JPH0167752U - - Google Patents

Info

Publication number
JPH0167752U
JPH0167752U JP1987162630U JP16263087U JPH0167752U JP H0167752 U JPH0167752 U JP H0167752U JP 1987162630 U JP1987162630 U JP 1987162630U JP 16263087 U JP16263087 U JP 16263087U JP H0167752 U JPH0167752 U JP H0167752U
Authority
JP
Japan
Prior art keywords
metal pattern
defective
marked
semiconductor device
changed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987162630U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987162630U priority Critical patent/JPH0167752U/ja
Publication of JPH0167752U publication Critical patent/JPH0167752U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案に係る半導体装置の一実施例を
示すペレツトの平面図、第2図と第3図は本考案
に係る金属パターンの一実施例を示す格子状パタ
ーンとそれに付けられた不良マークの平面図、第
4図乃至第8図は本考案に係る金属パターンの各
実施例を示す各平面図、第9図は半導体ウエーハ
の平面図である。 2……ペレツト、4……金属パターン。
FIG. 1 is a plan view of a pellet showing an embodiment of a semiconductor device according to the present invention, and FIGS. 2 and 3 are a grid pattern and defects attached thereto, showing an embodiment of a metal pattern according to the present invention. A plan view of the mark, FIGS. 4 to 8 are plan views showing each embodiment of the metal pattern according to the present invention, and FIG. 9 is a plan view of a semiconductor wafer. 2...Pellet, 4...Metal pattern.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体ウエーハに多数形成されている各ペレツ
トの表面の電極パツドを除く任意の位置に、レー
ザ照射によつてパターンが変化して不良マーキン
グされる金属パターンを形成したことを特徴とす
る半導体装置。
A semiconductor device characterized in that a metal pattern whose pattern is changed by laser irradiation and marked as defective is formed at any position other than an electrode pad on the surface of each pellet formed in large numbers on a semiconductor wafer.
JP1987162630U 1987-10-23 1987-10-23 Pending JPH0167752U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987162630U JPH0167752U (en) 1987-10-23 1987-10-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987162630U JPH0167752U (en) 1987-10-23 1987-10-23

Publications (1)

Publication Number Publication Date
JPH0167752U true JPH0167752U (en) 1989-05-01

Family

ID=31446627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987162630U Pending JPH0167752U (en) 1987-10-23 1987-10-23

Country Status (1)

Country Link
JP (1) JPH0167752U (en)

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