JPH0142508B2 - - Google Patents
Info
- Publication number
- JPH0142508B2 JPH0142508B2 JP57097723A JP9772382A JPH0142508B2 JP H0142508 B2 JPH0142508 B2 JP H0142508B2 JP 57097723 A JP57097723 A JP 57097723A JP 9772382 A JP9772382 A JP 9772382A JP H0142508 B2 JPH0142508 B2 JP H0142508B2
- Authority
- JP
- Japan
- Prior art keywords
- optical transmission
- metal tube
- envelope
- metal
- transmission path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 82
- 239000002184 metal Substances 0.000 claims description 82
- 230000003287 optical effect Effects 0.000 claims description 62
- 230000005540 biological transmission Effects 0.000 claims description 53
- 239000012212 insulator Substances 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 1
- 230000008018 melting Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000005394 sealing glass Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/44—Mechanical structures for providing tensile strength and external protection for fibres, e.g. optical transmission cables
- G02B6/4401—Optical cables
- G02B6/4415—Cables for special applications
- G02B6/4427—Pressure resistant cables, e.g. undersea cables
- G02B6/4428—Penetrator systems in pressure-resistant devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
本発明は光駆動半導体装置に係り、特に光信号
導入用の光伝送路が外囲器を貫通する部分の気密
封止に好適な構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optically driven semiconductor device, and particularly to a structure suitable for hermetically sealing a portion where an optical transmission line for introducing an optical signal passes through an envelope.
光駆動半導体装置の１つである光駆動型サイリ
スタは、光信号の照射により順方向阻止状態から
導通状態にスイツチする機能を有する。光駆動型
サイリスタは通常の電気ゲート式サイリスタと比
較して、(1)主回路とゲート回路とを電気的に絶縁
できるため、ゲート回路を簡単にできる、(2)電磁
誘導によるノイズに対して強い、などの利点があ
る。このため、最近これらの利点をもつとも発揮
できる、サイリスタを多数個直列接続して用いる
高圧直流送電変換装置用としての光駆動型サイリ
スタの開発が急速に進んでいる。ここで解決しな
ければならない課題の１つに、光駆動型サイリス
タの外囲器内の受光部へ外囲器外から光信号を導
く光伝送路と外囲器間の気密性の高信頼度化があ
る。第１図及び第２図は光駆動型サイリスタの従
来構造の一例である。光サイリスタ素子２は両側
に介在した電極３を介してアノード外部電極４と
カソード外部電極５にはさまれている。これらの
電極４，５は、金属フランジ６によつて気密に接
続された円筒状の絶縁体７と共に外囲器を構成し
ている。発光素子（図示せず）からの光信号を伝
送してきた光フアイバ束１０は、例えば袋ナツト
１１を用いて、絶縁体７の一部を貫通する金属筒
８に固定された光伝送路９と光学的に結合されて
いる。光伝送路９は光サイリスタ素子の受光部へ
光信号を導くために湾曲している。光導入部Ａに
おける光伝送路９の従来の気密封止法は、２通り
に大別される。第１の方法は、絶縁体７の貫通孔
内面のメタライズ層１２と金属筒８とを金属接着
層１３例えば銀ろう等によつて金属接着し、金属
筒８に光伝送路９を挿入後、低融点封着ガラス等
の気密剤１４を用いて気密封止する方法である。
第２の方法は、光伝送路９と金属筒８を予め低融
点はんだ等の気密剤１４を用いて固定しておき、
さらに融点の低いはんだを用いて金属筒８を絶縁
体７には気密封止する方法である。作業温度の低
い気密剤１４を用いるのは、光伝送路９の光伝送
効率を高めるために開口数が大きく、軟化点が一
般に400℃〜600℃と低いガラスを光伝送路９とし
て採用するためである。第１の方法は、絶縁体７
と金属筒８は銀ろうで接着するため高信頼の気密
封止が可能であるが、その後に気密の信頼性が劣
る光伝送路９と金属筒１４の封着が行なわれるた
め、気密がとれなかつた場合、高価な絶縁体７や
光伝送路９が無駄になる欠点がある。また低融点
封着ガラスを気密剤１４として用いた場合、光伝
送路と金属筒８の封着のために大きな絶縁体７も
ガラス焼成炉に挿入しなければならず作業性が悪
いという欠点がある。第２の方法は、光伝送路９
と金属筒８の封着作業は容易であり、これらの気
密性を予め確認することもできる利点があるが、
絶縁体７と金属筒８を封着する低融点はんだの経
年による酸化で気密性が損われることが懸念され
る。高圧直流送電変換装置に光駆動型サイリスタ
を用いた場合、外囲器の温度は常時60℃〜80℃に
なることが予想される。また10年を越える信頼性
を保障しなければならないので、外気にさらされ
る部分に低融点はんだを用いるのは信頼性に欠け
る。一方、低融点はんだの代わりに銀ろうを用い
ることは光伝送路９の軟化点が低いので不可能で
ある。 A light-driven thyristor, which is one type of light-driven semiconductor device, has a function of switching from a forward blocking state to a conducting state by irradiation with an optical signal. Compared to ordinary electrically gated thyristors, light-driven thyristors (1) can electrically isolate the main circuit and gate circuit, making the gate circuit simpler; and (2) are more resistant to noise caused by electromagnetic induction. It has advantages such as being strong. For this reason, the development of light-driven thyristors for use in high-voltage DC power transmission and conversion devices, which has these advantages and uses a large number of thyristors connected in series, has recently progressed rapidly. One of the issues that must be solved here is high reliability of airtightness between the optical transmission line and the envelope, which guides the optical signal from outside the envelope to the light receiving part inside the envelope of the optically driven thyristor. There is a change. FIGS. 1 and 2 show an example of a conventional structure of a light-driven thyristor. The optical thyristor element 2 is sandwiched between an anode external electrode 4 and a cathode external electrode 5 with electrodes 3 interposed on both sides. These electrodes 4 and 5 constitute an envelope together with a cylindrical insulator 7 which is hermetically connected by a metal flange 6. An optical fiber bundle 10 that has transmitted optical signals from a light emitting element (not shown) is connected to an optical transmission line 9 fixed to a metal tube 8 that penetrates a part of an insulator 7 using, for example, a cap nut 11. Optically coupled. The optical transmission line 9 is curved in order to guide the optical signal to the light receiving part of the optical thyristor element. Conventional hermetic sealing methods for the optical transmission line 9 in the light introduction section A are roughly divided into two types. The first method is to bond the metallized layer 12 on the inner surface of the through hole of the insulator 7 and the metal cylinder 8 with a metal adhesive layer 13, for example, using silver solder, and after inserting the optical transmission path 9 into the metal cylinder 8, This is a method of hermetically sealing using an air sealant 14 such as low melting point sealing glass.
The second method is to fix the optical transmission path 9 and the metal cylinder 8 in advance using an airtight agent 14 such as low melting point solder,
Furthermore, the metal tube 8 is hermetically sealed to the insulator 7 using a solder having a low melting point. The reason why the air sealant 14 with a low working temperature is used is because glass with a large numerical aperture and a low softening point of generally 400°C to 600°C is used as the optical transmission line 9 in order to increase the light transmission efficiency of the optical transmission line 9. It is. The first method is to
Since the metal tube 8 and the metal tube 8 are bonded with silver solder, highly reliable hermetic sealing is possible.However, since the optical transmission line 9 and the metal tube 14 are then sealed with less reliable airtightness, the airtightness cannot be achieved. Otherwise, there is a disadvantage that the expensive insulator 7 and optical transmission line 9 are wasted. Furthermore, when low-melting point sealing glass is used as the airtight agent 14, a large insulator 7 must also be inserted into the glass firing furnace to seal the optical transmission line and the metal tube 8, resulting in poor workability. be. The second method is to
The sealing work of the metal cylinder 8 and the metal tube 8 is easy, and there is an advantage that the airtightness of these can be confirmed in advance.
There is a concern that the low melting point solder that seals the insulator 7 and the metal cylinder 8 may oxidize over time, causing loss of airtightness. When a light-driven thyristor is used in a high-voltage DC power transmission/conversion device, the temperature of the envelope is expected to be between 60°C and 80°C at all times. Furthermore, since reliability must be guaranteed for more than 10 years, using low melting point solder on parts exposed to the outside air lacks reliability. On the other hand, it is impossible to use silver solder instead of low melting point solder because the softening point of the optical transmission line 9 is low.
本発明の目的は、上記した従来技術の欠点をな
くし、気密信頼性が高く、かつ作業性の良い光導
入部構造を有する光駆動半導体装置を提供するこ
とにある。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the above-mentioned conventional techniques and to provide an optically driven semiconductor device having a light introduction part structure with high airtight reliability and good workability.
本発明の特徴とするところは、光伝送路９と光
伝送路９が貫通している外囲器との間に第１及び
第２の金属筒を２重に配置し、第１の金属筒を外
囲器に接着し、第２の金属筒を外囲器内寄りで光
伝送路９に気密に接着し、両金属筒を外囲器外の
端部で溶接し、かつ第１の金属筒が第２の金属筒
の軸方向全体で包囲した点にある。 The present invention is characterized in that first and second metal cylinders are arranged in a double manner between the optical transmission line 9 and the envelope through which the optical transmission line 9 passes, and the first metal cylinder is adhered to the envelope, a second metal cylinder is hermetically adhered to the optical transmission line 9 near the inside of the envelope, both metal cylinders are welded at the end outside the envelope, and the first metal cylinder is This is at a point where the tube surrounds the entire second metal tube in the axial direction.
以下本発明を具体的な実施例により詳細に説明
する。第３図は金属筒が２重になつた本発明によ
る光駆動型サイリスタの光導入部構造の一実施例
を示す。外側金属筒８０１は絶縁体７に貫通孔内
面のメタライズ層１２を介して金属接着層１３例
えば銀ろうで気密に固定されている。また、光伝
送体９は外囲器内寄りで内側金属筒８０２に例え
ば低融点封着ガラス１４で気密に固定されてい
る。外側金属筒８０１は、内側金属筒８０２を軸
方向全体において包囲すると共に両者は外囲器の
外側において例えばレーザ等によつて溶接されて
いる。この光導入部構造では、光伝送体９と内側
金属筒８０２のみをガラス焼成炉に挿入するだけ
でよく作業性が向上する。また、封止られた光伝
送体９と内側金属筒８０２および絶縁体７と外側
金属筒８０１を別々に予め気密性を確めることが
でき、組み立て後の不良率を低減できる利点があ
る。更に、外側金属筒８０１が内側金属筒８０２
を軸方向全体に亘つて包囲しているため、内側金
属筒８０２と光伝送体９との接着個所を組立時の
外力から保護でき、両金属筒の溶接が可能とな
る。更にまた内側金属筒と外側金属筒の溶接は、
第１図に示す金属環６の溶接にも用いられており
信頼性は高く、発熱は部分的にかつ短時間に押え
ることが可能なため低融点封着ガラス等を溶かす
恐れはない。以上のように第３図の構成にすれ
ば、作業性が良く、気密の信頼性が高い光導入部
構造を得ることができる。第４図は、光伝送路９
を光導入部の気密用光伝送路９０１と光伝送路９
０１からの光を光駆動型サイリスタの受光部まで
導く光伝送路９０２に分けた光導入部構造を示す
本発明の他の実施例である。光伝送路９０２は連
結用固定治具８０３と連結環１５を用いて外側金
属筒８０１に連結され、光伝送路９０１と光学的
に接続されている。 The present invention will be explained in detail below using specific examples. FIG. 3 shows an embodiment of the structure of the light introduction part of the light-driven thyristor according to the present invention, in which the metal cylinder is doubled. The outer metal cylinder 801 is airtightly fixed to the insulator 7 via the metallized layer 12 on the inner surface of the through hole with a metal adhesive layer 13, for example, silver solder. Further, the optical transmission body 9 is airtightly fixed to the inner metal cylinder 802 near the inside of the envelope using, for example, a low melting point sealing glass 14. The outer metal tube 801 surrounds the inner metal tube 802 in its entirety in the axial direction, and both are welded by, for example, a laser or the like on the outside of the envelope. With this light introduction structure, it is sufficient to insert only the light transmitting body 9 and the inner metal cylinder 802 into the glass firing furnace, and the workability is improved. Further, the airtightness of the sealed optical transmission body 9 and the inner metal tube 802 and the insulator 7 and the outer metal tube 801 can be checked separately in advance, which has the advantage of reducing the defect rate after assembly. Furthermore, the outer metal tube 801 is connected to the inner metal tube 802.
Since the inner metal tube 802 and the optical transmitter 9 are surrounded in the entire axial direction, the bonding point between the inner metal tube 802 and the optical transmission body 9 can be protected from external force during assembly, and it is possible to weld the two metal tubes together. Furthermore, the welding of the inner metal tube and the outer metal tube,
It is also used for welding the metal ring 6 shown in FIG. 1, and has high reliability. Since the heat generation can be suppressed locally and in a short period of time, there is no risk of melting low melting point sealing glass or the like. With the configuration shown in FIG. 3 as described above, it is possible to obtain a light introducing portion structure that is easy to work with and has high airtight reliability. FIG. 4 shows the optical transmission line 9
The airtight optical transmission line 901 and the optical transmission line 9 of the light introduction part
This is another embodiment of the present invention showing a light introducing section structure in which the light from 01 is divided into optical transmission paths 902 that guide the light to the light receiving section of the optically driven thyristor. The optical transmission line 902 is connected to the outer metal cylinder 801 using a connecting fixture 803 and a connecting ring 15, and is optically connected to the optical transmission line 901.
固定治具８０３は光伝送路９０２に例えば機械
的に押圧することによつて固定されている。連結
環１５はテフロン等からなり、外側金属筒８０１
にはめ込まれている。 The fixing jig 803 is fixed to the optical transmission path 902 by, for example, mechanically pressing it. The connecting ring 15 is made of Teflon or the like, and the outer metal cylinder 801
It's stuck in.
この光導入部構造では、光接続を一箇所増した
ことによる光損失が若干生じるが、内側金属筒８
０２と気密封止する光伝送体をＬ字型の大きな光
伝送路９の代わりに小さな光伝送体９０１を用い
ることができるので、第３図の実施例に比較して
ガラス封着等の作業性が一層向上する利点があ
る。第５図は、外側金属筒８０１、内側金属筒８
０２にそれぞれ溶接用として外側金属リング８１
及び内側金属リング８２を設けた光導入部構造を
示す本発明の別の実施例である。各金属リングは
金属筒を加工する際に一体に設けてもよいが、リ
ング状のものを別に加工しておき、銀ろうまたは
溶接等によつて金属筒に固定してもよい。金属リ
ングを設けたことにより、溶接が不完全で気密性
が損なわれた場合、また作業中に光伝送体９（９
０１）が破損した場合などに、溶接部１００を取
り除くことにより再生が可能となる利点がある。
第６図は、光伝送体９（９０１）と内側金属筒８
０２の気密封着部１４を外側金属筒８０１の内部
に設けた光導入部構造を示す本発明の更に異なる
実施例である。この光導入部構造では気密封着部
１４が外側金属筒８０１で囲まれているため、外
的衝撃に対して保護されているという利点があ
る。 In this light introduction part structure, some light loss occurs due to the addition of one optical connection, but the inner metal tube 8
Since a small optical transmission body 901 can be used instead of the large L-shaped optical transmission line 9 for the optical transmission body to be hermetically sealed with 02, the work such as glass sealing is easier compared to the embodiment shown in FIG. This has the advantage of further improving performance. FIG. 5 shows an outer metal tube 801 and an inner metal tube 8.
Outer metal ring 81 for welding on each of 02
This is another embodiment of the present invention showing a light introducing section structure in which an inner metal ring 82 is provided. Each metal ring may be provided integrally when processing the metal cylinder, but a ring-shaped ring may be processed separately and fixed to the metal cylinder by silver soldering, welding, or the like. By providing a metal ring, if the welding is incomplete and the airtightness is lost, or if the optical transmission body 9 (9
01) is damaged, there is an advantage that it can be regenerated by removing the welded portion 100.
Figure 6 shows the optical transmission body 9 (901) and the inner metal tube 8.
This is a still different embodiment of the present invention showing a light introduction structure in which the airtight sealing portion 14 of 02 is provided inside the outer metal cylinder 801. In this light introducing section structure, since the airtight sealing section 14 is surrounded by the outer metal cylinder 801, there is an advantage that it is protected against external impact.
一方、光伝送体９（９０１）の熱膨張係数９〜
11×10-61／℃と絶縁体７（例えばAl2O3主成分
とするものは6.5〜7.8×10-61／℃）に比べ大き
い。この熱膨張係数の差は気密性を失う原因とな
る。しかし、本発明の光導入部構造を採用し、光
伝送路９（９０１）と内側金属筒８０２及び絶縁
体７と外側金属筒８０１の熱膨張係数を略等しく
すれば気密性が保たれることが分かつた。また、
光伝送路９（９０１）と内側金属筒８０２と外側
金属筒８０１の熱膨張係数を略等しくし、熱膨張
係数の差を絶縁体７と外側金属筒８０１の間に負
荷させることによつても気密性が保たれることが
分かつた。また、絶縁体７と外側金属筒８０１は
銀ろうで、光伝送路９（９０１）と内側金属筒８
０２は低融点封着ガラスで気密に固定する方法が
とくに光導入部の気密性が良好であつた。 On the other hand, the thermal expansion coefficient of the optical transmission body 9 (901) is 9~
It is 11×10 -6 1/°C, which is larger than that of the insulator 7 (for example, 6.5 to 7.8×10 -6 1/°C for those mainly composed of Al 2 O 3 ). This difference in thermal expansion coefficient causes loss of airtightness. However, if the light introduction part structure of the present invention is adopted and the coefficients of thermal expansion of the optical transmission line 9 (901) and the inner metal tube 802 and the insulator 7 and the outer metal tube 801 are made approximately equal, airtightness can be maintained. I understand. Also,
By making the optical transmission line 9 (901), the inner metal cylinder 802, and the outer metal cylinder 801 approximately equal in thermal expansion coefficient, and applying the difference in thermal expansion coefficient between the insulator 7 and the outer metal cylinder 801, It was found that airtightness was maintained. The insulator 7 and the outer metal tube 801 are made of silver solder, and the optical transmission line 9 (901) and the inner metal tube 8
For No. 02, the method of airtightly fixing with low melting point sealing glass had particularly good airtightness at the light introduction part.
本発明によれば、光駆動型半導体装置の光導入
部構造において、光伝送路と内側金属筒及び絶縁
体と外側金属筒をそれぞれ別個に気密封止でき、
それらの金属筒相互を溶接によつて封着するの
で、作業性が良く、信頼性の高い光導入部の気密
が得られる。また、光伝送路と内側金属筒との接
着部が外側金属筒で保護されているので、組立時
の破損を防止できる。 According to the present invention, in the light introducing portion structure of a light-driven semiconductor device, the optical transmission path, the inner metal tube, and the insulator and the outer metal tube can be hermetically sealed separately,
Since these metal cylinders are sealed together by welding, it is possible to obtain airtightness of the light introduction part with good workability and high reliability. Further, since the adhesive portion between the optical transmission path and the inner metal cylinder is protected by the outer metal cylinder, damage during assembly can be prevented.
第１図は従来の光駆動型サイリスタの概略断面
図、第２図は第１図の光導入部の拡大図、第３
図、第４図、第５図及び第６図は本発明の実施例
を示す概略断面図である。
２……光サイリスタ素子、７……絶縁体、８…
…金属筒、９……光伝送路、１２……メタライズ
層、１３……金属接着剤、１４……気密剤、８０
１……外側金属筒、８０２……内側金属筒、９０
１……気密用光伝送路、９０２……内側光伝送
路、８１……外側金属リング、８２……内側金属
リング、１００……溶接部。
Figure 1 is a schematic cross-sectional view of a conventional light-driven thyristor, Figure 2 is an enlarged view of the light introduction part in Figure 1, and Figure 3 is a schematic cross-sectional view of a conventional light-driven thyristor.
4, 5, and 6 are schematic sectional views showing embodiments of the present invention. 2... Optical thyristor element, 7... Insulator, 8...
... Metal cylinder, 9 ... Optical transmission line, 12 ... Metallized layer, 13 ... Metal adhesive, 14 ... Air sealant, 80
1... Outer metal tube, 802... Inner metal tube, 90
DESCRIPTION OF SYMBOLS 1... Airtight optical transmission line, 902... Inner optical transmission line, 81... Outer metal ring, 82... Inner metal ring, 100... Welding part.
Claims (1)
的に接続された１対の外部電極、及び環状でその
両側がそれぞれ外部電極に接続された絶縁体によ
つて形成された半導体素子を気密に封止する外囲
器と、 外囲器を貫通して外囲器外から光信号を半導体
素子まで導く光伝送路と、 外囲器の光伝送路が貫通している部分と光伝送
路との間に配置され、外囲器に金属接着層を介し
て接着された第１の金属筒と、 第１の金属筒と光伝送路との間の１部に配置さ
れ、その外囲器内寄り端部で光伝送路に接着材に
より接着された第２の金属筒と、を具備し、第１
の金属筒と第２の金属筒とが外囲器外の端部にお
いて溶着され、第２の金属筒と光伝送路との接着
個所が、第１の金属筒と第２の金属筒との溶着個
所から光伝送路の軸方向に離れかつ第１の金属筒
により第２の金属筒の軸方向全体が包囲されてい
ることを特徴とする光駆動半導体装置。 ２ 特許請求の範囲第１項において、光伝送路及
び接着材が低融点ガラス、金属接着層が銀ろうで
あることを特徴とする光駆動半導体装置。[Scope of Claims] 1. A semiconductor element operated by an optical signal, a pair of external electrodes provided on both sides of the semiconductor element and electrically connected to the semiconductor element, and a ring-shaped external electrode on both sides, respectively. an envelope that hermetically seals a semiconductor element formed by connected insulators; an optical transmission path that passes through the envelope and guides an optical signal from outside the envelope to the semiconductor element; a first metal cylinder disposed between a portion of the envelope through which the optical transmission line passes and the optical transmission line and adhered to the envelope via a metal adhesive layer; and a first metal cylinder and the optical transmission line. a second metal tube disposed in a portion between the optical transmission path and the optical transmission path at an end closer to the inner side of the envelope, the second metal tube being bonded to the optical transmission path with an adhesive;
The metal tube and the second metal tube are welded at the outer end of the envelope, and the bonding point between the second metal tube and the optical transmission path is the bonding point between the first metal tube and the second metal tube. 1. An optically driven semiconductor device, characterized in that the second metal tube is entirely surrounded in the axial direction by the first metal tube, which is separated from the welding point in the axial direction of the optical transmission path. 2. The optically driven semiconductor device according to claim 1, characterized in that the optical transmission path and adhesive material are low-melting glass, and the metal adhesive layer is silver solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57097723A JPS58215071A (en) | 1982-06-09 | 1982-06-09 | Photo-driven semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57097723A JPS58215071A (en) | 1982-06-09 | 1982-06-09 | Photo-driven semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58215071A JPS58215071A (en) | 1983-12-14 |
| JPH0142508B2 true JPH0142508B2 (en) | 1989-09-13 |
Family
ID=14199805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57097723A Granted JPS58215071A (en) | 1982-06-09 | 1982-06-09 | Photo-driven semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58215071A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0619139U (en) * | 1992-07-29 | 1994-03-11 | ミツミ電機株式会社 | Tape guide and head assembly |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6094770A (en) * | 1983-10-28 | 1985-05-27 | Mitsubishi Electric Corp | Light-trigger thyristor and manufacture thereof |
| JPS60157256A (en) * | 1984-01-25 | 1985-08-17 | Mitsubishi Electric Corp | Photo trigger thyristor |
| US5970194A (en) * | 1998-02-19 | 1999-10-19 | Uniphase Telecommunications Products, Inc. | Optical fiber having hermetically sealable section |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55166972A (en) * | 1979-06-13 | 1980-12-26 | Mitsubishi Electric Corp | Light semiconductor device |
-
1982
- 1982-06-09 JP JP57097723A patent/JPS58215071A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55166972A (en) * | 1979-06-13 | 1980-12-26 | Mitsubishi Electric Corp | Light semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0619139U (en) * | 1992-07-29 | 1994-03-11 | ミツミ電機株式会社 | Tape guide and head assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58215071A (en) | 1983-12-14 |
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