JPH0136258B2 - - Google Patents

Info

Publication number
JPH0136258B2
JPH0136258B2 JP56058353A JP5835381A JPH0136258B2 JP H0136258 B2 JPH0136258 B2 JP H0136258B2 JP 56058353 A JP56058353 A JP 56058353A JP 5835381 A JP5835381 A JP 5835381A JP H0136258 B2 JPH0136258 B2 JP H0136258B2
Authority
JP
Japan
Prior art keywords
region
conductivity
layer
semiconductor device
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56058353A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56164577A (en
Inventor
Hooru Repuserutaa Maachin
Min Se Shimon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Publication of JPS56164577A publication Critical patent/JPS56164577A/ja
Publication of JPH0136258B2 publication Critical patent/JPH0136258B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H10D62/184—Base regions of bipolar transistors, e.g. BJTs or IGBTs of lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H10P32/1414—
    • H10P32/171—
    • H10W20/4451—

Landscapes

  • Bipolar Transistors (AREA)
JP5835381A 1980-04-17 1981-04-17 Semiconductor device Granted JPS56164577A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/141,119 US4259680A (en) 1980-04-17 1980-04-17 High speed lateral bipolar transistor

Publications (2)

Publication Number Publication Date
JPS56164577A JPS56164577A (en) 1981-12-17
JPH0136258B2 true JPH0136258B2 (cg-RX-API-DMAC10.html) 1989-07-31

Family

ID=22494238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5835381A Granted JPS56164577A (en) 1980-04-17 1981-04-17 Semiconductor device

Country Status (2)

Country Link
US (1) US4259680A (cg-RX-API-DMAC10.html)
JP (1) JPS56164577A (cg-RX-API-DMAC10.html)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5202574A (en) * 1980-05-02 1993-04-13 Texas Instruments Incorporated Semiconductor having improved interlevel conductor insulation
US4485551A (en) * 1981-03-02 1984-12-04 Rockwell International Corporation NPN Type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom and method for producing same
FR2501912A1 (fr) * 1981-03-13 1982-09-17 Efcis Transistor bipolaire lateral sur isolant et son procede de fabrication
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
US4431460A (en) * 1982-03-08 1984-02-14 International Business Machines Corporation Method of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layer
JPS5940571A (ja) * 1982-08-30 1984-03-06 Hitachi Ltd 半導体装置
US4558507A (en) * 1982-11-12 1985-12-17 Nec Corporation Method of manufacturing semiconductor device
US4507848A (en) * 1982-11-22 1985-04-02 Fairchild Camera & Instrument Corporation Control of substrate injection in lateral bipolar transistors
US4547959A (en) * 1983-02-22 1985-10-22 General Motors Corporation Uses for buried contacts in integrated circuits
JPS6017956A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 耐放射線半導体素子
US4641170A (en) * 1983-12-12 1987-02-03 International Business Machines Corporation Self-aligned lateral bipolar transistors
US4874720A (en) * 1984-06-25 1989-10-17 Texas Instruments Incorporated Method of making a metal-gate MOS VLSI device
US5098854A (en) * 1984-07-09 1992-03-24 National Semiconductor Corporation Process for forming self-aligned silicide base contact for bipolar transistor
US4577392A (en) * 1984-08-03 1986-03-25 Advanced Micro Devices, Inc. Fabrication technique for integrated circuits
US5227316A (en) * 1985-01-22 1993-07-13 National Semiconductor Corporation Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size
EP0193934B1 (en) * 1985-03-07 1993-07-21 Kabushiki Kaisha Toshiba Semiconductor integreated circuit device and method of manufacturing the same
US4803539A (en) * 1985-03-29 1989-02-07 International Business Machines Corporation Dopant control of metal silicide formation
FR2581248B1 (fr) * 1985-04-26 1987-05-29 Efcis Procede de fabrication de transistors a effet de champ et transistors bipolaires lateraux sur un meme substrat
US4682409A (en) * 1985-06-21 1987-07-28 Advanced Micro Devices, Inc. Fast bipolar transistor for integrated circuit structure and method for forming same
US4688314A (en) * 1985-10-02 1987-08-25 Advanced Micro Devices, Inc. Method of making a planar MOS device in polysilicon
US4686763A (en) * 1985-10-02 1987-08-18 Advanced Micro Devices, Inc. Method of making a planar polysilicon bipolar device
US4860085A (en) * 1986-06-06 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Submicron bipolar transistor with buried silicide region
US4974046A (en) * 1986-07-02 1990-11-27 National Seimconductor Corporation Bipolar transistor with polysilicon stringer base contact
US5063168A (en) * 1986-07-02 1991-11-05 National Semiconductor Corporation Process for making bipolar transistor with polysilicon stringer base contact
US4788160A (en) * 1987-03-31 1988-11-29 Texas Instruments Incorporated Process for formation of shallow silicided junctions
US5059546A (en) * 1987-05-01 1991-10-22 Texas Instruments Incorporated BICMOS process for forming shallow NPN emitters and mosfet source/drains
US4816423A (en) * 1987-05-01 1989-03-28 Texas Instruments Incorporated Bicmos process for forming shallow npn emitters and mosfet source/drains
US4784966A (en) * 1987-06-02 1988-11-15 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US5005066A (en) * 1987-06-02 1991-04-02 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US4803175A (en) * 1987-09-14 1989-02-07 Motorola Inc. Method of fabricating a bipolar semiconductor device with silicide contacts
US5258644A (en) * 1988-02-24 1993-11-02 Hitachi, Ltd. Semiconductor device and method of manufacture thereof
US5208472A (en) * 1988-05-13 1993-05-04 Industrial Technology Research Institute Double spacer salicide MOS device and method
US5397912A (en) * 1991-12-02 1995-03-14 Motorola, Inc. Lateral bipolar transistor
DE4309898B4 (de) * 1992-03-30 2005-11-03 Rohm Co. Ltd. Verfahren zur Herstellung eines Bipolartransistors mit einer Polysiliziumschicht zwischen einem Halbleiterbereich und einem Oberflächenelektrodenmetall
US5539233A (en) * 1993-07-22 1996-07-23 Texas Instruments Incorporated Controlled low collector breakdown voltage vertical transistor for ESD protection circuits
US5949114A (en) 1996-11-07 1999-09-07 Micron Technology, Inc. Semiconductor device having increased breakdown voltage and method of fabricating same
US7880166B2 (en) * 2006-05-10 2011-02-01 Ho-Yuan Yu Fast recovery reduced p-n junction rectifier
US8669554B2 (en) 2006-05-10 2014-03-11 Ho-Yuan Yu Fast recovery reduced p-n junction rectifier
US7795103B2 (en) * 2006-05-19 2010-09-14 Ho-Yuan Yu Bipolar transistors with depleted emitter
US8110835B2 (en) * 2007-04-19 2012-02-07 Luminus Devices, Inc. Switching device integrated with light emitting device
US8362703B2 (en) * 2007-12-20 2013-01-29 Luminus Devices, Inc. Light-emitting devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3427513A (en) * 1966-03-07 1969-02-11 Fairchild Camera Instr Co Lateral transistor with improved injection efficiency
JPS5318383B2 (cg-RX-API-DMAC10.html) * 1974-10-07 1978-06-14
US4199775A (en) * 1974-09-03 1980-04-22 Bell Telephone Laboratories, Incorporated Integrated circuit and method for fabrication thereof
JPS5542594B2 (cg-RX-API-DMAC10.html) * 1974-10-09 1980-10-31
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
JPS539469A (en) * 1976-07-15 1978-01-27 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device having electrode of stepped structure and its production
US4160991A (en) * 1977-10-25 1979-07-10 International Business Machines Corporation High performance bipolar device and method for making same
JPS5919475B2 (ja) * 1977-12-14 1984-05-07 日本電信電話株式会社 半導体装置の製法

Also Published As

Publication number Publication date
JPS56164577A (en) 1981-12-17
US4259680A (en) 1981-03-31

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