JPH0136553B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in an ion plating apparatus that performs thin film treatment on watch cases, decorative items such as tie pins, cutlery, and the like.

[Conventional technology]

As shown in FIG. 3, an internal gear 12 and an external gear 13
The ion plating process (hereinafter referred to as IP process) is performed while the evaporation target is made to rotate on its own axis and revolve around the evaporation target, and voltage is applied to the evaporation target via an internal gear and an external gear to accelerate the evaporated particles. It's on.

[Problem to be solved by the invention]

In IP processing, it is necessary to apply a voltage to the object to be deposited within the deposition range. However, in the past, voltage was applied to the object to be evaporated even in the non-evaporation range, which caused reverse sputtering, which caused the surface of the object to be evaporated and caused a significant deterioration in film quality, especially for decorative items. .

[Means to solve the problem]

In order to solve the above problems, the present invention performs IP treatment by applying a voltage to the object to be evaporated in the evaporation area, and releases the voltage in the non-evaporation area to prevent roughness on the surface of the object to be evaporated. In particular, it relates to the structure of transporting the deposited material.

[Effect]

With the above structure, the IP treatment is performed in the evaporation area, and the voltage is released in the non-evaporation area, so that reverse sputtering can be prevented.

〔Example〕

Embodiments of the present invention will be described below, taking as an example a structure to which a chain is applied.

In FIG. 1, a rotating frame 2 is rotated by external power (not shown) inside a vacuum chamber 1 of an ion plating apparatus. A plurality of evaporation target attachment jigs 3 are rotatably supported on the rotary frame 2 at approximately equal intervals, and a sprocket 4 is attached to one of the evaporation target attachment jigs 3. The sprocket 4 meshes with a fixed chain 5 having a generally chevron-shaped end. Both ends of the chain 5 are insulated and fixed to the vacuum chamber 1 by chain fixtures 6 made of an insulating material such as ceramics.

Further, as shown in FIG. 2, the deposition object mounting jig 3 is rotatably supported on the rotating frame 2 while being insulated by a bush 7 made of an insulating material such as ceramics.

Further, a voltage is applied to the chain 5.

Next, the operation of the present invention will be explained.

First, the deposition target 8 is attached to the deposition target attachment jig 3, and after the vacuum chamber 1 is evacuated, external power (not shown) is applied. When power is applied, the rotating frame 2 rotates (revolutions) clockwise, and the sprocket 4 attached to one side of the evaporated object mounting jig 3 attached to the rotating frame 2 does not rotate until just before it touches the chain 5. , starts rotating at the same time as it touches the chain 5, so the evaporation target attachment jig 3 and the evaporation target attachment jig 3
The deposition target 8 attached to the wafer begins to rotate (revolution). While the deposition target 8 is rotating, a voltage is applied to the deposition target 8 from the chain 5 via the sprocket 4 and the deposition target attachment jig 3, and when the deposition range A is reached, the deposition material container is removed. The vapor deposition material 10 contained in the vapor deposition material 9 is heated by the heater 11, and the vaporized particles are accelerated and deposited by the applied voltage, and the object to be vapor deposited 8 is subjected to IP treatment. Then, the sprocket 4 exceeds the vapor deposition range A and enters the dark part of the vapor deposition area.
Then, when it leaves the chain 5, the rotation is canceled. At the same time, the voltage is removed from the deposition target 8 and reverse sputtering is prevented.

By repeating the above operations, the deposition target 8 can be subjected to the IP treatment until the required film thickness is reached.

On the other hand, in the conventional method using an internal gear and an external gear, the external gear is attached to a deposition target attachment jig via an insulating material such as ceramics. Further, the deposition object mounting jig is insulated and pivotally supported by the rotating frame. Also insulate and install the internal gear. The shaft on the side where the external gear of the attachment jig for the deposition object is attached is extended, and a voltage is applied to the shaft using a brush.The IP treatment is applied to the deposition object within the evaporation range using a complicated structure.
By adopting a structure in which no voltage is applied in the non-evaporation range, the same function as the chain system of the present invention can be obtained.

〔Effect of the invention〕

As described above, the present invention uses a chain structure that is insulated and supported in a vapor deposition tank, and is electrically and mechanically engaged with the chain structure to uniformly perform IP treatment on the object to be vaporized within a predetermined vapor deposition range. In the evaporation range, the voltage on the evaporation target is released, reverse sputtering is prevented, and the surface film of the evaporation target is prevented from being roughened, so that a high-quality film can be formed with a simple structure.

[Brief explanation of drawings]

FIG. 1 is a front view of an embodiment of the ion plating apparatus of the present invention, FIG. 2 is a cross-sectional view of the evaporation target attachment jig portion of the ion plating apparatus of the present invention, and FIG. 3 is a conventional ion plating apparatus. FIG. DESCRIPTION OF SYMBOLS 1...Vacuum chamber, 2...Rotating frame, 3...Deposition target attachment jig, 4...Sprocket, 5...Chain, 6...Chain fixture, 7...Bushy, 8
...Deposition object, 9... Vapor deposition material container, 10... Vapor deposition material, 11... Heater, 12... Internal gear, 1
3...External gear.

Claims (1)

[Claims] 1. In an ion plating apparatus in which the object to be deposited is orbitally moved along the outer periphery of the vacuum chamber, the upper part of the vacuum chamber is the evaporation area and the remaining lower part is the non-evaporation area. A substantially chevron-shaped stationary chain is insulated and supported by the vacuum chamber, and a plurality of evaporation target attachment jigs that engage with the chain and rotate are rotatably insulated and pivotally supported by the rotating frame. An ion plating apparatus characterized in that the chain and the object to be deposited form an electrical connection in a rotation region determined as a rotation frame revolves.