JPH01306820A - Liquid crystal display device - Google Patents

Liquid crystal display device

Info

Publication number
JPH01306820A
JPH01306820A JP63135474A JP13547488A JPH01306820A JP H01306820 A JPH01306820 A JP H01306820A JP 63135474 A JP63135474 A JP 63135474A JP 13547488 A JP13547488 A JP 13547488A JP H01306820 A JPH01306820 A JP H01306820A
Authority
JP
Japan
Prior art keywords
liquid crystal
signal line
light
crystal display
video signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63135474A
Other languages
Japanese (ja)
Inventor
Sakae Someya
染谷 栄
Masahiko Suzuki
雅彦 鈴木
Hirobumi Kunito
国藤 博文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63135474A priority Critical patent/JPH01306820A/en
Publication of JPH01306820A publication Critical patent/JPH01306820A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133512Light shielding layers, e.g. black matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To improve video characteristics and prolong the life of liquid crystal by connecting a light shield conductor film provided between a scanning signal line or video signal line and the liquid crystal electrically to a common transparent picture element electrode. CONSTITUTION:The light shield conductor films LS2 are provided on the scanning signal line GL and video signal line DL. The light shield conductor film LS2 is constituted to size larger than the width of the scanning signal line GL and video signal line DL, e.g. a mask matching deviation quantity or more. Further, the light shield conductor films LS2 are so constituted not overlapping with the transparent picture element electrode ITO 1 or overlapping with it slightly. Then the light shield conductor films LS2 are connected electrically to the common transparent picture element electrode at the peripheral part (nearby a liquid crystal sealed part) of the liquid crystal display device by interposing a conductive material such as a silver paste material. Consequently, a light leak at the scanning signal line or video signal line part is reduced and the video characteristics and the life of the liquid crystal are improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、液晶表示装置に関し、特に、走査信号線と映
像信号線との交差部分に画素が配列された液晶表示装置
に適用して有効な技術に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a liquid crystal display device, and is particularly effective when applied to a liquid crystal display device in which pixels are arranged at the intersection of a scanning signal line and a video signal line. It is related to technology.

【従来の技術〕[Conventional technology]

液晶表示部の各画素の表示を薄膜トランジスタ(TPT
)で制御するアクティブ・マトリックス方式の液晶表示
装置が知られている。この液晶表示装置は下部透明ガラ
ス基板と上部透明ガラス基板との間の空間に液晶を封入
している。下部透明ガラス基板の内側(液晶側)の表面
には、透明画素電極とそれに印加される電圧を制御する
薄膜トランジスタからなる画素が設けられている。上部
透明ガラス基板の内側(液晶側)の表面には、前記透明
画素電極と対向する共通透明画素電極が設けられている
The display of each pixel in the liquid crystal display section is performed using thin film transistors (TPT).
) Active matrix type liquid crystal display devices are known. This liquid crystal display device has liquid crystal sealed in a space between a lower transparent glass substrate and an upper transparent glass substrate. A pixel consisting of a transparent pixel electrode and a thin film transistor that controls the voltage applied thereto is provided on the inner surface (liquid crystal side) of the lower transparent glass substrate. A common transparent pixel electrode facing the transparent pixel electrode is provided on the inner surface (liquid crystal side) of the upper transparent glass substrate.

前記各画素は列方向に延在する2本の走査信号線と行方
向に延在する2本の映像信号線とで囲まれた領域内に配
置されている。各画素の薄膜トランジスタのゲート電極
は2本の走査信号線のうちの1本に接続されている。各
画素の薄膜トランジスタのドレイン電極(又はソース電
極)は2本の映像信号線のうちの1体に接続されている
。薄膜トランジスタのソース電極(又はドレイン電極)
は前記透明画素電極に接続されている。
Each pixel is arranged within a region surrounded by two scanning signal lines extending in the column direction and two video signal lines extending in the row direction. The gate electrode of the thin film transistor of each pixel is connected to one of the two scanning signal lines. The drain electrode (or source electrode) of the thin film transistor of each pixel is connected to one of the two video signal lines. Source electrode (or drain electrode) of thin film transistor
is connected to the transparent pixel electrode.

なお、液晶表示装置については、例えば特願昭62−1
44913号に記載されている。
Regarding liquid crystal display devices, for example, Japanese Patent Application No. 1986-1
No. 44913.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明者は、液晶表示装置の開発中に、走査信号線(場
合によっては映像信号線)或はその近傍が点灯して所謂
光漏れを生じるので、コントラスト等の映像特性が劣化
するという問題点を見出した。
During the development of a liquid crystal display device, the present inventor discovered that the scanning signal line (in some cases, the video signal line) or its vicinity is illuminated, causing so-called light leakage, which deteriorates image characteristics such as contrast. I found out.

本発明者は、共通透明画素電極に印加される電位(コモ
ン電位)の設定によっては共通透明画素電極と走査信号
線との間に約5!−20[V]径程度直流電圧成分が加
わるので、両者電極間に生じる電界で液晶(ネガタイプ
)が駆動されることが原因であると考察している。
The inventor of the present invention found that, depending on the setting of the potential (common potential) applied to the common transparent pixel electrode, the distance between the common transparent pixel electrode and the scanning signal line is approximately 5. It is considered that the cause is that the liquid crystal (negative type) is driven by the electric field generated between the two electrodes since a DC voltage component of about -20 [V] diameter is added.

また、本発明者は、共通透明画素電極と走査信号線との
間に加わる直流電圧成分によって、配向不良等、液晶の
寿命を劣化さ□せるという問題点を見出した。
Further, the present inventors have discovered a problem in that the direct current voltage component applied between the common transparent pixel electrode and the scanning signal line causes poor alignment, etc., and deteriorates the lifespan of the liquid crystal.

本発明の目的は、液晶表示装置において、映像特性を向
上すると共に、液晶の寿命を向上することが可能な技術
を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a technique capable of improving image characteristics and extending the life of a liquid crystal in a liquid crystal display device.

本発明の他の目的は、前記目的を達成するための製造工
程数を低減することが可能な技術を提供することにある
Another object of the present invention is to provide a technique that can reduce the number of manufacturing steps to achieve the above object.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述及び添付図面によって明らかになるであろ
う。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔課題を解決するための手段〕[Means to solve the problem]

本願において開示される発明のうち1代表的なものの概
要を簡単に説明すれば、下記のとおりである。
A brief overview of one typical invention disclosed in this application is as follows.

液晶表示装置において、走査信号線又は映像信号線と液
晶との間に遮光用導体膜を設け、この遮光用導体膜と共
通透明画素電極とを電気的に接続する。
In a liquid crystal display device, a light-shielding conductor film is provided between a scanning signal line or a video signal line and a liquid crystal, and the light-shielding conductor film and a common transparent pixel electrode are electrically connected.

また、前記遮光用導体膜は、画素の薄膜トランジスタの
チャネル形成領域上に設けられた遮光膜と同一製造工程
で形成する。
Further, the light-shielding conductor film is formed in the same manufacturing process as the light-shielding film provided on the channel formation region of the thin film transistor of the pixel.

また、前記遮光用導体膜、前記遮光膜の夫々は電気的に
分離させる。
Further, each of the light-shielding conductor film and the light-shielding film is electrically isolated.

〔作  用〕[For production]

上述した手段によれば、走査信号線又は映像信号線部分
の光漏れを低減したので、映像特性を向上することがで
きると共に、走査信号線又は映像信号線と共通透明画素
電極との間の液晶に加わる直流電圧成分を低減したので
、液晶の寿命を向上することができる。
According to the above-mentioned means, since light leakage in the scanning signal line or video signal line portion is reduced, the video characteristics can be improved, and the liquid crystal between the scanning signal line or video signal line and the common transparent pixel electrode can be improved. Since the DC voltage component applied to the liquid crystal is reduced, the life of the liquid crystal can be improved.

また、前記遮光膜を形成する工程で遮光用導体膜を形成
することができるので、遮光用導体膜を形成する工程に
相当する分、製造工程数を低減することができる。
Furthermore, since the light-shielding conductor film can be formed in the step of forming the light-shielding film, the number of manufacturing steps can be reduced by the amount corresponding to the step of forming the light-shielding conductor film.

また、前記遮光膜をフローティング状態にしてそれから
の電界効果を低減したので、薄膜トランジスタの特性を
向上することができる。
Furthermore, since the light shielding film is placed in a floating state to reduce the electric field effect therefrom, the characteristics of the thin film transistor can be improved.

以下、本発明の構成について、アクティブ・マトリック
ス方式のカラー液晶表示装置に本発明を適用した一実施
例とともに説明する。
Hereinafter, the configuration of the present invention will be described together with an embodiment in which the present invention is applied to an active matrix color liquid crystal display device.

なお、実施例を説明するための全図において、同一機能
を有するものは同一符号を付け、その繰り返しの説明は
省略する。
In addition, in all the figures for explaining the embodiment, parts having the same functions are given the same reference numerals, and repeated explanations thereof will be omitted.

〔実施例〕〔Example〕

本発明の一実施例であるアクティブ・マトリックス方式
のカラー液晶表示装置の液晶表示部の1画素を第1図(
平面−)及び第2図(第1図の■−■切断線で切った断
面図)で示す。
Figure 1 shows one pixel of the liquid crystal display section of an active matrix color liquid crystal display device, which is an embodiment of the present invention.
2 (a sectional view taken along the section line ``--'' in FIG. 1).

第1図及び第2図に示すように、液晶表示装置は、下部
透明ガラス基板5UBIの内側(液晶側)の表面上に、
薄膜トランジスタTPT及び透明画素電極ITO1で構
成される画素を有している。
As shown in FIGS. 1 and 2, the liquid crystal display device has a
It has a pixel composed of a thin film transistor TPT and a transparent pixel electrode ITO1.

下部透明ガラス基板SUB 1は1.1 [mm]程度
の厚さで構成されている。
The lower transparent glass substrate SUB 1 has a thickness of about 1.1 [mm].

薄膜トランジスタTPTは、主に、ゲート電極GT、ゲ
ート絶縁膜G1.i型半導体層AS、ドレイン電極(又
はソース電極)SDI、ソース電極(又はドレイン電極
)Sn2で構成されている。
The thin film transistor TPT mainly includes a gate electrode GT, a gate insulating film G1 . It is composed of an i-type semiconductor layer AS, a drain electrode (or source electrode) SDI, and a source electrode (or drain electrode) Sn2.

前記ゲート電極GTは、例えば断線を防止するために、
Cr層上にMO層を積層した複合膜で形成する。ゲート
電極GTは走査信号線(水平信号線)GLと一体に構成
されそれに接続されている。
For example, in order to prevent disconnection of the gate electrode GT,
It is formed from a composite film in which an MO layer is laminated on a Cr layer. The gate electrode GT is integrated with and connected to a scanning signal line (horizontal signal line) GL.

この走査信号線OLは、第1図において列方向に延在し
、行方向に所定間隔で複数本配置されている。
The scanning signal lines OL extend in the column direction in FIG. 1, and a plurality of scanning signal lines OL are arranged at predetermined intervals in the row direction.

i型半導体層ASは薄膜トランジスタTPTのチャネル
形成領域として使用される。i型半導体層Asは非晶質
珪素膜又は多結晶珪素膜で形成されている。
The i-type semiconductor layer AS is used as a channel formation region of the thin film transistor TPT. The i-type semiconductor layer As is formed of an amorphous silicon film or a polycrystalline silicon film.

ドレイン電極SDI、ソース電極SD2の夫々はi型半
導体層AS上に夫々離隔して設けられている。ドレイン
電極SDI、ソース電極SD2の夫々は、回路のバイア
ス極性が変ると、動作上、ソースとドレインが入れ替わ
るように構成されている。ドレイン電極S01.ソース
電極SD2の夫々は、例えば、i型半導体層ASに接触
する下層側からCr層、AQ層の夫々を順次積層して形
成されている。01層はi型半導体層ASとAQ層との
反応を防止するバリア層として形成されている。AQ層
は、信号伝達速度を速くする低抵抗材料であり、主配線
材料として使用される。
The drain electrode SDI and the source electrode SD2 are each provided on the i-type semiconductor layer AS to be separated from each other. Each of the drain electrode SDI and the source electrode SD2 is configured such that when the bias polarity of the circuit changes, the source and drain are interchanged in operation. Drain electrode S01. Each of the source electrodes SD2 is formed, for example, by sequentially laminating a Cr layer and an AQ layer from the lower layer side in contact with the i-type semiconductor layer AS. The 01 layer is formed as a barrier layer to prevent reaction between the i-type semiconductor layer AS and the AQ layer. The AQ layer is a low resistance material that increases signal transmission speed and is used as a main wiring material.

薄膜トランジスタTPTの一方のソース電極SD2には
1画素毎に設けられた透明画素電極ITO1が接続され
ている。透明画素電極IT○1は液晶表示部の画素電極
の一方を構成する。他方のドレイン電極SDIは映像信
号線(垂直信号線)DLと一体に構成されそれに接続さ
れている。この映像信号線DLは、第1図において行方
向に延在し、列方向に所定間隔で複数本配置されている
A transparent pixel electrode ITO1 provided for each pixel is connected to one source electrode SD2 of the thin film transistor TPT. The transparent pixel electrode IT○1 constitutes one of the pixel electrodes of the liquid crystal display section. The other drain electrode SDI is integrated with and connected to a video signal line (vertical signal line) DL. The video signal lines DL extend in the row direction in FIG. 1, and a plurality of video signal lines DL are arranged at predetermined intervals in the column direction.

第1図に示すように、1つの画素は2本の走査信号線G
Lと2本の映像信号線DLとで囲まれた領域内に配置さ
れている。この領域内に配置された1つの画素の薄膜ト
ランジスタは、2本のうちの一方の走査信号線GL、2
本のうちの一方の映像信号線DLの夫々に接続されてい
る。
As shown in Figure 1, one pixel consists of two scanning signal lines G.
It is arranged in an area surrounded by L and two video signal lines DL. The thin film transistor of one pixel arranged in this area is connected to one of the two scanning signal lines GL and 2.
It is connected to each of the video signal lines DL of one of the books.

薄膜トランジスタTPT及び透明画素電極IT01上番
嗟よ保護膜PSVIが設けられている。保護膜PSV1
は、主に薄膜トランジスタTPTを湿気等から保護する
ために形成されており、透明性が高くしかも耐湿性の良
い酸化珪素膜や窒化珪素膜で形成する。
A protective film PSVI is provided over the thin film transistor TPT and the transparent pixel electrode IT01. Protective film PSV1
is formed mainly to protect the thin film transistor TPT from moisture, etc., and is formed of a silicon oxide film or a silicon nitride film that is highly transparent and has good moisture resistance.

薄膜トランジスタTPTの少なくともチャネル形成領域
上には、保護膜PSVIを介在させて、外部光がチャネ
ル形成領域として使用されるi型半導体層ASに入射さ
れないように遮光膜LSIが設けられている。遮光膜L
SIは、例えばAQ層、Cr層、それらの複合層等、遮
光性を有する材料で形成されている。
A light shielding film LSI is provided over at least the channel formation region of the thin film transistor TPT, with a protective film PSVI interposed therebetween, so that external light does not enter the i-type semiconductor layer AS used as the channel formation region. Light shielding film L
The SI is formed of a material having light-shielding properties, such as an AQ layer, a Cr layer, or a composite layer thereof.

液晶LCは、下部透明ガラス基板5UBIと上部透明ガ
ラス基板5UB2との間に形成された空間内に、液晶分
子の向きを設定する下部配向膜ORI 1.上部配向膜
○RI2の夫々に規定されて封入されている。
The liquid crystal LC includes a lower alignment film ORI for setting the orientation of liquid crystal molecules in a space formed between the lower transparent glass substrate 5UBI and the upper transparent glass substrate 5UB2.1. It is defined and sealed in each of the upper alignment films RI2.

下部配向膜0RIIは下部透明ガラス基板1側の保護膜
PSVIの上部に形成される。下部配向膜0R11は例
えば感光性ポリイミド系樹脂材料で形成する。
The lower alignment film 0RII is formed on the protective film PSVI on the lower transparent glass substrate 1 side. The lower alignment film 0R11 is made of, for example, a photosensitive polyimide resin material.

上部透りガラス基板5UB2の内側(液晶側)の表面に
は、カラーフィルタFIL、保護膜PSv2、共通透明
画素電極ITO2及び前記上部配向膜0RI2が順次積
層して設けられている。
On the inner surface (liquid crystal side) of the upper transparent glass substrate 5UB2, a color filter FIL, a protective film PSv2, a common transparent pixel electrode ITO2, and the upper alignment film 0RI2 are sequentially laminated.

前記共通透明画素電極ITO2は、下部透明ガラス基板
5UBI側に画素毎に設けられた透明画素電極ITOI
に対向し、隣接する他の共通透明画素電極ITO2と一
体に構成されている。つまり、共通透明画素電極ITO
2は上部透明ガラス基板5UB2の内側の表面の略全域
に設けられている。
The common transparent pixel electrode ITO2 is a transparent pixel electrode ITOI provided for each pixel on the lower transparent glass substrate 5UBI side.
It is configured integrally with another common transparent pixel electrode ITO2 that is opposite to and adjacent to the common transparent pixel electrode ITO2. In other words, the common transparent pixel electrode ITO
2 is provided over substantially the entire inner surface of the upper transparent glass substrate 5UB2.

カラーフィルタFILは、その配列を図示していないが
、赤色フィルタ(R)、緑色フィルタ(G)及び青色フ
ィルタ(B)の3色の色フィルタで構成されている。夫
々の色フィルタは各画素毎にそれに対向する位置に配置
されている。カラーフィルタFILは1例えばアクリル
樹脂を主体とする膜を画素毎に染料で染め分けることに
よって形成することができる。
Although the arrangement of the color filter FIL is not shown, it is composed of three color filters: a red filter (R), a green filter (G), and a blue filter (B). Each color filter is arranged at a position opposite to each pixel. The color filter FIL can be formed by, for example, dyeing a film mainly made of acrylic resin for each pixel with a dye.

前記保護膜PSV2は、前記カラーフィルタFILを異
なる色に染め分けた染料が液晶LCに漏れることを防止
するために設けられている。保護膜PSV2は1例えば
、アクリル系樹脂、エポキシ系樹脂等の透明樹脂材料で
形成されている。
The protective film PSV2 is provided to prevent the dyes used to dye the color filters FIL into different colors from leaking into the liquid crystal LC. The protective film PSV2 is made of a transparent resin material such as acrylic resin or epoxy resin.

この液晶表示装置は、下部透明ガラス基板5UBl側、
上部透明ガラス基板5UB2側の夫々の層を別々に形成
し、その後、上下透明ガラス基板5UBI及び5UB2
を重ね合せ、両者間に液晶LCを封入することによって
組み立てられる。
This liquid crystal display device has a lower transparent glass substrate 5UBl side,
Each layer on the upper transparent glass substrate 5UB2 side is formed separately, and then the upper and lower transparent glass substrates 5UBI and 5UB2 are formed separately.
It is assembled by overlapping the two and sealing the liquid crystal LC between them.

下部透明ガラス基板SUB 1、上部透明ガラス基板5
UB2の夫々の外側の表面には、偏光板POLが形成さ
れている。
Lower transparent glass substrate SUB 1, upper transparent glass substrate 5
A polarizing plate POL is formed on the outer surface of each UB2.

このように構成される液晶表示装置は、第1図及び第2
図に示すように、走査信号線OL上、映像信号線DL上
の夫々に遮光用導体膜LS2が設けられている。遮光用
導体膜LS2は、走査信号線OL、映像信号線DLの夫
々の幅寸法に比べて若干大きなサイズ(例えばマスク合
せずれ量分或はそれ以上大きなサイズ)で構成されてい
る。また、遮光用導体膜LS2は、透明画素電極ITO
1と重ならないように或は若干型なるように構成する。
The liquid crystal display device configured in this way is shown in FIGS. 1 and 2.
As shown in the figure, a light shielding conductor film LS2 is provided on each of the scanning signal line OL and the video signal line DL. The light-shielding conductor film LS2 is configured to have a slightly larger size (for example, a size larger than the mask misalignment amount or more) than the respective width dimensions of the scanning signal line OL and the video signal line DL. In addition, the light-shielding conductor film LS2 is made of transparent pixel electrode ITO.
Construct it so that it does not overlap with 1 or so that it has a slight shape.

遮光用導体膜LS2は、走査信号線GL、映像信号線D
Lの夫々と液晶LCとの間に設けられていればよく、本
実施例においては保護膜PS■1と下部配向膜0RII
との間に設けられている。
The light-shielding conductor film LS2 is connected to the scanning signal line GL and the video signal line D.
It is sufficient that the protective film PS■1 and the lower alignment film 0RII are provided between each of L and the liquid crystal LC.
is established between.

前記遮光用導体膜LS2は、薄膜トランジスタTPTの
チャネル形成領域上に設けられた遮光膜LSIと同一層
(同一導電層)で構成され、同一製造工程で形成されて
いる。すなわち、遮光用導体膜LS2は、Cr層、AQ
層等の遮光性を有しかつ導電性を有する材料で構成され
ている。この遮光用導体膜LS2は前記遮光膜LSIと
電気的に分離されており、遮光膜LSIは電気的にフロ
ーティグ状態で構成されている。そして、遮光用導体膜
LS2は、図示していないが、液晶表示装置の周辺部分
(液晶封止部分の近傍部分)において、銀ペース材等の
導電性材料を介在させて共通透明画素電極ITO2と電
気的に接続されている。共通透明画素電極IT○2には
第3図(液晶表示装置の駆動波形図)に示すようにコモ
ン電位が印加されているので、遮光用導体膜LS2には
コモン電位と同一電位が印加されるように構成されてい
る。第3図に示すように、共通透明画素電極IT02、
遮光用導体膜LS2の夫々は例えば−10〜−15[V
]の範囲の固定電位が印加される。走査信号線OLは、
例えばハイレベルを5[vコ、ロウレベルを−20[V
]とする走査信号(例えば63[μS]毎に1 /24
0[μs]のパルス信号)が印加される。映像信号線D
Lは、例えばハイレベルを1.5 EV]、ロウレベル
を−11,5[V]とする映像信号が印加される。
The light-shielding conductive film LS2 is made of the same layer (same conductive layer) as the light-shielding film LSI provided on the channel formation region of the thin film transistor TPT, and is formed in the same manufacturing process. That is, the light-shielding conductor film LS2 includes a Cr layer, an AQ
It is made of a material that has a light-shielding property such as a layer and is electrically conductive. This light-shielding conductor film LS2 is electrically isolated from the light-shielding film LSI, and the light-shielding film LSI is configured in an electrically floating state. Although not shown, the light-shielding conductor film LS2 is connected to the common transparent pixel electrode ITO2 in the peripheral area of the liquid crystal display device (near the liquid crystal sealing area) with a conductive material such as a silver paste interposed therebetween. electrically connected. Since a common potential is applied to the common transparent pixel electrode IT○2 as shown in FIG. 3 (driving waveform diagram of the liquid crystal display device), the same potential as the common potential is applied to the light-shielding conductor film LS2. It is configured as follows. As shown in FIG. 3, the common transparent pixel electrode IT02,
Each of the light-shielding conductive films LS2 has a voltage of -10 to -15 [V, for example.
A fixed potential in the range of ] is applied. The scanning signal line OL is
For example, high level is 5[V], low level is -20[V]
] (for example, 1/24 every 63 μS)
A pulse signal of 0 [μs]) is applied. Video signal line D
For example, a video signal having a high level of 1.5 EV] and a low level of -11.5 [V] is applied to L.

このように、液晶表示装置において、走査信号線GL、
映像信号線DLの夫々と液晶LCとの間に遮光用導体膜
LS2を設け、この遮光用導体膜LS2と共通透明画素
電極ITO2とを電気的に接続することにより、走査信
号線GL、映像信号線DLの夫々の部分を覆い、光漏れ
を低減したので、コントラスト等の映像特性を向上する
ことができると共に、走査信号線GL、映像信号線DL
の夫々の部分と共通透明画素電極ITO2との間の電位
差を低減し、液晶LCに加わる直流電圧成分を低減した
ので、配向不良等の液晶LCの寿命を向上することがで
きる。
In this way, in the liquid crystal display device, the scanning signal lines GL,
By providing a light-shielding conductor film LS2 between each of the video signal lines DL and the liquid crystal LC, and electrically connecting the light-shielding conductor film LS2 and the common transparent pixel electrode ITO2, the scanning signal line GL and the video signal Since each part of the line DL is covered to reduce light leakage, image characteristics such as contrast can be improved, and the scanning signal line GL and the video signal line DL are
Since the potential difference between each portion of the liquid crystal and the common transparent pixel electrode ITO2 is reduced and the DC voltage component applied to the liquid crystal LC is reduced, the life of the liquid crystal LC due to alignment defects etc. can be improved.

また、前記遮光用導体膜LS2は、画素の薄膜トランジ
スタTPTのチャネル形成領域上に設けられた遮光膜L
SIと同一製造工程で形成したことにより、前記遮光膜
LSIを形成する工程で遮光用導体膜LS2を形成する
ことができるので、遮光用導体膜LS2を形成する工程
に相当する分。
Further, the light-shielding conductor film LS2 is a light-shielding film L provided on the channel formation region of the thin film transistor TPT of the pixel.
Since the light shielding conductor film LS2 can be formed in the same manufacturing process as the SI, the light shielding conductor film LS2 can be formed in the process of forming the light shielding film LSI.

液晶表示装置の製造工程数を低減することができる。The number of manufacturing steps for a liquid crystal display device can be reduced.

また、前記遮光用導体膜LS2、前記遮光膜LS1の夫
々を電気的に分離することにより、前記遮光膜LSIを
フローティング状態にしてそれからの電界効果を低減し
たので、ゲート電極GTの選択時以外に不要にチャネル
が形成されることを防止し、薄膜トランジスタTPTの
特性を向上することができる。
Furthermore, by electrically separating each of the light-shielding conductor film LS2 and the light-shielding film LS1, the light-shielding film LSI is placed in a floating state, thereby reducing the electric field effect. Unnecessary channel formation can be prevented and the characteristics of the thin film transistor TPT can be improved.

以上、本発明者によってなされた発明を、前記実施例に
基づき具体的に説明したが1本発明は、前記実施例に限
定されるものではなく、その要旨を逸脱しない範囲にお
いて種々変更可能であることは勿論である。
As above, the invention made by the present inventor has been specifically explained based on the above embodiments. However, the present invention is not limited to the above embodiments, and can be modified in various ways without departing from the gist thereof. Of course.

例えば1本発明は、走査信号線及び映像信号線の双方上
に必ずしも設ける必要はなく、走査信号線、映像信号線
の夫々のうち点灯現象が生じる一方上に設けてもよい。
For example, the present invention does not necessarily need to be provided on both the scanning signal line and the video signal line, and may be provided on one of the scanning signal line and the video signal line where the lighting phenomenon occurs.

〔発明の効果〕〔Effect of the invention〕

本願において開示される発明のうち代表的なものによっ
て得られる効果を簡単に説明すれば、下記のとおりであ
る。
A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

液晶表示装置において、映像特性を向上すると共に、液
晶の寿命を向上することができる。
In a liquid crystal display device, it is possible to improve not only the image characteristics but also the life of the liquid crystal.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例であるアクティブ・マトリ
ックス方式のカラー液晶表示装置の液晶表示部の1つの
画素を示す平面図、 第2図は、前記第1図の■−■切断線で切った断面図、 第3図は、前記液晶表示装置の駆動波形図である。 図中、5UB1・・・上部透明ガラス基板、5UB2・
・・下部透明ガラス基板、LC・・・液晶、TPT・・
・薄膜トランジスタ、ITOI・・・透明画素電極、■
TO2・・・共通透明画素電極、GT・・・ゲート電極
、OL・・・走査信号線、SDI・・・ドレイン電極、
SD2・・・ソース電極、DL・・・映像信号線、LS
l・・・遮光膜、LS2・・・遮光用導体膜である。 \、−ニー/ 第1図 第3図
FIG. 1 is a plan view showing one pixel of a liquid crystal display section of an active matrix color liquid crystal display device which is an embodiment of the present invention. FIG. FIG. 3 is a diagram of driving waveforms of the liquid crystal display device. In the figure, 5UB1... upper transparent glass substrate, 5UB2...
・・Lower transparent glass substrate, LC・Liquid crystal, TPT・・
・Thin film transistor, ITOI...transparent pixel electrode, ■
TO2...common transparent pixel electrode, GT...gate electrode, OL...scanning signal line, SDI...drain electrode,
SD2...source electrode, DL...video signal line, LS
l: Light-shielding film, LS2: Light-shielding conductor film. \, -knee/ Figure 1 Figure 3

Claims (1)

【特許請求の範囲】 1、走査信号線と映像信号線との交差部分に複数の画素
が配置され、この複数の画素に対向する位置に液晶を介
在させて共通透明画素電極を配置する液晶表示装置にお
いて、前記走査信号線又は映像信号線と前記液晶との間
に、前記走査信号線又は映像信号線と電気的に分離した
遮光用導体膜を設け、該遮光用導体膜と前記共通透明画
素電極とを電気的に接続したことを特徴とする液晶表示
装置。 2、前記画素は薄膜トランジスタと透明画素電極とで構
成され、前記薄膜トランジスタのチャネル形成領域と前
記液晶との間には遮光膜が設けられており、前記遮光用
導体膜は前記遮光膜と同一導電膜で構成されていること
を特徴とする特許請求の範囲第1項に記載の液晶表示装
置。 3、前記遮光用導体膜、遮光膜の夫々は電気的に分離さ
れていることを特徴とする特許請求の範囲第2項に記載
の液晶表示装置。
[Claims] 1. A liquid crystal display in which a plurality of pixels are arranged at the intersection of a scanning signal line and a video signal line, and a common transparent pixel electrode is arranged at a position facing the plurality of pixels with a liquid crystal interposed therebetween. In the device, a light-shielding conductive film electrically separated from the scanning signal line or video signal line is provided between the scanning signal line or video signal line and the liquid crystal, and the light-shielding conductive film and the common transparent pixel are connected to each other. A liquid crystal display device characterized by electrically connecting electrodes. 2. The pixel is composed of a thin film transistor and a transparent pixel electrode, a light shielding film is provided between the channel formation region of the thin film transistor and the liquid crystal, and the light shielding conductor film is the same conductive film as the light shielding film. A liquid crystal display device according to claim 1, characterized in that the liquid crystal display device is comprised of: 3. The liquid crystal display device according to claim 2, wherein each of the light-shielding conductor film and the light-shielding film are electrically isolated.
JP63135474A 1988-06-03 1988-06-03 Liquid crystal display device Pending JPH01306820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63135474A JPH01306820A (en) 1988-06-03 1988-06-03 Liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63135474A JPH01306820A (en) 1988-06-03 1988-06-03 Liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH01306820A true JPH01306820A (en) 1989-12-11

Family

ID=15152561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63135474A Pending JPH01306820A (en) 1988-06-03 1988-06-03 Liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH01306820A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469622A (en) * 1990-07-10 1992-03-04 Nec Corp Active matrix type liquid crystal display device
EP0569601A1 (en) * 1991-11-29 1993-11-18 Seiko Epson Corporation Liquid crystal display and method of manufacturing same
EP0733929A2 (en) * 1995-03-20 1996-09-25 Sony Corporation Active matrix display device
JPH0943639A (en) * 1995-07-31 1997-02-14 Sony Corp Transmission type display device
KR100574577B1 (en) * 1996-05-08 2006-04-28 샤프 가부시키가이샤 Liquid crystal electro-optical display device
US7126656B2 (en) * 2001-11-16 2006-10-24 Lg.Philips Lcd Co., Ltd. Reflective liquid crystal display device having cholesteric liquid crystal color filter and controlled liquid crystal black matrix in the non-display region
JP2012212941A (en) * 2009-12-04 2012-11-01 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2012212147A (en) * 2000-08-23 2012-11-01 Semiconductor Energy Lab Co Ltd Portable information device
JP2014106322A (en) * 2012-11-27 2014-06-09 Kyocera Corp Liquid crystal display device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469622A (en) * 1990-07-10 1992-03-04 Nec Corp Active matrix type liquid crystal display device
EP0569601A1 (en) * 1991-11-29 1993-11-18 Seiko Epson Corporation Liquid crystal display and method of manufacturing same
EP0569601A4 (en) * 1991-11-29 1994-12-21 Seiko Epson Corp Liquid crystal display and method of manufacturing same.
US5414547A (en) * 1991-11-29 1995-05-09 Seiko Epson Corporation Liquid crystal display device and manufacturing method therefor
SG81187A1 (en) * 1991-11-29 2001-06-19 Seiko Epson Corp Liquid crystal display device and manufacturing method therefor
EP0733929A2 (en) * 1995-03-20 1996-09-25 Sony Corporation Active matrix display device
EP0733929A3 (en) * 1995-03-20 1997-08-20 Sony Corp Active matrix display device
JPH0943639A (en) * 1995-07-31 1997-02-14 Sony Corp Transmission type display device
KR100574577B1 (en) * 1996-05-08 2006-04-28 샤프 가부시키가이샤 Liquid crystal electro-optical display device
JP2012212147A (en) * 2000-08-23 2012-11-01 Semiconductor Energy Lab Co Ltd Portable information device
US7126656B2 (en) * 2001-11-16 2006-10-24 Lg.Philips Lcd Co., Ltd. Reflective liquid crystal display device having cholesteric liquid crystal color filter and controlled liquid crystal black matrix in the non-display region
JP2012212941A (en) * 2009-12-04 2012-11-01 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2015065446A (en) * 2009-12-04 2015-04-09 株式会社半導体エネルギー研究所 Semiconductor device
US9224609B2 (en) 2009-12-04 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US10332996B2 (en) 2009-12-04 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2014106322A (en) * 2012-11-27 2014-06-09 Kyocera Corp Liquid crystal display device

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