JPH0174275U - - Google Patents
Info
- Publication number
- JPH0174275U JPH0174275U JP1987167435U JP16743587U JPH0174275U JP H0174275 U JPH0174275 U JP H0174275U JP 1987167435 U JP1987167435 U JP 1987167435U JP 16743587 U JP16743587 U JP 16743587U JP H0174275 U JPH0174275 U JP H0174275U
- Authority
- JP
- Japan
- Prior art keywords
- heating furnace
- semiconductor
- peak temperature
- core tube
- quartz ampoule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000003708 ampul Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 3
- 239000010453 quartz Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000011449 brick Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の半導体製造用加熱炉の一実施
例を示す断面図、第２図は第１図のＡ―Ａ′線断
面図、第３図は本考案の他の実施例を示す斜視図
、第４図は半導体製造用加熱炉の温度分布特性を
示す説明図である。
４：加熱炉、６：断熱材、７：耐熱レンガ、８
：炉心管、１０，１５：ピーク温度発生用ヒータ
、１１，１６：電極、１７：定かつ車、１８：ワ
イヤ。
Fig. 1 is a cross-sectional view showing one embodiment of a heating furnace for semiconductor manufacturing of the present invention, Fig. 2 is a cross-sectional view taken along line A-A' in Fig. 1, and Fig. 3 is a cross-sectional view showing another embodiment of the present invention. The perspective view and FIG. 4 are explanatory diagrams showing temperature distribution characteristics of a heating furnace for semiconductor manufacturing. 4: Heating furnace, 6: Insulating material, 7: Heat-resistant brick, 8
: Furnace tube, 10, 15: Heater for peak temperature generation, 11, 16: Electrode, 17: Fixed wheel, 18: Wire.
Claims (1)
れた炉心管に石英アンプルを挿入し、該石英アン
プル内の一端に化合物半導体を構成する元素の一
つを入れて蒸発源とし、他端には他の構成元素と
種結晶と共にボートに入れて配置し、前記加熱炉
により前記石英アンプルを加熱して半導体の単結
晶を成長させる半導体製造用加熱炉において、前
記炉心管の中央部外周に、前記化合物半導体単結
晶の溶融ゾーンを形成する炭化けい素製のピーク
温度発生用ヒータが設けてあることを特徴とする
半導体製造用加熱炉。 (2) 前記ピーク温度発生用ヒータは、垂直方向
上部に発生熱を放流する間隙部を有するものであ
る実用新案登録請求の範囲第１項記載の半導体装
置用加熱炉。 (3) 前記ピーク温度発生用ヒータは、炉心管長
手方向への移動を可能とする駆動機構を有するも
のである実用新案登録請求の範囲第１項記載の半
導体装置用加熱炉。[Scope of Claim for Utility Model Registration] (1) A quartz ampoule is inserted into a furnace core tube disposed horizontally through the center of the heating furnace, and one end of the quartz ampoule is filled with one of the elements constituting the compound semiconductor. A heating furnace for semiconductor manufacturing in which one end is placed in a boat with other constituent elements and a seed crystal, and the heating furnace heats the quartz ampoule to grow a semiconductor single crystal. A heating furnace for semiconductor manufacturing, characterized in that a peak temperature generating heater made of silicon carbide that forms a melting zone of the compound semiconductor single crystal is provided on the outer periphery of the central portion of the furnace core tube. (2) The heating furnace for a semiconductor device according to claim 1, wherein the peak temperature generation heater has a vertically upper gap portion through which the generated heat is released. (3) The heating furnace for semiconductor devices according to claim 1, wherein the peak temperature generation heater has a drive mechanism that allows movement in the longitudinal direction of the reactor core tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987167435U JPH0174275U (en) | 1987-10-31 | 1987-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987167435U JPH0174275U (en) | 1987-10-31 | 1987-10-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0174275U true JPH0174275U (en) | 1989-05-19 |
Family
ID=31455727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987167435U Pending JPH0174275U (en) | 1987-10-31 | 1987-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0174275U (en) |
-
1987
- 1987-10-31 JP JP1987167435U patent/JPH0174275U/ja active Pending
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