JPH0195528A - Wire bonding and equipment therefor - Google Patents

Wire bonding and equipment therefor

Info

Publication number
JPH0195528A
JPH0195528A JP62252992A JP25299287A JPH0195528A JP H0195528 A JPH0195528 A JP H0195528A JP 62252992 A JP62252992 A JP 62252992A JP 25299287 A JP25299287 A JP 25299287A JP H0195528 A JPH0195528 A JP H0195528A
Authority
JP
Japan
Prior art keywords
inner lead
thin metal
metal wire
capillary chip
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62252992A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawashita
川下　浩
Kiyoaki Tsumura
清昭 津村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62252992A priority Critical patent/JPH0195528A/en
Publication of JPH0195528A publication Critical patent/JPH0195528A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H01L2224/48456—Shape
    • H01L2224/48458—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

PURPOSE:To bond a fine line to an inner lead firmly by bonding an inner lead to a fine line whose bonding section with the inner lead is partially plastic- deformed by a capillary chip with a raised area by ultrasonic thermo- compression bonding. CONSTITUTION:A metal fine line 2 is arranged horizontally on an inner lead 1 by a capillary chip 4 then bonded by compressure to the inner lead 1 by the capillary chip 4. A ringed raised area 11 of the capillary chip 4 makes plastic deformation to a part of the metal fine line 2 and the inner lead 1 and the metal fine line 2 are bonded firmly. When the capillary chip 4 is vibrated under this condition, the inner lead 1 and the metal fine line 2 are bonded without clearance therebetween. The metal fine line 2 is thereby bonded to the inner lead 1 tightly.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造過程において、半導体素子の
電極とリードフレームのインナーリードとを金属細線に
よって接続するワイヤボンディング方法およびその方法
を実施するために使用される装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a wire bonding method for connecting an electrode of a semiconductor element and an inner lead of a lead frame with a thin metal wire in the manufacturing process of a semiconductor device, and to implementing the method. It relates to equipment used for this purpose.

〔従来の技術〕[Conventional technology]

従来、金属細線とリードフレームのインナーリードとを
接合するＫは超音波ボンディングが多く使用されている
。通常、インナーリード上には金属細線が確実に接合さ
れるように銀メツキが施されている。ところが、近年、
原価低減のためにこの銀メツキを施すことをやめ、銅合
金フレームに直接ステッチボンドを行うようになってき
ている。Conventionally, ultrasonic bonding has often been used to bond thin metal wires and inner leads of lead frames. Usually, the inner leads are plated with silver to ensure that the thin metal wires are bonded to them. However, in recent years,
In order to reduce costs, silver plating is no longer applied and stitch bonding is now performed directly on the copper alloy frame.

第６図はこの種超音波ボンディング方法によってリード
フレームのインナーリードに金親細線が接合された状態
を示す側断面図、第７図は第６図中−点鎖線で囲んだ部
分の拡大図、第８図（ａ）　ｌ　（ｂ）はこの超音波ボ
ンディング方法に使用されるキャピラリーチップの先端
部分を示す側断面図および底面図である。これらの図に
おいて、１は銅合金によって形成されたリードフレーム
のインナーリード、２は金属細線で、この金属細線２は
金等によって形成され、前記インナーリード１上に接合
されている。３は前記金属細線２におけるインナーリー
ド１との接合部分を示すステッチポンド部、４は前記金
属細線２をインナーリード上に接合させるためのキャピ
ラリーチップで、このキャピラリーチップ４は金属細線
２が挿通され供給される透孔４ａと、前記ステッチボン
ド部３と対応し金属細線２をインナーリード１に圧着さ
せる圧着面４ｂとを有し、超音波振動子（図示せず）に
連結されている。すなわち、このチャピラリ−チップ４
の透孔４ａを通って供給された金属細線２は、キャピラ
リーチップ４がインナーリード２上をインナーリード２
に沿って平行に移動することによってインナーリード２
上に水平に配置される。そして、金属細ｉ！ｉＩ２は、
キャピラリー４によシインナーリード２に押圧され、か
つ超音波振動子（図示せず）がキャピラリーチップ４を
振動させることによって、インナーリード２に接合され
ることになる。この際、第７図に示すように、インナー
リード１と金属ｍ線２との接合部分には、インナーリー
ド１上に銀メツキが施されておらずその表面が平滑でな
いため、隙間５が形成されている。FIG. 6 is a side sectional view showing a state in which the gold wire is bonded to the inner lead of the lead frame by this type of ultrasonic bonding method, and FIG. 7 is an enlarged view of the part surrounded by the dotted chain line in FIG. 6. FIGS. 8(a) and 8(b) are a side sectional view and a bottom view showing the tip portion of a capillary chip used in this ultrasonic bonding method. In these figures, 1 is an inner lead of a lead frame made of a copper alloy, and 2 is a thin metal wire. This thin metal wire 2 is made of gold or the like and is bonded onto the inner lead 1. Reference numeral 3 denotes a stitch pond portion indicating the joint portion of the thin metal wire 2 with the inner lead 1; 4 is a capillary tip for joining the thin metal wire 2 onto the inner lead; the thin metal wire 2 is inserted through the capillary tip 4; It has a through hole 4a to be supplied, and a crimping surface 4b that corresponds to the stitch bond portion 3 and crimps the thin metal wire 2 to the inner lead 1, and is connected to an ultrasonic transducer (not shown). That is, this chapilary chip 4
The thin metal wire 2 is supplied through the through hole 4a, and the capillary tip 4 passes over the inner lead 2.
inner lead 2 by moving parallel to
placed horizontally on top. And metal thin i! iI2 is
The capillary tip 4 is pressed against the inner lead 2 by the capillary 4, and an ultrasonic vibrator (not shown) vibrates the capillary tip 4, thereby joining the capillary tip 4 to the inner lead 2. At this time, as shown in FIG. 7, a gap 5 is formed at the joint between the inner lead 1 and the metal m-wire 2 because the inner lead 1 is not silver plated and its surface is not smooth. has been done.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかるに、とのようなキャピラリーチップ４を使ったワ
イヤボンディング方法においては、金属細！２へ超音波
振動の伝達状態や、インナーリード１の表面あらさによ
って金属細ａ１２の接合強度が左右され、特に、インナ
ーリード１の素面が粗く形成された場合は、インナーリ
ード１と金属細線２との接合部分に隙間５が生じるため
、接合残置が低くなシ信頼性が低下するという問題があ
った。また、金ｒＡＩｉＢｌｆａ２の接合強度は、ステ
ッチポンド部３におけるインナーリード１と金属細線２
とが離間する部位が最も低く、この部位から金属細線２
が切断されやすかった。However, in the wire bonding method using a capillary tip 4 such as that shown in FIG. The bonding strength of the thin metal wire A12 is influenced by the state of transmission of ultrasonic vibrations to the thin metal wire A12 and the surface roughness of the inner lead 1. In particular, when the bare surface of the inner lead 1 is formed rough, the bonding strength between the inner lead 1 and the thin metal wire 2 is affected. Since a gap 5 is generated at the joint portion, there is a problem in that the reliability is lowered due to a small amount of remaining joint. In addition, the bonding strength of the gold rAIiBlfa2 is the inner lead 1 and the thin metal wire 2 at the stitch pound part 3.
The part where the two are separated is the lowest, and from this part
was easily cut off.

〔問題点を解決するための手段〕[Means for solving problems]

本発明に係るワイヤボンディング方法は、金属細線をイ
ンナーリードに圧着させる時に、圧着面に突部を有する
キャピラリーチップによって、インナーリードとの圧着
部分における金属細線の一部を塑性変形させ、この状態
で金属細線とインナーリードとを超音波ボンディングに
よって接合するものである。In the wire bonding method according to the present invention, when a thin metal wire is crimped to an inner lead, a part of the thin metal wire at the crimped portion with the inner lead is plastically deformed by a capillary chip having a protrusion on the crimping surface, and in this state. The thin metal wire and the inner lead are bonded together by ultrasonic bonding.

また、本発明の別の発明に係るワイヤボンディング装置
は、キャピラリーチップにおける圧着面の周縁部に周方
向に沿って環状突部を突設したものである。Further, in a wire bonding device according to another aspect of the present invention, an annular protrusion is provided on the peripheral edge of the crimping surface of the capillary chip along the circumferential direction.

〔作用〕[Effect]

キャビ２リーチツブの突部によシ金属細線が塑性変形さ
れるととによって、この変形部分と対応するインナーリ
ードとの接触部分の接触圧力が増加され、インナーリー
ドに接触する割合が高くなるＯ 〔実施例〕 以下、その構成等を図に示す実施例によシ詳細に説明す
る。When the fine metal wire is plastically deformed by the protrusion of the cavity 2 reach tab, the contact pressure at the contact area between this deformed part and the corresponding inner lead increases, and the proportion of contact with the inner lead increases. Embodiment] Hereinafter, the configuration and the like will be explained in detail based on an embodiment shown in the drawings.

第１図は本発明に係るワイヤボンディング方法によって
インナーリードに金属細線が接合された状態を示す側断
面図、第２図は第１図中−点鎖線で囲んだ部分の拡大図
、第３図（ａ）　、　（ｂ）は本発明のワイヤボンディ
ング方法に使用されるキャビ２リーチツブの先端部分を
示す側断面図および底面図である。これらの図において
前記従来例で説明したものと同一もしくは同等の部材に
ついては同一符号を付し、こζにおいて詳細な説明は省
略する。FIG. 1 is a side cross-sectional view showing a thin metal wire bonded to an inner lead by the wire bonding method according to the present invention, FIG. 2 is an enlarged view of the part surrounded by the dotted chain line in FIG. 1, and FIG. (a) and (b) are a side sectional view and a bottom view showing the tip portion of the cavity 2 reach tab used in the wire bonding method of the present invention. In these figures, the same or equivalent members as those explained in the conventional example are given the same reference numerals, and detailed explanation thereof will be omitted.

これらの図において、１１はステッチボンド部３の一部
を塑性変形させるための環状突部で、この環状突部１１
はキャピラリーチップ４における圧着面４ｂの周縁部に
周方向に沿って一体的に突設されている。また、この環
状突部１１の突出寸法は、金属細線２を切断せずにかつ
キャピラリーチップ４の振動が確実に伝達されるように
、金属細線２の厚み寸法の１／３〜１／２程度に形成す
るのが望ましく、さらに、この環状突部１１の幅寸法は
圧着面４ｂの幅寸法の２／３以下、換言すればステツチ
ボンド部３の全長の２／３以下に形成するのがよい。１
２は前記環状突部１１によって金属細線２に形成された
凹部である。すなわち、前記環状突部１１が形成された
キャピラリーチップ４によ〕金属細線２を押圧し塑性変
形させることによって、との凹部１２が形成されること
に表ル、との凹部１２の深さ寸法は前記環状突部１１の
突出寸法と等しく、金属細線の厚みの１／３〜１／２と
なり、かつステッチボンド部３の長手方向に対する長さ
寸法は環状突部１１の幅寸法と等しく、ステッチボンド
部３における長手方向の寸法の２／３以下になるよう形
成されている。また、との凹部１２の位置は、キャピラ
リーチップ４における圧着面４ｂの周縁部と対向する位
置、すなわち、ステッチボンド部３におけるインナーリ
ード１と金属細線２とが離間する部位に位置付けられて
いる。In these figures, reference numeral 11 denotes an annular protrusion for plastically deforming a part of the stitch bond portion 3, and this annular protrusion 11
are integrally provided on the peripheral edge of the crimp surface 4b of the capillary chip 4 in a protruding manner along the circumferential direction. Further, the protrusion dimension of this annular protrusion 11 is approximately 1/3 to 1/2 of the thickness dimension of the thin metal wire 2 so that the vibration of the capillary tip 4 can be reliably transmitted without cutting the thin metal wire 2. Further, the width of the annular protrusion 11 is preferably 2/3 or less of the width of the crimp surface 4b, in other words, 2/3 or less of the total length of the stitch bond portion 3. 1
Reference numeral 2 denotes a recess formed in the thin metal wire 2 by the annular protrusion 11. That is, by pressing and plastically deforming the thin metal wire 2 by the capillary chip 4 on which the annular protrusion 11 is formed, the recess 12 is formed. is equal to the protrusion dimension of the annular protrusion 11 and is 1/3 to 1/2 of the thickness of the thin metal wire, and the length dimension in the longitudinal direction of the stitch bond part 3 is equal to the width dimension of the annular protrusion 11, and the stitch It is formed to be 2/3 or less of the longitudinal dimension of the bond portion 3. Further, the position of the recess 12 is located at a position facing the peripheral edge of the crimp surface 4b of the capillary chip 4, that is, at a position where the inner lead 1 and the thin metal wire 2 are separated from each other in the stitch bond portion 3.

このような現状突部１１が形成されたキャピラリーチッ
プ４によって、インナーリード１に金属細線２を接合さ
せるには、先ず、金属細線２をキャピラリーチップ４に
よってインナーリード１上に水平に配置させる。次で、
このキャピラリーチップ４によシ金属細線２をインナー
リード１に圧接させる。との際、キャピラリーチップ４
の環状突部１１が金属細線２の一部分を重性変形させる
ことになシ、インナーリード１と金属細線２とが密接さ
れる。そして、この状態でキャピラリーチップ４を振動
させることによって、第２図に示すように１インナーリ
ード１と金属細線２とが、その間に隙間を生じることな
く接合されることになる。In order to bond the thin metal wire 2 to the inner lead 1 using the capillary chip 4 in which the protrusion 11 is currently formed, the thin metal wire 2 is first placed horizontally on the inner lead 1 using the capillary chip 4. Next,
The capillary chip 4 brings the thin metal wire 2 into pressure contact with the inner lead 1. When using capillary tip 4
The inner lead 1 and the thin metal wire 2 are brought into close contact with each other without causing the annular protrusion 11 to cause severe deformation of a portion of the thin metal wire 2. Then, by vibrating the capillary chip 4 in this state, the inner lead 1 and the thin metal wire 2 are joined without creating a gap therebetween, as shown in FIG.

したがって、金属細線２は、ステッチボンド部３におけ
るインナーリード１と金属細線２とが離間する側に環状
突部１１によって塑性変形され凹部１２が形成されるか
ら、との凹部１２と対応するインナーリード１との接触
部分は、他の接触部分よシ接触圧力が大きくなシ、イン
ナーリードに接触する割合が高くなるので、強固に接合
されることになる。Therefore, the thin metal wire 2 is plastically deformed by the annular protrusion 11 to form a recess 12 on the side where the inner lead 1 and the thin metal wire 2 are separated from each other in the stitch bond portion 3. The contact portion with 1 has a higher contact pressure than other contact portions, and the proportion of contact with the inner lead is higher, so that a strong bond is achieved.

なお、上記実施例ではキャピラリーチップ４に形成した
環状突部１１は一つであったが、このような限定にとら
れれることなく、例えば第４図（１）。In the above embodiment, only one annular protrusion 11 was formed on the capillary chip 4, but the present invention is not limited to this, and as shown in FIG. 4(1), for example.

（ｂ）に示すように、キャピラリーチップ４の圧着面４
ｂに環状突部１１１を複数個形成してもよい。このよう
な環状突部１１ｍを有するキャピラリーチップ４によっ
てワイヤボンディングすると、金属細線には第５図に示
すごとく、断面略半円状の凹部１２ｍが複数並設される
ことになる。なお、この第４図および第５図（ａ）　、
　（ｂ）において前記第１図ないし第３図で説明したも
のと同一もしくは同勢部材については同一符号を付し、
詳細な説明は省略する。As shown in (b), the crimping surface 4 of the capillary chip 4
A plurality of annular protrusions 111 may be formed on b. When wire bonding is performed using the capillary chip 4 having such an annular protrusion 11m, a plurality of recesses 12m each having a substantially semicircular cross section are arranged in parallel on the thin metal wire, as shown in FIG. In addition, this figure 4 and figure 5 (a),
In (b), the same or similar members as those explained in FIGS. 1 to 3 are given the same reference numerals,
Detailed explanation will be omitted.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、金Ｒ細線をインナ
ーリードに圧着させる時に、圧着面に突部を有するキャ
ピラリーチップによって、インナーリードとの圧着部分
における金Ｆ４細線の一部を塑性変形させ、この状態で
金属細線とインナーリードとを超音波ボンディングによ
って接合したため、金属細線における塑性変形部分と対
応するインナーリードとの接触部分の接舷圧力が増加さ
れ、インナーリードに接触する割合が高くなるから、イ
ンナーリードの表面が粗く形成された場合でも金属細線
はインナーリードに強固に接合されることになる。As explained above, according to the present invention, when the gold R fine wire is crimped to the inner lead, a part of the gold F4 fine wire at the crimped portion with the inner lead is plastically deformed by the capillary chip having a protrusion on the crimping surface. In this state, the thin metal wire and the inner lead are bonded by ultrasonic bonding, so the contact pressure between the plastically deformed portion of the thin metal wire and the corresponding contact portion with the inner lead is increased, and the proportion of contact with the inner lead is increased. Therefore, even if the surface of the inner lead is formed to be rough, the thin metal wire will be firmly bonded to the inner lead.

また、キャピラリーチップにおける圧着面の周縁部に周
方向に沿って環状突部を形成したため、金属細線の接合
部分におけるインナーリードと金属細線とが離間する部
位の接合強度が向上されることになシ、金属細線がこの
部位で切断しにくくなると共に、キャピラリーチップ４
の振動が金属細線に確実に伝達されるようＫなる。In addition, since an annular protrusion is formed along the circumferential direction on the periphery of the crimp surface of the capillary chip, the bonding strength at the part where the inner lead and the thin metal wire are separated from each other is improved. , it becomes difficult to cut the thin metal wire at this location, and the capillary tip 4
K so that the vibration of is reliably transmitted to the thin metal wire.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明に係るワイヤボンディング方法によって
インナーリードに金属細線が接合された状態を示す側断
面図、第２図は第１図中−点鎖線で囲んだ部分の拡大図
、第３図（ａ）　、　（ｂ）は本発明のワイヤボンディ
ング方法に使用されるキャピラリーチップの先端部分を
示す側断面図および底面図、第４図（ａ）　ｌ　（ｂ）
は本発明の他の実施例に使用されるキャピラリーチップ
の側断面図と底面図、第５図は第４図に示すキャピラリ
ーチップによってインナーリードに金属細線が接合され
た状態を示す側断面図、第６図は従来の超音波ボンディ
ング方法によってリードフレームのインナーリードに金
属細線が接合された状態を示す側断面図、第７図は第６
図中−点鎖線で囲んだ部分の拡大図、第８図（ａ）　、
　（ｂ）は従来の超音波ボンディング方法に使用される
キャピラリーチップの先端部分を示す側断面図および底
面図である。 １・・・・インナーリード、２・・・・金属細線、４・
・・・キャピラリーチップ、４ｂ・・・・圧着面、１１
・・・・環状突部、１２・・・・凹部。FIG. 1 is a side cross-sectional view showing a thin metal wire bonded to an inner lead by the wire bonding method according to the present invention, FIG. 2 is an enlarged view of the part surrounded by the dotted chain line in FIG. 1, and FIG. (a) and (b) are side sectional views and bottom views showing the tip portion of the capillary chip used in the wire bonding method of the present invention, and Fig. 4 (a) l (b)
5 is a side sectional view and a bottom view of a capillary chip used in another embodiment of the present invention, and FIG. 5 is a side sectional view showing a state in which a thin metal wire is joined to an inner lead by the capillary chip shown in FIG. Fig. 6 is a side sectional view showing a state in which thin metal wires are bonded to the inner leads of a lead frame by the conventional ultrasonic bonding method, and Fig.
In the figure - enlarged view of the part surrounded by the dotted chain line, Figure 8 (a),
(b) is a side sectional view and a bottom view showing the tip portion of a capillary chip used in a conventional ultrasonic bonding method. 1... Inner lead, 2... Fine metal wire, 4...
...Capillary chip, 4b...Crimp surface, 11
...Annular protrusion, 12...Concavity.

Claims (2)

【特許請求の範囲】[Claims] （１）半導体素子の電極とリードフレームのインナーリ
ードとを接続する金属細線を、キャピラリーチップを使
用する超音波ボンディングによつてインナーリードに接
合させるワイヤボンディング方法において、前記金属細
線をインナーリードに圧着させる時に、圧着面に突部を
有するキャピラリーチップによつて、インナーリードと
の圧着部分における金属細線の一部を塑性変形させ、こ
の状態で金属細線とインナーリードとを超音波ボンディ
ングによつて接合したことを特徴とするワイヤボンディ
ング方法。(1) In a wire bonding method in which a thin metal wire connecting an electrode of a semiconductor element and an inner lead of a lead frame is bonded to the inner lead by ultrasonic bonding using a capillary chip, the thin metal wire is crimped to the inner lead. At this time, a portion of the thin metal wire at the crimped portion with the inner lead is plastically deformed by a capillary chip having a protrusion on the crimping surface, and in this state, the thin metal wire and the inner lead are bonded by ultrasonic bonding. A wire bonding method characterized by: （２）超音波振動子に連結されかつ金属細線をリードフ
レームのインナーリードに圧着させるキャピラリーチッ
プを備えたワイヤボンディング装置において、前記キャ
ピラリーチップにおける圧着面の周縁部に周方向に沿つ
て環状突部を突設したことを特徴とするワイヤボンディ
ング装置。(2) In a wire bonding device equipped with a capillary chip connected to an ultrasonic vibrator and for crimping a thin metal wire to an inner lead of a lead frame, an annular protrusion is formed along the circumferential direction on the periphery of the crimping surface of the capillary chip. A wire bonding device characterized by a protruding structure.
JP62252992A 1987-10-07 1987-10-07 Wire bonding and equipment therefor Pending JPH0195528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62252992A JPH0195528A (en) 1987-10-07 1987-10-07 Wire bonding and equipment therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62252992A JPH0195528A (en) 1987-10-07 1987-10-07 Wire bonding and equipment therefor

Publications (1)

Publication Number Publication Date
JPH0195528A true JPH0195528A (en) 1989-04-13

Family

ID=17244993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62252992A Pending JPH0195528A (en) 1987-10-07 1987-10-07 Wire bonding and equipment therefor

Country Status (1)

Country Link
JP (1) JPH0195528A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method

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