JPH0135459B2 - - Google Patents
Info
- Publication number
- JPH0135459B2 JPH0135459B2 JP6219783A JP6219783A JPH0135459B2 JP H0135459 B2 JPH0135459 B2 JP H0135459B2 JP 6219783 A JP6219783 A JP 6219783A JP 6219783 A JP6219783 A JP 6219783A JP H0135459 B2 JPH0135459 B2 JP H0135459B2
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- melting point
- liquid metal
- ion
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910045601 alloy Inorganic materials 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 23
- 229910002058 ternary alloy Inorganic materials 0.000 claims description 18
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 14
- 229910015365 Au—Si Inorganic materials 0.000 claims description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 description 34
- 230000008018 melting Effects 0.000 description 26
- 238000002844 melting Methods 0.000 description 26
- 239000006023 eutectic alloy Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910000952 Be alloy Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6219783A JPS59189545A (ja) | 1983-04-11 | 1983-04-11 | 電界放出型イオンビ−ム発生装置用液体金属イオン源の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6219783A JPS59189545A (ja) | 1983-04-11 | 1983-04-11 | 電界放出型イオンビ−ム発生装置用液体金属イオン源の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59189545A JPS59189545A (ja) | 1984-10-27 |
| JPH0135459B2 true JPH0135459B2 (de) | 1989-07-25 |
Family
ID=13193177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6219783A Granted JPS59189545A (ja) | 1983-04-11 | 1983-04-11 | 電界放出型イオンビ−ム発生装置用液体金属イオン源の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59189545A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2671983B2 (ja) * | 1987-07-27 | 1997-11-05 | 電気化学工業株式会社 | 電界放射型イオン源 |
-
1983
- 1983-04-11 JP JP6219783A patent/JPS59189545A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59189545A (ja) | 1984-10-27 |
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