JPH0160551B2 - - Google Patents
Info
- Publication number
- JPH0160551B2 JPH0160551B2 JP13824481A JP13824481A JPH0160551B2 JP H0160551 B2 JPH0160551 B2 JP H0160551B2 JP 13824481 A JP13824481 A JP 13824481A JP 13824481 A JP13824481 A JP 13824481A JP H0160551 B2 JPH0160551 B2 JP H0160551B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- low
- substrate
- resist
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005855 radiation Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000004380 ashing Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 230000008961 swelling Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000007141 radiochemical reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138244A JPS5839779A (ja) | 1981-09-01 | 1981-09-01 | 写真蝕刻方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56138244A JPS5839779A (ja) | 1981-09-01 | 1981-09-01 | 写真蝕刻方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5839779A JPS5839779A (ja) | 1983-03-08 |
| JPH0160551B2 true JPH0160551B2 (enrdf_load_stackoverflow) | 1989-12-22 |
Family
ID=15217435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56138244A Granted JPS5839779A (ja) | 1981-09-01 | 1981-09-01 | 写真蝕刻方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5839779A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62251748A (ja) * | 1986-04-25 | 1987-11-02 | Hoya Corp | パタ−ン形成方法 |
| EP0909987A1 (en) * | 1990-09-26 | 1999-04-21 | Canon Kabushiki Kaisha | Photolithographic processing method and apparatus |
| US10545408B2 (en) * | 2017-08-18 | 2020-01-28 | Varian Semiconductor Equipment Associates, Inc. | Performance improvement of EUV photoresist by ion implantation |
-
1981
- 1981-09-01 JP JP56138244A patent/JPS5839779A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5839779A (ja) | 1983-03-08 |
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