JPH0142130B2 - - Google Patents
Info
- Publication number
- JPH0142130B2 JPH0142130B2 JP62088717A JP8871787A JPH0142130B2 JP H0142130 B2 JPH0142130 B2 JP H0142130B2 JP 62088717 A JP62088717 A JP 62088717A JP 8871787 A JP8871787 A JP 8871787A JP H0142130 B2 JPH0142130 B2 JP H0142130B2
- Authority
- JP
- Japan
- Prior art keywords
- light shielding
- light
- reticle
- pattern
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 20
- 238000005286 illumination Methods 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 description 13
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Projection-Type Copiers In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は投影露光装置、特に半導体製造分野で
レチクル（フオトマスク）に形成されているパタ
ーンをウエハに投影露光する装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a projection exposure apparatus, and particularly to an apparatus for projecting and exposing a pattern formed on a reticle (photomask) onto a wafer in the field of semiconductor manufacturing.
半導体素子（例えばIC，LSI，VLSI等）の製
造過程では、レチクル（フオトマスク）に形成さ
れている微細なパターンを半導体ウエハにウエハ
上に欠陥を発生させることなく正確に投影露光す
ることが要求される。このような投影露光を可能
にする装置の一例としては、例えばステツパと呼
ばれる投影露光装置が知られている。ステツパは
レチクル上の１〜数個のマスクパターンを所定の
縮小率でウエハ上に投影し、ステツプアンドリピ
ート（繰り返し）露光によりウエハ全面にパター
ンを配列して焼付けている。
In the manufacturing process of semiconductor devices (e.g. IC, LSI, VLSI, etc.), it is required to accurately project and expose a fine pattern formed on a reticle (photomask) onto a semiconductor wafer without causing defects on the wafer. Ru. As an example of an apparatus that enables such projection exposure, a projection exposure apparatus called a stepper is known. A stepper projects one to several mask patterns on a reticle onto a wafer at a predetermined reduction ratio, and uses step-and-repeat exposure to array and print the patterns over the entire surface of the wafer.
ところで、レチクル（フオトマスク）のパター
ン部以外の領域には焼付け光が透過しないように
クローム等が蒸着されている。これはパターン部
以外の領域を焼付け光が通過し、この焼付け光が
ウエハを露光すると、ウエハ上のパターン部に何
等かの欠陥が発生する恐れがあるからである。特
に、ステツパではパターン部以外の領域を通過し
てきた焼付け光はウエハ上で隣接して投影焼付け
されるパターンに有害な露光を与えることにな
り、そのパターンに重大な欠陥を発生させてしま
う。しかし、レチクルの蒸着面にはピンホールや
何等かの損傷がある場合がある。
By the way, chrome or the like is deposited on areas other than the pattern portion of the reticle (photomask) so that the printing light does not pass therethrough. This is because if the printing light passes through a region other than the pattern area and the wafer is exposed to this baking light, some kind of defect may occur in the pattern area on the wafer. Particularly, in a stepper, the printing light that has passed through areas other than the pattern area will give harmful exposure to the adjacent pattern projected and printed on the wafer, causing serious defects in the pattern. However, there may be pinholes or other damage on the evaporation surface of the reticle.
このため、従来より、ウエハ上に有害な焼付け
光が到達しないように焼付け光の照明光路中に遮
光手段を設けることが提案されていはいるが、実
用的に充分なものではなかつた。 For this reason, it has been proposed in the past to provide a light shielding means in the illumination optical path of the printing light to prevent the harmful printing light from reaching the wafer, but this has not been sufficient for practical use.
本発明はこのような事情に鑑みなされたもの
で、その目的は例えばレチクルのような第１物体
に形成されているパターンを例えばウエハのよう
な第２物体に正確に、且つ欠陥を発生させること
なく投影露光することのできる投影露光装置を提
供することにある。 The present invention was made in view of the above circumstances, and its purpose is to accurately transfer a pattern formed on a first object such as a reticle to a second object such as a wafer, and to cause defects to occur. An object of the present invention is to provide a projection exposure apparatus that can perform projection exposure without any problems.
この目的を達成するために、本発明は、第１物
体に形成されているパターンを第２物体に投影す
る投影露光装置において、前記第１物体を照明す
る照明光の光路中に該照明光を部分的に遮光する
ために設けた遮光手段と、該遮光手段の開口部と
前記パターンの位置を光学的に共役関係にするた
めに前記遮光手段と前記第１物体の間に設けた結
像光学系と、前記第１物体の厚さに応じて前記遮
光手段を前記結像光学系の光軸方向に移動させる
駆動手段とを有することを特徴とする。
In order to achieve this object, the present invention provides a projection exposure apparatus that projects a pattern formed on a first object onto a second object, in which illumination light is inserted into the optical path of the illumination light that illuminates the first object. a light shielding means provided for partially shielding light; and an imaging optical system provided between the light shielding means and the first object in order to establish an optically conjugate relationship between the opening of the light shielding means and the position of the pattern. and a driving means for moving the light shielding means in the optical axis direction of the imaging optical system according to the thickness of the first object.
以下、本発明を図示の実施例に基づいて詳細に
説明する。
Hereinafter, the present invention will be explained in detail based on illustrated embodiments.
第１図は本発明の投影露光装置（例えばステツ
パ）の照明系の一例を示すもので、この照明系に
よりレチクル２２の下側の面Ｂに形成された回路
用パターン２２ａが焼付け光で照明される。な
お、この図では示していないが、レチクル２２の
下方には順に縮小投影レンズとウエハが配置され
ている。 FIG. 1 shows an example of an illumination system of a projection exposure apparatus (for example, a stepper) according to the present invention. With this illumination system, a circuit pattern 22a formed on the lower surface B of a reticle 22 is illuminated with printing light. Ru. Although not shown in this figure, a reduction projection lens and a wafer are arranged below the reticle 22 in this order.
超高圧水銀灯などの光源１１の近傍には光源１
１から放射された光束を有効に集光するための楕
円鏡１２が配置され、次いで光路に沿つて順に、
赤外光の大部分を透過し紫外光を反射するための
コールドミラー１３、光束の配光特性を均一にす
るためのインテグレータ１４、反射鏡１５、コン
デンサレンズ１６、反射鏡１７、遮光装置１８、
コンデンサレンズ１９、反射鏡２０、コンデンサ
レンズ２１、レチクル２２が配置されている。反
射鏡１５，１７，２０はそれぞれ光軸を直角に折
曲げて照明系を小型化するためのものであり、コ
ンデンサレンズ１６は光源１１からの光を集光し
て、遮光装置１８の遮光面Ａを均一に照明するた
めのものである。 There is a light source 1 near the light source 11 such as an ultra-high pressure mercury lamp.
An elliptical mirror 12 is arranged to effectively condense the luminous flux emitted from 1, and then along the optical path,
A cold mirror 13 for transmitting most of the infrared light and reflecting the ultraviolet light, an integrator 14 for making the distribution characteristics of the luminous flux uniform, a reflecting mirror 15, a condenser lens 16, a reflecting mirror 17, a light shielding device 18,
A condenser lens 19, a reflecting mirror 20, a condenser lens 21, and a reticle 22 are arranged. The reflecting mirrors 15, 17, and 20 are for bending the optical axis at right angles to downsize the illumination system, and the condenser lens 16 condenses the light from the light source 11 and serves as the light shielding surface of the light shielding device 18. This is for uniformly illuminating A.
第３図は遮光装置１８の斜視図である。この遮
光装置１８は第１図に示すごとくコンデンサレン
ズ１９，２１（結像光学系）により、その遮光す
る面Ａがレチクル２２のパターン面Ｂと共役な関
係になるように配置されている。また、遮光装置
１８は不図示の遮光装置駆動機構（駆動手段）に
より、レチクル２２の回路用パターン部２２ａ、
もしくはレチクル２２の下方に配置されている露
光を受けるウエハ（不図示）との回転方向の位置
合わせのために、レチクル２２の回転に連動して
第２図ａに矢印で示す回転θ方向に回動可能であ
り、更にレチクル２２を他のガラス等の透明部の
厚さが異なるレチクルに取替え、屈折力が変化し
た場合に、上記の共役な関係を維持するために、
第１図に矢印で示す光軸方向に移動可能である。 FIG. 3 is a perspective view of the light blocking device 18. As shown in FIG. 1, this light shielding device 18 is arranged using condenser lenses 19 and 21 (imaging optical system) such that its light shielding surface A is in a conjugate relationship with the pattern surface B of the reticle 22. In addition, the light shielding device 18 is driven by a light shielding device driving mechanism (driving means) not shown, so that the circuit pattern portion 22a of the reticle 22,
Alternatively, in order to align the rotational direction with a wafer to be exposed (not shown) placed below the reticle 22, the rotation is rotated in the rotation θ direction shown by the arrow in FIG. 2a in conjunction with the rotation of the reticle 22. Furthermore, in order to maintain the above conjugate relationship when the reticle 22 is replaced with a reticle made of another glass or the like with a different thickness of the transparent part and the refractive power changes,
It is movable in the direction of the optical axis indicated by the arrow in FIG.
第３図に戻つて遮光装置１８の構成を説明する
と、基板３０上には、モータ３１、モータ３１の
回転軸にそれぞれ固定されて回転可能な送りネジ
部３２、モータ３１及び送りネジ部３２の回転に
より所定方向（図示矢印方向）に移動可能な送り
ナツト部３３、及び送りナツト部３３上に固定さ
れ、かつ鋭利な側縁部（エツジ）３４ａを有する
遮光板３４がそれぞれ４組配置され、４個の側縁
部３４ａにより矩形の開口部３５を構成する。こ
の開口部３５の面は遮光装置１８の遮光面Ａと同
一面上にある。なお、第３図からも明らかな如
く、４枚の遮光板３４のうち第１及び第２遮光板
の移動方向と第３及び第４遮光板の移動方向はそ
れぞれ同じであるが、第１及び第２遮光板の移動
方向に対する第３及び第４遮光板の移動方向は異
なつている。また、第１及び第２遮光板に対して
第３及び第４遮光板は同一面側に配置されてい
る。４つのモータ３１は各遮光板３４ごとに独立
して設けられている。 Returning to FIG. 3 and explaining the configuration of the light shielding device 18, on the board 30 are a motor 31, a feed screw portion 32 which is fixed to the rotation shaft of the motor 31 and rotatable, and a motor 31 and a feed screw portion 32, which are rotatable. Four sets of a feed nut portion 33 that is movable in a predetermined direction (in the direction of the arrow shown in the figure) by rotation, and a light shielding plate 34 fixed on the feed nut portion 33 and having sharp side edges (edges) 34a are arranged, A rectangular opening 35 is formed by the four side edges 34a. The surface of this opening 35 is on the same plane as the light shielding surface A of the light shielding device 18. As is clear from FIG. 3, among the four light shielding plates 34, the moving direction of the first and second light shielding plates and the moving direction of the third and fourth light shielding plates are the same, respectively; The moving directions of the third and fourth light shielding plates are different from the moving direction of the second light shielding plate. Moreover, the third and fourth light shielding plates are arranged on the same side as the first and second light shielding plates. Four motors 31 are provided independently for each light shielding plate 34.
第１図において、光源１１より放射された光束
は、光学素子１２，１３，１４，１５，１６，１
７の順に反射、屈折し、遮光装置１８の面Ａを均
一に照明する。遮光装置１８の開口部３５の外側
に照射された光束は、４つの遮光板３４によりけ
られ、開口部３５を通過した光束は、第１図にお
いて点線で示す如く、レチクル２２のパターン面
Ｂを照明する。ここで遮光装置１８の遮光面Ａと
レチクル２２のパターン面Ｂとは、光学的に共役
な関係に配置されているので、遮光装置１８の開
口部３５の縁部は、第２図ｂに点線で示すように
パターン面Ｂ上に鮮明な輪郭で投影され、レチク
ル２２の回路用パターン部２２ａの外側の領域を
完全に遮光することができる。 In FIG. 1, the light beam emitted from the light source 11 is transmitted through optical elements 12, 13, 14, 15, 16, 1
It is reflected and refracted in the order of 7, and uniformly illuminates the surface A of the light shielding device 18. The light beam irradiated to the outside of the aperture 35 of the light shielding device 18 is blocked by the four light shielding plates 34, and the light beam that has passed through the aperture 35 hits the pattern surface B of the reticle 22, as shown by the dotted line in FIG. illuminate. Here, since the light shielding surface A of the light shielding device 18 and the pattern surface B of the reticle 22 are arranged in an optically conjugate relationship, the edge of the opening 35 of the light shielding device 18 is indicated by the dotted line in FIG. As shown, the light is projected onto the pattern surface B with a clear outline, and the area outside the circuit pattern portion 22a of the reticle 22 can be completely shielded from light.
更に、遮光装置１８の開口部３５の領域及び位
置は、この照明系が装備される投影露光装置、例
えばステツパの電子処理部から、レチクル２２の
大きさにより出される信号により４つのモータ３
１のそれぞれが所定の回転をし、各モータ３１の
軸に連結されている４つの送りネジ３２により４
つの送りナツト３３がそれぞれ所定方向に移動
し、従つて４つの遮光板３４のそれぞれが各モー
タ３１によつて該信号に応じた位置へ移動するこ
とにより、光軸と直角方向に変化することができ
る。このような４枚の遮光板３４の移動、調整は
各遮光板３４ごとに設けられているモータ３１に
よつて同時に行うことも可能である。 Furthermore, the area and position of the aperture 35 of the light shielding device 18 are controlled by the four motors 3 based on signals output from the electronic processing unit of a projection exposure device, such as a stepper, equipped with this illumination system, depending on the size of the reticle 22.
Each of the motors 1 rotates at a predetermined rate, and is driven by four feed screws 32 connected to the shaft of each motor 31.
The four feed nuts 33 each move in a predetermined direction, and each of the four light shielding plates 34 is moved by each motor 31 to a position according to the signal, so that the change in the direction perpendicular to the optical axis is prevented. can. Such movement and adjustment of the four light shielding plates 34 can also be performed simultaneously by the motor 31 provided for each light shielding plate 34.
これらにより、レチクル２２の回路用パターン
部２２ａの領域に合致した照明が可能となる。即
ち、照明系の有効照射範囲内で、電気的処理によ
り、レチクル２２に対する遮光の寸法、形状、位
置を無段階に選択することができる。また、第４
図ａに示す如く、遮光装置１８に凹形等の異なる
形状の遮光板３４ｂを２枚取り付けたり、或い
は、第４図ｂに示す如く、４枚の遮光板３４の外
に同様な遮光板３４ｃを新たに附加すれば、レチ
クル２２の矩形でない回路用パターンも投影露光
することができる。この照明系を装備したステツ
パでは、焼付を行うに際し、レチクル２２内に回
路パターンとテストパターンを混在させ、回路パ
ターンの焼付を行う時にはテストパターン部を遮
光して回路パターン部だけに焼付光を照射し、逆
にテストパターンの焼付を行う時には回路パター
ン部を遮光してテストパターン部だけに焼付光を
与えることも可能となる。 These enable illumination that matches the area of the circuit pattern portion 22a of the reticle 22. That is, within the effective irradiation range of the illumination system, the size, shape, and position of light shielding for the reticle 22 can be selected steplessly by electrical processing. Also, the fourth
As shown in Figure a, two light shielding plates 34b of different shapes such as concave shapes are attached to the light shielding device 18, or as shown in Figure 4b, a similar light shielding plate 34c is attached in addition to the four light shielding plates 34. By adding a new feature, a non-rectangular circuit pattern on the reticle 22 can also be projected and exposed. In a stepper equipped with this illumination system, when printing, the circuit pattern and the test pattern are mixed in the reticle 22, and when printing the circuit pattern, the test pattern area is shielded from light and only the circuit pattern area is irradiated with printing light. Conversely, when printing a test pattern, it is also possible to shield the circuit pattern portion from light and apply the printing light only to the test pattern portion.
第５図ａ，ｂは第３図の遮光装置１８の遮光板
３４と同様な目的の遮光板１を有する投影露光装
置（例えばステツパ）の概略構成を示している。
これらの図において、２はレチクル、３はレチク
ルステージ、４は投影レンズ、５はウエハであ
り、遮光板１はレチクル２に形成された回路用パ
ターン２ａの損傷を防止するために、第５図ａで
はレチクル２の上側で光軸方向にａ、また、第５
図ｂではレチクル２の下側で光軸方向にｂの距離
をおいて配置されている。従つて、遮光板１はレ
チクル２のパターン２ａをウエハ５に焼付けるた
めの光の照明光路をけらないようにするために、
第５図ａではパターン２ａの領域からｃ、また、
第５図ｂではパターン２ａの領域からｄの距離だ
けその先端１ａが離れるようにセツトすることが
必要となつている。 5a and 5b schematically show the construction of a projection exposure apparatus (for example, a stepper) having a light shielding plate 1 having the same purpose as the light shielding plate 34 of the light shielding device 18 in FIG.
In these figures, 2 is a reticle, 3 is a reticle stage, 4 is a projection lens, and 5 is a wafer.A light shielding plate 1 is used to prevent damage to a circuit pattern 2a formed on the reticle 2. a, above the reticle 2 in the optical axis direction, and the fifth
In FIG. b, they are arranged below the reticle 2 at a distance b in the optical axis direction. Therefore, in order to prevent the light shielding plate 1 from eclipsing the illumination optical path of the light for printing the pattern 2a of the reticle 2 onto the wafer 5,
In FIG. 5a, from the area of pattern 2a to c, and
In FIG. 5b, it is necessary to set the tip 1a away from the area of the pattern 2a by a distance d.
以上の如く、本発明によれば、照明系の照明範
囲（遮光範囲）を決定する遮光手段を照明光路の
光軸方向にも移動可能とし、第１物体の厚みが変
化するような場合にも遮光手段の遮光面と第１物
体のパターン面の光学的な共役関係を維持可能と
しているので、余分な焼付け光に影響されること
なく、例えばレチクルのような第１物体に形成さ
れているパターンを例えばウエハのような第２物
体に正確に、且つ欠陥が発生することなく投影露
光することができる。
As described above, according to the present invention, the light shielding means that determines the illumination range (shading range) of the illumination system can also be moved in the optical axis direction of the illumination optical path, and even when the thickness of the first object changes. Since it is possible to maintain an optically conjugate relationship between the light shielding surface of the light shielding means and the pattern surface of the first object, the pattern formed on the first object, such as a reticle, can be printed without being affected by excess printing light. can be projected onto a second object, such as a wafer, accurately and without defects.
第１図は本発明の投影露光装置の一実施例の要
部を示す図、第２図ａ，ｂは本実施例の遮光装
置、レチクルの端面をそれぞれ示す図、第３図は
遮光装置を詳細に示す斜視図、第４図ａ，ｂは遮
光装置の変形例を示す図、第５図ａ，ｂはそれぞ
れ遮光装置を有する投影露光装置の例を示す図で
ある。
１８……遮光装置、２２……レチクル、３４…
…遮光板、３５……開口部、Ａ……遮光面、Ｂ…
…レチクルの回路用パターン面。
FIG. 1 is a diagram showing the main parts of an embodiment of the projection exposure apparatus of the present invention, FIGS. 2a and 2b are diagrams showing the light shielding device and the end face of the reticle of this embodiment, respectively, and FIG. 3 is a diagram showing the light shielding device of the present embodiment. 4A and 4B are diagrams showing a modified example of the light shielding device, and FIGS. 5A and 5B are diagrams each showing an example of a projection exposure apparatus having the light shielding device. 18... Light blocking device, 22... Reticle, 34...
... Light-shielding plate, 35... Opening, A... Light-shielding surface, B...
...The circuit pattern side of the reticle.
Claims (1)
体に投影する投影露光装置において、前記第１物
体を照明する照明光の光路中に該照明光を部分的
に遮光するために設けた遮光手段と、該遮光手段
の開口部と前記パターンの位置を光学的に共役関
係にするために前記遮光手段と前記第１物体の間
に設けた結像光学系と、前記第１物体の厚さに応
じて前記遮光手段を前記結像光学系の光軸方向に
移動させる駆動手段とを有することを特徴とする
投影露光装置。1. In a projection exposure apparatus that projects a pattern formed on a first object onto a second object, a light shielding means provided in the optical path of the illumination light illuminating the first object to partially shield the illumination light. and an imaging optical system provided between the light shielding means and the first object in order to establish an optically conjugate relationship between the opening of the light shielding means and the position of the pattern, and a thickness of the first object. A projection exposure apparatus comprising: drive means for moving the light shielding means in the optical axis direction of the imaging optical system accordingly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62088717A JPS6323318A (en) | 1987-04-13 | 1987-04-13 | Projection exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62088717A JPS6323318A (en) | 1987-04-13 | 1987-04-13 | Projection exposure device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58152474A Division JPS6045252A (en) | 1983-08-23 | 1983-08-23 | Illuminating system of projecting and exposing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6323318A JPS6323318A (en) | 1988-01-30 |
| JPH0142130B2 true JPH0142130B2 (en) | 1989-09-11 |
Family
ID=13950655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62088717A Granted JPS6323318A (en) | 1987-04-13 | 1987-04-13 | Projection exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6323318A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0439281U (en) * | 1990-08-01 | 1992-04-02 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5393371A (en) * | 1977-01-28 | 1978-08-16 | Hitachi Ltd | Device for drawing scan pattern |
| JPS5433425U (en) * | 1977-08-06 | 1979-03-05 | ||
| JPS55129333A (en) * | 1979-03-28 | 1980-10-07 | Hitachi Ltd | Scale-down projection aligner and mask used for this |
| JPS55132039A (en) * | 1979-04-02 | 1980-10-14 | Mitsubishi Electric Corp | Forming method for repeated figure |
| JPS56105635A (en) * | 1980-01-18 | 1981-08-22 | Optimetrix Corp | Front surface illuminator for semiconductor wafer |
| JPS5843518A (en) * | 1981-09-09 | 1983-03-14 | Nec Corp | Projecting and exposing device |
| JPS5845533B2 (en) * | 1978-01-23 | 1983-10-11 | 三豊特殊工事株式会社 | Grab bucket for underground continuous wall excavation |
| US4422755A (en) * | 1980-01-18 | 1983-12-27 | Optimetrix Corporation | Frontal illumination system for semiconductive wafers |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5845533U (en) * | 1981-09-24 | 1983-03-26 | 株式会社日立製作所 | Illuminance distribution measuring device |
-
1987
- 1987-04-13 JP JP62088717A patent/JPS6323318A/en active Granted
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5393371A (en) * | 1977-01-28 | 1978-08-16 | Hitachi Ltd | Device for drawing scan pattern |
| JPS5433425U (en) * | 1977-08-06 | 1979-03-05 | ||
| JPS5845533B2 (en) * | 1978-01-23 | 1983-10-11 | 三豊特殊工事株式会社 | Grab bucket for underground continuous wall excavation |
| JPS55129333A (en) * | 1979-03-28 | 1980-10-07 | Hitachi Ltd | Scale-down projection aligner and mask used for this |
| JPS55132039A (en) * | 1979-04-02 | 1980-10-14 | Mitsubishi Electric Corp | Forming method for repeated figure |
| JPS56105635A (en) * | 1980-01-18 | 1981-08-22 | Optimetrix Corp | Front surface illuminator for semiconductor wafer |
| US4422755A (en) * | 1980-01-18 | 1983-12-27 | Optimetrix Corporation | Frontal illumination system for semiconductive wafers |
| JPS5843518A (en) * | 1981-09-09 | 1983-03-14 | Nec Corp | Projecting and exposing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6323318A (en) | 1988-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0429212B2 (en) | ||
| US3853398A (en) | Mask pattern printing device | |
| JPH03211813A (en) | Exposure aligner | |
| JP2866243B2 (en) | Projection exposure apparatus and method of manufacturing semiconductor device | |
| JP2006019702A5 (en) | ||
| JPH07161617A (en) | Scanning-type aligner | |
| JPS60232552A (en) | Lighting optical system | |
| JPH0883753A (en) | Focal point detecting method | |
| JPH07201723A (en) | Aligning method and device | |
| EP1443361A2 (en) | Projection exposure mask, projection exposure apparatus, and projection exposure method | |
| JPH06118623A (en) | Reticle and semiconductor aligner using the same | |
| JP2697014B2 (en) | Exposure apparatus and exposure method | |
| KR940000496B1 (en) | Projecting and exposing device | |
| JPH0142129B2 (en) | ||
| US5459003A (en) | Exposure method for forming sloping sidewalls in photoresists | |
| JPH0142130B2 (en) | ||
| JP3209294B2 (en) | Exposure equipment | |
| JP2000294500A (en) | Peripheral exposure device and the method | |
| TW201433826A (en) | Illumination optical system, exposure device, and method for manufacturing device | |
| JPS6323319A (en) | Methofd for projection exposure | |
| US4577957A (en) | Bore-sighted step-and-repeat projection alignment and exposure system | |
| JP2588725B2 (en) | Aperture mechanism of projection exposure equipment | |
| JPH05326365A (en) | Projection aligner | |
| JPH0323900B2 (en) | ||
| JP3974231B2 (en) | Exposure equipment |