JPH0195553A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH0195553A JPH0195553A JP62254062A JP25406287A JPH0195553A JP H0195553 A JPH0195553 A JP H0195553A JP 62254062 A JP62254062 A JP 62254062A JP 25406287 A JP25406287 A JP 25406287A JP H0195553 A JPH0195553 A JP H0195553A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- transparent plate
- image sensor
- tilt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003384 imaging method Methods 0.000 claims description 37
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 abstract description 10
- 229920005989 resin Polymers 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 3
- 239000000919 ceramic Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 以下の順序に従って本発明を説明する。[Detailed description of the invention] The present invention will be described in the following order.
A、産業上の利用分野
B00発明概要
C0従来技術
り9発明か解決しようとする問題点
E1問題点を解決するための手段
F3作用
G、実施例[第1図乃至第3図]
H99発明効果
(A、産業上の利用分野)
本発明は固体撮像装置、特にアオリを小さくすることの
できる固体撮像装置に関する。A. Industrial field of application B00 Summary of the invention C0 Prior art 9 Problems to be solved by the invention E1 Means for solving the problem F3 Effects G. Examples [Figures 1 to 3] H99 Effects of the invention (A. Industrial Application Field) The present invention relates to a solid-state imaging device, and particularly to a solid-state imaging device that can reduce tilt.
(B、発明の概要)
本発明は、固体撮像装置において、アオリを小さくする
ため、
透′明板の裏面に配線膜を形成し、該配線膜と固体撮像
素子の電極とを透明板・固体撮像素子間に介在させた異
方性導電膜によフて電気的に接続するようにしたもので
ある。(B. Summary of the Invention) In order to reduce tilt in a solid-state imaging device, the present invention forms a wiring film on the back surface of a transparent plate, and connects the wiring film and the electrodes of the solid-state imaging device to the transparent plate and solid state. The image pickup elements are electrically connected by an anisotropic conductive film interposed between them.
(C,背景技術)
固体撮像装置はCCD、CID等の固体撮像素子を用い
て光学像を電気信号に変換するものであり、例えば特開
昭55−115777号公報により紹介されているよう
にレンズ等の部材に組み付けられてビデオカメラの主要
部品として用いられることが多い。(C. Background Art) A solid-state imaging device converts an optical image into an electrical signal using a solid-state imaging device such as a CCD or CID. It is often used as a main component of a video camera by being assembled with other members such as.
ところで、固体撮像装置は一般に、特開昭58−115
838号公報あるいは特開昭60−74565号公報等
に記載されているように断面形状が略凹−トのパッケー
ジの内底面に固体撮像素子をマウンティングし、パッケ
ージ表面の開口をガラス板等で閉塞した構造を有してい
る。By the way, solid-state imaging devices are generally disclosed in Japanese Patent Application Laid-open No. 115-1983.
As described in Publication No. 838 or Japanese Unexamined Patent Publication No. 60-74565, a solid-state image sensor is mounted on the inner bottom surface of a package with a substantially concave cross-sectional shape, and the opening on the surface of the package is closed with a glass plate or the like. It has a structure that
(D、発明が解決しようとする問題点)ところで、固体
撮像装置をレンズ等の部材に組み立ててビデオカメラ等
を製造する場合、固体撮像素子の表面に対してレンズの
光軸が垂直になるようにすることが必要である。(D. Problem to be solved by the invention) By the way, when manufacturing a video camera or the like by assembling a solid-state imaging device into a member such as a lens, the optical axis of the lens is perpendicular to the surface of the solid-state imaging device. It is necessary to do so.
即ち、固体撮像素子表面がレンズ等の光軸と垂直な向き
からずれていることをアオリといい、このアオリがある
と固体撮像素子表面の中央部においては結像の焦点が合
っていても中央部から離れたところにおいては焦点がず
れてしまうという現象が生じる。従って、7オリを小さ
くすることが必要とされるのである。特に、固体撮像素
子が高解像度化するに伴ってアすりをより小さくするこ
とが要求されるのである。In other words, the deviation of the surface of the solid-state image sensor from perpendicular to the optical axis of the lens is called tilt, and when there is tilt, even if the image is focused at the center of the surface of the solid-state image sensor, the center A phenomenon occurs in which the focus shifts away from the object. Therefore, it is necessary to reduce the size of the 7-ori. In particular, as the resolution of solid-state image sensors becomes higher, it is required to make the dots smaller.
しかしなから、固体撮像素子の表面に対、してレンズの
光軸が垂直になるよにすることは難しく、数十μmから
100μm程度のアオリが生じた。However, it is difficult to make the optical axis of the lens perpendicular to the surface of the solid-state image sensor, and a shift of about several tens of μm to 100 μm occurs.
二程度のアオリは従来においてはやむを得ないものとさ
れたが、固体撮像素子の高解像度化に伴い、アオリを十
μmあるいはそれ以下にすることが要求されるようにな
っている。In the past, a tilt of approximately 2.2 μm was considered unavoidable, but as the resolution of solid-state imaging devices becomes higher, it is now required to reduce the tilt to 10 μm or less.
ところで、アオリの生じる原因は、セラミックパッケー
ジの加工蹟度の向上に限界があり、また、固体撮像素子
をボンディングする膜の膜ツクに不均一性があり、各種
の誤差が累積され、その結果、固体撮像装置をレンズ鏡
筒に組み付ける際に位置合せ用基準面となるセラミック
パッケージ上面が固体撮像素子表面に対して完全な平行
にならないことにあフた。By the way, the cause of the tilt is that there is a limit to the improvement of the degree of machining of the ceramic package, and there is also non-uniformity in the film bonding the solid-state image sensor, and various errors accumulate.As a result, When assembling the solid-state imaging device into the lens barrel, the top surface of the ceramic package, which serves as a reference surface for positioning, was not completely parallel to the surface of the solid-state imaging device.
そこで、本発明は固体撮像素子表面に対して平行度の高
い位置合せ用基準面を簡単に得ることができる固体撮像
装置を提供することを目的とする。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a solid-state imaging device that can easily obtain an alignment reference plane that is highly parallel to the surface of a solid-state imaging device.
(E、問題点を解決するための手段)
本発明固体撮像装置は上記問題点を解決するため、透明
板の裏面に配線膜を形成し、該配線膜と固体撮像素子の
電極とを透明板・固体撮像素子間に介在させた異方性導
電膜によって電気的に接続するようにしたことを特徴と
する。(E. Means for Solving the Problems) In order to solve the above problems, the solid-state imaging device of the present invention forms a wiring film on the back surface of a transparent plate, and connects the wiring film and the electrodes of the solid-state imaging device to the transparent plate. - A feature is that the solid-state imaging devices are electrically connected by an anisotropic conductive film interposed between them.
(F、作用)
本発明固体撮像装置によれば、元来、異方性導電膜が弾
性を有し、僅かに弾性変形させることによって異方性の
ある導電性を帯びる性質を有しているので、その異方性
導電膜を透明板と固体撮像素子との間に介在させ、その
状態でアオリを調整することができる。従って、透明板
表面に対して固体撮像素子表面が平行になりなときに透
明板と固体撮像素子との間の位置関係を固定することに
より高錆度の位置合せ用基準面を透明板表面に有する固
体撮像装置を得ることができるのである。(F. Effect) According to the solid-state imaging device of the present invention, the anisotropic conductive film originally has elasticity, and has the property of becoming anisotropically conductive when slightly elastically deformed. Therefore, the anisotropic conductive film can be interposed between the transparent plate and the solid-state image sensor, and the tilt can be adjusted in this state. Therefore, by fixing the positional relationship between the transparent plate and the solid-state image sensor when the surface of the solid-state image sensor is not parallel to the surface of the transparent plate, a highly rusty alignment reference plane can be made on the surface of the transparent plate. Therefore, it is possible to obtain a solid-state imaging device having the following characteristics.
(G、実施例)[第1図乃至第3図]
以下、本発明固体撮像装置を図示実施例に従って詳細に
説明する。(G. Embodiment) [FIGS. 1 to 3] Hereinafter, the solid-state imaging device of the present invention will be described in detail according to the illustrated embodiment.
第1図は本発明固体撮像装置の′一つの実施例を示す断
面図である。FIG. 1 is a sectional view showing one embodiment of the solid-state imaging device of the present invention.
図面において、1は例えばセラミックにより形成された
パッケージ、2はパッケージlの内底面上に形成された
固体撮像素子ボンディング用配線膜で、該配線膜2上に
は接着層3を介して固体撮像素子4がマウンティングさ
れている。5は固体撮像素子4表面に形成された電極で
あり、該電極5は固体撮像素子4表面の周縁部に多数形
成されている。6はパッケージ1の上面から側面に渡っ
て形成された配線膜で、固体撮像素子4の電極5と同数
形成されており、電極5の外側にその電極5と対応する
配線膜6が位置するように配置されている。各配線膜6
のパッケージ側面上に位置する部分にはそれぞれリード
7が接続されている。In the drawing, 1 is a package made of ceramic, for example, 2 is a wiring film for bonding the solid-state image sensor formed on the inner bottom surface of the package l, and the solid-state image sensor is bonded on the wiring film 2 via an adhesive layer 3 4 is mounted. Reference numeral 5 denotes an electrode formed on the surface of the solid-state image sensor 4, and a large number of electrodes 5 are formed on the peripheral portion of the surface of the solid-state image sensor 4. Reference numeral 6 denotes a wiring film formed from the top surface to the side surface of the package 1. The number of wiring films 6 is the same as the number of electrodes 5 of the solid-state image sensor 4, and the wiring film 6 corresponding to the electrode 5 is located outside the electrode 5. It is located in Each wiring film 6
A lead 7 is connected to each portion located on the side surface of the package.
8はガラスからなる透明板で、その裏面には配線膜9が
各電極5に対応して設けられており、電極5とそれに対
応する配線膜6との間を接続する役割を果すものである
。Reference numeral 8 denotes a transparent plate made of glass, on the back of which a wiring film 9 is provided corresponding to each electrode 5, and serves to connect between the electrode 5 and the corresponding wiring film 6. .
10a、10bはリング状に形成された異方性導電膜で
、小径の方の異方性導電膜10aは固体撮像素子4と透
明板8との間に介在せしめられて固体撮像素子4表面上
の各電極5とそれに対応するところの配線膜9との間を
電気的に接続する役割を果す。大径の方の異方性導電膜
tobはパッケージ1と透明板8との間に介在せしめら
れて透明板8裏面の配線膜9とパッケージ1の配線膜6
との間を電気的に接続する役割を果す。異方性導電膜1
0a、10bは弾性を備え上下方向に圧縮すると圧縮し
た上下方向にのみ導電性を帯びる性質を有している。10a and 10b are anisotropic conductive films formed in a ring shape, and the anisotropic conductive film 10a with a smaller diameter is interposed between the solid-state image sensor 4 and the transparent plate 8, and is placed on the surface of the solid-state image sensor 4. serves to electrically connect each electrode 5 and the corresponding wiring film 9. The larger diameter anisotropic conductive film tob is interposed between the package 1 and the transparent plate 8, and is interposed between the wiring film 9 on the back surface of the transparent plate 8 and the wiring film 6 of the package 1.
It plays the role of electrically connecting between Anisotropic conductive film 1
0a and 10b have elasticity and have a property that when compressed in the vertical direction, they become conductive only in the compressed vertical direction.
11はパッケージ1に透明板8を固定する樹脂で、該樹
脂11は透明板8の表面か固体撮像素子4の表面に対し
て平行で且つλ方性導電膜10a及び10bが透明板8
と、固体撮像素子4及びパッケージ6上面との間で導電
性を備える程度に圧縮された状態を保つようにバケージ
1に透明板8を接着しており、また封止の役割も果して
いる。Reference numeral 11 denotes a resin for fixing the transparent plate 8 to the package 1. The resin 11 is parallel to the surface of the transparent plate 8 or the surface of the solid-state image sensor 4, and the λ-oriented conductive films 10a and 10b are attached to the transparent plate 8.
A transparent plate 8 is bonded to the package 1 so as to maintain a compressed state between the solid-state image sensor 4 and the upper surface of the package 6 to the extent that the package 6 is conductive, and also serves as a seal.
この固体撮像装置は透明板8の表面が位置合せ用基準面
Sとなっている。In this solid-state imaging device, the surface of the transparent plate 8 serves as a reference surface S for positioning.
第2図(A)乃至(F)は第1図に示した固体撮像装置
の組立方法を工程順に示す断面図である。FIGS. 2A to 2F are cross-sectional views showing a method for assembling the solid-state imaging device shown in FIG. 1 in order of steps.
先ず、同図(A)に示すように固体撮像素子4が゛マウ
ンティングされたパッケージ1、透明板8及びリング状
の異方性導電膜10a及び10bを用意し、次いで、同
図(B)に示すようにパッケージ1上に異方性導電IP
210 a及び10bを介して透明板8を適宜位置合せ
たうえで置く。First, as shown in Figure (A), a package 1 on which a solid-state image sensor 4 is mounted, a transparent plate 8, and ring-shaped anisotropic conductive films 10a and 10b are prepared, and then, as shown in Figure (B), Anisotropic conductive IP on package 1 as shown
The transparent plate 8 is properly aligned and placed via 210a and 10b.
次に、透明板8の表面側から測長器あるいはフォーカス
センサーを用いて固体撮像素子4表面のアオリを検出し
、透明板8に対してパッケージ1を押し付けて異方性導
電膜10a、10bが導電性を帯びる程度に圧縮される
ようにする。そして、異方性導電膜10a、iobを導
電性を帯びる程度に圧縮した状態を保ちつつアオリを検
出しながら第2図(C)、(D)に示すようにパッケー
ジ1の向きを変化させ、同図(E)に示すようにアオリ
が0という検出結果が得られたときパッケージ1の動き
を停止する。Next, the tilt on the surface of the solid-state image sensor 4 is detected from the surface side of the transparent plate 8 using a length measuring device or a focus sensor, and the package 1 is pressed against the transparent plate 8 to form the anisotropic conductive films 10a and 10b. It is compressed to the extent that it becomes conductive. Then, the orientation of the package 1 is changed as shown in FIGS. 2(C) and 2(D) while detecting tilt while keeping the anisotropic conductive films 10a and iob compressed to the extent that they become conductive. As shown in FIG. 5E, when a detection result indicating that the tilt is 0 is obtained, the movement of the package 1 is stopped.
その後、第2図(F)に示すよう、に樹脂11によって
パッケージ1と透明板8との間を固定する。すると、位
置合せ用基準面Sとなる透明板8表面の固体撮像素子4
表面に対する平行度がきわめて高い、換言すれば高精度
の位置合せ用基準面を有した固体撮像装置を得ることが
できるのである。具体的にはアオリを十μm以下にする
ことができる。Thereafter, as shown in FIG. 2(F), the space between the package 1 and the transparent plate 8 is fixed with resin 11. Then, the solid-state image sensor 4 on the surface of the transparent plate 8, which becomes the alignment reference surface S,
It is possible to obtain a solid-state imaging device having an extremely high degree of parallelism to the surface, in other words, a highly accurate alignment reference plane. Specifically, the tilt can be reduced to 10 μm or less.
第3図は本発明の他の実施例を示す断面図である。FIG. 3 is a sectional view showing another embodiment of the present invention.
本実施例はセラミック等からなるパッケージに、マウン
ティングされた固体撮像素子ではなくベアの固体撮像素
子4を樹脂11を介しそ接着し、リード7を透明板8裏
面の配線膜9に半田付けするようにしたものである点で
第1図に示した実施例と異なっているが、固体撮像素子
4の各電極5とそれと対応するところの透明板8裏面の
各配線膜9との間をリング状の異方性導電膜10aによ
って電気的に接続するようにした点では同じである。本
実施例の固体撮像装置の組み立ては、固体撮像素子4の
電極5と透明板9(リード半田付は済)裏面の配線膜9
の内端部との間にリング状の異方性導電膜10aを介在
させ、異方性導電膜10aを導電性を帯びる程度に圧縮
した状態で固体撮像素子4のアオリを検出しながらアオ
リ調整し、アオリがなくなったとき、即ち、固体撮像装
置の位置合せ用基準面Sとなる透明板8表面が固体撮像
素子4表面に平行になったときその状態で固体撮像素子
4と透明板8を樹脂11で固定するという方法で行う。In this embodiment, a bare solid-state image sensor 4, rather than a mounted solid-state image sensor, is bonded to a package made of ceramic or the like through a resin 11, and the leads 7 are soldered to a wiring film 9 on the back surface of a transparent plate 8. This embodiment is different from the embodiment shown in FIG. They are the same in that they are electrically connected by the anisotropic conductive film 10a. The assembly of the solid-state imaging device of this embodiment consists of the electrode 5 of the solid-state imaging device 4 and the wiring film 9 on the back side of the transparent plate 9 (lead soldering has been completed).
A ring-shaped anisotropic conductive film 10a is interposed between the inner end of the anisotropic conductive film 10a, and the tilt adjustment is performed while detecting the tilt of the solid-state image sensor 4 in a state where the anisotropic conductive film 10a is compressed to the extent that it becomes conductive. However, when the tilt disappears, that is, when the surface of the transparent plate 8, which becomes the alignment reference surface S of the solid-state imaging device, becomes parallel to the surface of the solid-state imaging device 4, the solid-state imaging device 4 and the transparent plate 8 are connected in that state. This is done by fixing with resin 11.
尚、12は固体撮像素子4をカバーする樹脂であり、樹
脂11により固体撮像素子4と透明板8を接着固定した
後、即ち樹脂11が硬化した後樹脂12による封止が為
される。Note that 12 is a resin that covers the solid-state image sensor 4, and sealing with the resin 12 is performed after the solid-state image sensor 4 and the transparent plate 8 are adhesively fixed with the resin 11, that is, after the resin 11 is hardened.
(H−発明の効果)
以上に述べたように、本発明固体撮像装置は、透明板の
裏面に、固体撮像素子表面の電極と対応する配線1摸が
形成され、上記固体撮像素子表面の各電極とこれ等と対
応するところの透明板裏面の配線膜との間が、固体撮像
素子と透明板との間に介在せしめられた異方性導電膜を
介して電気的に接続され、接着材により透明板と固体撮
像素子との間に位置関係が固定されてなることを特徴と
するものである。(H-Effects of the Invention) As described above, in the solid-state imaging device of the present invention, a pattern of wiring corresponding to the electrodes on the surface of the solid-state image sensor is formed on the back surface of the transparent plate, and each of the wires on the surface of the solid-state image sensor is The electrodes and the corresponding wiring film on the back side of the transparent plate are electrically connected via an anisotropic conductive film interposed between the solid-state image sensor and the transparent plate, and the adhesive material This is characterized in that the positional relationship between the transparent plate and the solid-state image sensor is fixed.
従って、本発明固体撮像装置によれば、弾性を有し僅か
に弾性変形させることによって異方性のある導電性を帯
びる性質を有している異方性導電膜を透明板と固体撮像
素子との間に介在させ、その状態でアオリを調整するこ
とができる。従うて、透明板表面に対して固体撮像素子
表面が平行になったときに透明板と固体撮像素子との間
の位置関係を固定することにより高精度の位置合せ用基
準面を透明板表面に有する固体撮像装置を得ることがで
きる。Therefore, according to the solid-state imaging device of the present invention, an anisotropic conductive film that has elasticity and has the property of becoming anisotropically conductive when slightly elastically deformed is used between the transparent plate and the solid-state imaging device. It is possible to adjust the tilt in that state by intervening between the two. Therefore, by fixing the positional relationship between the transparent plate and the solid-state image sensor when the surface of the solid-state image sensor is parallel to the surface of the transparent plate, a reference surface for highly accurate alignment can be created on the surface of the transparent plate. It is possible to obtain a solid-state imaging device having the following.
第1図は本発明固体撮像装置の一つの実施例を示す断面
図、第2図(A)乃至(F)は第1図に示した固体撮像
装置の組立方法の一例を工程順に示す断面図、第3図は
本発明固体撮像装置の他の実施例を示す断面図である。
符号の説明
4・・・固体撮像素子、5・・・電極、8・・・透明板
、9・・・配線膜、
10a、iob・・・異方性導電膜、
11・・・接着材、
S・・・位置合せ用基準面。FIG. 1 is a cross-sectional view showing one embodiment of the solid-state imaging device of the present invention, and FIGS. 2(A) to (F) are cross-sectional views showing an example of a method for assembling the solid-state imaging device shown in FIG. 1 in the order of steps. , FIG. 3 is a sectional view showing another embodiment of the solid-state imaging device of the present invention. Explanation of symbols 4... Solid-state image sensor, 5... Electrode, 8... Transparent plate, 9... Wiring film, 10a, iob... Anisotropic conductive film, 11... Adhesive material, S: Reference surface for positioning.
Claims (1)
する配線膜が形成され、 上記固体撮像素子表面の各電極とこれ等と対応するとこ
ろの透明板裏面の配線膜との間が、固体撮像素子と透明
板との間に介在せしめられた異方性導電膜を介して電気
的に接続され、 接着材により透明板と固体撮像素子との間の位置関係が
固定されてなる ことを特徴とする固体撮像装置(1) A wiring film corresponding to the electrodes on the surface of the solid-state image sensor is formed on the back surface of the transparent plate, and there is a gap between each electrode on the surface of the solid-state image sensor and the corresponding wiring film on the back surface of the transparent plate. , the solid-state image sensor and the transparent plate are electrically connected via an anisotropic conductive film interposed between them, and the positional relationship between the transparent plate and the solid-state image sensor is fixed by an adhesive. A solid-state imaging device featuring
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62254062A JP2666299B2 (en) | 1987-10-08 | 1987-10-08 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62254062A JP2666299B2 (en) | 1987-10-08 | 1987-10-08 | Solid-state imaging device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0195553A true JPH0195553A (en) | 1989-04-13 |
JP2666299B2 JP2666299B2 (en) | 1997-10-22 |
Family
ID=17259693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62254062A Expired - Fee Related JP2666299B2 (en) | 1987-10-08 | 1987-10-08 | Solid-state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2666299B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997005660A1 (en) * | 1995-08-02 | 1997-02-13 | Matsushita Electronics Corporation | Solid-state image pickup device and its manufacture |
US6071760A (en) * | 1996-01-17 | 2000-06-06 | Sony Corporation | Solid-state image sensing device |
KR20010058590A (en) * | 1999-12-30 | 2001-07-06 | 마이클 디. 오브라이언 | Package for Charge Coupled Device Using Lead Frame And The Structure of Peripheral Leads Thereof |
JP2001274370A (en) * | 2000-01-21 | 2001-10-05 | Nikon Corp | Package for photodetector and solid-state imaging apparatus |
US7138695B2 (en) * | 2001-05-16 | 2006-11-21 | Samsung Electro-Mechanics Ltd. | Image sensor module and method for fabricating the same |
JP2007259166A (en) * | 2006-03-24 | 2007-10-04 | Sanyo Electric Co Ltd | Tilt adjusting method for imaging device and camera apparatus including imaging device adjusted by the same method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027176A (en) * | 1983-07-25 | 1985-02-12 | Nec Corp | Solid-state image pickup device |
JPS60116157A (en) * | 1983-11-29 | 1985-06-22 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPS617624A (en) * | 1984-06-22 | 1986-01-14 | Fuji Xerox Co Ltd | Formation of amorphous semiconductor layer |
-
1987
- 1987-10-08 JP JP62254062A patent/JP2666299B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027176A (en) * | 1983-07-25 | 1985-02-12 | Nec Corp | Solid-state image pickup device |
JPS60116157A (en) * | 1983-11-29 | 1985-06-22 | Matsushita Electric Ind Co Ltd | Semiconductor device |
JPS617624A (en) * | 1984-06-22 | 1986-01-14 | Fuji Xerox Co Ltd | Formation of amorphous semiconductor layer |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997005660A1 (en) * | 1995-08-02 | 1997-02-13 | Matsushita Electronics Corporation | Solid-state image pickup device and its manufacture |
US5952714A (en) * | 1995-08-02 | 1999-09-14 | Matsushita Electronics Corporation | Solid-state image sensing apparatus and manufacturing method thereof |
US6071760A (en) * | 1996-01-17 | 2000-06-06 | Sony Corporation | Solid-state image sensing device |
KR20010058590A (en) * | 1999-12-30 | 2001-07-06 | 마이클 디. 오브라이언 | Package for Charge Coupled Device Using Lead Frame And The Structure of Peripheral Leads Thereof |
JP2001274370A (en) * | 2000-01-21 | 2001-10-05 | Nikon Corp | Package for photodetector and solid-state imaging apparatus |
US7138695B2 (en) * | 2001-05-16 | 2006-11-21 | Samsung Electro-Mechanics Ltd. | Image sensor module and method for fabricating the same |
JP2007259166A (en) * | 2006-03-24 | 2007-10-04 | Sanyo Electric Co Ltd | Tilt adjusting method for imaging device and camera apparatus including imaging device adjusted by the same method |
Also Published As
Publication number | Publication date |
---|---|
JP2666299B2 (en) | 1997-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1081944B1 (en) | Imaging element, imaging device, camera module and camera system | |
US5506401A (en) | Photoelectric converting device mounting apparatus with anisotropically conductive film for connecting leads of wiring board and electrode pads of photoelectric converting device and fabrication method thereof | |
US20060164539A1 (en) | Camera module, camera system and method of manufacturing a camera module | |
EP1605520A1 (en) | Electronic imaging apparatus | |
US20110299848A1 (en) | Camera Module with Premolded Lens Housing and Method of Manufacture | |
US7154156B2 (en) | Solid-state imaging device and method for producing the same | |
US9025061B2 (en) | Device having an optical module and a supporting plate | |
KR100958102B1 (en) | Camera module, holder for use in a camera module, camera system and method of manufacturing a camera module | |
JP2004242166A (en) | Optical module, its manufacturing method, and electronic equipment | |
US9111827B2 (en) | Manufacturing method of solid-state imaging apparatus, solid-state imaging apparatus, and electronic imaging apparatus | |
JPH0195553A (en) | Solid-state image sensing device | |
JP2005292242A (en) | Imaging apparatus and method for manufacturing the same | |
US6740949B2 (en) | Supporting structure for a solid state image sensing device | |
JPS60212070A (en) | Solid-state image pickup device | |
US20050168845A1 (en) | Optical device | |
JP2006080597A (en) | Image pickup module and method of manufacturing the same | |
JP2008258920A (en) | Solid-state imaging apparatus, and electronic equipment with the same | |
JPH09199701A (en) | Solid-state image pick-up device | |
JPH05275668A (en) | Solid-state image sensing device | |
JP2002222935A (en) | Solid-state image pickup device, manufacturing method thereof, and solid-state image pickup system | |
KR20050026486A (en) | Camera module, holder for use in a camera module, camera system and method of manufacturing a camera module | |
JP2006344838A (en) | Solid imaging device and its manufacturing method | |
TWI607554B (en) | Image module structure | |
JPH0574269B2 (en) | ||
JPH01228178A (en) | Solid state image sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |