JPH01315129A - Formation of soi structure - Google Patents
Formation of soi structureInfo
- Publication number
- JPH01315129A JPH01315129A JP14729388A JP14729388A JPH01315129A JP H01315129 A JPH01315129 A JP H01315129A JP 14729388 A JP14729388 A JP 14729388A JP 14729388 A JP14729388 A JP 14729388A JP H01315129 A JPH01315129 A JP H01315129A
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- mgo
- al2o3
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052593 corundum Inorganic materials 0.000 abstract description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 13
- 229910003158 γ-Al2O3 Inorganic materials 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 210000003127 knee Anatomy 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
イ）産業上の利用分骨
本発明ｆｄ、Ｓ ＯＩ （Ｓｉｌｉ、ａｏｎ ｏｎ
工ｎａｕｌａτｏｒ）構造の形成方法（：関し、上層
の８１膜へのオートドーピングを低減させるものセ関す
る。[Detailed description of the invention] A) Industrial application of the present invention fd, SOI (Sili, aon on
The present invention relates to a method for forming an 81 structure and a method for reducing autodoping to the upper layer 81 film.
口）従来の技術
絶縁層上（ニー結晶シリコツ層ン形成したものはＳＯｔ
Ｏ造と称され、半導体集積回路における高集積化、高速
化、低消費電力化が図れるものとして知られている。) Conventional technology The one formed on the insulating layer (knee crystal silicon layer is SOt)
It is known as O-structure and is known for its ability to achieve higher integration, higher speed, and lower power consumption in semiconductor integrated circuits.
ｓｏｒ構造の一つに、単結晶８１基板上に形成し九絶縁
層としてのＭｇｏ 、ＡＩ！２０３膜上（−単結晶Ｓ１
膜？形成したものがある。例えば、「電気通信学会技術
研究報告」ｇｎ３６−６５第２１頁乃至第２６頁では、
単結晶８１基板上に、ＡＩ！−１１０１！−Ｍｇ、Ｃ１
２−００２−Ｈ２系気相成長法（；より単結晶ＭｇＯ，
Ａ／２０３膜を成長させ、該ＭｇＯ，ＡＪ２０Ｂ膜上に
、Ｂｉ、１４−Ｈ２系気相成長法ζ；より基板温度９０
０乃至１０００℃１−て膜厚０．１μｍ（／ＪＳｉシー
ド層な成長させ友後、基板温度５００乃至６０Ｌｌ’Ｃ
でアモルファスＳｉ層を堆積させ、基板温度Ｚ７００乃
至８００℃にして固相成長させて、単結晶Ｓ１膜／単結
晶ＭｇＯ・ＡＪ２０５膜／単結晶８１基板の構造？形成
しＣいる。One of the SOR structures is formed on a single crystal 81 substrate with Mgo, AI! 203 on the film (-single crystal S1
film? There is something that has been formed. For example, in "IECE Technical Research Report" gn36-65, pages 21 to 26,
AI! on a single crystal 81 substrate! -1101! -Mg, C1
2-002-H2-based vapor phase growth method (; more than single crystal MgO,
A/203 film was grown on the MgO, AJ20B film, and Bi was grown at a substrate temperature of 90% using the 14-H2 vapor phase growth method.
After growing the JSi seed layer, the substrate temperature was 500 to 60Ll'C.
Then, deposit an amorphous Si layer and grow it in solid phase at a substrate temperature of Z700 to 800°C to form a single crystal S1 film/single crystal MgO・AJ205 film/single crystal 81 substrate structure? It forms C.
ハ）発明が解決しようとする課題
然し乍ら、上述の方法では、８１シ一ド層の成長の際（
二ＭｇＯ，ＡＩ！２０３膜からＭｇや＾Ｌ等のオートド
ーピングが起こる九め、成長させ−ｆｃＳ１膜はＭｇ−
？ＡＩ！等乞高濃度に含み、結晶性が悪かった。そして
、斯様なＳ１膜にＭ Ｏ８） ９ンジスタを形成した場
合（二を工、リーク電流が大きなものとなってしまう。c) Problem to be solved by the invention However, in the above method, when growing the 81 seed layer (
Two MgO, AI! Nineth, autodoping of Mg, ^L, etc. occurs from the 203 film, and the grown-fcS1 film is Mg-
? AI! Contained at extremely high concentrations, the crystallinity was poor. If a MO8) transistor is formed on such an S1 film (second problem), the leakage current will become large.
本発明は上述の点Ｉ：鑑みて為され念もので、上層の８
１膜へのオートドーピング！低減し、結晶性の良いＳ１
膜から成るＳＯ工構造を提供するものである。The present invention has been made in view of the above-mentioned point I.
Auto-doping into one film! Reduced S1 with good crystallinity
This provides an SO-engineered structure consisting of a membrane.
二）課題を解決するための手段
本発明は基板上に単結晶ＭｇＯ，Ａｊ２０！膜を形成し
、該単結晶ＭｇＯ、Ａｊ２０ｇ膜に８１分子線を照射し
てｒ−Ａｌ２Ｏ３膜を形成し、該ｒ−Ａｊ２０３膜上：
；Ｓ１分子線を照射して単結晶Ｓ１膜を形成するもので
ある。2) Means for Solving the Problems The present invention provides single crystal MgO on a substrate, Aj20! Form a film, irradiate the single crystal MgO, Aj20g film with 81 molecular beams to form an r-Al2O3 film, and on the r-Aj203 film:
; A single crystal S1 film is formed by irradiating S1 molecular beam.
ホ）作 用
単結晶ＭｇＯ，ＡＩ！２０！＄膜（；８１分子線Ｙ！射
すると、
ＭｇＯ，Ａｊ２（Ｈ＋３１ →Ｍｇｔ−ｔ−８ｉＯＴ＋
Ａｌ２Ｏ３の反応が起き、Ｍｇｏ、Ａｌ２Ｏ５膜はｒ−
Ａｌ２Ｏ３膜とな＝ｏこのｒ−Ａｊ２０ｇ膜上；二重結
晶Ｓ１膜な成長させるので、Ｓ１膜へのＭｇのオートド
ーピングはほとんどなくなる。また、γ−Ａ／ ２０５
膜の表面エネルギーはＭｇＯ、Ａｊ’２０３膜（：比べ
て小さいので、低い基板温度での単結晶５ｉｌｌｄの成
長が可能となり、オートドーピングの発生？低減できる
。e) Action Single crystal MgO, AI! 20! $ film (;81 When molecular beam Y! is irradiated, MgO,Aj2(H+31 →Mgt-t-8iOT+
A reaction of Al2O3 occurs, and the Mgo and Al2O5 films become r-
Since the Al2O3 film is grown on this r-Aj20g film as a double crystal S1 film, autodoping of Mg into the S1 film is almost eliminated. Also, γ-A/205
Since the surface energy of the film is smaller than that of the MgO and Aj'203 films, single crystal 5illd can be grown at a low substrate temperature, and the occurrence of autodoping can be reduced.
へ）実施例
第１図Ａ乃至Ｅは本発明方法の工程説明図である。（１
）は（１００）面に主面とする単結晶８１基板（第１図
Ａ）で、該基板（１）上（二Ａ Ｊニー ）ｉ ０１−
ＭｇＣ！！２−Ｃ０２−Ｈ２系の気相エピタキシャル成
長により、基板温度ｙｘ９２０℃とし、成長速Ｗ １０
ｎ ｍ ７分で約１０分間、膜厚約Ｌ１．１μｍの単
結晶ＭｇＯ、Ａ／２０５膜（２）を形成する（第１図Ｂ
）。f) Example FIGS. 1A to 1E are process explanatory diagrams of the method of the present invention. (1
) is a single crystal 81 substrate (FIG. 1A) whose main surface is the (100) plane, and on the substrate (1) (2 A J knee ) i 01-
MgC! ! By vapor phase epitaxial growth of 2-C02-H2 system, the substrate temperature yx is 920°C and the growth rate W 10
A single crystal MgO, A/205 film (2) with a film thickness of about L1.1 μm is formed for about 10 minutes at n m 7 minutes (Fig. 1B).
).
次Ｃ二この基＠を図示しない分子線エピタキシャル（Ｍ
ＢＥ）装置の成長室内に設置し、成長室内’ｉ’ｌＸ１
０ ＴＯｒｒの超高真空１ｎ；ｆｌ（：、ｆ、６゜超
高真空状態を保持しながら、基板を８２０℃１：加熱し
保持する。図示しないが、ＭＢＥ装置の蒸発源セルＣ二
収容されたＳｌに電子ビームを照射し、Ｓ１ン蒸発させ
て８１分子線を発生させ、基板表面（シｇｏ、Ａ？２Ｑ
５＠（２）表面）１″−８１分子線を１×１０ 個／−
０Ｓの強度にて照射して、表面のエツチングＣ；よる清
浄化を行う。Molecular beam epitaxial (M
BE) Installed in the growth chamber of the device, and placed inside the growth chamber 'i'lX1
0 Torr ultra-high vacuum 1n; fl (:, f, 6°) While maintaining the ultra-high vacuum state, the substrate is heated and held at 820°C. Although not shown, the evaporation source cell C2 of the MBE apparatus is housed. The electron beam is irradiated onto the S1 to evaporate the S1 to generate 81 molecular beams, and the substrate surface (Shigo, A?2Q
5@(2) Surface) 1×10 1″-81 molecular beams/-
The surface is cleaned by etching C by irradiation with an intensity of 0S.
清浄化が終了したら基板温度７８２０℃に保持し次まま
、８１分子線強度を５×１０ 個／ ｄ 。After cleaning, the substrate temperature was maintained at 7,820°C, and the intensity of the 81 molecular beam was increased to 5 × 10 molecules/d.
Ｓ（：増加して、ＭｌｇＯ・Ａ／２０ｇ１ｌ＊（２）へ
と６０秒間照射しく第１図Ｏ）、更に６分間加熱保持す
る０
このとき、第１図Ｏに示す様Ｉ：、飛来したＳ１原子＋
３１と単結晶ｕｇｏ、ＡＩ！２０！５膠（２）との間で
圧の高いＭＥ原子と８１０分子が滞発する。その結果、
スピネル膜（ＭｇＯ、Ａ／ ２０ ｇｌｌ’ｊ（２１）
中のＭＩＪ原子及びＭｇ原子と結合してい声０原子が抜
けて空孔となり７′？、櫂造の単績晶γ−Ａｔ！２０５
膜（４）が形成（単結晶ＭｇＯ、Ａｌ２Ｏ５膜（２）が
単結晶γ−Ａ／２０５膜（４）に改質）ざする（第１図
Ｄ）。S (: increase and irradiate MlgO・A/20g1l*(2) for 60 seconds (Fig. 1 O), and heat and hold for another 6 minutes. At this time, as shown in Fig. 1 O, I:. S1 atom +
31 and single crystal ugo, AI! High-pressure ME atoms and 810 molecules stagnate between the 20!5 glue (2) and the 810 molecules. the result,
Spinel film (MgO, A/20 gll'j (21)
The voice 0 atom bonded to the MIJ atom and Mg atom inside falls out and becomes a vacancy 7'? , Kaizo's single crystal γ-At! 205
A film (4) is formed (the single crystal MgO, Al2O5 film (2) is modified to the single crystal γ-A/205 film (4)) (FIG. 1D).
第２図は、単結晶Ｍｇｏ、Ａｌ２Ｏ５膜（２１に８１分
子線を照射して形成されたｒ−Ａｌ２Ｏ３膜（４）ヲ含
む基板Ｘ線回折測定の結果を示すものである。第２図か
られかる様【：、矢印で示すＭｇＯ。Figure 2 shows the results of X-ray diffraction measurements on a substrate containing a single crystal Mgo, Al2O5 film (r-Al2O3 film (4) formed by irradiating 21 with 81 molecular beams). Rekaru-sama [:, MgO indicated by arrow.
）、１２０５を表す位置Ｃニピークはなく、代わり（：
ｒ−Ａｌ２Ｏ３を表す位置でのピークが測定されておシ
、ＭｇＯ’Ａｊ２０Ｍがｒ−Ａ／ ２０ ！ｌ二変わっ
ている。), there is no position C double peak representing 1205, instead (:
A peak at the position representing r-Al2O3 was measured, and MgO'Aj20M is r-A/20! l2 has changed.
さて、ｒ −Ａｊ’ ２０ Ｓ膜（４）？形成したら、
Ｍ ＢＥ装置の成長室内をｌＸ１０ Ｔｏｒｒの超高
真空状態（：保持したｔｔ１基板潟度を７００℃まで降
温し、単結晶ｒ−ＡＩ！２０３模（４）上（二分子線強
度５×１０ 個／ｃｊ 、 ｓの８１分子線ケ照射して
単結晶８１膜（５）をエピタキシャル成長させる（第１
図Ｅ）。Now, r -Aj' 20 S film (4)? Once formed,
The growth chamber of the MBE apparatus was placed in an ultra-high vacuum state of 1 x 10 Torr (: The temperature of the tt1 substrate held therein was lowered to 700 °C, and the temperature was lowered to 700 °C, and a monocrystalline r-AI!203 model (4) (bimolecular beam intensity of 5 × 10 A single crystal 81 film (5) is grown epitaxially by irradiation with 81 molecular beams of /cj, s (first
Figure E).
通常ＭＢＥ法により単結晶Ｓｉ膜ｙ成長させる場合１：
は、成長した単結晶Ｓ１膜の電気的特性や結晶性を考慮
して、基板温ＶをＦ３ＤＯ’Ｃ：以上に保持し念状態で
行われる。When growing a single crystal Si film y by the normal MBE method 1:
This is carried out under the assumption that the substrate temperature V is maintained at F3DO'C or higher, taking into account the electrical characteristics and crystallinity of the grown single crystal S1 film.
し７かし、単結晶γ−Ａ１２０５膜（４）上に単結晶Ｓ
１膜（５）を成長させる場合、単結晶ＭｇＯ，ＡＩ！２
０３膜上Ｃ＝単結晶Ｓ１膜を成長させる場合と較べると
、Ｓ ｉ原子とＭｇＯ，ｌ／２０！！膜のうちのＭｇＯ
との反応がなくなる分だけ、少ないエネルギーで単結晶
Ｓ１膜の成長が可能となる。つまりｒ−Ａｌ２Ｏ３膜の
ほうが、Ｍｇｏ、Ａｊ２０３膜Ｃ：比べて表面エネルギ
ーが小さいので、単結晶Ｓ１膜の成長（：少ないエネル
ギー、即ち低い基板温度での成長ができる。However, single crystal S on single crystal γ-A1205 film (4)
When growing one film (5), single crystal MgO, AI! 2
Compared to the case of growing C=single crystal S1 film on 03 film, Si atoms and MgO, l/20! ! MgO in the film
Since the reaction with the oxide is eliminated, a single crystal S1 film can be grown with less energy. In other words, since the surface energy of the r-Al2O3 film is lower than that of the Mgo and Aj203 films, the single crystal S1 film can be grown with less energy, that is, at a lower substrate temperature.
単結晶Ｓ１膜（５）を成長させる下層がｒ−Ａｌ２Ｏ３
漢で、Ｍｇ原子ンはとんど含まない上Ｃ：、低い基板温
度で単結晶Ｓ１膜（４）の成長を行うので、単結晶Ｓ１
膜（５）へのオートドーピングが低減されるＯ
第６図Ｃ：、二次イオン質量分析Ｃ：よるＭｇのプロフ
ァイルを示す（但し、単結晶Ｓ１膜の厚さはα６μｍで
ある）。実線は本発明Ｃ；よる単結晶ｒ−Ａ／２０５膜
上（：単結晶Ｓ１膜を成長させたもの、破線は従来の単
結晶Ｍｇ０−Ａｌ２Ｏ３膜上（；単結晶成長させ友もの
である。ＭｇＯ、Ａ／２０５膜よりもγ−Ａ１２０ｓ膜
上（二８１膜を成長させたほうが、Ｓ１膜中にオートド
ーピングされるＭｇの濃度も分布領域（絶縁膜から８１
膜への深さ、約％となっている）も非常Ｃ：小さいもの
となる。また、８１膜中へのＡｌのオートドーピングＣ
：ついても、はぼ同様なプロファイルを示し、本発明で
は単結晶Ｓ１膜中へのオートドーピングが抑制される０
更に結晶性Ｃ；ついても、ホール電子移動度を測定する
と、単結晶ＭｇＯ，Ａ／２０３膜上に形成した単結晶Ｓ
１膜では１０１０ｊ／ｖ、ｓで、単結晶ｒ−Ａｔ２０５
膜上Ｃ；形成した上納；形成膜では６５０ｃｄ／Ｖ、Ｂ
であり、本発明Ｃ二よる単結晶Ｓ１膜のほうが結晶性が
向上している０尚、本実施例ではＭｇＯ０ＡＩ！２０２
膜（２＋の厚さはα１μｍとしたが、もつと厚く形成し
ても良く、その場合！＝は、γ−Ａｌ２Ｏ３膜ζ；改質
するための８１分子線の照射量は多くなる０また、ＳＯ
■構造としてはγ−ｋｌ！２０１膜の下菟：８１０２膜
が形成されていても良い。The lower layer on which the single crystal S1 film (5) is grown is r-Al2O3.
Since the single-crystal S1 film (4) is grown at a low substrate temperature and contains almost no Mg atoms, the single-crystal S1 film (4)
Autodoping into the film (5) is reduced. Figure 6C: shows the Mg profile according to secondary ion mass spectrometry analysis (however, the thickness of the single crystal S1 film is α6 μm). The solid line is on a single-crystal r-A/205 film according to the present invention (a single-crystal S1 film grown), and the broken line is on a conventional single-crystal Mg0-Al2O3 film (a single-crystal-grown film). It is better to grow the MgO, A/20s film on the γ-A120s film (281 film) than on the A/205 film, since the concentration of Mg autodoped into the S1 film also increases from the distribution region (from the insulating film to 81
The depth into the film (approximately %) is also very small. In addition, autodoping of Al into the 81 film C
: However, in the present invention, autodoping into the single crystal S1 film is suppressed. Single crystal S formed on /203 film
Single crystal r-At205 at 1010j/v, s for one film
C on the film; above the formed film; 650 cd/V on the formed film, B
Therefore, the crystallinity of the single crystal S1 film according to Invention C2 is improved. In this example, MgO0AI! 202
The thickness of the film (2+ was α1 μm, but it may be formed thicker. In that case, != is the γ-Al2O3 film ζ; the amount of irradiation of the 81 molecular beam for modification is increased0. S.O.
■The structure is γ-kl! An 8102 film may be formed below the 201 film.
ト）発明の効果
本発明は以上の説明から明らかな如く、ｓｏｒ構造の絶
縁膜として単結晶ｒ−Ａ１２０ｓ膜を用い、該ｒ−Ａ／
２０５膜上に単結晶Ｓ１膜を形成している。単結晶Ｓ１
膜の下層Ｉ：はＭｇ原子がほとんど存在しないばかシか
、単結晶Ｓ１膜のエピタキシャル成長！従来より低温で
できるので、単結晶Ｓ１膜へのＭｇ原子やｈｌ原子のオ
ートドーピングが低減される。更に、単結晶Ｓ１膜の結
晶性も向上される。従って、本発明の８０１構造をもつ
基板（Ｓｉ膜上）（二ＭＯ８）ランジスタを形成した場
合Ｃ二は、リーク電流の小さい、また特性のばらつきの
少ない素子が形成される。g) Effects of the invention As is clear from the above description, the present invention uses a single crystal r-A120s film as an insulating film with a sor structure, and the r-A/
A single crystal S1 film is formed on the 205 film. Single crystal S1
The lower layer I: of the film has almost no Mg atoms, which is ridiculous because it is an epitaxial growth of a single crystal S1 film! Since this can be done at a lower temperature than conventionally, autodoping of Mg atoms and hl atoms into the single crystal S1 film is reduced. Furthermore, the crystallinity of the single crystal S1 film is also improved. Therefore, when a substrate (on a Si film) (two MO8) transistors having the 801 structure of the present invention is formed, an element with small leakage current and little variation in characteristics is formed in C2.
ｉＫ１図Ａ乃至Ｅは本発明一実施例の工程説明図、第２
図はＸ線回折による組成図、第５図は単結晶Ｓ１膜中の
Ｍｇのプロファイルを示す図である０（１）・・・単結
晶８１基板、（２）・・・単結晶ＭｇＯ、Ａｊ２０３＠
、（３）・・・８１分子線、（４）・・・単結晶γ−Ａ
ｊ２０５膜、（５）・・・単結晶Ｓ１膜。
第１図
第２図
田珂自 ２θ （ｄｅｇｒｅｅ）
第３図iK1 Figures A to E are process explanatory diagrams of one embodiment of the present invention, the second
The figure shows the composition diagram by X-ray diffraction, and Figure 5 shows the profile of Mg in the single crystal S1 film. @
, (3)...81 molecular beam, (4)...single crystal γ-A
j205 film, (5)...single crystal S1 film. Figure 1 Figure 2 Takaji 2θ (degree) Figure 3
Claims (1)
、該単結晶ＭｇＯ、Ａｌ＿２Ｏ＿３膜にＳｉ分子線を照
射して単結晶γ−Ａｌ＿２Ｏ＿３膜を形成し、該単結晶
γ−Ａｌ＿２Ｏ＿３膜上にＳｉ分子線を照射して単結晶
Ｓｉ膜を形成することを特徴とするＳＯＩ構造の形成方
法。1) Form a single crystal MgO, Al_2O_3 film on a substrate, irradiate the single crystal MgO, Al_2O_3 film with a Si molecular beam to form a single crystal γ-Al_2O_3 film, and form a single crystal γ-Al_2O_3 film on the single crystal γ-Al_2O_3 film. A method for forming an SOI structure, which comprises forming a single crystal Si film by irradiating molecular beams.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14729388A JPH01315129A (en) | 1988-06-15 | 1988-06-15 | Formation of soi structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14729388A JPH01315129A (en) | 1988-06-15 | 1988-06-15 | Formation of soi structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01315129A true JPH01315129A (en) | 1989-12-20 |
Family
ID=15426932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14729388A Pending JPH01315129A (en) | 1988-06-15 | 1988-06-15 | Formation of soi structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01315129A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10326578B4 (en) * | 2003-06-12 | 2006-01-19 | Siltronic Ag | Process for producing an SOI disk |
-
1988
- 1988-06-15 JP JP14729388A patent/JPH01315129A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10326578B4 (en) * | 2003-06-12 | 2006-01-19 | Siltronic Ag | Process for producing an SOI disk |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3048201B2 (en) | Manufacturing method of semiconductor material thin film | |
| US5735949A (en) | Method of producing electronic, electrooptical and optical components | |
| TWI222110B (en) | Semiconductor device and production process thereof | |
| KR20030074152A (en) | METHOD FOR PRODUCING RELAXED SiGe SUBSTRATE | |
| JP3220864B2 (en) | Method for manufacturing semiconductor device | |
| JPH01315129A (en) | Formation of soi structure | |
| JPS58190020A (en) | Epitaxial growth method | |
| RU2390874C1 (en) | Method for obtaining heteroepitaxial silicon-on-sapphire structures | |
| JP3377814B2 (en) | Polycrystalline silicon thin film and method for forming the same | |
| JP3273037B2 (en) | Method for manufacturing heterostructure semiconductor multilayer thin film | |
| JPH04330717A (en) | Manufacture of semiconductor film | |
| JPS60180142A (en) | Manufacture of semiconductor thin film | |
| JPS5848415A (en) | Formation of semiconductor single crystal film | |
| JPH01183825A (en) | Formation of single crystal silicon film | |
| JPH0396223A (en) | Forming method for soi structure | |
| JPH03101121A (en) | Formation of soi structure | |
| JPS5893215A (en) | Manufacture of semiconductor singlecrystal thin film | |
| JPH02100315A (en) | Formation of crystalline silicon film | |
| JPS63174308A (en) | Manufacture of semiconductor thin film crystal layer | |
| Yamanaka et al. | Strain relaxation and induced defects in SiGe thin films grown on ion-implanted Si substrates | |
| Haond | Recrystallization of Si on insulating substrates by using incoherent light sources | |
| JPH03127823A (en) | Selective epitaxial growth method | |
| JPH02302024A (en) | Solid epitaxial growth | |
| JPH06120137A (en) | Formation of single crystal silicon thin film | |
| JPH07118451B2 (en) | Method for manufacturing single crystal silicon layer |