JPH0138386B2 - - Google Patents

Info

Publication number
JPH0138386B2
JPH0138386B2 JP57169445A JP16944582A JPH0138386B2 JP H0138386 B2 JPH0138386 B2 JP H0138386B2 JP 57169445 A JP57169445 A JP 57169445A JP 16944582 A JP16944582 A JP 16944582A JP H0138386 B2 JPH0138386 B2 JP H0138386B2
Authority
JP
Japan
Prior art keywords
emitter
gate
thyristor
mis transistor
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57169445A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5868977A (ja
Inventor
Shutooizuiiku Mihiaeru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5868977A publication Critical patent/JPS5868977A/ja
Publication of JPH0138386B2 publication Critical patent/JPH0138386B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
JP57169445A 1981-09-29 1982-09-28 サイリスタ Granted JPS5868977A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19813138762 DE3138762A1 (de) 1981-09-29 1981-09-29 Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3138762.4 1981-09-29

Publications (2)

Publication Number Publication Date
JPS5868977A JPS5868977A (ja) 1983-04-25
JPH0138386B2 true JPH0138386B2 (enExample) 1989-08-14

Family

ID=6142948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57169445A Granted JPS5868977A (ja) 1981-09-29 1982-09-28 サイリスタ

Country Status (4)

Country Link
US (1) US4509068A (enExample)
EP (1) EP0075719B1 (enExample)
JP (1) JPS5868977A (enExample)
DE (1) DE3138762A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435550A1 (de) * 1984-09-27 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Thyristor mit erhoehter di/dt-festigkeit
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
JPS63181376A (ja) * 1987-01-23 1988-07-26 Toshiba Corp 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb

Also Published As

Publication number Publication date
EP0075719A2 (de) 1983-04-06
US4509068A (en) 1985-04-02
EP0075719A3 (en) 1984-06-13
EP0075719B1 (de) 1986-12-10
DE3138762A1 (de) 1983-04-14
JPS5868977A (ja) 1983-04-25

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