JPH07118532B2 - Light-driven semiconductor device - Google Patents

Light-driven semiconductor device

Info

Publication number
JPH07118532B2
JPH07118532B2 JP61061119A JP6111986A JPH07118532B2 JP H07118532 B2 JPH07118532 B2 JP H07118532B2 JP 61061119 A JP61061119 A JP 61061119A JP 6111986 A JP6111986 A JP 6111986A JP H07118532 B2 JPH07118532 B2 JP H07118532B2
Authority
JP
Japan
Prior art keywords
light
light receiving
light guide
optical
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61061119A
Other languages
Japanese (ja)
Other versions
JPS62217663A (en
Inventor
秀雄 松田
良昭 角田
隆 久保田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61061119A priority Critical patent/JPH07118532B2/en
Publication of JPS62217663A publication Critical patent/JPS62217663A/en
Publication of JPH07118532B2 publication Critical patent/JPH07118532B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thyristors (AREA)

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は、光トリガサイリスタ等の光駆動型半導体装置
に係り、特に信頼性の高い外囲器の気密封止構造を有
し、直流送電、無効電力補償装置等の高電圧変換装置に
使用する光駆動型半導体装置に関するものである。
The present invention relates to an optically driven semiconductor device such as an optical trigger thyristor, and more particularly to a highly reliable hermetically sealing structure for an envelope. The present invention relates to an optically driven semiconductor device used for a high voltage conversion device such as a DC power transmission device and a reactive power compensation device.

(従来の技術) 電力用又は電気機器用装置の制御素子としてサイリスタ
等の半導体装置が広く使用せられる。
(Prior Art) A semiconductor device such as a thyristor is widely used as a control element of a device for electric power or electric equipment.

このうち光トリガサイリスタのごとき光駆動形半導体装
置は、光信号をライトガイドを用いて伝送し、伝送した
光信号により半導体装置の動作を制御するものであり、
主回路と制御信号発生回路との電気絶縁性がすぐれてい
るなどの利点があるため、特に直流送電、無効電力補償
装置等の高電圧変換装置に使用されている。第4図は代
表的な光トリガサイリスタの例であって、光信号導入方
向が主電流の通電方向とほぼ90度の角度をなすものの断
面図である。1はサイリスタのpnpn層が形成されている
半導体素子でそのn層側主面はアルミ電極3を介して銅
電極2で圧接され、p層側主面はろう材4と熱緩衝板5
を介して銅電極2′で圧接される。銅電極2よりカソー
ド、銅電極2′よりアノードがそれぞれ導出されてい
る。
Among these, an optical drive type semiconductor device such as an optical trigger thyristor transmits an optical signal using a light guide and controls the operation of the semiconductor device by the transmitted optical signal.
Since it has advantages such as excellent electrical insulation between the main circuit and the control signal generation circuit, it is particularly used for high voltage converters such as DC power transmission and reactive power compensators. FIG. 4 is a cross-sectional view of an example of a typical optical trigger thyristor in which an optical signal introducing direction forms an angle of about 90 degrees with a main current conducting direction. Reference numeral 1 is a semiconductor element in which a pnpn layer of a thyristor is formed, and its n-layer side main surface is pressure-welded with a copper electrode 2 via an aluminum electrode 3, and the p-layer side main surface is a brazing material 4 and a thermal buffer plate 5.
It is pressure-welded with the copper electrode 2'through. A cathode is led out from the copper electrode 2 and an anode is led out from the copper electrode 2 '.

カソード側の主面のほぼ中央の受光部6に信号光が印加
される。印加する信号光を導くための内部ライトガイド
7には光ファイバーが使用され、その一端の端面7aは素
子1の受光部6(6aは位置合せ治具である)に対向して
配置され、そこから内部ライトガイド7が銅電極2に沿
い半導体主面と平行に外囲器8の側面に向って延在し、
内部ライトガイド7の他端7bは外囲器8の周側面に貫設
された開口部9の中を通り、端面7bが外囲器8に設けた
光学的透過体10(受光窓10ともいう)に対向して位置す
るように配置される。第5図は開口部9付近の部分拡大
断面図である。光学的透過体10は、金属部材11,12によ
って気密に封止されている。
Signal light is applied to the light receiving portion 6 at the center of the main surface on the cathode side. An optical fiber is used for the internal light guide 7 for guiding the signal light to be applied, and one end face 7a thereof is arranged to face the light receiving portion 6 (6a is a positioning jig) of the element 1, and from there An internal light guide 7 extends along the copper electrode 2 parallel to the semiconductor main surface toward the side surface of the envelope 8,
The other end 7b of the inner light guide 7 passes through an opening 9 penetrating the peripheral side surface of the envelope 8, and the end face 7b is an optical transmissive body 10 (also referred to as a light receiving window 10) provided in the envelope 8. ) Is arranged so as to face. FIG. 5 is a partially enlarged sectional view of the vicinity of the opening 9. The optical transmissive body 10 is hermetically sealed by the metal members 11 and 12.

このような光駆動型半導体装置では、光学的透過板10か
ら入光した光の一部が、内部ライトガイド7内に受光さ
れず、内部ライトガイド7と金属部材11との間隙を通っ
て漏れてしまう。このため、光の結合(伝送)効率を向
上できない問題があった。
In such a light-driven semiconductor device, a part of the light entering from the optical transmission plate 10 is not received in the internal light guide 7 and leaks through the gap between the internal light guide 7 and the metal member 11. Will end up. Therefore, there is a problem that the light coupling (transmission) efficiency cannot be improved.

(発明が解決しようとする問題点) 本発明は、光の結合効率の向上を図った光駆動型半導体
装置を提供することをその目的とするものである。
(Problems to be Solved by the Invention) An object of the present invention is to provide a light-driven semiconductor device in which light coupling efficiency is improved.

〔発明の構成〕[Structure of Invention]

(問題点を解決するための手段) 本発明は、光信号で駆動する半導体素子と、該半導体素
子の受光部に光を導くライトガイドと、該ライトガイド
の受光端部に対向して光学的透過体を有し、該ライトガ
イド及び前記半導体素子を気密に収容する外囲器とを具
備する光駆動型半導体装置において、ライトガイドの受
光領域と光学的透過体とを光が漏れない状態で光反射筒
にて直結したことを特徴とする光駆動型半導体装置であ
る。
(Means for Solving Problems) The present invention is directed to a semiconductor element driven by an optical signal, a light guide for guiding light to a light receiving portion of the semiconductor element, and an optical element facing the light receiving end portion of the light guide. In a light-driven semiconductor device having a light guide and an envelope that hermetically accommodates the light guide and the semiconductor element, in a state in which light does not leak between the light receiving region of the light guide and the optically transparent body. It is an optical drive type semiconductor device characterized by being directly connected by a light reflection tube.

ここで、光反射筒としては、ライトガイドと外囲器との
間に存在する金属部材を光学的透過体方向に延出して形
成しても良いし、或は光学的透過体を保持している金属
部材の光学的透過体とライトガイドの受光領域間の部分
の肉厚を大きくして形成しても良い。或は、ライトガイ
ドの受光領域近傍の周囲を囲むようにして端部が光学的
透過体に向って延出した筒体を設けて光反射筒としても
良い。
Here, the light reflecting cylinder may be formed by extending a metal member existing between the light guide and the envelope in the direction of the optical transmitting body, or by holding the optical transmitting body. It may be formed by increasing the thickness of the portion between the optically transparent body of the metal member and the light receiving area of the light guide. Alternatively, a light reflecting tube may be provided by providing a tube body that surrounds the vicinity of the light receiving area of the light guide and has an end portion extending toward the optically transparent body.

(作用) 本発明に係る光駆動型半導体装置によれば、ライトガイ
ドの受光領域と光学的透過体との間に光が漏れない状態
で光反射筒が設けられているので、光学的透過体から入
光した光を効率良くライトガイドに供給し、光の結合光
率を高めることができる。
(Operation) According to the optically driven semiconductor device of the present invention, since the light reflecting tube is provided between the light receiving region of the light guide and the optically transparent body in a state in which light does not leak, the optically transparent body is provided. It is possible to efficiently supply the light entering from the light guide to the light guide and increase the light coupling efficiency.

(実施例) 以下、本発明の実施例について図面を参照して説明す
る。第1図は、本発明の一実施例の要部の説明図であ
る。なお、第4図及び第5図で示した従来のものと同一
部分については同一符号を付し、また、同一部分の構成
の説明は従来例のものをもって代用する。第1図に示す
如く、外囲器8を貫挿して一端部が外部に導出した内部
ライトガイド7は、外囲器8と内部ライトガイド7間に
存在する金属部材11で囲まれている。金属部材11の一端
部は、内部ライトガイド7の受光領域20に対設された光
学的透過体10の近傍まで延出し、光反射筒21を構成して
いる。光学的透過体10は、外囲器8の外面に取付けられ
た金属部材12に固定されている。
(Example) Hereinafter, the Example of this invention is described with reference to drawings. FIG. 1 is an explanatory diagram of a main part of an embodiment of the present invention. The same parts as those of the conventional one shown in FIGS. 4 and 5 are designated by the same reference numerals, and the description of the structure of the same part will be replaced with that of the conventional example. As shown in FIG. 1, the inner light guide 7 which is inserted through the outer envelope 8 and has one end led out to the outside is surrounded by a metal member 11 existing between the outer envelope 8 and the inner light guide 7. One end of the metal member 11 extends to the vicinity of the optical transmissive body 10 opposite to the light receiving region 20 of the internal light guide 7 to form a light reflecting cylinder 21. The optical transmission body 10 is fixed to a metal member 12 attached to the outer surface of the envelope 8.

このように構成された光駆動型半導体装置30によれば、
内部ライトガイド7と光学的透過体10との間に光反射筒
21が設けられ、受光領域20と光学的透過体10との間で光
が漏れず、効果的に受光領域20に導かれるようになって
いる。このため、光の結合効率を向上させることができ
る。
According to the light-driven semiconductor device 30 configured as above,
A light reflection tube between the internal light guide 7 and the optical transmission body 10.
21 is provided so that light does not leak between the light receiving region 20 and the optical transmission body 10 and is effectively guided to the light receiving region 20. Therefore, the light coupling efficiency can be improved.

なお、本発明の他の実施例として第2図に示す如く、光
学的透廻体10を保持している金属部材12の光学的透過体
10と受光領域20間の部分の肉厚を光が漏れない程度に大
きくして光反射筒22を構成するようにしても良い。ま
た、第3図に示す如く、内部ライトガイド7の受光領域
近傍の周囲を囲むようにすると共に、端部を光学的透過
体10に向って延出させて光反射筒23を形成した筒体24を
設けたものとしても良い。なお、第3図中25は、筒体24
の他方の端部を固定するO−リングである。
In addition, as another embodiment of the present invention, as shown in FIG. 2, an optical transmissive body of a metal member 12 holding an optical transmissive body 10.
The light reflecting cylinder 22 may be configured by increasing the thickness of the portion between the light receiving region 20 and the light receiving region 20 so that light does not leak. Further, as shown in FIG. 3, the inner light guide 7 surrounds the vicinity of the light receiving area, and the end of the inner light guide 7 is extended toward the optically transparent body 10 to form the light reflecting cylinder 23. 24 may be provided. Incidentally, 25 in FIG. 3 is a cylindrical body 24.
Is an O-ring that fixes the other end of the.

〔発明の効果〕〔The invention's effect〕

以上説明した如く、本発明に係る光駆動型半導体装置に
よれば、光の結合効率を向上させることができるもので
ある。
As described above, the light-driven semiconductor device according to the present invention can improve the light coupling efficiency.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本発明の一実施例の要部の説明図、第2図及
び第3図は、本発明の他の実施例の要部の説明図、第4
図は、従来の光駆動型半導体装置の概略構成を示す説明
図、第5図は、同従来の半導体装置の要部の説明図であ
る。 1…半導体素子、2,2′…銅電極、6…受光部、7…内
部ライトガイド、8…外囲器、9…開口部、10…光学的
透過体(受光窓)、11,12…金属部材、20…受光領域、2
1,22,23…光反射筒、24…筒体、25…Oリング、30,31,3
2…光駆動型半導体装置。
FIG. 1 is an explanatory view of a main part of an embodiment of the present invention, FIGS. 2 and 3 are explanatory views of a main part of another embodiment of the present invention, and FIG.
FIG. 5 is an explanatory diagram showing a schematic configuration of a conventional light-driven semiconductor device, and FIG. 5 is an explanatory diagram of a main part of the conventional semiconductor device. DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 2, 2 '... Copper electrode, 6 ... Light receiving part, 7 ... Internal light guide, 8 ... Envelope, 9 ... Opening part, 10 ... Optical transmissive body (light receiving window), 11, 12 ... Metal member, 20 ... Light receiving area, 2
1,22,23 ... Light reflecting cylinder, 24 ... Cylinder, 25 ... O-ring, 30,31,3
2 ... Optical drive type semiconductor device.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 久保田 隆 神奈川県川崎市幸区小向東芝町1番地 株 式会社東芝多摩川工場内 (56)参考文献 特開 昭59−34662(JP,A) 特開 昭61−141410(JP,A) 特開 昭54−9952(JP,A) 実開 昭56−53371(JP,U) 実開 昭61−85813(JP,U) 実開 昭61−206906(JP,U) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Kubota No. 1 Komukai Toshiba-cho, Kouki-ku, Kawasaki-shi, Kanagawa Inside the Tama River Factory, Toshiba Corporation (56) Reference JP-A-59-34662 (JP, A) Kai 61-141410 (JP, A) Unexamined Japanese Patent Sho 54-9952 (JP, A) Actual Sho 56-53371 (JP, U) Actual Sho 61-85813 (JP, U) Actual Sho 61-206906 ( JP, U)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】光信号で駆動する半導体素子と、該半導体
素子を気密に収容する外囲器と、該外囲器の壁に設けら
れた貫通孔と、光放出端面が前記半導体素子の受光部に
配置され且つ受光端面近傍が前記貫通孔を通して外囲器
の外に突出するように配置された光ファイバーからなる
ライトガイドと、該ライトガイドの突出部を囲んで延出
し且つ前記貫通孔の周囲に気密に固定された受光部保護
のための金属製筒状体と、該金属製筒状体の開放端に気
密に固定され且つ前記ライトガイドの受光端面に対面し
て配置された光学的透過体からなる受光窓とを具備し、
該受光窓を通して外部から供給される光駆動信号を前記
ライトガイドを通して前記半導体素子の受光部に導く光
駆動型半導体装置において、 前記受光部保護のための金属製筒状体の内側に、前記ラ
イトガイドの突出部を囲み且つライトガイドの受光端面
を越えて前記光学的透過体まで延設された光反射筒を設
け、該光反射筒の内部表面を充分な光反射が得られるよ
うに表面仕上げすることにより、前記受光窓から入射し
た光信号を効率良くライトガイドの受光端面に供給する
にようにしたことを特徴とする光駆動型半導体装置。
1. A semiconductor element driven by an optical signal, an envelope for hermetically housing the semiconductor element, a through hole provided in a wall of the envelope, and a light emitting end face of the semiconductor element for receiving light. And a light guide formed of an optical fiber arranged so that the vicinity of the light receiving end surface thereof projects through the through hole to the outside of the envelope, and extends around the projecting portion of the light guide and surrounds the through hole. A metal cylindrical body for airtightly fixed to the light-receiving part, and an optical transmission fixed to the open end of the metal cylindrical body airtightly and facing the light-receiving end face of the light guide. And a light receiving window made of a body,
In a light driven semiconductor device for guiding a light driving signal supplied from the outside through the light receiving window to the light receiving portion of the semiconductor element through the light guide, the light is provided inside the metal tubular body for protecting the light receiving portion. A light reflecting tube is provided which surrounds the protruding part of the guide and extends beyond the light receiving end surface of the light guide to the optical transmitting body, and the inner surface of the light reflecting tube is surface-finished so as to obtain sufficient light reflection. By so doing, the optical drive type semiconductor device characterized in that the optical signal incident from the light receiving window is efficiently supplied to the light receiving end face of the light guide.
JP61061119A 1986-03-19 1986-03-19 Light-driven semiconductor device Expired - Fee Related JPH07118532B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61061119A JPH07118532B2 (en) 1986-03-19 1986-03-19 Light-driven semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61061119A JPH07118532B2 (en) 1986-03-19 1986-03-19 Light-driven semiconductor device

Publications (2)

Publication Number Publication Date
JPS62217663A JPS62217663A (en) 1987-09-25
JPH07118532B2 true JPH07118532B2 (en) 1995-12-18

Family

ID=13161866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61061119A Expired - Fee Related JPH07118532B2 (en) 1986-03-19 1986-03-19 Light-driven semiconductor device

Country Status (1)

Country Link
JP (1) JPH07118532B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5653371U (en) * 1979-10-01 1981-05-11
JPS5934662A (en) * 1982-08-23 1984-02-25 Hitachi Ltd Photo direct ignition thyristor

Also Published As

Publication number Publication date
JPS62217663A (en) 1987-09-25

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