JPH01310547A - 半導体装置のボンディング方法 - Google Patents

半導体装置のボンディング方法

Info

Publication number
JPH01310547A
JPH01310547A JP63142282A JP14228288A JPH01310547A JP H01310547 A JPH01310547 A JP H01310547A JP 63142282 A JP63142282 A JP 63142282A JP 14228288 A JP14228288 A JP 14228288A JP H01310547 A JPH01310547 A JP H01310547A
Authority
JP
Japan
Prior art keywords
laser
electrode
contact
lead frame
brought
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63142282A
Other languages
English (en)
Inventor
Kazuhiro Iino
飯野　和宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63142282A priority Critical patent/JPH01310547A/ja
Publication of JPH01310547A publication Critical patent/JPH01310547A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置のボンディング方法に関し、特に金
属線ワイヤーを用いた半導体装置のボンディング方法に
関する。
〔従来の技術〕
従来、この種のワイヤーボンディングは、大別すると以
下の２方式および両方式の複合型となっていた。
■、第６図に示すように、半導体素子及びリードフレー
ムの裏面を加熱することにより、半導体素子の外部引出
し用電極及びリードフレームのステッチ部を加熱させ、
その状態で半導体素子の外部引出し用電極リードフレー
ムのステッチ部に金属ワイヤーを接触・加圧させること
によりワイヤーボンディングを行っていた。
２、第７図に示すように半導体素子の外部引出し用電極
及びリードフレームのステッチ部に接触している金属ワ
イヤーを震動させそれによって発生する摩擦熱と半導体
素子及びリードフレームの裏面からの補助加熱を加えて
ボンディングを行っていた。
〔発明が解決しようとする課題〕
上述した従来のボンディングでは、半導体素子及びリー
ドフレームの裏面を加熱しているので、リードフレーム
が熱膨張によりあばれたりフレームの表面が酸化したり
するという欠点がある。
〔課題を解決するための手段〕
本発明のボンディングは、レーザーを用いて極小部分の
みを加熱させるという手段を有している。
〔実施例〕
次に、本発明について図面を参照して説明する。
第１図は本発明の半導体素子の外部引出し用電極と金属
ワイヤーのボンディングの一実施例の縦断面図である。
１は銅ワイヤ−，２は半導体素子、３は半導体素子上の
外部引出し用電極で、銅ワイヤ１を４のクランパーで猟
んで先端を外部引出し用電極３に接触させ５のレーザー
を接触部に照射させたところである。この時、レーザー
５の照射角度が外部引出し用電極３の表面より大きくな
ると外部引出し用電極３がレーザー５によって破壊され
る現象が発生し、良好な接続を行うことができなくなる
。また、レーザー５のパワーを上げすぎると銅ワイヤ−
１や外部引出し用電極３が蒸発してしまう。また、レー
ザー５が外部引出し用電極３以外の半導体素子２上に照
射されない様集光率を上げて選択的に照射する。
第２図は、本実施例で作成した製品の縦断面図である。
なお、第２図はレーザーの照射方向を銅ワイヤ−２を中
心にして３６０°回転して作った。
第３図は本発明の実施例２の縦断面図である。
６は銅リードフレームのステッチ部で銅ワイヤ−１をク
ランパー４で派んで図示の様にまげ、ワイヤー自身の張
力でもってステッチ６と接触させレーザー５を上方から
照射したものである。
第４図は、本実施例で作成した製品の縦断面図である。
また第５図は本実施例の派生例で銅ワイヤ−１がレーザ
ー５で溶融状態になった時点でクランパー４を閉じて銅
ワイヤーを猟み上げたところである。この様にするとス
テッチ６と銅ワイヤ−１の接続と銅ワイヤーの切断を同
時にできるという利点がある。
〔発明の効果〕
以上説明したように本発明は、レーザーを用いることに
より、余分なエネルギーを半導体素子やリードフレーム
に与えることなくボンディングできリードフレームの熱
膨張によるあばれやフレーム表面の酸化を低減できる効
果がある。また実施例２のようにすることにより連続ボ
ンディングも可能となる効果もある。
【図面の簡単な説明】
第１図は本発明の実施例１の縦断面図、第２図は実施例
１の方法で作った製品の縦断面図、第３図は実施例２の
縦断面図、第４図は実施例２の方縦断面図である。 １・・・・・・銅ワイヤ−，２・・・・・・半導体素子
、３・・・・・・半導体素子の外部引出し用電極、４・
・・・・・ワイヤークランパー、５・・・・・・レーザ
ー、６・・・・・・リードフレームのステッチ部、７・
・・・・・金ワイヤ−、訃・・・・・リードフレーム、
９・・・・・・ヒーターブロック、１０・・・・・・ウ
ェッジツール、１１・・・・・・キャピラリーツール。 代理人　弁理士　　内　原　　　音 第１０ 篤Ｚ面 第３七ｄ　　　　　　　　　／明予酊イヤーーー　　　
　　・　−６・・・ト一゛す“−６１、又テ、７＋＠ｐ づイ５４　ト］ 箭５回 ／・・・泰月ワイヤー ４パ・グクンハ１− Δ・・・ステ１．フ＋杏や 笈Ｚ図 ７・・・全フイＡクー ロ・１、リートフトーム ？・・・Ｉ咀李ｊ ９　′ｂ−ターグロック ／Ｉ・・・ヴトヅツール ７・・・金フ仔 δ・、・　リー１′−りし−ム ２・・・半葎株案５ ワ・・・　ピプフ゛口、ツク ／ｌ・・・午「じフソーツーノト

Claims (1)

    【特許請求の範囲】
  1. 　半導体素子の外部引出し用電極と、金属ワイヤーを接
    触させ、該部分にレーザーを照射させることによって、
    両物質の溶融・混合を行わせ、しかる後に該部分を冷却
    させることにより両物質間のオーミックコンタクトを得
    る半導体装置のボンディング方法。
JP63142282A 1988-06-08 1988-06-08 半導体装置のボンディング方法 Pending JPH01310547A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63142282A JPH01310547A (ja) 1988-06-08 1988-06-08 半導体装置のボンディング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63142282A JPH01310547A (ja) 1988-06-08 1988-06-08 半導体装置のボンディング方法

Publications (1)

Publication Number Publication Date
JPH01310547A true JPH01310547A (ja) 1989-12-14

Family

ID=15311743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63142282A Pending JPH01310547A (ja) 1988-06-08 1988-06-08 半導体装置のボンディング方法

Country Status (1)

Country Link
JP (1) JPH01310547A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772031B2 (en) 2006-01-24 2010-08-10 Nec Electronics Corporation Semiconductor apparatus manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772031B2 (en) 2006-01-24 2010-08-10 Nec Electronics Corporation Semiconductor apparatus manufacturing method

Similar Documents

Publication Publication Date Title
US5498850A (en) Semiconductor electrical heater and method for making same
JP4765853B2 (ja) 半導体装置の製造方法
JPH06333972A (ja) 半田ワイヤーにボール部を形成する方法
JPH01310547A (ja) 半導体装置のボンディング方法
JP2008132682A (ja) 樹脂製品のカシメ留め用溶着チップ及びその溶着チップを用いた樹脂製品のカシメ留め方法
JPS62152143A (ja) バンプ形成方法
JP2975207B2 (ja) 半田ワイヤーによるワイヤーボンディング装置
JPS60194543A (ja) バンプ電極形成方法
JP3457196B2 (ja) ボールボンディング方法
JPH01227458A (ja) バンプ電極形成方法
JP4246449B2 (ja) ボンディング用ストリップおよび該ストリップを用いたボンディング方法
JPH0218583B2 (ja)
JP4201060B2 (ja) 半導体装置、およびその製造方法
JPS60225437A (ja) 半導体装置のワイヤ−ボンド方法
JPS62190734A (ja) 半導体装置の製造方法
JPS60144943A (ja) 半導体装置の製造方法
JPH07283221A (ja) バンプの形成方法
US2317483A (en) Method of welding, soldering, and fusing metals together
JP4457057B2 (ja) 金属との接合方法および封止電子部品の製造方法
JPS6379331A (ja) ワイヤボンデイング装置
JPS58182843A (ja) ワイヤボンデイング方法
JPS62136842A (ja) 半導体装置の製造方法
JPH05343461A (ja) ワイヤボンディング方法及びその装置
JPH01321645A (ja) 半導体装置の製造方法
JPH01251628A (ja) ボンディング装置