JPH0139210B2 - - Google Patents
Info
- Publication number
- JPH0139210B2 JPH0139210B2 JP426582A JP426582A JPH0139210B2 JP H0139210 B2 JPH0139210 B2 JP H0139210B2 JP 426582 A JP426582 A JP 426582A JP 426582 A JP426582 A JP 426582A JP H0139210 B2 JPH0139210 B2 JP H0139210B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- water
- acid
- bromine
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP426582A JPS58122734A (ja) | 1982-01-14 | 1982-01-14 | 半導体装置の製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP426582A JPS58122734A (ja) | 1982-01-14 | 1982-01-14 | 半導体装置の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58122734A JPS58122734A (ja) | 1983-07-21 |
| JPH0139210B2 true JPH0139210B2 (cg-RX-API-DMAC7.html) | 1989-08-18 |
Family
ID=11579704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP426582A Granted JPS58122734A (ja) | 1982-01-14 | 1982-01-14 | 半導体装置の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58122734A (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4994546B2 (ja) * | 2000-09-18 | 2012-08-08 | 株式会社デンソー | 液冷式内燃機関の冷却装置 |
-
1982
- 1982-01-14 JP JP426582A patent/JPS58122734A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58122734A (ja) | 1983-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5320709A (en) | Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution | |
| US6287962B1 (en) | Method for making a novel graded silicon nitride/silicon oxide (SNO) hard mask for improved deep sub-micrometer semiconductor processing | |
| JP3217556B2 (ja) | シリコン及びシリコン化合物の選択エッチングを含む集積回路作製方法 | |
| CA1067332A (en) | Dissolving baked novolak resin based photoresist with aqueous solution of permanganate and phosphoric acid | |
| US5472562A (en) | Method of etching silicon nitride | |
| GB2081159A (en) | Method of manufacturing a semiconductor device | |
| US4230522A (en) | PNAF Etchant for aluminum and silicon | |
| US4929301A (en) | Anisotropic etching method and etchant | |
| US3751314A (en) | Silicon semiconductor device processing | |
| JP2981822B2 (ja) | 選択的なエッチング方法 | |
| JPH0139210B2 (cg-RX-API-DMAC7.html) | ||
| US3405017A (en) | Use of organosilicon subbing layer in photoresist method for obtaining fine patterns for microcircuitry | |
| US6296988B1 (en) | Method for forming a mental wiring pattern on a semiconductor device | |
| US3860423A (en) | Etching solution for silver | |
| JPH052981B2 (cg-RX-API-DMAC7.html) | ||
| US6174746B1 (en) | Method of producing optical waveguides | |
| JPS61242027A (ja) | 結晶基板の表面に特定格子定数の表面格子を成形する方法 | |
| KR100205439B1 (ko) | 실리콘 습식 식각방법 | |
| JPS6317773B2 (cg-RX-API-DMAC7.html) | ||
| JPS6366414B2 (cg-RX-API-DMAC7.html) | ||
| JPS63258020A (ja) | 素子分離パタ−ンの形成方法 | |
| KR100196523B1 (ko) | 반도체 소자 제조방법 | |
| JPS60128635A (ja) | 素子分離領域の形成方法 | |
| JPH0541372A (ja) | シリコン酸化膜のウエツトエツチング方法 | |
| JPH0656866B2 (ja) | 半導体素子分離領域の形成方法 |