JPH01317134A - Glass composition for bonding silicon carbide sintered form - Google Patents

Glass composition for bonding silicon carbide sintered form

Info

Publication number
JPH01317134A
JPH01317134A JP22980387A JP22980387A JPH01317134A JP H01317134 A JPH01317134 A JP H01317134A JP 22980387 A JP22980387 A JP 22980387A JP 22980387 A JP22980387 A JP 22980387A JP H01317134 A JPH01317134 A JP H01317134A
Authority
JP
Japan
Prior art keywords
bonding
silicon carbide
weight
glass
glass composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22980387A
Other languages
Japanese (ja)
Inventor
Iwao Hiramatsu
平松 巌
Toshiaki Sakaida
敏昭 坂井田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK, Nippon Electric Glass Co Ltd filed Critical Showa Denko KK
Priority to JP22980387A priority Critical patent/JPH01317134A/en
Publication of JPH01317134A publication Critical patent/JPH01317134A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)

Abstract

PURPOSE:To obtain the title composition capable of improving bond strength without causing bubbles or cracks on the bond interface between mutual SiC sintered forms by mutually mixing SiO2, B2O3, Al2O3 and CaO. CONSTITUTION:A mixture comprising 40-60wt.% of SiO2, 20-30wt.% of B2O3, 9-20wt.% of Al2O3, 3-15wt.% of CaO and 0-3wt.% of ZrO2 is heated to 1400-1500 deg.C and melted, and the resultant melt is plunged into water and converted into a glass, which is then ground, thus obtaining the objective glass composition 0.5-1mum in granular size for bonding SiC sintered form. Thence, this composition is mixed with an organic vehicle to prepare a pasty product, which is then applied on the respective bonding surfaces of SiC sintered forms followed by heating to 500-700 deg.C at a rate of ca.1.5 deg.C/min to effect degreasing, and the bonding surfaces are then mutually superposed and heated to 1100-1500 deg.C at a rate of 20-50 deg.C/min in a nitrogen gas atmosphere of 100-500Torr, being kept for 5-20min, thus accomplishing the mutual bonding.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は炭素珪素焼結体同志を接合させるガラス組成の
接合材に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bonding material having a glass composition for bonding carbon-silicon sintered bodies together.

〔従来の技術〕[Conventional technology]

炭化珪素焼結体は高温構造材として期待されている。そ
れは熱伝導率か大きく、耐熱強度か高く、同時に耐摩耗
性、耐食性かあるからである。
Silicon carbide sintered bodies are expected to be used as high-temperature structural materials. This is because it has high thermal conductivity, high heat resistance strength, and at the same time wear resistance and corrosion resistance.

しかし用途としてガスターヒンの内燃機関やロータ、高
精泥機械部品のように形状、寸法、精度なとの要求か高
い複雑形状な構造物の場合は予しめ一体形状て製作する
ことか難しい。このため単純形状の部品を作っておいて
、それらを接着して複雑な形状の構造体に仕上げること
か考えられる。
However, in the case of complex-shaped structures that require high requirements for shape, size, and precision, such as internal combustion engines, rotors, and high-refined mud machine parts, it is difficult to manufacture them in one piece in advance. For this reason, one idea would be to make parts with simple shapes and then glue them together to create a structure with a complex shape.

この意味において接合技術か重要視されるようになって
きた。
In this sense, bonding technology has come to be viewed as important.

この炭化珪素焼結体同志を接合する方法には珪酸アルカ
リ系、リン酸塩系、シリカツル系等の無機接着剤かある
か、この方法は接合温度か100〜400°Cと低く気
密性も悪く、強度、耐熱性も十分てない欠点かあった。
Is there a method for joining these sintered silicon carbide bodies together using an inorganic adhesive such as an alkali silicate adhesive, a phosphate adhesive, or a silica vine adhesive? However, it also had the disadvantage of not having sufficient strength and heat resistance.

〔発明か解決しようとする問題点〕[Problem that the invention attempts to solve]

本発明の目的は炭化珪素焼結体同志を接合するために、
接合界面に気泡や熱膨張係数の差異などによる亀裂の生
しない接合強度か大である接合材を提供することにある
The purpose of the present invention is to join silicon carbide sintered bodies together,
The object of the present invention is to provide a bonding material that has high bonding strength and does not cause cracks due to bubbles or differences in thermal expansion coefficients at the bonding interface.

(問題点を解決するための手段) 本件の発明者は、上記の問題点を解決するために比較的
低い共融点を持ち炭化珪素焼結体接合面に気泡、亀裂か
生しない酸化物ツルターガラスについて鋭意研究を行っ
た結果、上記の目的に適う接合用ガラス組成物を見出し
、本件発明を完成させるに至った。
(Means for Solving the Problems) In order to solve the above problems, the inventor of the present invention has developed an oxide sulter glass that has a relatively low eutectic point and does not generate bubbles or cracks on the bonded surface of silicon carbide sintered bodies. As a result of extensive research, we have discovered a bonding glass composition that meets the above objectives, and have completed the present invention.

すなわち本件発明の要旨は、炭化珪素焼結体同志を接合
させるガラス組成てあって5i0240〜60重量%、
8020〜30重量%、Al2039〜20重量%、C
a0 3〜15重量%、Zr020〜3重量%よりなる
ことを特徴とする炭化珪素焼結体の接合ガラス組成物に
ある。
That is, the gist of the present invention is that the glass composition for bonding the silicon carbide sintered bodies together contains 5i0240 to 60% by weight,
8020-30% by weight, Al2039-20% by weight, C
A bonded glass composition of a silicon carbide sintered body characterized by comprising 3 to 15% by weight of a0 and 20 to 3% by weight of Zr0.

前記の組成の限定理由を説明するとSiO□の含有量は
ガラスの熱膨張係数を炭化珪素の熱膨張係数に近い値と
するためには40重量%以上とすることか必要てあり、
又ガラス溶解温度を1450°C以下とするためには6
0重量%以下とすることか必要である。CaOはガラス
溶解時の融液の粘度を低下させ均質なガラスを製造する
ために不可欠てあり 3重量%未満ては粘度の低下か不
十分てあり、15重量%を越える場合には熱膨張係数か
炭化珪素焼結体のそれより大きくなる。Al2O3の量
は9重量%未満ては耐湿性か劣り、20重量%を越える
場合は溶融温度か高くなる。B2O3の含有量は20重
量%未満ては溶融温度か高くなり、30重量%を越える
場合はガラスの化学的安定性か低下し好ましくない。
To explain the reason for the above composition limitation, the content of SiO□ needs to be 40% by weight or more in order to make the thermal expansion coefficient of glass close to that of silicon carbide.
Also, in order to keep the glass melting temperature below 1450°C, 6
It is necessary that the content be 0% by weight or less. CaO is essential for reducing the viscosity of the melt during glass melting and producing homogeneous glass.If it is less than 3% by weight, the viscosity will be insufficiently reduced, and if it exceeds 15% by weight, the coefficient of thermal expansion will decrease. or larger than that of silicon carbide sintered body. If the amount of Al2O3 is less than 9% by weight, the moisture resistance will be poor, and if it exceeds 20% by weight, the melting temperature will be high. If the content of B2O3 is less than 20% by weight, the melting temperature will increase, and if it exceeds 30% by weight, the chemical stability of the glass will decrease, which is not preferable.

Z r 02は必須成分てはないか3重量%以下を含有
させることにより化学的耐久性を白玉させる効果かある
Although Zr 02 is not an essential component, it is effective to improve chemical durability by containing it in an amount of 3% by weight or less.

炭化珪素と酸化物ツルターガラスとは通常1000°C
以上て反応して発泡し、接合面に気泡か存在する。従っ
て接合時には減圧下て昇降温速度も5°C/min以上
て行うことか望ましく、このことにより接合部の気泡の
残留を防ぐことかできる。
Silicon carbide and oxide sulter glass are usually heated at 1000°C.
The above reaction causes foaming, and bubbles are present at the joint surface. Therefore, during bonding, it is desirable to perform the bonding under reduced pressure and at a rate of temperature rise and fall of 5° C./min or more, thereby preventing air bubbles from remaining in the bonded portion.

ガラス粉末の製造は、前記ガラス組成の原料粉末を秤量
しライカイ機なとて混合後、該混合粉末を白金ルツボに
入れ、電気炉中て1400〜1500°Cて溶融し、溶
融物を水中に投入しガラス化する。更に該ガラスをアル
ミナボールミル等て粉砕し微粉末とする。接合に用いる
ガラス粉末の粒度は微粉末であることが望ましく例えば
0.5〜1 g’m程度のものか良好である。
To manufacture glass powder, the raw material powders having the above glass composition are weighed and mixed using a Raikai machine, then the mixed powder is placed in a platinum crucible, melted at 1400 to 1500°C in an electric furnace, and the melt is immersed in water. and vitrify it. Further, the glass is ground into fine powder using an alumina ball mill or the like. The particle size of the glass powder used for bonding is preferably fine, for example, about 0.5 to 1 g'm.

又、該ガラス粉末の塗布は通常行なわれているガラス粉
末に有機ビヒクルを混合しペースト状にして、スクリー
ン印刷、ドクターブレード法、若しくは、へヶ塗り等て
行うことか可能であるが塗布面を均一に又平滑に塗布す
ることは接合面の精度及び所定の強度を維持することに
必要である。
The glass powder can be applied by mixing the glass powder with an organic vehicle and making it into a paste, which is usually done by screen printing, doctor blading, or by applying it on the surface. Uniform and smooth application is necessary to maintain the precision and desired strength of the joint surfaces.

接合は、ガラス粉末を塗布した炭化珪素焼結体の接合面
を昇温速度か例えば約1.5°C/a+inて500〜
700°Cに加熱し、バインターを空気中で除去し、得
られた脱脂後の炭化珪素焼結体接合面を重ね合せ、窒素
ガス100〜500 Torrの雰囲気下て昇降温速度
20〜506C/min、接合温度1100〜1500
℃、 5〜20分間保持して接合を行う。
The bonding is performed by heating the bonding surfaces of the silicon carbide sintered bodies coated with glass powder at a heating rate of approximately 1.5°C/a+in, for example, to 500°C or more.
Heating to 700°C, removing the binder in the air, stacking the bonded surfaces of the resulting degreased silicon carbide sintered bodies, and heating and cooling in a nitrogen gas atmosphere of 100 to 500 Torr at a temperature increase/decrease rate of 20 to 506 C/min. , bonding temperature 1100-1500
℃ and held for 5 to 20 minutes to perform bonding.

〔実施例〕〔Example〕

第1表に示すガラス組成の原料粉末を白金ルツボに入れ
電気炉中て1450°Cに加熱し、生成した融液を水中
に投入し固化させガラスを調製した。次にこのガラスを
アルミナボールミルを用い粉砕した。このガラス粉末を
エチルアルコールに懸濁させ、沈降速度の差によって分
級し、粒径1gm以下のガラス粉末を調製した。このガ
ラス粉末を有機ビヒクルと混練してペースト化し接合に
用いた。
Raw material powder having the glass composition shown in Table 1 was placed in a platinum crucible and heated to 1450°C in an electric furnace, and the resulting melt was poured into water and solidified to prepare glass. Next, this glass was crushed using an alumina ball mill. This glass powder was suspended in ethyl alcohol and classified based on the difference in sedimentation rate to prepare glass powder with a particle size of 1 gm or less. This glass powder was kneaded with an organic vehicle to form a paste and used for bonding.

炭化珪素焼結体は寸法20mmX 20mmX 22m
mの常圧焼結晶を用い、接合面20mmX 20mmを
3gmのダイヤモンドペーストてミラー研摩したものを
使用した。
The dimensions of the silicon carbide sintered body are 20 mm x 20 mm x 22 m.
A 20 mm x 20 mm joint surface was mirror-polished with 3 gm of diamond paste using a pressureless sintered crystal of 20 mm.

接合は上記ガラス粉末ペーストをスクリーン印刷て炭化
珪素焼結体の接合面に150 p、 mの厚みに印刷し
、昇温速度1.5°C/minて700°Cに加熱し、
30分間保持しバインダーを空気中で除去し、得られた
炭化珪素焼結体を脱脂後接台面を重ね合せ、次いで30
0Torrの窒素ガス雰囲気中て昇降温速度30℃/ 
min 、接合温度1400°Cで5分間保持して接合
を完了させた。
For bonding, the above glass powder paste was screen printed on the bonding surface of the silicon carbide sintered body to a thickness of 150 μm, and heated to 700°C at a heating rate of 1.5°C/min.
After holding for 30 minutes, the binder was removed in the air, and the resulting silicon carbide sintered body was degreased, and the surfaces to be attached were placed on top of each other, and then heated for 30 minutes.
Temperature increase/decrease rate of 30℃/in a nitrogen gas atmosphere of 0 Torr
The bonding temperature was maintained at 1400°C for 5 minutes to complete the bonding.

得られた炭化珪素焼結体の接合強度を同しく第1表に示
す。この表より従来の無機接着剤の接合強度4kg/ 
m rrf (工業材料(1983) 31巻9号93
〜94頁にSiC同志の接合強度38MPa )に比へ
接合強度は上昇した。又、実施例によるものは接合界面
に気泡や亀裂の発生は認められなかった。
The bonding strength of the obtained silicon carbide sintered body is also shown in Table 1. From this table, the bonding strength of conventional inorganic adhesives is 4 kg/
m rrf (Industrial Materials (1983) Vol. 31 No. 9 93
The bond strength increased to 38 MPa (see page 94). In addition, no bubbles or cracks were observed at the bonding interface in the examples.

第  1  表 〔発明の効果〕 本発明により炭化珪素焼結体同志の接合に適したガラス
組成か得られ、複雑形状の成形品の組合せか可能となる
Table 1 [Effects of the Invention] According to the present invention, a glass composition suitable for bonding sintered silicon carbide bodies can be obtained, and it is possible to combine molded products with complex shapes.

Claims (1)

【特許請求の範囲】 1、炭化珪素焼結体同志を接合させるガラス組成であっ
てSiO_2 40〜60重量%、B_2O_3 20
〜30重量%、Al_2O_3 9〜20重量%、Ca
O 3〜15重量%よりなることを特徴とする炭化珪素
焼結体の接合ガラス組成物。 2、炭化珪素焼結体同志を接合させるガラス組成であっ
てSiO_2 40〜60重量%、B_2O_3 20
〜30重量%、Al_2O_3 9〜20重量%、Ca
O 3〜15重量%、さらにZrO_2を3重量%以下
よりなることを特徴とする炭化珪素焼結体の接合ガラス
組成物。
[Claims] 1. Glass composition for bonding silicon carbide sintered bodies together, including SiO_2 40 to 60% by weight, B_2O_3 20
~30% by weight, Al_2O_3 9-20% by weight, Ca
A bonded glass composition of silicon carbide sintered body, characterized by comprising 3 to 15% by weight of O. 2. Glass composition for bonding silicon carbide sintered bodies together, with SiO_2 40 to 60% by weight, B_2O_3 20
~30% by weight, Al_2O_3 9-20% by weight, Ca
A bonded glass composition of silicon carbide sintered body characterized by comprising 3 to 15% by weight of O and further 3% by weight or less of ZrO_2.
JP22980387A 1987-09-16 1987-09-16 Glass composition for bonding silicon carbide sintered form Pending JPH01317134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22980387A JPH01317134A (en) 1987-09-16 1987-09-16 Glass composition for bonding silicon carbide sintered form

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22980387A JPH01317134A (en) 1987-09-16 1987-09-16 Glass composition for bonding silicon carbide sintered form

Publications (1)

Publication Number Publication Date
JPH01317134A true JPH01317134A (en) 1989-12-21

Family

ID=16897911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22980387A Pending JPH01317134A (en) 1987-09-16 1987-09-16 Glass composition for bonding silicon carbide sintered form

Country Status (1)

Country Link
JP (1) JPH01317134A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012072700A2 (en) 2010-12-02 2012-06-07 Commissariat à l'énergie atomique et aux énergies alternatives Method for preparing a glass/silicon-carbide composite material
JP2014094855A (en) * 2012-11-08 2014-05-22 Toshiba Corp Silicon carbide ceramic joined body, and manufacturing method for the same
CN110903102A (en) * 2019-11-25 2020-03-24 西北工业大学 SiCfCaO-Y at port of/SiC nuclear cladding tube2O3-Al2O3-SiO2Glass packaging method
CN114478043A (en) * 2022-01-12 2022-05-13 中国科学院上海硅酸盐研究所 Connection method of silicon carbide ceramic based on liquid phase sintering

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374934A (en) * 1986-09-18 1988-04-05 Nobuo Takusagawa Glass coated sintered silicon carbide and production thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374934A (en) * 1986-09-18 1988-04-05 Nobuo Takusagawa Glass coated sintered silicon carbide and production thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012072700A2 (en) 2010-12-02 2012-06-07 Commissariat à l'énergie atomique et aux énergies alternatives Method for preparing a glass/silicon-carbide composite material
JP2014094855A (en) * 2012-11-08 2014-05-22 Toshiba Corp Silicon carbide ceramic joined body, and manufacturing method for the same
CN110903102A (en) * 2019-11-25 2020-03-24 西北工业大学 SiCfCaO-Y at port of/SiC nuclear cladding tube2O3-Al2O3-SiO2Glass packaging method
CN110903102B (en) * 2019-11-25 2022-03-15 西北工业大学 SiCfCaO-Y at port of/SiC nuclear cladding tube2O3-Al2O3-SiO2Glass packaging method
CN114478043A (en) * 2022-01-12 2022-05-13 中国科学院上海硅酸盐研究所 Connection method of silicon carbide ceramic based on liquid phase sintering

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