JPH0158930U - - Google Patents
Info
- Publication number
- JPH0158930U JPH0158930U JP15498287U JP15498287U JPH0158930U JP H0158930 U JPH0158930 U JP H0158930U JP 15498287 U JP15498287 U JP 15498287U JP 15498287 U JP15498287 U JP 15498287U JP H0158930 U JPH0158930 U JP H0158930U
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- cylindrical surface
- resistance heater
- cvd apparatus
- reaction vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 235000012431 wafers Nutrition 0.000 claims 3
- 239000002994 raw material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の実施例を示す縦型ＣＶＤ装置
の二重構造サセプタの近傍縦断面図。第２図は従
来例に係る縦型ＣＶＤ装置のサセプタ近傍縦断面
図。第３図はサセプタのウエハ装着面での温度分
布を示す図。
１…サセプタ、２…ウエハ装着面、３…抵抗加
熱ヒータ、４…反射板、５…サセプタ支持柱、６
…内サセプタ、７…反応容器、８…ガス流入口、
９…回転機構、１０…ガス排出口。
FIG. 1 is a longitudinal sectional view of a double structure susceptor of a vertical CVD apparatus showing an embodiment of the present invention. FIG. 2 is a vertical cross-sectional view of the vicinity of a susceptor of a vertical CVD apparatus according to a conventional example. FIG. 3 is a diagram showing the temperature distribution on the wafer mounting surface of the susceptor. DESCRIPTION OF SYMBOLS 1... Susceptor, 2... Wafer mounting surface, 3... Resistance heater, 4... Reflection plate, 5... Susceptor support column, 6
...Inner susceptor, 7...Reaction vessel, 8...Gas inlet,
9...Rotation mechanism, 10...Gas exhaust port.
Claims (1)
する円筒面１１と円筒面１１の上端に連続する円
板面１２とよりなり円板面１２の中央をサセプタ
支持柱５で支持されるバレル型サセプタであつて
、縦型ＣＶＤ装置の反応容器７の中に設けられ、
円筒面１１の内部に設けられた抵抗加熱ヒータ３
によつて加熱され、反応容器７の上頂部から導入
された原料ガスが加熱され気相反応しサセプタ１
の上に装着されたウエハの上に反応生成物の薄膜
が形成されるようにしたサセプタに於て、抵抗加
熱ヒータ３の内側に内円筒面１５を有しこれに続
いてサセプタ１の円筒面１１のウエハ装着面より
上部に連続する円環部１４を持つ内サセプタ６を
設けた事を特徴とするＣＶＤ装置用２重構造サセ
プタ。 A barrel-shaped susceptor consisting of a cylindrical surface 11 having a plurality of wafer device surfaces 2 on which wafers are to be mounted, and a disk surface 12 continuous to the upper end of the cylindrical surface 11, with the center of the disk surface 12 supported by a susceptor support column 5. and is provided in the reaction vessel 7 of the vertical CVD apparatus,
Resistance heater 3 provided inside the cylindrical surface 11
The raw material gas introduced from the top of the reaction vessel 7 is heated and reacts in the gas phase, and the susceptor 1
The susceptor has an inner cylindrical surface 15 on the inside of the resistance heater 3, and the cylindrical surface of the susceptor 1 has an inner cylindrical surface 15 on the inside of the resistance heater 3. A double structure susceptor for a CVD apparatus, characterized in that an inner susceptor 6 having an annular portion 14 continuous above a wafer mounting surface 11 is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15498287U JPH0158930U (en) | 1987-10-09 | 1987-10-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15498287U JPH0158930U (en) | 1987-10-09 | 1987-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0158930U true JPH0158930U (en) | 1989-04-13 |
Family
ID=31432196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15498287U Pending JPH0158930U (en) | 1987-10-09 | 1987-10-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0158930U (en) |
-
1987
- 1987-10-09 JP JP15498287U patent/JPH0158930U/ja active Pending