JP63254917A JP25491788A JPH02103054A JP H02103054 A JPH02103054 A JP H02103054A JP 63254917 A JP63254917 A JP 63254917A JP 25491788 A JP25491788 A JP 25491788A JP H02103054 A JPH02103054 A JP H02103054A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- electron beam
- irradiated
- pattern
- development
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 8
- 238000010894 electron beam technology Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000011161 development Methods 0.000 abstract description 13
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 230000018109 developmental process Effects 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 3
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体集積回路の高精度なレジストパターンの
形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a highly accurate resist pattern for a semiconductor integrated circuit.
（従来の技術）
一般に集積回路の製作において高精度なレジストパター
ンを形成するには電子ビームによる露光が用いられるａ
電子ビーム露光に用いられるレジストは、電子ビームの
照射部分が溶剤に溶は易くなるポジ型と溶けにくくなる
ネガ型とにわけられる。ここではポジ型レジストを用い
る場合について説明し、ポジ型レジストをレジストと呼
ぶ。(Prior Art) In general, electron beam exposure is used to form highly accurate resist patterns in the production of integrated circuits.
Resists used in electron beam exposure are classified into positive types, in which the portions irradiated by the electron beam are easily dissolved in solvents, and negative types, in which the portions irradiated by the electron beam are difficult to dissolve. Here, a case will be described in which a positive resist is used, and the positive resist is referred to as a resist.
第４図は従来の電子ビーム露光を用いたレジストパター
ンの形成方法を示している。第４図において、１１は基
板、１２は電子ビーム、１３はレジストである。FIG. 4 shows a conventional method of forming a resist pattern using electron beam exposure. In FIG. 4, 11 is a substrate, 12 is an electron beam, and 13 is a resist.
次に上記従来例の形成方法についてのべる。第４図（、
）において、まず、基板上に塗布されたレジストの所要
部分に電子ビームを照射する（ｗ、光）と、厚さｔｌの
レジスト１３は、被照射部１３ａと未照射部１３ｂがで
きる１次に有機溶剤やアルカリ液等に浸？Ａ（現像）す
ると、第４図（ｂ）の如く、レジストが除去された部分
（溶解部）１３ｃと被照射部１３ａの残部である（被照
射部）１３ｄができる。現像時間は被照射部１３ｄを溶
解部１３ｃがこえないようにする。Next, the formation method of the above-mentioned conventional example will be described. Figure 4 (,
), first, when a required portion of the resist coated on the substrate is irradiated with an electron beam (w, light), the resist 13 with the thickness tl becomes a primary layer with an irradiated area 13a and an unirradiated area 13b. Soaked in organic solvent or alkaline solution? After A (development), a portion (dissolved portion) 13c from which the resist has been removed and a portion (irradiated portion) 13d remaining from the irradiated portion 13a are formed as shown in FIG. 4(b). The development time is set so that the melted part 13c does not exceed the irradiated part 13d.
次に溶解部が所望のパターン幅になるまで、寸法測定と
現像（追加現像）又は酸素プラズマ中での保持（以下、
デスカムと云う）を繰り返す。第４図（ｅ）はパターン
幅Ｗ′が所要の幅Ｗになっていない状態を示しており、
第４図（ｄ）はパターン幅Ｗが得られた状態を示してい
る。第４図（ｄ）におけるレジスト１３の厚みをｔ２と
すると、ｔユ＞ｔｚでありいわゆる膜べりが生ずる。Next, dimension measurement and development (additional development) or holding in oxygen plasma (hereinafter referred to as
(It's called a death cam) is repeated. FIG. 4(e) shows a state where the pattern width W' is not the required width W.
FIG. 4(d) shows a state in which the pattern width W has been obtained. If the thickness of the resist 13 in FIG. 4(d) is t2, then t>tz, and so-called film thinning occurs.
（発明が解決しようとする課題）
しかしながら、上記従来のパターン形成方法では、パタ
ーン幅Ｗの制御が追加現像やデスカムによって行われる
ので、パターン幅Ｗの分布が大きくなったり、レジスｈ
１３ｄ溶解不足のためパターンが部分的に形成されなか
ったり、レジストの膜べりが大きくなったり、プラズマ
処理・薬品処理に対する耐性が低下するという問題点が
あった。(Problem to be Solved by the Invention) However, in the conventional pattern forming method described above, the pattern width W is controlled by additional development and descum, so the distribution of the pattern width W becomes large and the registration h
Due to insufficient dissolution of 13d, there were problems such as partial formation of a pattern, increased resist film loss, and reduced resistance to plasma treatment and chemical treatment.
本発明はこのような従来の問題点を解決するものであり
、高精度なレジストパターンを得ることを目的とするも
のである。The present invention is intended to solve these conventional problems, and aims to obtain a highly accurate resist pattern.
（課題を解決するための手段）
本発明の上記目的を達成するために、追加現像を行う前
にレジスト全面に所定の電圧と所定の電流値にて電子ビ
ームを照射する工程を具備しているものである。(Means for Solving the Problems) In order to achieve the above object of the present invention, the present invention includes a step of irradiating the entire surface of the resist with an electron beam at a predetermined voltage and a predetermined current value before performing additional development. It is something.
（作 用）
したがって、本発明によれば上記のごとき工程を経過す
ることにより、溶解除去されていないレジストの表面に
現像液にて溶解可能な電子ビームの照射部が形成される
。この照射部の厚みは加速電圧によって高精度に決定さ
れる。照射部が形成されたレジストを現像液に浸漬する
と照射部のみが除去される。照射部の形成と現像液中へ
の浸漬を繰り返すことにより所望のパターン幅を精度良
く得ることができる。しかも未照射部に対する溶解速度
が遅い現像液いわゆる弱現像液を使用すれば、より一層
の精度向上ができる。(Function) Therefore, according to the present invention, by passing through the steps described above, an electron beam irradiation portion that can be dissolved by a developer is formed on the surface of the resist that has not been dissolved and removed. The thickness of this irradiated part is determined with high precision by the accelerating voltage. When the resist on which the irradiated areas are formed is immersed in a developer, only the irradiated areas are removed. A desired pattern width can be obtained with high precision by repeating the formation of the irradiated area and the immersion in the developer. Moreover, if a developer solution, a so-called weak developer solution, which has a slow dissolution rate in the unirradiated area is used, the precision can be further improved.
（実施例） 第１図は本発明の一実施例の工程を示したものである。(Example) FIG. 1 shows the steps of an embodiment of the present invention.
第１図において、■は基板、２は電子ビーム、３はレジ
スト、４は電子ビーム、５は電子ビームの被照射部であ
る。In FIG. 1, ■ is a substrate, 2 is an electron beam, 3 is a resist, 4 is an electron beam, and 5 is a portion to be irradiated with the electron beam.
次に一ヒ記実施例の工程について説明する。まず、第１
図（ａ）に示す如く基板に塗布されたレジストの所望部
分に電子ビームの照射を行う。この場合、電子ビームの
加速電圧は例えば２０ｋＶ、またレジストには例えばポ
リメチルメタアイソレート（ＰＭＭＡ）を用いる。被照
射部３ａはパターンとしては例えば幅２．２％のライン
であり、３ｂは未照射部である。次に有機溶剤例えばメ
チルイソブチルケトン（ＭｉＢＫ）に浸漬すると、第１
図（ｂ）に示すよにレジストの溶解部３０部分が除去さ
れる。この場合の現像時間は被照射部３ａを溶解部３Ｃ
がこえないようにする。次に第１図（Ｃ）に示すように
電子ビームをレジストの全表面又は所要箇所の表面に照
射する。この場合、電子ビームは例えば４．５ｋＶで露
光量は６０μｃ／ａｄである。また、電子ビーム４は細
いビームサイズである必要はなく全面−括照射でも良い
、電子ビームの被照射部５は電子ビーム４の照射により
形成された被照射部であり、厚さは０．２１Ｍ程度であ
る。次に弱現像液例えばメチルイソブチルケトン（Ｍｉ
ＢＫ）１容に対しイソプロピルアルコール（ｉＰＡ）３
容の混合液に浸漬すると、最大でも０．２−程度現像が
行われた後は殆んど停止する。このようにして非常に高
い精度でパターン幅２．２戸に近づけていく。第１図（
ｄ）における膜べり部５ａは、第１図（ｃ）における工
程で生じたレジスト３の１漠べり部を示しており、膜ベ
リ景は電子ビーム４の照射回数に依存する。Next, the steps of the embodiment described above will be explained. First, the first
As shown in Figure (a), a desired portion of the resist coated on the substrate is irradiated with an electron beam. In this case, the acceleration voltage of the electron beam is, for example, 20 kV, and polymethyl metaisolate (PMMA), for example, is used as the resist. The pattern of the irradiated area 3a is, for example, a line with a width of 2.2%, and 3b is an unirradiated area. Next, when immersed in an organic solvent such as methyl isobutyl ketone (MiBK), the first
As shown in Figure (b), the dissolved portion 30 of the resist is removed. In this case, the development time is as follows:
Make sure that it does not exceed. Next, as shown in FIG. 1(C), an electron beam is irradiated onto the entire surface of the resist or at a desired location. In this case, the electron beam is, for example, 4.5 kV and the exposure amount is 60 μc/ad. In addition, the electron beam 4 does not need to have a narrow beam size and may be irradiated all over the entire surface.The irradiated area 5 of the electron beam is the irradiated area formed by the irradiation of the electron beam 4, and has a thickness of 0.21M. That's about it. Next, a weak developer such as methyl isobutyl ketone (Mi
BK) 3 volumes of isopropyl alcohol (iPA)
When the film is immersed in a mixed solution of 100 ml, the development is approximately 0.2-degree at most and then almost stops. In this way, the pattern width approaches 2.2 houses with very high accuracy. Figure 1 (
The film edge portion 5a in d) indicates a vague portion of the resist 3 produced in the process shown in FIG.
第２図は本発明の一実施例における電子ビーム４の加速
電圧と形成された被照射部５の厚みとの関係を示したも
ので、加速電圧が高くなれば被照射部の厚みが増す。な
お、露光量が増加すれば。FIG. 2 shows the relationship between the accelerating voltage of the electron beam 4 and the thickness of the formed irradiated part 5 in one embodiment of the present invention, and as the accelerating voltage increases, the thickness of the irradiated part increases. Note that if the exposure amount increases.
現像液中の浸漬時間は短くなるが溶解部における厚さへ
の影響は少ない。Although the immersion time in the developer is shortened, there is little effect on the thickness of the dissolved area.
第３図は本発明の一実施例におけるパターン幅の寸法の
分布を示したもので、Ａは本発明の実施例における分布
、Ｂは従来例における分布であり、明らかに本発明の実
施例のパターン幅の設計値に対する分布が改善されてい
る。FIG. 3 shows the distribution of pattern width dimensions in an embodiment of the present invention, where A is the distribution in the embodiment of the present invention and B is the distribution in the conventional example. The pattern width distribution with respect to the design value has been improved.
（発明の効果）
本発明は上記実施例より明らかなように、高精度なパタ
ーン形成がおこなえる。なお、全面を照射する電子ビｉ
ムの加速電圧を上げれば、電子ビームがレジストに対し
垂直に侵入する度合が大きくなるので、現像が垂直方向
に進み易くなり、パターン形成部に部分的に残ったレジ
ストが除去されパターン形成不良の防止ができる。(Effects of the Invention) As is clear from the above embodiments, the present invention allows highly accurate pattern formation. In addition, the electronic video i that illuminates the entire surface
If the accelerating voltage of the system is increased, the degree of perpendicular penetration of the electron beam into the resist increases, making it easier for development to proceed in the vertical direction, removing resist partially remaining in the pattern forming area, and reducing pattern formation defects. It can be prevented.
なお、上記説明においてはポジ型Ｅ Ｂ （エレクトロ
ンビーム）レジストを用いた場合について述べたが、本
発明の主旨をかえることなくネガ型ＥＢレジストを用い
ることもできる。また、イオンビーム露光や光露光に適
用できることは言うまでもない。In the above description, a positive type EB (electron beam) resist is used, but a negative type EB resist can also be used without changing the spirit of the present invention. It goes without saying that the present invention can also be applied to ion beam exposure and light exposure.
第１図は本発明の一実施例における工程図、第２図は加
速電圧と被照射部の厚みとの関係を示す図、第３図はパ
ターン幅の分布を示す図、第４図は従来例における工程
図である。
１．１１・・・基板、 ２，１２・・・電子ビーム。
３．１３・・・ レジスト、 ４ ・・・パターン全面
照射用の電子ビーム、 ５ ・・・電子ビームの被照射
部。
特許出願人 松下電子工業株式会社
第
図
第
因
パターン幅（ｐｍ）Figure 1 is a process diagram of an embodiment of the present invention, Figure 2 is a diagram showing the relationship between the accelerating voltage and the thickness of the irradiated area, Figure 3 is a diagram showing the distribution of pattern width, and Figure 4 is a diagram of the conventional method. It is a process diagram in an example. 1.11...Substrate, 2,12...Electron beam. 3.13...resist, 4...electron beam for irradiating the entire pattern, 5...portion to be irradiated with the electron beam. Patent applicant Matsushita Electronics Co., Ltd. Figure 1 Pattern width (pm)
Claims (1)
、前記レジストの全面又は一部に電子ビームを照射する
工程と、前記レジストを現像液に浸漬する工程とからな
るパターン形成方法。A pattern forming method comprising the steps of exposing and developing a resist coated on one substrate, irradiating the entire surface or part of the resist with an electron beam, and immersing the resist in a developer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63254917A JPH02103054A (en) | 1988-10-12 | 1988-10-12 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63254917A JPH02103054A (en) | 1988-10-12 | 1988-10-12 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02103054A true JPH02103054A (en) | 1990-04-16 |
Family
ID=17271653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63254917A Pending JPH02103054A (en) | 1988-10-12 | 1988-10-12 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02103054A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012133163A (en) * | 2010-12-22 | 2012-07-12 | Tokyo Electron Ltd | Local exposure method |
| JP2017068281A (en) * | 2016-12-27 | 2017-04-06 | Hoya株式会社 | Method for manufacturing photomask, pattern transfer method, and method for manufacturing display device |
-
1988
- 1988-10-12 JP JP63254917A patent/JPH02103054A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012133163A (en) * | 2010-12-22 | 2012-07-12 | Tokyo Electron Ltd | Local exposure method |
| JP2017068281A (en) * | 2016-12-27 | 2017-04-06 | Hoya株式会社 | Method for manufacturing photomask, pattern transfer method, and method for manufacturing display device |
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