JPH0145699B2 - - Google Patents
Info
- Publication number
- JPH0145699B2 JPH0145699B2 JP57175390A JP17539082A JPH0145699B2 JP H0145699 B2 JPH0145699 B2 JP H0145699B2 JP 57175390 A JP57175390 A JP 57175390A JP 17539082 A JP17539082 A JP 17539082A JP H0145699 B2 JPH0145699 B2 JP H0145699B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- tungsten
- ion source
- ion generating
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 46
- 239000000523 sample Substances 0.000 description 10
- 238000010884 ion-beam technique Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- -1 can be improved Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Tubes For Measurement (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175390A JPS5966031A (ja) | 1982-10-07 | 1982-10-07 | 高輝度表面電離型イオン源およびその製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57175390A JPS5966031A (ja) | 1982-10-07 | 1982-10-07 | 高輝度表面電離型イオン源およびその製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5966031A JPS5966031A (ja) | 1984-04-14 |
| JPH0145699B2 true JPH0145699B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-04 |
Family
ID=15995260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57175390A Granted JPS5966031A (ja) | 1982-10-07 | 1982-10-07 | 高輝度表面電離型イオン源およびその製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5966031A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0646552B2 (ja) * | 1985-09-24 | 1994-06-15 | 株式会社日立製作所 | イオン源装置 |
| US10672602B2 (en) | 2014-10-13 | 2020-06-02 | Arizona Board Of Regents On Behalf Of Arizona State University | Cesium primary ion source for secondary ion mass spectrometer |
| JP6879908B2 (ja) * | 2014-10-13 | 2021-06-02 | アリゾナ ボード オブ リージェンツ ア ボディ コーポレート オブ ザ ステイト オブ アリゾナ アクティング フォー アンド オン ビハーフ オブ アリゾナ ステイト ユニバーシティーＡｒｉｚｏｎａ Ｂｏａｒｄ Ｏｆ Ｒｅｇｅｎｔｓ， Ａ Ｂｏｄｙ Ｃｏｒｐｏｒａｔｅ Ｏｆ Ｔｈｅ Ｓｔａｔｅ Ｏｆ Ａｒｉｚｏｎａ Ａｃｔｉｎｇ Ｆｏｒ Ａｎｄ Ｏｎ Ｂｅｈａｌｆ Ｏｆ Ａｒｉｚｏｎａ Ｓｔａｔｅ Ｕｎｉｖｅｒｓｉｔｙ | 二次イオン質量分析計のためのセシウム一次イオン源 |
-
1982
- 1982-10-07 JP JP57175390A patent/JPS5966031A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5966031A (ja) | 1984-04-14 |
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