JPH03219675A - Light-drive semiconductor device - Google Patents

Abstract

PURPOSE:To enable an adhesion axis length to be produced uniformly over the entire periphery and strength reliability of a light-introduction part to be improved by adhering an inner surface of a metal cylinder and a light- transmission path for achieving a specified uniform adhesion force. CONSTITUTION:A second metal cylinder 101 is formed by previously determining the range of an axis length l1 of an adhesion part 102 for adhering and fixing the second metal cylinder and a light-transmission path 4 with an adhesive 7 such as a low melting-point sealing glass and by making an inner diameter of the second metal cylinder 101 of this part to be smaller than that of other parts. On the other hand, regarding a non-adhesion part 103 which does not enable the second metal cylinder 101 and the light-transmission path 4 to be adhered, the inner diameter of the second metal cylinder 101 is formed larger than a part of the adhesion part 102. Adhesion between the second metal cylinder 101 and the light-transmission path 4 is performed by uniform flow of molten sealing glass to a small part at a gap between the second metal cylinder 101 and the light-transmission path 4 due to capillary phenomenon. Then, the melted sealed glass does not flow into a part with a larger gap due to the surface tension.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention provides an optical transmission line for introducing optical signals inside a metal tube that penetrates an insulating envelope and is metallized to the envelope. The present invention relates to an optically driven semiconductor device configured to be inserted, and more particularly to an optically driven semiconductor device in which the strength and reliability of the portion where the inner surface of the metal tube and the outer surface of the optical transmission path are adhesively sealed is improved.

[Prior Art] For example, a light-driven thyristor is known as one of the light-driven semiconductor devices. A light-driven thyristor has a function of switching the thyristor from a forward blocking state to a conducting state by irradiation with an optical signal. In addition, compared to ordinary electric gate thyristors, the light-driven thyristor can electrically isolate the main circuit and the gate circuit, so the configuration of the gate circuit can be simplified.
It has advantages such as being resistant to noise caused by electromagnetic induction.

For this reason, in recent years, the development and practical use of optically driven thyristors has been progressing. However, with conventional optically driven thyristors, one problem that must be solved is that the optical transmission line that guides the optical signal from outside the envelope to the light receiving part in the insulated envelope of the optically driven thyristor must be insulated. There is an increase in reliability regarding the airtightness between the product and the envelope.

Hereinafter, an example of a light-driven thyristor according to the above-mentioned prior art will be explained with reference to the drawings.

FIG. 7 is a sectional view showing the structure of the prior art, and FIG. 8 is an enlarged sectional view of the main part. In FIGS. 7 and 8, l is a first metal tube, 2 is a second metal tube, 3 is a connecting tube, 4 is an optical transmission line, 5 is an insulating envelope, 6 is a metal adhesive layer, and 7 8 is an adhesive, 8 is an adhesive part, 10 is a cathode external electrode, 11 is an anode external electrode, 12 is a thyristor element, 14 is a cathode side buffer plate, and 18 to 20 are metal flanges.

As shown in FIG. 7, the conventional light-driven thyristor includes a cathode external electrode 10 on the cathode side of the thyristor element 12 via a cathode-side buffer plate 14, and an anode external electrode on the other side of the thyristor element 12. It has a basic structure with 11. Then, the picture body part electrode 10
．． 11 is a cylindrical insulating envelope 5 disposed around it.
are airtightly connected by metal flanges 18 to 20 to form an airtight structure with respect to the thyristor element 12.

The insulating envelope 5 is provided with a first metal tube l passing through the envelope 5, and inside the first metal tube 1, a second metal tube 2 and a second metal tube l are provided. A cylindrical body is inserted into a portion of the second metal tube 2 whose external dimensions are partially reduced, and the connecting tube 3 is welded thereto. The first metal tube l and the connecting tube 3 are hermetically sealed by a welded portion 15. An optical transmission path 4 is fixed and penetrates inside the second metal tube 2, and optical signals are coupled between the inside and outside of the hermetically sealed semiconductor device through the optical transmission path 4. are doing. The optical transmission line 4 is curved inside the semiconductor device in order to guide the optical signal to the light receiving part of the optical thyristor element 12.
The end surface outside the insulating envelope 5 serves as a light introduction end.

In the optical semiconductor device configured as described above, hermetic sealing of the structure in which the optical transmission line 4 is introduced from the outside of the device into the inside of the device is performed as follows.

That is, the first metal cylinder 1 is airtightly fixed to the inner surface of a through hole provided in the insulating envelope 5 via the metallized layer 21 with a metal adhesive layer 6, such as silver solder.

Further, the second metal cylinder 2 has an external dimension on the optical signal introduction side.
It is finished small in advance, and the connecting tube 3 is inserted into this small external dimension up to the specified length dimension, and the second metal tube 2 and the connecting tube 3 are connected to each other in the middle of the length of the second metal tube 2. They are airtightly fixed at the joints via connecting welds 17 made of silver solder or the like.

The second metal tube 2 and the connecting tube 3 integrated in this way
An optical transmission line 4 passes through the inner diameter side of the second metal cylinder 2, and the optical transmission line 4 is formed between the inner surface of the second metal tube 2 and the outer surface of the optical transmission line 4.
They are fixed with an adhesive 7 such as low-melting point sealing glass, thereby airtightly sealing the second metal tube 2 and the optical transmission path 4.

The structure of the light introduction part in the optical semiconductor device as described above can be manufactured by inserting a structure including the optical transmission line 4, the second metal tube 2, and the connecting tube 3 into a glass firing furnace. Insert the structure inside the first metal cylinder 1, and
By welding the end faces of the metal cylinder l and the connecting cylinder 3 by welding s15, it is possible to form an optical semiconductor device in which the internal semiconductor element 12 is made airtight. Therefore, the optical semiconductor device according to the prior art described above has the advantage that it can be assembled efficiently with good workability.

Note that in the above-mentioned conventional technology, the inside side of the optical transmission line that guides the optical signal to the light receiving part of the semiconductor element 12 inside the semiconductor device is arranged in advance from the light receiving part to the vicinity of the end surface of the first metal cylinder 1. , the end face of this optical transmission line is a structure including the optical transmission line 4, the second metal cylinder 2, and the connecting cylinder 3 described above.
When inserted into the metal tube 1 of the structure, the optical transmission line 4 on the side of the structure
An optical signal can be introduced into the semiconductor device through this abutting portion.

As a conventional technique related to the above-mentioned optically driven semiconductor device, for example, a technique described in Japanese Patent Application Laid-Open No. 58-215071 is known.

[Problems to be Solved by the Invention] The above-mentioned conventional technology has problems with the bonding part 8 when the optical transmission line 4 is airtightly bonded to the inside of the second metal tube 2 with a low melting point sealing glass 7 or the like. However, sufficient consideration has not been given to this, and there is a problem in the strength of this part against thermal stress.

That is, in the prior art, the optical transmission line 4 is inserted inside the second metal cylinder 2, these are placed in a glass firing furnace, and the optical transmission line 4 is inserted inside the second metal cylinder 2 using low-melting glass. 7, the molten glass 7 may flow in the axial direction into the gap between the second metal tube 2 and the optical transmission line 4, which causes the bonded portion 8 to become uneven in the axial direction. Therefore, there is a problem in that the thermal stress in this part becomes non-uniform and the bending strength in this part decreases, thereby reducing the reliability of the semiconductor device.

The purpose of the present invention is to solve the problems of the prior art and to solve the problems of the prior art.
The length of the glass seal between the metal cylinder 2 and the optical transmission line 4 is made uniform in both the circumferential and axial directions so that the length is axially symmetrical, and the bending strength due to thermal stress in this part is reduced. The object of the present invention is to solve the problems and provide a light-driven semiconductor device having a highly reliable light introduction structure.

[Means for Solving the Problems] According to the present invention, the object is to penetrate the optical transmission line 4 inside the second metal cylinder 2 and bond them with an adhesive 7 such as low melting point sealing glass. Regarding the structure, the axial length Ω for bonding the two
The relative dimensional difference D*-D H between the inner diameter dimension D2 of the second metal tube 2 and the outer diameter dimension DH of the optical transmission line 4, which is in the range of , is made smaller than other parts, and the low melting point sealing glass is of,
The flow into this gap is facilitated by capillary phenomenon, etc., and the relative relationship between the inner diameter D2 of the second metal cylinder 2 outside the range of the axial length Ω1 to be bonded and the outer diameter DH of the optical transmission line 4 is made. By making the dimensional difference D*-Ds larger than the axial length Q, the molten low melting point sealing glass is stopped at a small gap due to surface tension and is prevented from flowing into this area. achieved.

[Function] The inner diameter dimension of the second metal tube 2 and the outer diameter dimension D of the optical transmission line 4 at the part where the second metal tube 2 and the optical transmission line 4 are bonded together.
By making the relative dimensional difference Da DH with H smaller than other parts, it is possible to bond both parts only in this part.

According to the present invention, it is thereby possible to obtain a uniform bonded part with an axial length of Ω1, and also to prevent the molten glass of personnel from flowing into the large gap. Therefore, it is possible to prevent the inside of the second metal tube 2 and the optical transmission path 4 from adhering at this portion.

[Example] Hereinafter, an example of the optically driven semiconductor device according to the present invention will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional view showing the structure of a first embodiment of the present invention, FIG. 2 is an enlarged cross-sectional view of the main part thereof, and FIGS. 3 and 4 are cross-sectional views of the light introducing section before assembly. In FIGS. 1 to 4, 101 is a second metal tube, 102 is a bonded portion, and 103 is a non-bonded portion, and other symbols are the same as in FIGS. 7 and 8.

The first embodiment of the present invention is characterized in that the second metal tube 101 has two different inner diameters, as shown in FIGS. 2 and 4.

That is, the second metal cylinder 101 according to the present invention has an axial length Q of the adhesive part 102 that adhesively fixes the second metal cylinder 101 and the optical transmission path 4 with the adhesive 7 such as low melting point sealing glass. A range is determined in advance, and the second metal cylinder 101 is formed so that the inner diameter of this part is smaller than that of other parts. Therefore, the gap between the inner surface of the second metal cylinder 101 and the optical transmission path 4 in this part is smaller than that in the other non-adhesive parts 103, and the adhesive 7 such as molten sealing glass is , it becomes easier to flow in due to capillary action, etc.

On the other hand, in the non-bonded part 103 where the second metal cylinder 101 and the optical transmission path 4 are not bonded, the inner diameter of the second metal cylinder 101 is larger than that of the bonded part 102. As a result, the axial length range of the non-bonded portion 103 is
The relative size difference between the inner surface of the adhesive part 1 and the optical transmission line 4 is
02, and the molten sealing glass does not flow into the gap created by this, and the second metal cylinder 101 and the optical transmission path 4 are not bonded together in this gap.

That is, in the bonding between the second metal cylinder 101 and the optical transmission line 4 according to the present invention, the molten seal is bonded to the small gap between the second metal cylinder 101 and the optical transmission line 4 by capillary action. This is done by flowing evenly. Then, for the part with the large gap, the molten sealing glass is
The surface tension prevents it from flowing in, and even if it does, the gap between the two members is so large that the two members will not be adhesively fixed in this area.

The low melting point sealing glass used as the adhesive 7 described above has a coefficient of thermal expansion close to that of the glass constituting the optical transmission path 4.

In the first embodiment of the present invention described above, the adhesive part 102
The gap due to the difference between the inner diameter of the second metal cylinder 101 and the outer diameter of the optical transmission line 4 is assumed to be small enough in the above-mentioned embodiment to allow the molten sealing glass to flow in due to capillary action, but it should not be made that small. It is not necessary, and it is sufficient if it is smaller than the gap between the non-bonded parts.

According to the first embodiment of the present invention described above, as shown in FIG. It can be made uniformly, and as a result, it is possible to obtain a structure of the light introduction part with high reliability in the strength of the glass sealing part against thermal stress.

Note that the structure of the light introduction part created as shown in FIG. The first metal tube 1 is inserted into the inside of the metal tube 1, and the end surface of the first metal tube 1 and the end surface of the connecting tube 3 are hermetically sealed by the welding part 15.
assembled into a light-driven semiconductor device.

FIG. 5 is a sectional view showing the structure of a second embodiment of the present invention. In FIG. 5, 16 is a reservoir, and other symbols are the same as in FIGS. 1 to 4.

The structure of the light introduction part according to the second embodiment of the present invention is as follows:
A rectangular reservoir 16 is provided in the inner diameter part of a portion of the second metal cylinder 101 in the axial direction, and further, as in the case of the first embodiment of the present invention described above, the second metal cylinder 101 The range of the axial length Q of the adhesive part 102 for adhesively fixing the optical transmission path 4 and the optical transmission line 4 with the adhesive 7 such as low melting point sealing glass is determined in advance, and the inner diameter of the second metal cylinder 101 in this part is determined in advance. is formed so that it is smaller than the reservoir.

Such a second embodiment of the present invention has a second metal cylinder lo
t and the optical transmission path 4 are fixed with low-melting point sealing glass or the like, the adhesive portion 102 can be made into a predetermined uniform axially long island, and the same effect as in the first embodiment of the present invention described above can be obtained. can be played.

FIG. 6 is a sectional view showing the structure of a third embodiment of the present invention. In FIG. 6, 104 is a gap, and other symbols are the same as in FIGS. 1 to 4.

In the third embodiment of the present invention, a relatively large portion in the axial direction of the adhesive portion 102 that seals and fixes the second metal cylinder 101 and the optical transmission line 4 with a low-melting point sealing glass or the like is provided. A shorter and smaller gap 104 is configured.

In this third embodiment of the present invention, the molten sealing glass is
The sealing glass flows into the aforementioned small gap 104 by capillary action, and its surface tension prevents the sealing glass from flowing out of the small gap 104, so that the axial length Ω is uniform in the axial direction.

The adhesive portion 102 can be obtained, and the same effects as in the first and second embodiments of the present invention described above can be achieved.

[Effects of the Invention] As explained above, according to the present invention, an optically driven semiconductor device is provided. The optical transmission line that introduces optical signals from the outside is
It can be airtightly bonded to the inner diameter side of the metal cylinder in an axially symmetrical manner, and the length of the bonding axis can be made uniform all around the circumference, so the bending moment due to thermal stress will not act on the glass sealing part. It is possible to improve the strength and reliability of the light introducing section.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the structure of the first embodiment of the present invention, FIG. 2 is an enlarged sectional view of the main part thereof, FIGS. 6 is a sectional view showing the structure of the third embodiment of the present invention, FIG. 7 is a sectional view showing the structure of the prior art, and FIG. FIG. 8 is an enlarged sectional view of the main part. l...First metal cylinder, 2, lOl...
Second metal tube, 3... Connection tube, 4...
Optical transmission line, 5...Insulating envelope, 6...
Metal adhesive layer, 7...Adhesive, 8...Adhesive part, 10...Cathode external electrode, 11...
... Anode external electrode, 12 ... Thyristor element, 14 ... Cathode side buffer plate, 16 ...
...Reservoir, 18-20...Metal flange,
102...Adhesive part, 103...Non-adhesive part, 104...Gap part. Figure 6 Figure 2 Ivy 4 Figure 5 Figure 02 Figure 0 8 Figure

Claims (1)

[Claims] 1. A semiconductor element operated by an optical signal, an insulating envelope that hermetically seals the semiconductor element, and an optical transmission line that is bonded to penetrate the envelope and pass an optical transmission line inside it. What is claimed is: 1. An optically driven semiconductor device comprising a metal cylinder, wherein the inner surface of the metal cylinder and an optical transmission path are bonded to each other so as to have a predetermined uniform adhesive length. 2. The optically driven semiconductor device according to claim 1, wherein the inner diameter of the inner surface of the metal tube is smaller at a portion bonded to the optical transmission path than at other portions. 3. The metal tube is formed with a reservoir portion on its inner surface adjacent to the portion to be bonded to the optical transmission path, the inner diameter of which is larger than the portion to be bonded. The optically driven semiconductor device according to item 1 or 2. 4. The metal cylinder has a part of the axial length of the inner surface of the part to be bonded to the optical transmission line, which has a part where the gap due to the dimensional difference between the inner diameter dimension and the outer diameter dimension of the optical transmission line becomes extremely small. The optically driven semiconductor device according to claim 1 or 2, characterized in that the device is formed by: 5. The inner surface of the metal cylinder and the optical transmission line are bonded together using an adhesive having a coefficient of thermal expansion that is substantially the same as that of the optical transmission line. The optically driven semiconductor device according to item 1 of item 4.