JPH0153504B2 - - Google Patents

Info

Publication number
JPH0153504B2
JPH0153504B2 JP58103420A JP10342083A JPH0153504B2 JP H0153504 B2 JPH0153504 B2 JP H0153504B2 JP 58103420 A JP58103420 A JP 58103420A JP 10342083 A JP10342083 A JP 10342083A JP H0153504 B2 JPH0153504 B2 JP H0153504B2
Authority
JP
Japan
Prior art keywords
gold
ball
wire bonding
wire
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58103420A
Other languages
Japanese (ja)
Other versions
JPS59229830A (en
Inventor
Susumu Kamyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP58103420A priority Critical patent/JPS59229830A/en
Publication of JPS59229830A publication Critical patent/JPS59229830A/en
Publication of JPH0153504B2 publication Critical patent/JPH0153504B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85043—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a flame torch, e.g. hydrogen torch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 この判明は半導体装置等の組立時に行われるワ
イヤボンデイングに係り、特に、ワイヤボンデイ
ングの際、フアーストボンデイングがオープン不
良となつた場合にも、ワイヤボンデイング装置を
停止させることなく次のワイヤボンデイングを正
常に続行することができるワイヤボンデイング方
法に関する。[Detailed Description of the Invention] (a) Field of Industrial Application This finding relates to wire bonding performed during assembly of semiconductor devices, etc., and is particularly useful in cases where the first bond becomes an open failure during wire bonding. , relates to a wire bonding method that allows the next wire bonding to be normally continued without stopping the wire bonding apparatus.

(ロ) 従来技術 例えば、自動ワイヤボンデイング機で、半導体
素子の所定の電極とリードフレームの所定の端子
を金線で接続する際、半導体素子に行われるボン
デイングであるフアーストボンデイングがオープ
ン不良となることがある。このような場合、多く
の自動ワイヤボンデイング機は第１図に示すよう
にヒータプロツク１の上を順次移動していくリー
ドフレーム２の適宜の個所に捨て打ちを行うこと
により、キヤピラリ３の先端部分に新たなフアー
ストボール４を形成している。そして、このフア
ーストボール４を半導体素子５の所定の電極に再
度ボンデイングすることによつて、正常なボンデ
イング作業を続行するようにしている。同図の６
はリードフレーム表面に捨て打ちされた金線を示
す。(b) Prior art For example, when using an automatic wire bonding machine to connect a predetermined electrode of a semiconductor element and a predetermined terminal of a lead frame with a gold wire, an open failure occurs during first bonding, which is the bonding performed on the semiconductor element. Sometimes. In such a case, many automatic wire bonding machines are used to bond the tip of the capillary 3 by making a temporary bond at an appropriate location on the lead frame 2 that is sequentially moving over the heater block 1, as shown in FIG. A new first ball 4 is formed. By bonding this first ball 4 to a predetermined electrode of the semiconductor element 5 again, normal bonding work is continued. 6 in the same figure
indicates the gold wire shot on the surface of the lead frame.

しかしながら、前述したようなフアーストボン
デイングのオープン不良は、該フアーストボンデ
イング時のフアーストボールが小さいことによる
場合がある。また、半導体素子の電極に接続され
なかつたフアーストボールの先端部分には半導体
素子表面から離脱したアルミニウム電極の一部や
シリコンのかけら等の異物が付着していることが
多い。 However, the above-mentioned open failure during first bonding may be caused by the first ball being small during the first bonding. Furthermore, foreign matter such as a part of the aluminum electrode detached from the surface of the semiconductor element or a piece of silicon is often attached to the tip of the first ball that is not connected to the electrode of the semiconductor element.

そのため、前述したようにリードフレーム上に
捨て打ちを行つて新たなフアーストボールを形成
しようとしても、リードフレームに金線が着かな
いためにフアーストボールが形成されず、結局、
自動ワイヤボンデイング機が停止してしまうこと
が多い。 Therefore, as mentioned above, even if you try to form a new first ball by making a throw shot on the lead frame, the first ball will not be formed because the gold wire will not attach to the lead frame, and in the end,
Automatic wire bonding machines often stop.

(ハ) 目 的 この発明は、ワイヤボンデイングの際、フアー
ストボンデイングがオープン不良となつた場合に
も、新たなフアーストボールを確実に形成するこ
とができるワイヤボンデイング方法を提供するこ
とを目的としている。(c) Purpose The purpose of this invention is to provide a wire bonding method that can reliably form a new first ball even if the first bond becomes an open failure during wire bonding. There is.

(ニ) 構 成 この発明に係るワイヤボンデイング方法は、ワ
イヤボンデイングの際、フアーストボンデイング
がオープン不良となつた場合に、ヒータブロツク
上の固定された位置に設けられた金の上に捨て打
ちを行つて、新たなフアーストボールを形成した
後、ワイヤボンデイングを続行するようにしたこ
とを特徴としている。(D) Structure The wire bonding method according to the present invention is such that, when the first bonding fails to open during wire bonding, a drop is placed on the gold provided at a fixed position on the heater block. This feature is characterized in that wire bonding is continued after a new first ball is formed.

(ホ) 実施例 第２図はこの発明に係るワイヤボンデイング方
法の実施例の説明図である。(E) Embodiment FIG. 2 is an explanatory diagram of an embodiment of the wire bonding method according to the present invention.

同図において第１図と同一部分は同一符号で示
している。７はヒータブロツク１上の固定された
適宜の位置に設けられる金であつて、例えば適宜
の金属板の表面に金メツキが施されたもの、或い
は適宜の金属板の表面に予め金線の捨て打ち等を
行つて金を付着させたもの等が用いられる。 In this figure, the same parts as in FIG. 1 are indicated by the same reference numerals. Reference numeral 7 denotes gold provided at a fixed and appropriate position on the heater block 1, for example, the surface of an appropriate metal plate is plated with gold, or the surface of an appropriate metal plate is coated with gold wire in advance. Those that have been hammered and coated with gold are used.

しかして、フアーストボンデイングがオープン
不良となつた場合に、新たなフアーストボールを
形成するための捨て打ちを前記金７の上に行う。
フアーストボールはよく知られている水素トーチ
又は電気トーチのいずれの方法によつて形成され
るものであつてもよい。 If the first bonding results in an open failure, a waste shot is performed on the metal 7 to form a new first ball.
The first ball may be formed by any of the well-known hydrogen torch or electric torch methods.

(ヘ) 効 果 この発明にかかるワイヤボンデイング方法は、
フアーストボールを形成するための捨て打ちをヒ
ータブロツク上の固定された位置に設けられた金
の上に行うものであるから、フアーストボンデイ
ング不成功の後にキヤピラリの先端に小さな金ボ
ールしかない場合であつても、金と金という極め
て良好な接着性をしめす金属同志であるため、前
記金ボールはヒータブロツク上の金と容易に接着
し、これにより確実に新たなフアーストボールを
形成することができる。(F) Effects The wire bonding method according to the present invention has the following effects:
Since the first ball is formed on the gold placed at a fixed position on the heater block, if only a small gold ball is left at the tip of the capillary after the first bonding is unsuccessful. However, since gold and gold are two metals that exhibit extremely good adhesion, the gold ball easily adheres to the gold on the heater block, thereby reliably forming a new first ball. Can be done.

また、フアーストボンデイングの不成功後の金
ボールの先端に異物が多少付着していても、前記
理由、更には金が極めて柔らかいという特性によ
り、捨て打ちの際の荷重によつて、該金ボールが
変形するので、前記異物が若干押しのけられる結
果、捨て打ちすべき金線がヒータブロツク上に設
けられた金に接続し、新たなフアーストボールが
形成される。 In addition, even if some foreign matter adheres to the tip of the gold ball after first bonding is unsuccessful, due to the above reasons, and also due to the extremely soft nature of gold, the gold ball may be affected by the load during throw-off. deforms, the foreign matter is pushed away a little, and as a result, the gold wire to be thrown away connects to the gold provided on the heater block, forming a new first ball.

また、この発明は、ヒータブロツク上の固定さ
れた位置に次々捨て打ちを行うものであるから、
捨て打ちが行われるごとにヒータブロツクに設け
られた金に表面がきれいな金が供給されることに
なり、その接着性を長期間保持することができ
る。 In addition, since this invention performs discarding shots one after another at fixed positions on the heater block,
Each time the die casting is performed, gold with a clean surface is supplied to the gold provided on the heater block, and its adhesion can be maintained for a long period of time.

上述したように、この発明によれば、捨て打ち
の際に新たなフアーストボールを確実に形成する
ことができるので、フアーストボールが形成され
ないことによる自動ワイヤボンデイング機の停止
を大幅に減少させることができる。 As described above, according to the present invention, it is possible to reliably form a new first ball during discarding, thereby significantly reducing the number of stoppages of the automatic wire bonding machine due to the first ball not being formed. be able to.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のワイヤボンデイング方法の説明
図、第２図はこの発明にかかるワイヤボンデイン
グ方法の実施例の説明図である。 １……ヒータブロツク、２……リードフレー
ム、３……キヤピラリ、４……フアーストボー
ル、５……半導体素子、６……捨て打ちされた金
線、７……金。 FIG. 1 is an explanatory diagram of a conventional wire bonding method, and FIG. 2 is an explanatory diagram of an embodiment of the wire bonding method according to the present invention. 1... Heater block, 2... Lead frame, 3... Capillary, 4... First ball, 5... Semiconductor element, 6... Discarded gold wire, 7... Gold.

Claims (1)

【特許請求の範囲】[Claims] １ 金線によるワイヤボンデイングの際、フアー
ストボンデイングがオープン不良となつた場合
に、ヒータブロツク上の固定された位置に設けら
れた金の上に捨て打ちを行つて、新たなフアース
トボールを形成した後、ワイヤボンデイングを続
行するようにしたことを特徴とするワイヤボンデ
イング方法。1 During wire bonding with gold wire, if the first bond fails to open, a new first ball can be formed by casting a drop onto the gold provided at a fixed position on the heater block. A wire bonding method characterized in that wire bonding is continued after the wire bonding is performed.
JP58103420A 1983-06-09 1983-06-09 Wire bonding method Granted JPS59229830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58103420A JPS59229830A (en) 1983-06-09 1983-06-09 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58103420A JPS59229830A (en) 1983-06-09 1983-06-09 Wire bonding method

Publications (2)

Publication Number Publication Date
JPS59229830A JPS59229830A (en) 1984-12-24
JPH0153504B2 true JPH0153504B2 (en) 1989-11-14

Family

ID=14353543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58103420A Granted JPS59229830A (en) 1983-06-09 1983-06-09 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS59229830A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020242417A1 (en) * 2019-05-30 2020-12-03 Turkcell Teknoloji Arastirma Ve Gelistirme Anonim Sirketi A system for creating an annotation for cases containing anomaly
EP4063984A1 (en) 2021-03-26 2022-09-28 Yokogawa Electric Corporation Apparatus, method, and program for the estimation of a state of a device
EP4242767A1 (en) 2022-03-03 2023-09-13 Yokogawa Electric Corporation Apparatus, method, and program

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020242417A1 (en) * 2019-05-30 2020-12-03 Turkcell Teknoloji Arastirma Ve Gelistirme Anonim Sirketi A system for creating an annotation for cases containing anomaly
EP4063984A1 (en) 2021-03-26 2022-09-28 Yokogawa Electric Corporation Apparatus, method, and program for the estimation of a state of a device
EP4242767A1 (en) 2022-03-03 2023-09-13 Yokogawa Electric Corporation Apparatus, method, and program

Also Published As

Publication number Publication date
JPS59229830A (en) 1984-12-24

Similar Documents

Publication Publication Date Title
JPS6396947A (en) Lead frame semiconductor device
KR100318818B1 (en) Protective film bonding to leadframe
JPS5842262A (en) Connection of lead wire for hybrid integrated circuit
TW201618627A (en) Method for producing a soldered connection
JPH0153504B2 (en)
DE3704200C2 (en)
JPH07288255A (en) Formation of solder bump
US5935719A (en) Lead-free, nickel-free and cyanide-free plating finish for semiconductor leadframes
JPH04162760A (en) Lead frame
JPH05315517A (en) Semiconductor device
JPS634945B2 (en)
JPH10313087A (en) Electronic part lead material
JPS6020931Y2 (en) semiconductor equipment
JPH0233957A (en) Lead frame for semiconductor device
KR101167650B1 (en) Lead frame for semiconductor device
JP2991174B2 (en) Lead frame for semiconductor device and method of manufacturing the semiconductor device
JPH04148555A (en) Lead frame and semiconductor device using it
JPH06209025A (en) Packaging structure of semiconductor device
JPS58127355A (en) Lead frame
JP2717199B2 (en) Method of forming bump on film carrier
JPS63120450A (en) Manufacture of semiconductor device and lead frame used therefor
JP2520610Y2 (en) Lead frame
JPS6148953A (en) Manufacture of resin-sealed semiconductor device
JPH0846115A (en) Metallic film forming apparatus
WO2001097256A2 (en) A method of and apparatus for monitoring a ball forming process