JPH01136181U

JPH01136181U -

Info

Publication number: JPH01136181U
Application number: JP2671788U
Authority: JP
Priority date: 1988-02-29
Filing date: 1988-02-29
Publication date: 1989-09-18

Description

[Brief explanation of the drawing]

第１図は本考案の気相成長装置の一例を示す縦
断面図。第２図はダスト溜めを外した状態の縦断
面図。第３図は下チヤンバを外した状態の縦断面
図。第４図は中チヤンバを外した状態の縦断面図
。第５図は従来例に係る気相成長装置の縦断面図
。１……原料ガス供給系、２……原料ガス導入管
、３……サセプタ、４……基板結晶、５……サセ
プタ回転駆動部、６……真空排気系、７……半球
体、８，９……サセプタ支持棒、１１……抵抗加
熱ヒータ、１２……ヒータ用電流導入端子、１３
……冷却水ジヤケツト、１４……底板、１６……
冷却水ジヤケツト、１７，１８……軸受、１９…
…結合部、２０，２１……冷却水管、２３，２４
……ベベルギヤ、２５……横シヤフト、３１〜３
６……フランジ、Ａ……上チヤンバ、Ｂ……中チ
ヤンバ、Ｃ……下チヤンバ、Ｄ……ダスト溜め。 FIG. 1 is a longitudinal sectional view showing an example of the vapor phase growth apparatus of the present invention. FIG. 2 is a longitudinal sectional view with the dust reservoir removed. FIG. 3 is a longitudinal sectional view with the lower chamber removed. FIG. 4 is a longitudinal sectional view with the middle chamber removed. FIG. 5 is a longitudinal sectional view of a conventional vapor phase growth apparatus. DESCRIPTION OF SYMBOLS 1... Source gas supply system, 2... Source gas introduction pipe, 3... Susceptor, 4... Substrate crystal, 5... Susceptor rotation drive unit, 6... Vacuum exhaust system, 7... Hemisphere, 8, 9... Susceptor support rod, 11... Resistance heater, 12... Current introduction terminal for heater, 13
...Cooling water jacket, 14...Bottom plate, 16...
Cooling water jacket, 17, 18...Bearing, 19...
...Joining part, 20, 21...Cooling water pipe, 23, 24
...Bevel gear, 25...Horizontal shaft, 31-3
6...Flange, A...Upper chamber, B...Middle chamber, C...Lower chamber, D...Dust reservoir.

Claims

[Scope of utility model registration request]

A substantially cylindrical susceptor 3 on which a plurality of compound semiconductor substrate crystals 4 can be mounted on the side surface, susceptor support rods 8 and 9 that support the susceptor 3, a susceptor rotation drive unit 5 that rotates the susceptor support rod, and the susceptor 3.
and a heater 11 for heating the substrate crystal 4;
A vacuum chamber that surrounds the susceptor 3 and the heater 11 and can be evacuated to a vacuum, and a raw material gas into which a raw material gas consisting of organic metal and hydride gas containing the constituent elements of the compound semiconductor thin film and hydrogen gas is introduced into the vacuum chamber. In a vapor phase growth apparatus having an introduction pipe 2, the vacuum chamber is divided into four parts: an upper chamber A, a middle chamber B, a lower chamber C, and a dust reservoir D, and the upper chamber A is fixed to a support member. The middle chamber B, the lower chamber C, and the dust reservoir D are mutually removable, and the susceptor rotation drive unit and the current introduction terminal for the heater are attached to the lower chamber C. Device.