JPH0657637B2 - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPH0657637B2 JPH0657637B2 JP62036962A JP3696287A JPH0657637B2 JP H0657637 B2 JPH0657637 B2 JP H0657637B2 JP 62036962 A JP62036962 A JP 62036962A JP 3696287 A JP3696287 A JP 3696287A JP H0657637 B2 JPH0657637 B2 JP H0657637B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- reaction product
- vapor phase
- growth
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はＧａＡｓ等のIII−Ｖ族化合物半導体の気相成
長装置に関する。The present invention relates to a vapor phase growth apparatus for III-V group compound semiconductors such as GaAs.
近年、ＧａＡｓを用いたマイクロ波デバイス、特にＧａ
ＡｓＦＥＴの需要が急増している。ＧａＡｓＦＥＴは半
絶縁性のＧａＡｓ基板上に成長させたエピタキシャル層
に形成されるが、このエピタキシャル層を形成させるに
はＧａ／ＡｓＣｌ３／Ｈ２系による気相成長方法が一般
に用いられている。第４図にＧａ／ＡｓＣｌ３／Ｈ２系
気相成長に用いる成長装置を示す。第４図において、４
１は反応系石英管，４２はＧａソース，４３は原料ガス
供給部，４４は基板ホルダー，４５は基板、４６は反応
生成物付着領域、４７は成長炉である。この成長装置
は、反応系石英管４１内の高温領域に置かれたＧａソー
ス４２をＡｓを供給するガス状原料と反応せしめ、生じ
た反応ガスを低温領域にて反応させ基板ホルダー４４上
に置かれた基板４５上にＧａＡｓをエピタキシャル成長
させるものである。この基板設置領域よりガス流れ方向
下流側で、およそ５０℃以上低温の領域では、反応生成
物として生じたＨＣｌ，ＧａＣｌ，ＧａＣｌ３，Ａｓ等
が反応系石英管４１の内壁に付着し、特に成長炉４７の
出口付近で温度が急激に低下する場所では上記の反応生
成物の付着が著るしい。しかるに従来の成長装置では基
板設置領域と反応生成物付着領域の間に何も施していな
かった。In recent years, microwave devices using GaAs, especially Ga
The demand for AsFET is rapidly increasing. The GaAsFET is formed in an epitaxial layer grown on a semi-insulating GaAs substrate, and a vapor phase growth method using a Ga / AsCl 3 / H 2 system is generally used to form this epitaxial layer. FIG. 4 shows a growth apparatus used for Ga / AsCl 3 / H 2 system vapor phase growth. In FIG. 4, 4
Reference numeral 1 is a reaction system quartz tube, 42 is a Ga source, 43 is a source gas supply unit, 44 is a substrate holder, 45 is a substrate, 46 is a reaction product deposition region, and 47 is a growth furnace. In this growth apparatus, a Ga source 42 placed in a high temperature region of a reaction system quartz tube 41 is reacted with a gaseous raw material for supplying As, and the generated reaction gas is reacted in a low temperature region and placed on a substrate holder 44. GaAs is epitaxially grown on the opened substrate 45. In a region at a temperature of about 50 ° C. or higher on the downstream side of the substrate installation region in the gas flow direction, HCl, GaCl, GaCl 3 , As, etc. generated as a reaction product adheres to the inner wall of the reaction-system quartz tube 41 and grows especially. Adhesion of the above-mentioned reaction products is remarkable at the place where the temperature sharply decreases near the outlet of the furnace 47. However, in the conventional growth apparatus, nothing was provided between the substrate installation area and the reaction product adhesion area.
従来の成長装置のように基板領域と反応生成物付着領域
の間に何も施されずにエピタキシャル成長を行なうと、
反応生成物のガスが基板領域に逆流して基板を汚染し、
エピタキシャル成長表面にピットが発生したり、あるい
は反応生成物の粉末が基板領域に逆流して基板上に落下
し、エピタキシャル成長方面に異常成長が発生するとい
う欠点があった。When epitaxial growth is performed without performing anything between the substrate region and the reaction product deposition region as in the conventional growth apparatus,
Reaction product gas flows back into the substrate area and contaminates the substrate,
There is a defect that pits are generated on the epitaxial growth surface, or the reaction product powder flows back to the substrate region and drops on the substrate, causing abnormal growth in the epitaxial growth direction.
本発明に係わる気相成長装置は、多数の孔を有する円形
石英板数枚を一定の間隔をおいて接続した治具を反応系
石英管内の基板領域と反応成長物付着領域との間に挿入
することを特徴とする。In the vapor phase growth apparatus according to the present invention, a jig in which several circular quartz plates having a large number of holes are connected at a constant interval is inserted between the substrate region and the reaction growth adhered region in the reaction quartz tube. It is characterized by doing.
以下図面を用いて本発明を説明する。 The present invention will be described below with reference to the drawings.
第１図は本発明の一実施例の概略断面図であり、１１は
反応系石英管、１２はＧａソース、１３は原料ガス供給
部、１４は基板ホルダー、１５は基板、１６は反応生成
物逆流防止治具、１７は反応生成物付着領域、１８は成
長炉である。ここで反応生成物逆流防止治具１６は第２
図の斜線図に示すように、多数の孔を有する円形石英板
数枚を一定の間隔をおいて接続した構造を有しており、
反応系石英管内の基板領域と反応生成物付着領域との間
に挿入される。本実施例により反応生成物のガスや粉末
が基板領域に逆流することが防止され、エピタキシャル
層に不良の発生が減少する。FIG. 1 is a schematic cross-sectional view of one embodiment of the present invention. 11 is a reaction system quartz tube, 12 is a Ga source, 13 is a source gas supply part, 14 is a substrate holder, 15 is a substrate, 16 is a reaction product. A backflow prevention jig, 17 is a reaction product adhesion region, and 18 is a growth furnace. Here, the reaction product backflow prevention jig 16 is the second
As shown by the diagonal line in the figure, it has a structure in which several circular quartz plates with many holes are connected at regular intervals.
It is inserted between the substrate area and the reaction product attachment area in the reaction system quartz tube. According to this embodiment, the reaction product gas and powder are prevented from flowing back to the substrate region, and the occurrence of defects in the epitaxial layer is reduced.
第３図に従来装置を用いてエピタキシャル成長を行なっ
た場合と、本発明装置を用いてエピタキシャル成長を行
なった場合の不良発生率を示す。第３図に示す様に本発
明による装置を用いてエピタキシャル成長を行なった場
合には従来に比べて不良が約７０％低減しており、エピ
タキシャル成長表面の良好なエピタキシャル層がきわめ
て高い確率で得られることがわかる。FIG. 3 shows the defect occurrence rates when the epitaxial growth is performed using the conventional apparatus and when the epitaxial growth is performed using the apparatus of the present invention. As shown in FIG. 3, when epitaxial growth is performed using the apparatus according to the present invention, defects are reduced by about 70% as compared with the prior art, and an excellent epitaxial layer on the epitaxial growth surface can be obtained with a very high probability. I understand.
以上に述べた様に本発明によれば、反応生成物逆流防止
治具を基板領域と反応生成物付着領域の間に挿入するこ
とによって、反応生成物のガスや粉末が基板領域に逆流
して基板を汚染することがなくなり、エピタキシャル成
長表面にピットや異常成長の少ない良好なエピタキシャ
ル層を得ることができる。As described above, according to the present invention, by inserting the reaction product backflow prevention jig between the substrate region and the reaction product adhesion region, the reaction product gas and powder are backflowed to the substrate region. The substrate is not contaminated, and a good epitaxial layer with few pits and abnormal growth can be obtained on the epitaxial growth surface.
第１図は本発明の一実施例の概略断面図、第２図は反応
生成物逆流防止治具本体の斜視図、第３図は従来装置を
用いてエピタキシャル成長を行なった場合と、本発明に
よる装置を用いてエピタキシャル成長を行なった場合の
不良発生率を示す図、第４図は従来装置による気相成長
の一実施例の概略断面図である。 １１，４１……反応系石英管、１２，４２……Ｇａソー
ス、１３，４３……原料ガス供給部、１４，４４……基
板ホルダー、１５，４５……基板、１６……反応生成物
逆流防止治具、１７，４６……反応生成物付着領域、１
８，４７……成長炉。FIG. 1 is a schematic sectional view of an embodiment of the present invention, FIG. 2 is a perspective view of a reaction product backflow preventing jig main body, and FIG. 3 is a case where epitaxial growth is performed using a conventional apparatus, and according to the present invention. FIG. 4 is a diagram showing the defect occurrence rate when epitaxial growth is performed using the apparatus, and FIG. 4 is a schematic cross-sectional view of one example of vapor phase growth using a conventional apparatus. 11, 41 ... Reacting quartz tube, 12, 42 ... Ga source, 13, 43 ... Raw material gas supply section, 14, 44 ... Substrate holder, 15, 45 ... Substrate, 16 ... Reaction product backflow Prevention jig, 17, 46 ... Reaction product adhesion area, 1
8,47 ... Growth reactor.
Claims (1)
英板を一定の間隔において接続した治具を、反応系石英
管内の基板領域と反応生成物付着領域との間に挿入する
ことを特徴とする気相成長装置。1. A jig in which at least three circular quartz plates having a large number of holes are connected at regular intervals is inserted between a substrate region and a reaction product adhering region in a reaction quartz tube. And vapor phase growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62036962A JPH0657637B2 (en) | 1987-02-19 | 1987-02-19 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62036962A JPH0657637B2 (en) | 1987-02-19 | 1987-02-19 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63206383A JPS63206383A (en) | 1988-08-25 |
| JPH0657637B2 true JPH0657637B2 (en) | 1994-08-03 |
Family
ID=12484361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62036962A Expired - Fee Related JPH0657637B2 (en) | 1987-02-19 | 1987-02-19 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0657637B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55158624A (en) * | 1979-05-29 | 1980-12-10 | Nec Corp | Semiconductor vapor phase growing apparatus |
| JPS58119631A (en) * | 1982-01-08 | 1983-07-16 | Nippon Denso Co Ltd | Thin film generating device |
-
1987
- 1987-02-19 JP JP62036962A patent/JPH0657637B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63206383A (en) | 1988-08-25 |
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