JPH0138079B2 - - Google Patents
Info
- Publication number
- JPH0138079B2 JPH0138079B2 JP19474281A JP19474281A JPH0138079B2 JP H0138079 B2 JPH0138079 B2 JP H0138079B2 JP 19474281 A JP19474281 A JP 19474281A JP 19474281 A JP19474281 A JP 19474281A JP H0138079 B2 JPH0138079 B2 JP H0138079B2
- Authority
- JP
- Japan
- Prior art keywords
- pulling
- guide
- shaft
- pulling shaft
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims 4
- 239000013078 crystal Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19474281A JPS5895691A (ja) | 1981-12-03 | 1981-12-03 | 半導体引上機における引上軸横振れ防止装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19474281A JPS5895691A (ja) | 1981-12-03 | 1981-12-03 | 半導体引上機における引上軸横振れ防止装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5895691A JPS5895691A (ja) | 1983-06-07 |
JPH0138079B2 true JPH0138079B2 (enrdf_load_html_response) | 1989-08-10 |
Family
ID=16329467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19474281A Granted JPS5895691A (ja) | 1981-12-03 | 1981-12-03 | 半導体引上機における引上軸横振れ防止装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5895691A (enrdf_load_html_response) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100542538B1 (ko) * | 2001-09-11 | 2006-01-11 | 주식회사 포스코 | 언로더 버켓 흔들림 방지장치 |
-
1981
- 1981-12-03 JP JP19474281A patent/JPS5895691A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5895691A (ja) | 1983-06-07 |
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