JPS58122734A - 半導体装置の製法 - Google Patents

半導体装置の製法

Info

Publication number
JPS58122734A
JPS58122734A JP426582A JP426582A JPS58122734A JP S58122734 A JPS58122734 A JP S58122734A JP 426582 A JP426582 A JP 426582A JP 426582 A JP426582 A JP 426582A JP S58122734 A JPS58122734 A JP S58122734A
Authority
JP
Japan
Prior art keywords
etching
acid
water
photoresist
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP426582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139210B2 (cg-RX-API-DMAC7.html
Inventor
Tadashi Saito
正 齋藤
Osamu Mikami
修 三上
Hiroshi Nakagome
弘 中込
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP426582A priority Critical patent/JPS58122734A/ja
Publication of JPS58122734A publication Critical patent/JPS58122734A/ja
Publication of JPH0139210B2 publication Critical patent/JPH0139210B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP426582A 1982-01-14 1982-01-14 半導体装置の製法 Granted JPS58122734A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP426582A JPS58122734A (ja) 1982-01-14 1982-01-14 半導体装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP426582A JPS58122734A (ja) 1982-01-14 1982-01-14 半導体装置の製法

Publications (2)

Publication Number Publication Date
JPS58122734A true JPS58122734A (ja) 1983-07-21
JPH0139210B2 JPH0139210B2 (cg-RX-API-DMAC7.html) 1989-08-18

Family

ID=11579704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP426582A Granted JPS58122734A (ja) 1982-01-14 1982-01-14 半導体装置の製法

Country Status (1)

Country Link
JP (1) JPS58122734A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002161747A (ja) * 2000-09-18 2002-06-07 Denso Corp 液冷式内燃機関の冷却装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002161747A (ja) * 2000-09-18 2002-06-07 Denso Corp 液冷式内燃機関の冷却装置

Also Published As

Publication number Publication date
JPH0139210B2 (cg-RX-API-DMAC7.html) 1989-08-18

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