JPH0129062B2 - - Google Patents
Info
- Publication number
- JPH0129062B2 JPH0129062B2 JP24385383A JP24385383A JPH0129062B2 JP H0129062 B2 JPH0129062 B2 JP H0129062B2 JP 24385383 A JP24385383 A JP 24385383A JP 24385383 A JP24385383 A JP 24385383A JP H0129062 B2 JPH0129062 B2 JP H0129062B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- current
- dielectric breakdown
- breakdown voltage
- insulator film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 claims description 22
- 238000007689 inspection Methods 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000012528 membrane Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24385383A JPS60136323A (ja) | 1983-12-26 | 1983-12-26 | 絶縁体膜の検査方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24385383A JPS60136323A (ja) | 1983-12-26 | 1983-12-26 | 絶縁体膜の検査方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60136323A JPS60136323A (ja) | 1985-07-19 |
| JPH0129062B2 true JPH0129062B2 (cs) | 1989-06-07 |
Family
ID=17109927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24385383A Granted JPS60136323A (ja) | 1983-12-26 | 1983-12-26 | 絶縁体膜の検査方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60136323A (cs) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3677034D1 (de) * | 1985-03-11 | 1991-02-28 | Nippon Telegraph & Telephone | Methode und geraet zum testen eines integrierten elektronischen bauteils. |
| US4860079A (en) * | 1987-05-29 | 1989-08-22 | Sgs-Thompson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
| US4760032A (en) * | 1987-05-29 | 1988-07-26 | Sgs-Thomson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
| JP5378732B2 (ja) * | 2008-09-04 | 2013-12-25 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体用ウエハの評価方法、半導体ウエハの製造方法及び半導体ウエハの製造工程の評価方法 |
-
1983
- 1983-12-26 JP JP24385383A patent/JPS60136323A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60136323A (ja) | 1985-07-19 |
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