JPH0142126B2 - - Google Patents

Info

Publication number
JPH0142126B2
JPH0142126B2 JP55124822A JP12482280A JPH0142126B2 JP H0142126 B2 JPH0142126 B2 JP H0142126B2 JP 55124822 A JP55124822 A JP 55124822A JP 12482280 A JP12482280 A JP 12482280A JP H0142126 B2 JPH0142126 B2 JP H0142126B2
Authority
JP
Japan
Prior art keywords
layer
insulating layer
single crystal
polycrystalline silicon
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55124822A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5749224A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55124822A priority Critical patent/JPS5749224A/ja
Publication of JPS5749224A publication Critical patent/JPS5749224A/ja
Publication of JPH0142126B2 publication Critical patent/JPH0142126B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP55124822A 1980-09-09 1980-09-09 Semiconductor device Granted JPS5749224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55124822A JPS5749224A (en) 1980-09-09 1980-09-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55124822A JPS5749224A (en) 1980-09-09 1980-09-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5749224A JPS5749224A (en) 1982-03-23
JPH0142126B2 true JPH0142126B2 (cg-RX-API-DMAC7.html) 1989-09-11

Family

ID=14894958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55124822A Granted JPS5749224A (en) 1980-09-09 1980-09-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5749224A (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168651A (ja) * 1983-03-15 1984-09-22 Mitsubishi Electric Corp 半導体装置
JPS63122468A (ja) * 1986-11-11 1988-05-26 林原　健 浴室用低周波治療器
JPH0345739Y2 (cg-RX-API-DMAC7.html) * 1986-12-31 1991-09-26
JPH01130744U (cg-RX-API-DMAC7.html) * 1988-02-27 1989-09-05

Also Published As

Publication number Publication date
JPS5749224A (en) 1982-03-23

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