JPH0147028B2 - - Google Patents
Info
- Publication number
- JPH0147028B2 JPH0147028B2 JP55020296A JP2029680A JPH0147028B2 JP H0147028 B2 JPH0147028 B2 JP H0147028B2 JP 55020296 A JP55020296 A JP 55020296A JP 2029680 A JP2029680 A JP 2029680A JP H0147028 B2 JPH0147028 B2 JP H0147028B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- photoresist
- layer
- mesa structure
- gaas layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 9
- 230000010355 oscillation Effects 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000007791 liquid phase Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000010420 art technique Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2029680A JPS56116688A (en) | 1980-02-19 | 1980-02-19 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2029680A JPS56116688A (en) | 1980-02-19 | 1980-02-19 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56116688A JPS56116688A (en) | 1981-09-12 |
| JPH0147028B2 true JPH0147028B2 (de) | 1989-10-12 |
Family
ID=12023188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2029680A Granted JPS56116688A (en) | 1980-02-19 | 1980-02-19 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56116688A (de) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4911480A (de) * | 1972-04-25 | 1974-01-31 | ||
| JPS51118395A (en) * | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Semiconductor emitting unit and manufacturing process |
-
1980
- 1980-02-19 JP JP2029680A patent/JPS56116688A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4911480A (de) * | 1972-04-25 | 1974-01-31 | ||
| JPS51118395A (en) * | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Semiconductor emitting unit and manufacturing process |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56116688A (en) | 1981-09-12 |
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