JPH0136246B2 - - Google Patents
Info
- Publication number
- JPH0136246B2 JPH0136246B2 JP57001042A JP104282A JPH0136246B2 JP H0136246 B2 JPH0136246 B2 JP H0136246B2 JP 57001042 A JP57001042 A JP 57001042A JP 104282 A JP104282 A JP 104282A JP H0136246 B2 JPH0136246 B2 JP H0136246B2
- Authority
- JP
- Japan
- Prior art keywords
- jig
- reaction tube
- thin film
- hollow body
- film production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 239000003779 heat-resistant material Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
【発明の詳細な説明】
本発明は半導体ウエハに薄膜を生成する装置、
いつそう詳しくはこのような装置でフレークの付
着を防止する装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides an apparatus for producing a thin film on a semiconductor wafer;
More particularly, the present invention relates to a device for preventing flake adhesion in such a device.
反応管を用いる薄膜生成装置、たとえば、減圧
CVD装置、横型プラズマCVD装置等では、薄膜
生成処理を続けるにつれて反応管内壁面に反応生
成物が堆積する。特に、反応管の灼熱部を外れた
尾管部、すなわち排出端における堆積物ははがれ
やすく、膜生成中にこれがフレークとなつて半導
体ウエハ表面に付着し、ピンホールやパターン不
良を起こす原因となつており、高集積化を進める
上で重大な問題となつている。 Thin film production equipment using reaction tubes, e.g. reduced pressure
In CVD equipment, horizontal plasma CVD equipment, etc., reaction products accumulate on the inner wall surface of the reaction tube as the thin film production process continues. In particular, deposits at the tail tube, which is outside the scorching part of the reaction tube, i.e., at the discharge end, tend to peel off, and during film formation, these become flakes and adhere to the semiconductor wafer surface, causing pinholes and pattern defects. This has become a serious problem in promoting higher integration.
本発明の目的は、反応管での排出ガスの逆流に
際してフレークを捕えて薄膜を生成している半導
体ウエハにフレークを付着させないようになつて
いる装置を備えた薄膜生成装置を提供することに
ある。 An object of the present invention is to provide a thin film production apparatus equipped with a device that captures flakes during backflow of exhaust gas in a reaction tube and prevents the flakes from adhering to the semiconductor wafer on which the thin film is being produced. .
本発明によれば、耐熱性のガラス短管を充填し
た治具を反応管の尾管部内部に設置し、排ガスが
この治具を通つて流れ、逆流があつたときにはフ
レークがガラス短管に捕えられて反応管の反応区
域まで行かないようにしている。 According to the present invention, a jig filled with heat-resistant short glass tubes is installed inside the tail tube of the reaction tube, and the exhaust gas flows through this jig, and when there is a backflow, flakes are transferred to the short glass tubes. This prevents them from being captured and reaching the reaction area of the reaction tube.
以下、添付図面を参照しながら本発明について
説明する。 The present invention will be described below with reference to the accompanying drawings.
まず第１図を参照して、薄膜生成装置は反応管
１を包含し、この反応管は一端に反応ガスの入口
２を有し、他端に反応済の排ガスの出口３を有す
る。この出口３はテーパ部４によつて反応管本体
部５とつながつている。反応管本体部５のまわり
には、周知のようにヒータ６が配置してあり、約
300〜1000℃まで加熱される。図示実施例では、
反応管１は減圧式CVD装置のものであるが、本
発明が他の形成のCVD装置にも適用できること
は了解されたい。 Referring first to FIG. 1, the thin film production apparatus includes a reaction tube 1 having an inlet 2 for reactant gas at one end and an outlet 3 for reacted exhaust gas at the other end. The outlet 3 is connected to the reaction tube main body 5 through a tapered portion 4 . As is well known, a heater 6 is arranged around the reaction tube main body 5, and the heater 6 is arranged around the reaction tube main body 5.
Heated to 300-1000℃. In the illustrated embodiment,
Although the reaction tube 1 is of a reduced pressure type CVD apparatus, it should be understood that the present invention is applicable to other configurations of CVD apparatus.
反応管本体部５内には、薄膜を形成しようとし
ている半導体ウエハ７がボード８に設置された状
態で収納されている。薄膜生成用ガスは入口２か
ら流入し、半導体ウエハ７の表面に薄膜を形成し
てから出口３を通つて流出する。 A semiconductor wafer 7 on which a thin film is to be formed is housed in the reaction tube main body 5 and placed on a board 8 . The thin film forming gas flows in through the inlet 2, forms a thin film on the surface of the semiconductor wafer 7, and then flows out through the outlet 3.
ここまでは周知の構造であるが、本発明によれ
ば、反応管１の出口３に近い部分、すなわち尾管
部９の内部に治具１０が配置してある。この治具
１０は耐熱性材料で作つてあり、図示実施例によ
れば、筒状の中空体１１から成る。中空体１１は
複数個の孔１２を設けた両端壁１３を有し、内部
に耐熱性材料のガラス短管１４が充填してある。
これらのガラス短管１４は中空体１０の周壁に設
けた開口１５を通して充填し、また取出すことが
できる。この開口１５はふた１６で塞いである。 Although this is a well-known structure up to this point, according to the present invention, a jig 10 is disposed in a portion of the reaction tube 1 close to the outlet 3, that is, inside the tail tube portion 9. This jig 10 is made of a heat-resistant material and, according to the illustrated embodiment, consists of a cylindrical hollow body 11. The hollow body 11 has both end walls 13 provided with a plurality of holes 12, and the inside thereof is filled with a short glass tube 14 made of a heat-resistant material.
These short glass tubes 14 can be filled and removed through openings 15 provided in the peripheral wall of the hollow body 10. This opening 15 is closed with a lid 16.
中空体１１の、出口３に近い方の端にはそれと
同径のリング１７が取付けてあり、これは治具装
填時に反応管１のテーパ部４の内周面４Ａと接触
してシール作用をなし、逆流したガスが必ず治具
１０内に導びかれるようにしている。たとえば、
このリング１７はガラス管であり、中空体１１に
溶接してある。 A ring 17 having the same diameter is attached to the end of the hollow body 11 near the outlet 3, and this contacts the inner circumferential surface 4A of the tapered portion 4 of the reaction tube 1 when the jig is loaded to perform a sealing action. None, the backflow gas is always guided into the jig 10. for example,
This ring 17 is a glass tube and is welded to the hollow body 11.
中空体１１の反対端下部の両側面には治具１０
を反応管１内で安定させるための突起１８が設け
てある。また、治具の出入れに便利なように引つ
かけハンドル１９が中空体１１の、出口と反対側
の端壁１３に設けてある。なお、簡略化のために
図示していないが、反応管１の入口２に近い端壁
１Ａは開閉できるようになつており、ここを通し
て治具１０、半導体ウエハ７を反応管１内に出入
れできるようになつている。 A jig 10 is installed on both sides of the lower part of the opposite end of the hollow body 11.
A projection 18 is provided to stabilize the reaction tube 1 within the reaction tube 1. Further, a hook handle 19 is provided on the end wall 13 of the hollow body 11 on the side opposite to the outlet so as to conveniently take the jig in and out. Although not shown for the sake of simplicity, the end wall 1A near the inlet 2 of the reaction tube 1 can be opened and closed, and the jig 10 and the semiconductor wafer 7 can be taken in and out of the reaction tube 1 through this. I'm starting to be able to do it.
このような構成において、薄膜生成工程中、反
応ガスはほとんど抵抗を受けることなく治具１０
を通つて出口３に流れ、そこから排出するが、ガ
スの逆流があつたときにガスそのものは治具１０
を通つて反応管１内部にもどつても、フレークは
治具１０内のガラス短管１４によつて捕えられ、
反応区域に侵入することはない。 In such a configuration, the reaction gas flows through the jig 10 with almost no resistance during the thin film forming process.
The gas flows through the outlet 3 and is discharged from there, but when there is a backflow of the gas, the gas itself flows through the jig 10.
Even when the flakes return to the interior of the reaction tube 1 through the
It does not enter the reaction area.
このような治具を用いて実際に作業を行なつた
ところ、NH3ガス、SiH2Cl2ガスによつて約700
〜800℃で約0.5〜1.0Torr.の条件の下にSi3N4（窒
化シリコン膜）を形成した場合、この治具のない
場合の約１／30〜１／100程度にフレーク数を減
らすことができ、高集積化半導体装置の製造に対
して著しい歩留りの向上が可能となつた。また、
ガラス短管を取出して洗浄すれば、この治具を何
回も繰返して使用することができ、コストの点で
も有利である。 When we actually carried out work using such a jig, we found that approximately 700
When forming Si 3 N 4 (silicon nitride film) at ~800℃ and approximately 0.5 to 1.0 Torr, the number of flakes is reduced to approximately 1/30 to 1/100 of that without this jig. This has made it possible to significantly improve yields in manufacturing highly integrated semiconductor devices. Also,
If the short glass tube is taken out and cleaned, this jig can be used many times, which is advantageous in terms of cost.
中空体１１は石英ガラス、SiC、ポリシリコン
等で作ることができる。また、中空体１１の外形
は任意の形状とすることができ、そのとき、中空
体の外面と反応管内面との間を塞ぐなんらかの手
段を構じればよい。なお、治具中空体の外径が反
応管の内径とほぼ等しくてすき間のないように設
置すれば、他にシール手段を設ける必要はない。 The hollow body 11 can be made of quartz glass, SiC, polysilicon, or the like. Further, the outer shape of the hollow body 11 can be any shape, and in that case, some means for closing the space between the outer surface of the hollow body and the inner surface of the reaction tube may be provided. Note that if the outside diameter of the hollow jig is approximately equal to the inside diameter of the reaction tube and the jig is installed so that there is no gap, there is no need to provide any other sealing means.
第１図は本発明による治具を内蔵した薄膜生成
装置の概略断面図、第２図は第１図に示した治具
の一部破断斜視図、第３図は第１図の治具の端面
図、第４図は第１図の治具の一部破断側面図であ
る。
１…反応管、２…反応ガス入口、３…出口、４
…テーパ部、５…反応管本体部、６…ヒータ、７
…半導体ウエハ、９…尾管部、１０…治具、１１
…中空体、１２…孔、１３…端壁、１４…ガラス
短管。
FIG. 1 is a schematic sectional view of a thin film production apparatus incorporating a jig according to the present invention, FIG. 2 is a partially cutaway perspective view of the jig shown in FIG. 1, and FIG. 4 is a partially cutaway side view of the jig shown in FIG. 1; FIG. 1...Reaction tube, 2...Reaction gas inlet, 3...Outlet, 4
...Tapered part, 5...Reaction tube main body part, 6...Heater, 7
...Semiconductor wafer, 9...Tail tube section, 10...Jig, 11
... hollow body, 12 ... hole, 13 ... end wall, 14 ... glass short tube.
Claims (1)
出し、薄膜を生成しようとしている半導体ウエハ
を内部に設置するようになつている反応管を包含
する薄膜生成装置において、前記反応管の前記他
端付近内部にフレーク捕獲用治具が配置してあ
り、この治具が耐熱性材料で作つた筒状の中空体
から成り、この中空体の両端壁にガスの通過を許
す孔が設けてあり、前記中空体の外面と前記反応
管の内面との間を閉鎖する手段が設けてあり、さ
らに、前記中空体内に耐熱性のガラス短管が充填
してあることを特徴とする薄膜生成装置。1. A thin film production apparatus including a reaction tube in which a thin film production gas flows in from one end and flows out from the other end, and in which a semiconductor wafer on which a thin film is to be produced is placed. A flake capturing jig is placed inside near the end, and this jig consists of a cylindrical hollow body made of a heat-resistant material, and holes are provided in both end walls of this hollow body to allow gas to pass through. . A thin film production apparatus, characterized in that means is provided for closing between the outer surface of the hollow body and the inner surface of the reaction tube, and further, a short heat-resistant glass tube is filled in the hollow body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP104282A JPS58119631A (en) | 1982-01-08 | 1982-01-08 | Thin film generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP104282A JPS58119631A (en) | 1982-01-08 | 1982-01-08 | Thin film generating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119631A JPS58119631A (en) | 1983-07-16 |
| JPH0136246B2 true JPH0136246B2 (en) | 1989-07-31 |
Family
ID=11490500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP104282A Granted JPS58119631A (en) | 1982-01-08 | 1982-01-08 | Thin film generating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119631A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0458444U (en) * | 1990-09-28 | 1992-05-19 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0657637B2 (en) * | 1987-02-19 | 1994-08-03 | 日本電気株式会社 | Vapor phase growth equipment |
| WO2010020446A1 (en) * | 2008-08-19 | 2010-02-25 | Oerlikon Solar Ip Ag, Trübbach | Trap |
-
1982
- 1982-01-08 JP JP104282A patent/JPS58119631A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0458444U (en) * | 1990-09-28 | 1992-05-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58119631A (en) | 1983-07-16 |
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