JPH0136276B2 - - Google Patents

Info

Publication number
JPH0136276B2
JPH0136276B2 JP1345382A JP1345382A JPH0136276B2 JP H0136276 B2 JPH0136276 B2 JP H0136276B2 JP 1345382 A JP1345382 A JP 1345382A JP 1345382 A JP1345382 A JP 1345382A JP H0136276 B2 JPH0136276 B2 JP H0136276B2
Authority
JP
Japan
Prior art keywords
layer
active layer
mesa stripe
semiconductor
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1345382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58131786A (ja
Inventor
Mitsuhiro Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1345382A priority Critical patent/JPS58131786A/ja
Publication of JPS58131786A publication Critical patent/JPS58131786A/ja
Publication of JPH0136276B2 publication Critical patent/JPH0136276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Semiconductor Lasers (AREA)
JP1345382A 1982-01-29 1982-01-29 半導体レ−ザ Granted JPS58131786A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1345382A JPS58131786A (ja) 1982-01-29 1982-01-29 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1345382A JPS58131786A (ja) 1982-01-29 1982-01-29 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58131786A JPS58131786A (ja) 1983-08-05
JPH0136276B2 true JPH0136276B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-07-31

Family

ID=11833557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1345382A Granted JPS58131786A (ja) 1982-01-29 1982-01-29 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58131786A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3484266D1 (de) * 1983-11-30 1991-04-18 Sharp Kk Halbleiterlaser-vorrichtung und verfahren zu deren herstellung.
JPS61154190A (ja) * 1984-12-27 1986-07-12 Mitsubishi Electric Corp 半導体レ−ザ
US8863324B2 (en) 2008-03-31 2014-10-21 Kohler Co. Bathtub rim assembly

Also Published As

Publication number Publication date
JPS58131786A (ja) 1983-08-05

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