JPH0156538B2 - - Google Patents
Info
- Publication number
- JPH0156538B2 JPH0156538B2 JP3928785A JP3928785A JPH0156538B2 JP H0156538 B2 JPH0156538 B2 JP H0156538B2 JP 3928785 A JP3928785 A JP 3928785A JP 3928785 A JP3928785 A JP 3928785A JP H0156538 B2 JPH0156538 B2 JP H0156538B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- coating
- forming
- gate electrode
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3928785A JPS61198786A (ja) | 1985-02-28 | 1985-02-28 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3928785A JPS61198786A (ja) | 1985-02-28 | 1985-02-28 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61198786A JPS61198786A (ja) | 1986-09-03 |
| JPH0156538B2 true JPH0156538B2 (OSRAM) | 1989-11-30 |
Family
ID=12548938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3928785A Granted JPS61198786A (ja) | 1985-02-28 | 1985-02-28 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61198786A (OSRAM) |
-
1985
- 1985-02-28 JP JP3928785A patent/JPS61198786A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61198786A (ja) | 1986-09-03 |
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