JPH0147905B2 - - Google Patents
Info
- Publication number
- JPH0147905B2 JPH0147905B2 JP55006866A JP686680A JPH0147905B2 JP H0147905 B2 JPH0147905 B2 JP H0147905B2 JP 55006866 A JP55006866 A JP 55006866A JP 686680 A JP686680 A JP 686680A JP H0147905 B2 JPH0147905 B2 JP H0147905B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- region
- drain
- buried layer
- buried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 230000005684 electric field Effects 0.000 description 12
- 230000015654 memory Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP686680A JPS56104473A (en) | 1980-01-25 | 1980-01-25 | Semiconductor memory device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP686680A JPS56104473A (en) | 1980-01-25 | 1980-01-25 | Semiconductor memory device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56104473A JPS56104473A (en) | 1981-08-20 |
| JPH0147905B2 true JPH0147905B2 (fr) | 1989-10-17 |
Family
ID=11650154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP686680A Granted JPS56104473A (en) | 1980-01-25 | 1980-01-25 | Semiconductor memory device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56104473A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59126674A (ja) * | 1983-01-10 | 1984-07-21 | Toshiba Corp | 情報記憶用半導体装置 |
| JPH0722194B2 (ja) * | 1984-07-24 | 1995-03-08 | 工業技術院長 | 不揮発性メモリ |
| JPH034567A (ja) * | 1989-06-01 | 1991-01-10 | Toshiba Corp | 半導体記憶装置 |
| KR100238199B1 (ko) * | 1996-07-30 | 2000-01-15 | 윤종용 | 플레쉬 이이피롬(eeprom) 장치 및 그 제조방법 |
| KR100542947B1 (ko) * | 1998-10-27 | 2006-03-28 | 주식회사 하이닉스반도체 | 플래쉬 메모리 셀 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419372A (en) * | 1977-07-14 | 1979-02-14 | Nec Corp | Production of semiconductor memory |
-
1980
- 1980-01-25 JP JP686680A patent/JPS56104473A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419372A (en) * | 1977-07-14 | 1979-02-14 | Nec Corp | Production of semiconductor memory |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56104473A (en) | 1981-08-20 |
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