JPH0129062B2 - - Google Patents

Info

Publication number
JPH0129062B2
JPH0129062B2 JP58243853A JP24385383A JPH0129062B2 JP H0129062 B2 JPH0129062 B2 JP H0129062B2 JP 58243853 A JP58243853 A JP 58243853A JP 24385383 A JP24385383 A JP 24385383A JP H0129062 B2 JPH0129062 B2 JP H0129062B2
Authority
JP
Japan
Prior art keywords
voltage
current
dielectric breakdown
breakdown voltage
insulator film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58243853A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136323A (ja
Inventor
Toshiharu Ishida
Tooru Yoshida
Hironobu Okino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58243853A priority Critical patent/JPS60136323A/ja
Publication of JPS60136323A publication Critical patent/JPS60136323A/ja
Publication of JPH0129062B2 publication Critical patent/JPH0129062B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P74/00

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP58243853A 1983-12-26 1983-12-26 絶縁体膜の検査方法 Granted JPS60136323A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58243853A JPS60136323A (ja) 1983-12-26 1983-12-26 絶縁体膜の検査方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243853A JPS60136323A (ja) 1983-12-26 1983-12-26 絶縁体膜の検査方法

Publications (2)

Publication Number Publication Date
JPS60136323A JPS60136323A (ja) 1985-07-19
JPH0129062B2 true JPH0129062B2 (OSRAM) 1989-06-07

Family

ID=17109927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243853A Granted JPS60136323A (ja) 1983-12-26 1983-12-26 絶縁体膜の検査方法

Country Status (1)

Country Link
JP (1) JPS60136323A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0196804B1 (en) * 1985-03-11 1991-01-23 Nippon Telegraph And Telephone Corporation Method and apparatus for testing integrated electronic device
US4760032A (en) * 1987-05-29 1988-07-26 Sgs-Thomson Microelectronics, Inc. Screening of gate oxides on semiconductors
US4860079A (en) * 1987-05-29 1989-08-22 Sgs-Thompson Microelectronics, Inc. Screening of gate oxides on semiconductors
JP5378732B2 (ja) * 2008-09-04 2013-12-25 Sumco Techxiv株式会社 半導体用ウエハの評価方法、半導体ウエハの製造方法及び半導体ウエハの製造工程の評価方法

Also Published As

Publication number Publication date
JPS60136323A (ja) 1985-07-19

Similar Documents

Publication Publication Date Title
US6326792B1 (en) Method and apparatus for lifetime prediction of dielectric breakdown
US5804975A (en) Detecting breakdown in dielectric layers
US7821627B2 (en) Fabrication and test methods and systems
US5793212A (en) Method of measuring the breakdown charge of a dielectric film
JPH0129062B2 (OSRAM)
US8106476B2 (en) Semiconductor die with fuse window and a monitoring window over a structure which indicates fuse integrity
US4904946A (en) Method for evaluating insulating films
US7190186B2 (en) Method and apparatus for determining concentration of defects and/or impurities in a semiconductor wafer
JP5487579B2 (ja) シリコンウェーハの評価方法および製造方法
US3414811A (en) Method and apparatus for testing the resistance characteristics of selfheated electrical resistors
KR100707585B1 (ko) Mos 트랜지스터 소자의 정전용량-전압 특성을 이용한캐리어 농도 분포 측정 자동화 시스템 및 방법
JP3147758B2 (ja) 絶縁層の評価方法
JPH0352247A (ja) 半導体試験装置
KR100489994B1 (ko) 반도체 소자의 불량 검출 방법
JP2861423B2 (ja) 半導体装置の検査方法
JPS60185174A (ja) 絶縁体膜の評価方法
JPS6111465B2 (OSRAM)
JPS63124437A (ja) 半導体素子用絶縁体薄膜の評価装置
JPH1123652A (ja) 半導体装置の試験方法及び半導体装置
JP2584093B2 (ja) 絶縁膜の信頼性評価方法
JPS60115846A (ja) 絶縁薄膜検査方法及び検査装置
JP4735337B2 (ja) 半導体素子の評価方法、ならびに半導体ウェーハの品質評価方法および製造方法
JP2519064B2 (ja) 半導体デバイスのパラメトリック検査方法
US7453280B1 (en) Method for testing semiconductor devices
JPS60115847A (ja) 絶縁体膜の検査方法