JPH0142148B2 - - Google Patents

Info

Publication number
JPH0142148B2
JPH0142148B2 JP55186682A JP18668280A JPH0142148B2 JP H0142148 B2 JPH0142148 B2 JP H0142148B2 JP 55186682 A JP55186682 A JP 55186682A JP 18668280 A JP18668280 A JP 18668280A JP H0142148 B2 JPH0142148 B2 JP H0142148B2
Authority
JP
Japan
Prior art keywords
compound semiconductor
niobium
diode
super shot
super
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55186682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57111068A (en
Inventor
Yoshikazu Takano
Yoshinobu Sugyama
Terue Kataoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP55186682A priority Critical patent/JPS57111068A/ja
Publication of JPS57111068A publication Critical patent/JPS57111068A/ja
Publication of JPH0142148B2 publication Critical patent/JPH0142148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/60Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP55186682A 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof Granted JPS57111068A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55186682A JPS57111068A (en) 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55186682A JPS57111068A (en) 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57111068A JPS57111068A (en) 1982-07-10
JPH0142148B2 true JPH0142148B2 (enrdf_load_stackoverflow) 1989-09-11

Family

ID=16192789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55186682A Granted JPS57111068A (en) 1980-12-27 1980-12-27 Super schottky diode and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57111068A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2627623B2 (ja) * 1987-10-07 1997-07-09 キヤノン株式会社 電子放出素子
JP4639061B2 (ja) 2004-07-29 2011-02-23 株式会社マキタ 電動工具
FR3039338B1 (fr) * 2015-07-24 2018-12-07 Moteurs Leroy-Somer Machine electrique tournante a refroidissement ameliore

Also Published As

Publication number Publication date
JPS57111068A (en) 1982-07-10

Similar Documents

Publication Publication Date Title
US5481119A (en) Superconducting weak-link bridge
JPS58200586A (ja) ニオブ−絶縁体−ニオブのジヨセフソンのトンネル接合デバイスのその場製造の方法
US5981443A (en) Method of manufacturing a high temperature superconducting Josephson device
EP0421889B1 (en) Method for forming a continuous oxide superconductor layer having different thickness portions for superconductor device
EP0752161B1 (en) Superconductive junction
US5446016A (en) Method for forming a patterned oxide superconductor thin film
JPS5998573A (ja) 超伝導ジヨセフソン接合素子用のトンネル障壁作製法
EP0538077B1 (en) Super conducting quantum interference device
JPH0444438B2 (enrdf_load_stackoverflow)
CA2025800C (en) Silver metal electrode on oxide superconductor
RU2133525C1 (ru) Сверхпроводящий квантовый интерференционный датчик и способ его изготовления
JPH0142148B2 (enrdf_load_stackoverflow)
JP3568547B2 (ja) ジョセフソン接合構造体
US4264916A (en) Semiconductor barrier Josephson junction
US5721196A (en) Stacked tunneling and stepped grain boundary Josephson junction
EP0597663B1 (en) Process of producing a Josephson junction
EP0381541B1 (en) Superconductive magnetoresistive device
JPS5846197B2 (ja) ジヨセフソン接合素子とその製造方法
JP3267353B2 (ja) サブミクロン面積のエッジ接合を利用した弱接合型ジョセフソン素子の製造方法
JP4027504B2 (ja) 積層構造を持つ単電子トンネル素子及びその製造方法
KR100267974B1 (ko) 고온초전도에스엔에스(sns)조셉슨접합소자의제조방법
JPS58147183A (ja) ジヨセフソン集積回路の製造方法
JPH0666480B2 (ja) ジヨセフソン接合素子
KR960014974B1 (ko) 초전도양자 간섭형 디바이스 및 그 제조방법
KR960006753B1 (ko) 서브미크론 면적의 에지접합을 이용한 약접합형 조셉손 소자의 제조방법