JP3209294B2 - Exposure equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of synchronizing scanning of a mask and a photosensitive substrate with respect to an illuminated area such as a rectangle or an arc so that a pattern having a larger area than the illuminated area on the mask can be obtained. The present invention relates to a so-called slit scan exposure type exposure apparatus that exposes light upward.

[0002]

2. Description of the Related Art Conventionally, when a semiconductor device, a liquid crystal display device, a thin film magnetic head, or the like is manufactured by using photolithography technology, a photomask or a reticle (hereinafter, referred to as a "reticle") has been used.
A projection exposure apparatus that exposes a pattern of a “reticle” to a photosensitive substrate such as a wafer or a glass plate coated with a photoresist or the like via a projection optical system is used. Recently, one chip pattern or the like of a semiconductor element has been increasing in size, and a projection exposure apparatus is required to have a large area for exposing a pattern having a larger area on a reticle onto a photosensitive substrate.

In order to respond to such a large area, a reticle and a photosensitive substrate are scanned synchronously with respect to an illumination area such as a rectangle, an arc, or a hexagon (this is referred to as a "slit illumination area"). Accordingly, a projection exposure apparatus of a so-called slit scan exposure system for exposing a pattern having an area larger than that of the slit-shaped illumination area on a reticle onto a photosensitive substrate has been developed. Conventionally, in order to set the slit-shaped illumination area on the reticle, a movable light-blocking means for determining the slit-shaped illumination area has been arranged at a position substantially conjugate with the reticle or near the reticle.

[0004]

The above prior arts have the following two major disadvantages.
Generally, an illumination optical system of a projection exposure apparatus is designed to illuminate a reticle with illumination light (exposure light) having uniform illuminance. Therefore, in the projection exposure apparatus of the slit scan exposure method, when the exposure is completed by scanning the reticle and the photosensitive substrate with respect to the slit-shaped illumination area, in order to obtain good illuminance uniformity on the photosensitive substrate. The width of the slit-shaped illumination area in the scanning direction must be sufficiently uniform.

[0005] Assuming that the scanning direction for the slit-shaped illumination area is the X direction and the non-scanning direction perpendicular to the scanning direction is the Y direction, if the width of the slit-shaped illumination area in the scanning direction is not uniform, As shown in FIG. 5A, the case where the parallelism of the slit-shaped illumination area 30 in the scanning direction is poor,
As shown in FIG. 6A, there may be a case where the slit-shaped illumination area 31 has irregularities at the edge in the scanning direction. FIG.
In the case of (a), the distribution of the exposure amount E in the non-scanning direction (Y direction) obtained on the photosensitive substrate is such that it gradually increases or decreases in the Y direction as shown in FIG. on the other hand,
The distribution of the exposure amount E in the non-scanning direction (Y direction) obtained on the photosensitive substrate in the case of FIG. 6A is such that it varies irregularly in the Y direction as shown in FIG. Become.

[0006] In this regard, current projection exposure apparatuses are also used in the sub-half micron region where the design rule is less than 0.5 µm. It is said that the uniformity of the exposure required for line width control in such an area reaches ± 1%. Therefore, in order to obtain sufficient illuminance uniformity in the projection exposure apparatus of the slit scan exposure system, the illumination area setting means for determining the slit-shaped illumination area requires less unevenness of the edge portion in the scanning direction. Is required, and when the width in the scanning direction is changed, it is required to perform movable control while keeping the edges in the scanning direction sufficiently parallel. Therefore, if the illumination area setting means for determining the slit-shaped illumination area is variably controlled in synchronization with scanning for the reason described later, the operation of the illumination area setting means is controlled with required accuracy. There is a first inconvenience that it is difficult to perform this.

[0007] Further, as shown in FIG.
Assuming that two circuit pattern regions 32A and 32B are formed side by side with a light-shielding portion having a width L1 in the scanning direction, the reticle R is scanned with respect to a slit-shaped illumination region 33 having a width L2 in the scanning direction. think of. Also,
It is assumed that the width L2 of the slit-shaped illumination region 33 is larger than the width L1 of the light shielding portion separating the circuit pattern regions 32A and 32B. In this case, for example, when only the pattern of the first circuit pattern region 32A of the reticle R is to be exposed on the photosensitive substrate by the slit scan exposure method, a part of the pattern of the second circuit pattern region 32B is also transferred onto the photosensitive substrate. There was a second inconvenience of being done.

In order to avoid this, the width L1 of the light-shielding portion on the reticle R may be made sufficiently large, but this will reduce the area of the circuit pattern area for transfer. Immediately before the exposure of the circuit pattern area 32A is completed, the width L2 of the slit-shaped illumination area 33 may be reduced by the operation of the illumination area setting means in synchronization with the scanning. The mechanism becomes complicated.

In view of the above, the present invention exposes a pattern having a larger area than the illumination area on the reticle onto the photosensitive substrate by synchronously scanning the reticle and the photosensitive substrate with respect to the slit-shaped illumination area. In the exposure apparatus of the slit scan exposure method, the illumination area setting means for determining the slit illumination area can be arranged at a position away from the reticle, and the width of the slit illumination area can be changed during exposure. It is another object of the present invention to transfer only a pattern in a desired pattern area among a plurality of pattern areas on a reticle onto a photosensitive substrate.

[0010]

According to a first exposure apparatus of the present invention, a mask (R) is provided for a slit-like illumination area.
By scanning in synchronization with the sensitive substrate (photosensitive substrate (W)), a mask having an area larger than the slit-shaped illumination area is obtained .
In an exposure apparatus for exposing a pattern on a mask (R) onto a sensitive substrate (W) , a rectangular slit-shaped
Illumination optical system (1-7) for setting the illumination area and its rectangle
Mask (R) and sensitive substrate for slit-shaped illumination area
Move mask (R) to scan in synchronization with (W)
First relative scanning means (9, 10) and its rectangular slit
Mask (R) and sensitive substrate (W)
The sensitive substrate (W) to scan in synchronization with
A second relative scanning means (14, 15) and a mask (R)
And is moved in synchronization with the scanning of the mask (R).
Of the illumination light guided to the rectangular slit-shaped illumination area.
A light-shielding member that covers an area on the mask (R) where irradiation is to be avoided
(8A, 8B) .

In this case, the first relative scanning means (9, 10)
It is desirable that the light-shielding members (8A, 8B) also be used for movement.
Good. Further, the above-mentioned illumination optical system is moved from the mask (R).
The illumination area is provided in a rectangular slit shape.
It is desirable to include an illumination area setting means (6) for setting .

Next, a second exposure apparatus according to the present invention comprises:
Mask (R) and sensitive substrate (W) for the illumination area of
By scanning in synchronization, the illumination area can be
A pattern on a mask (R) with a large area is responsive to a substrate (W)
In an exposure apparatus that exposes light upward, illumination on a mask (R)
Illumination area setting means for setting an area in a slit shape (6)
Between the illumination area setting means (6) and the mask (R).
Placed telecentric relay lens system (7)
And

[0013]

According to the present invention, the slit-shaped illumination area on the mask (R) is, for example, the mask (R) in the illumination optical system (1 to 7) arranged at a position away from the mask (R). R) is determined by the illumination area setting means (6) conjugate with R). Since the illumination area setting means (6) is located at a position distant from the mask (R), the illumination area setting means (6) can be precisely manufactured or adjusted in advance, and the sensitive substrate (W) after scanning can be manufactured. The above illuminance uniformity is favorably maintained.

If the illumination area setting means (6) is set at a position away from the mask (R) and the illumination area setting means (6) is not moved during one scanning exposure, the mask ( R) on a plurality of circuit pattern areas adjacent in the scanning direction on the desired circuit pattern area .
When exposing on the 応基plate (W), there is a risk that even the pattern of other circuit pattern region is exposed on the sensitive substrate (W). Therefore, for example, by covering the other circuit pattern regions with the light shielding members (8A, 8B) arranged near the mask (R), exposure of the patterns in the other circuit pattern regions is prevented.

The mask (R) is a first relative scanning means.
In synchronization with scanning by (9, 10), a light shielding member
When scanning (8A, 8B), the first relative scanning means
If (9, 10) is also used, a new light shielding member (8A, 8
There is no need to provide scanning means for B), and the mechanism is simplified.

Further , the illumination area setting means (6) and the mask
(R) on both sides of the relay lens system (7)
If you keep it telecentric,
While moving the mask (R) (during exposure of the sensitive substrate),
Even if the position of (R) in the direction of the optical axis fluctuates, even on the mask (R)
Since the size of the illumination area set for
The image of the pattern in the desired area on the substrate (W)
Illuminance on the sensitive substrate after exposure
Good uniformity can be maintained.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an exposure apparatus according to the present invention will be described below with reference to FIGS. In the present embodiment, the present invention is applied to a projection exposure apparatus of a slit scan exposure system. FIG. 1 shows a projection exposure apparatus according to the present embodiment. In FIG. 1, a reticle R is illuminated with uniform illuminance in a rectangular slit-shaped illumination area by an illumination optical system including a point light source 1 to a relay lens 7, The circuit pattern of the reticle R illuminated by the rectangular slit-shaped illumination area is transferred onto the wafer W by the projection optical system 13.

That is, illumination light from a point light source 1 such as a mercury lamp is condensed by an elliptical mirror 2, and then collimated by a collimator lens 3 to reach a fly-eye lens 4. However, when the light source is a coherent light source such as an excimer laser light source, the illumination light emitted from the coherent light source passes through a beam shaping optical system such as a cylindrical lens or a beam expander instead of the elliptical mirror 2 and the collimator lens 3. And reaches the fly-eye lens 4. Many secondary light sources are formed on the exit surface of the fly-eye lens 4. Illumination light from the exit surface is condensed by the condenser lens 5 and reaches the field stop 6.

A rectangular slit-shaped opening is formed in the field stop 6, and the light beam passing through the field stop 6 becomes a light beam having a rectangular slit-shaped cross section and enters the relay lens system 7. The relay lens system 7 is a lens system that conjugates the field stop 6 with the circuit pattern forming surface of the reticle R, and a region on the reticle R conjugate with the rectangular slit-shaped opening of the field stop 6, that is, on the reticle R. Illumination light is applied to the rectangular slit-shaped illumination area. The relay lens system 7 is a two-sided telecentric optical system, and a rectangular slit-shaped illumination area on the reticle R maintains telecentricity.

On the reticle R of this embodiment, two light shielding plates 8A and 8B are arranged close to the reticle R in the scanning direction with respect to the slit-shaped illumination area, and the reticle R and the light shielding plates 8A and 8B are arranged. Are mounted on the reticle stage 9. A reticle blind is formed by the light-shielding plates 8A and 8B, and an image of a circuit pattern on the reticle R sandwiched between the light-shielding plates 8A and 8B in the slit-shaped illumination area is projected onto the wafer via the projection optical system 13. Projection exposure is performed on W. In a two-dimensional plane perpendicular to the optical axis of the projection optical system 13, the scanning direction of the reticle R with respect to the slit-shaped illumination area is defined as the X direction, and the direction parallel to the optical axis of the projection optical system 13 is defined as the Z direction.

In this case, the reticle R and the light shielding plates 8A, 8
B is integrally driven by a reticle stage driving unit 10 in the X direction which is the scanning direction, and the light shielding plates 8A and 8B are supported on the reticle stage 9 by the light shielding plate driving unit 11 so as to be independently movable in the X direction. ing. The operation of the reticle stage drive unit 10 and the operation of the light shielding plate drive unit 11 are controlled by the main control system 12 that controls the operation of the entire apparatus. The wafer W is placed on the wafer stage 14,
The wafer stage 14 includes an XY stage for positioning the wafer W in a plane perpendicular to the optical axis of the projection optical system 13, a Z stage for positioning the wafer W in the Z direction, and the like. The main control system 12 controls the positioning operation and the scanning operation of the wafer stage 14 via the wafer stage driving unit 15.

When exposing the pattern on the reticle R onto the wafer W via the projection optical system 13, the reticle is set in the X direction with respect to the rectangular slit-shaped illumination area set by the field stop 6. The reticle R and the light shielding plates 8A and 8B are integrally scanned via the stage 9. In synchronization with this scanning, the wafer W is scanned via the wafer stage 14 in the −X direction with respect to the image of the rectangular slit-shaped illumination area by the projection optical system 13. That is, the −X direction is the scanning direction of the wafer W. By scanning the reticle R and the wafer W synchronously in this manner, the circuit pattern of the reticle R is successively transferred onto the wafer W.

In recent years, a plurality of circuit pattern areas are provided on the reticle R in order to shorten the time required for reticle replacement and improve the throughput. Then, the light shielding plates 8A and 8B are used to select a circuit pattern area to be transferred from among the plurality of circuit pattern areas on the reticle R. Therefore, the projection exposure apparatus according to the present embodiment is provided with an input unit 16 for inputting information regarding a circuit pattern area on the reticle R, and a memory unit 17 for storing the input information of the input unit 16. Reference numeral 12 denotes light shielding plates 8A and 8B via the light shielding plate driving unit 11 based on the input information of the memory unit 17.
Is formed into a predetermined shape.

Here, the driving mechanism of the light shielding plates 8A and 8B will be described with reference to FIG. FIG. 2 shows a detailed configuration around the reticle R in FIG. 1. In FIG.
The reticle stage 9 is slidably supported on the reticle stage base 19 in the scanning direction (X direction), and the reticle R is held inside the reticle stage 9 by a vacuum chuck or the like. A portion of the reticle stage 9 corresponding to the circuit pattern forming region of the reticle R is an opening, and a region on the reticle stage base 19 corresponding to the largest region of the slit-shaped illumination region is also an opening. Further, light shielding plates 8A and 8B are attached to both ends of the reticle stage 9 in the scanning direction via feed portions 18A and 18B such as worm gears, respectively. The light shielding plate driving unit 11 of FIG.
By independently driving the feed portions 18A and 18B, the light shielding plates 8A and 8B can be moved independently in the scanning direction.

In FIG. 2, the scanning direction (X direction)
Although the light-shielding plate in the direction (non-scanning direction) perpendicular to the paper surface of FIG. 2 perpendicular to FIG. Alternatively, it may be disposed at a position substantially conjugate with the reticle R as in the field stop 6 of FIG. Hereinafter, the operation of the present embodiment when performing exposure by the slit scan exposure method will be described with reference to FIGS. At this time, as shown in FIG. 3A, two circuit pattern regions 20A and 20B are formed on the reticle R, and a light-shielding member having a width L1 in the scanning direction is formed at the boundary between the circuit pattern regions 20A and 20B. It is assumed that the portion 20C is formed. Further, the rectangular slit-shaped illumination area formed on the reticle R of the present example is a slit-shaped illumination area 21 having a width L2 in the scanning direction, as shown in FIG. Is light-shielding part 2
It is assumed that the width is wider than the width L1 of 0C.

At this time, first, the operator inputs information relating to the circuit pattern areas 20A and 20B on the reticle R to the memory unit 17 via the input unit 16 of FIG.
Then, the first circuit pattern area 20 </ b> A is
In the case where the image is transferred onto the wafer W via the
2 reads out information on the first circuit pattern area 20A from the input information stored in the memory unit 17, and based on this information, the light-shielding plates 8A,
The position in the scanning direction of 8B is adjusted. As a result, FIG.
As shown in (b), the second circuit pattern area 20B on the reticle R is covered with the light-shielding plate 8B so that only the first circuit pattern area 20A is irradiated with the illumination light of the slit-shaped illumination area 21. I do.

Next, at the time of exposure, the main control system 12 shown in FIG. 1 drives the reticle stage 9 via the reticle stage driving unit 10 to thereby make the circuit pattern area 20A on the reticle R.
After the slit-shaped illumination area 21 is positioned to the right of the reticle R, the reticle stage 9 is driven to drive the reticle R and the light shielding plate 8.
A and 8B are integrally moved in the scanning direction (X direction).
In synchronization with this, the main control system 12 drives the wafer stage 14 via the wafer stage driving unit 15 to
Is moved in the scanning direction (−X direction). In this case, since only the first circuit pattern area 20A on the reticle R is irradiated with the illumination light, only the pattern of the first circuit pattern area 20A is transferred onto the wafer W.

When transferring the pattern of the second circuit pattern area 20B on the reticle R onto the wafer W, the main control system 12 sends the second circuit pattern of the input information stored in the memory unit 17 to the second circuit pattern area. Information on the pattern area 20B is read out, and the positions of the light shielding plates 8A and 8B in the scanning direction are adjusted via the light shielding plate driving unit 11 based on the information. As a result, as shown in FIG.
Is covered with a light-shielding plate 8A, and only the second circuit pattern region 20B has a slit-shaped illumination region 2A.
One illumination light is emitted.

Next, at the time of exposure, the main control system 12 shown in FIG. 1 drives the reticle stage 9 via the reticle stage driving section 10 to form a slit on the right side of the second circuit pattern area 20B on the reticle R. After the illumination area 21 having the shape of a circle, the reticle stage 9 is driven to move the reticle R and the light shielding plates 8A and 8B integrally in the X direction. In synchronization with this, the main control system 12 drives the wafer stage 14 via the wafer stage drive unit 15 to move the wafer W in the −X direction. In this case, the second on the reticle R
Since only the circuit pattern area 20B is irradiated with the illumination light, only the pattern of the second circuit pattern area 20B is transferred onto the wafer W.

As described above, according to the present embodiment, since the light-shielding plates 8A and 8B as reticle blinds shield the area other than the circuit pattern area to be exposed from light, a plurality of reticle Rs are provided at narrow intervals in the scanning direction. Even when the circuit pattern regions are formed, there is an advantage that only the pattern of the desired circuit pattern region can be exposed on the wafer W. Therefore, a plurality of circuit pattern regions can be formed on the reticle R at narrow intervals.

In the above embodiment, the light shielding plates 8A and 8B are driven integrally with the reticle R.
Driving means for driving 8B in synchronization with the reticle R in the scanning direction may be separately provided. However, at the time of slit scan exposure, the reticle stage 9 in FIG.
Since there is a possibility of moving at a high speed of more than
The driving speed of A and 8B also requires high speed. Therefore, as shown in FIG. 2 of the present embodiment, when the reticle R and the light shielding plates 8A and 8B are mounted on the reticle stage 9, and the reticle R and the light shielding plates 8A and 8B are moved integrally. This eliminates the need for independent driving means for the light shielding plates 8A and 8B, and provides excellent synchronization of movement between the reticle R and the light shielding plates 8A and 8B.

In the above embodiment, the reticle R
2 shows a case where two circuit pattern areas are formed, the projection exposure apparatus according to the present embodiment can cope with a case where three or more circuit pattern areas are provided on the reticle R in the scanning direction. In this regard, as shown in FIG. 4A, in addition to the light shielding plates 8A and 8B in the scanning direction, two light shielding plates 8 movable in a non-scanning direction (Y direction) perpendicular to the scanning direction.
When C and 8D are provided, even if a plurality of circuit pattern regions are formed on the reticle R in the non-scanning direction, a pattern of only a desired circuit pattern region can be exposed on the wafer W. That is, for example, four circuit pattern regions 20C to 20F separated on the reticle R in the X direction and the Y direction.
Is formed, by independently adjusting the positions of the four light-shielding plates 8A to 8D, the illumination light is emitted only to any one of the four circuit pattern regions 20C to 20F. You can do so. And
By scanning the reticle R and the light shielding plates 8A to 8D integrally with respect to the slit-shaped illumination area 21 in the X direction,
The pattern in the selected circuit pattern area on the reticle R is exposed on the wafer W.

As shown in FIG. 4B, if only one circuit pattern area 20G is formed on the reticle R, a part of the illumination area on the reticle R is shielded in the scanning direction. The light shielding plate as a reticle blind for performing the light shielding is a light shielding plate 22 fixed on a reticle stage.
But it doesn't matter. In this configuration, a control system for changing the light shielding range by the light shielding plate 22 is not required. When such a fixed type light shielding plate 22 is provided, it is possible to prevent the illumination light from leaking out from the peripheral portion of the reticle R and exposing the wafer at the start or end of the slit scan exposure.

In the above embodiment, the light shielding plates 8A, 8B
Is moved in accordance with the driving of the reticle R, but the point is that if the openings of the light shielding plates 8A and 8B always move so as to coincide with the circuit pattern area to be exposed on the reticle R. good. For example, when the reticle R and the wafer W are fixed and the reticle R is exposed while scanning the slit-shaped irradiation area, it is not necessary to move the light shielding plates 8A and 8B during the exposure. Further, the shape of the slit-shaped illumination area, that is, the shape of the opening of the field stop 6 is not limited to a rectangular shape.
No. 057, a hexagonal illumination area, a diamond-shaped illumination area as disclosed in Japanese Patent Publication No. 53-25790, or Japanese Patent Application No. 4-2.
Needless to say, an arc-shaped illumination area as disclosed in Japanese Patent Application No. 42486 and Japanese Patent Application No. 4-316717 may be used.

Further, the projection optical system 13 in the above-described embodiment is used.
Can be a refraction system, a reflection system, or a catadioptric system. Further, it goes without saying that the present invention is not limited to the projection exposure apparatus, but can be applied to a contact type or proximity type exposure apparatus. As described above, the present invention is not limited to the above-described embodiment, and can take various configurations without departing from the gist of the present invention.

[0036]

According to the present invention, the illumination area setting means for setting the slit-shaped illumination area on the mask can be arranged at a position apart from the mask in the illumination optical system. Therefore, it is possible to control the width of the illumination area setting means in the scanning direction with high accuracy, and it is possible to control the sensitivity after slit scan exposure .
There is an advantage that the illumination uniformity at 応基board can be preferably maintained. Further, even when a plurality of pattern areas are formed at narrow intervals in the scanning direction on the mask, the pattern area that is not desired to be exposed is covered with the light shielding member so that the pattern of only the desired pattern area is formed on the sensitive substrate . Can be exposed.

Further , according to the present invention, it is not necessary to newly provide a driving unit for scanning the light shielding member .

According to the present invention, the slit-shaped
During scanning of the mask over the illumination area (during exposure of the substrate),
Even if the position of the mask in the optical axis direction of the projection optical system changes,
The size of the illumination area set on the disc does not change
The image of the pattern in the desired area on the mask on the sensitive substrate
Can be projected, uniform illuminance on sensitive substrate after exposure
Good performance can be maintained.

[Brief description of the drawings]

FIG. 1 is a configuration diagram illustrating a projection exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a configuration diagram illustrating a driving mechanism of a reticle R and light shielding plates 8A and 8B of FIG. 1;

3A is a plan view showing a pattern on a reticle R in FIG. 1; FIG. 3B is a plan view showing an arrangement of light shielding plates 8A and 8B when exposing a pattern in a circuit pattern area 20A;
(C) is a plan view showing the arrangement of the light shielding plates 8A and 8B when exposing the pattern of the circuit pattern area 20B.

FIG. 4A is a plan view showing a case where there are four light-shielding plates,
(B) is a plan view showing a case where the light shielding plate is a fixed type.

FIG. 5 is an explanatory diagram showing an example in which the shape accuracy of a slit-shaped illumination area in the scanning direction affects the illuminance uniformity after scanning.

FIG. 6 is an explanatory diagram showing another example in which the shape accuracy in the scanning direction of the slit-shaped illumination area affects the illuminance uniformity after scanning.

FIG. 7 is a diagram showing a relationship between a plurality of circuit pattern regions arranged on a reticle and a slit-shaped illumination region.

[Explanation of symbols]

 R Reticle W Wafer 7 Relay lens 6 Field stop 8A, 8B Light shielding plate 9 Reticle stage 10 Reticle stage driving unit 11 Light shielding plate driving unit 12 Main control system 13 Projection optical system 14 Wafer stage 15 Wafer stage driving unit 16 Input unit 17 Memory unit

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-60-107034 (JP, A) JP-A-61-247025 (JP, A) JP-A-4-196513 (JP, A) JP-A-4-19653 162670 (JP, A) JP-A-61-36930 (JP, A) JP-A-61-283125 (JP, A) JP-A-6-181164 (JP, A) JP-A-62-92959 (JP, A) 5-8935 (JP, U) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/027 G03F 7/20

Claims (4)

(57) [Claims] 1. A mask for a slit-shaped illumination area.
In an exposure apparatus for exposing a pattern on the mask having a larger area than the slit-shaped illumination area on the sensitive substrate by scanning the photosensitive substrate in synchronization with the photosensitive substrate , a rectangle is formed on the mask. An illumination to set a slit-shaped illumination area
Bright optics and the mask with respect to the rectangular slit shaped illumination area.
The mask is moved to scan in synchronization with the sensitive substrate.
Moving first relative scanning means and the mask with respect to the rectangular slit-shaped illumination area.
In order to scan synchronously with the sensitive substrate, the sensitive substrate is
Moving second relative scanning means , provided in the vicinity of the mask, synchronized with scanning of the mask;
And moved to the rectangular slit-shaped illumination area.
To cover the area on the mask where it is desired to avoid irradiating the illumination light.
An exposure apparatus , comprising: an optical member . 2. The light-shielding member according to claim 1, wherein the first relative scanning means includes a light-shielding member.
The exposure apparatus according to claim 1, wherein the exposure apparatus is also used for moving . 3. The illumination optical system is separated from the mask.
And the illumination area is set in a rectangular slit shape.
And an illumination area setting means.
3. The exposure apparatus according to 2 . 4. A mask and a light-sensitive area for an illumination area of illumination light.
By scanning in synchronization with the substrate, the illumination light is irradiated.
The pattern on the mask having a larger area than the bright region is
In an exposure apparatus for exposing on a sensitive substrate, an illumination area for setting an illumination area on the mask in a slit shape.
Area setting means, disposed between the illumination area setting means and the mask
An exposure apparatus comprising a relay lens system which is telecentric on both sides .