JPH0129059B2 - - Google Patents

Info

Publication number
JPH0129059B2
JPH0129059B2 JP19720282A JP19720282A JPH0129059B2 JP H0129059 B2 JPH0129059 B2 JP H0129059B2 JP 19720282 A JP19720282 A JP 19720282A JP 19720282 A JP19720282 A JP 19720282A JP H0129059 B2 JPH0129059 B2 JP H0129059B2
Authority
JP
Japan
Prior art keywords
capillary
height
chip
thin metal
loop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19720282A
Other languages
Japanese (ja)
Other versions
JPS5986233A (en
Inventor
Hitoshi Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57197202A priority Critical patent/JPS5986233A/en
Publication of JPS5986233A publication Critical patent/JPS5986233A/en
Publication of JPH0129059B2 publication Critical patent/JPH0129059B2/ja
Granted legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78343Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/78344Eccentric cams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8503Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01088Radium [Ra]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the occurrence of an abnormal loop upon acceleration of a bonding speed by forming the outer peripheral shape of a Z-shaft cam so as to lower the rising height of a capillary chip after press-bonding the fine metal wires to a semiconductor chip from the top dead point height. CONSTITUTION:A capillary chip 2 is moved to a rising point lower from the top dead point by increasing the radius R2 of the outer periphery of the rising zone to form a loop of suitable height to the radius Ra of the outer periphery of the zone for rising the capillary chip 3 to the top dead point of a Z-shaft cam 30 which is secured to a cam shaft 10 and rotatably driven, thereby setting fine metal wires 16 in height substantially equal to the length required to form a suitable loop 16a.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、ICやLSIなど半導体装置の製造工
程で、半導体チツプの電極と外部リード端子を金
属細線で接続するワイヤボンデイング装置に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding device for connecting electrodes of a semiconductor chip and external lead terminals with thin metal wires in the manufacturing process of semiconductor devices such as ICs and LSIs.

〔従来技術〕[Prior art]

従来のワイヤボンデイング装置は、第1図に要
部を示す構成図のようになつていた。1はわく体
で、X軸、Y軸方向に移動するXYテーブル(図
示は略す)上に取付けられ、ボンデイングヘツド
部を支持する。2はキヤピラリチツプで、キヤピ
ラリ腕3の先端に取付けられている。4はこのキ
ヤピラリ腕3を一方側に取付けた支持部材で、他
方側に伝達腕5を取付けており、わく体1に固着
された支持ピン6に回動自在に支持されている。
7は伝達腕5の他方側に取付けられた取付体で、
他端側にわく体1との間に引張ばね8が装着さ
れ、支持ピン6を支点としてキヤピラリチツプ2
が下降する回動方向にばね圧が加えられている。
9はZ軸カムで、わく体1に取付けられた駆動電
動機(図示は略す)にカム軸10を介し駆動回転
される。11はわく体1に固着された支持ピン1
2に回動自在に支持された伝達レバーで、前端部
に固定した接触子13が上記取付体7上に当接
し、後端部とわく体1との間に引張ばね14が装
着され、取付体7を押下げる方向に回動力が加え
られている。伝導レバー11は後端側にローラ1
5が装着されており、Z軸カム9の外周面に当接
していて上下方向に回動され、接触子13側を上
下方向に移動し、これによりキヤピラリチツプ2
が下降、上昇運動される。16は上方配設のスプ
ール(図示は略す)から引出され、キヤピラリチ
ツプ2に通された金属細線である。
A conventional wire bonding apparatus has a configuration as shown in FIG. 1, the main parts of which are shown. Reference numeral 1 denotes a frame, which is mounted on an XY table (not shown) that moves in the X-axis and Y-axis directions, and supports the bonding head. 2 is a capillary tip, which is attached to the tip of the capillary arm 3. A support member 4 has the capillary arm 3 attached to one side, and a transmission arm 5 is attached to the other side, and is rotatably supported by a support pin 6 fixed to the frame 1.
7 is a mounting body attached to the other side of the transmission arm 5;
A tension spring 8 is attached between the frame body 1 and the other end side, and the capillary tip 2 is attached with the support pin 6 as a fulcrum.
Spring pressure is applied in the direction of rotation in which the
Reference numeral 9 denotes a Z-axis cam, which is driven and rotated by a drive motor (not shown) attached to the frame 1 via a camshaft 10. 11 is a support pin 1 fixed to the frame body 1
A contact 13 fixed to the front end of the transmission lever is rotatably supported by the transmission lever 2, and a contact 13 fixed to the front end abuts on the mounting body 7, and a tension spring 14 is installed between the rear end and the frame 1, A rotational force is applied in a direction that pushes down the body 7. The transmission lever 11 has a roller 1 on the rear end side.
5 is attached, and is in contact with the outer peripheral surface of the Z-axis cam 9 and is rotated in the vertical direction, moving the contactor 13 side in the vertical direction, thereby causing the capillary tip 2
moves downward and upward. Reference numeral 16 denotes a thin metal wire drawn out from a spool (not shown) disposed above and passed through the capillary tip 2.

次に、17はリードフレーム18のダイパツド
部18a上に接着された半導体チツプで、電極と
リードフレーム18の外部リード端子18bとに
金属細線16によりワイヤボンデイングされる。
16aは金属細線16に形成されたループ、19
はリードフレーム18が載せられ加熱する受台で
ある。
Next, a semiconductor chip 17 is bonded onto the die pad portion 18a of the lead frame 18, and wire bonded to the electrode and the external lead terminal 18b of the lead frame 18 using the thin metal wire 16.
16a is a loop formed in the thin metal wire 16, 19
is a pedestal on which the lead frame 18 is placed and heated.

上記従来装置のキヤピラリチツプ2の動作1サ
イクル分を、第2図に順に説明図で示し、Z軸カ
ム9の回転角度とキヤピラリチツプ2の上下移動
量との関係を、第3図に曲線図で示す。θはZ軸
カムの回転角度、Lはキヤピラリチツプ2の移動
高さを表す。
One cycle of the operation of the capillary tip 2 of the above-mentioned conventional device is shown in explanatory diagrams in sequence in FIG. 2, and the relationship between the rotation angle of the Z-axis cam 9 and the amount of vertical movement of the capillary chip 2 is shown in a curved diagram in FIG. . θ represents the rotation angle of the Z-axis cam, and L represents the moving height of the capillary tip 2.

キヤピラリチツプ2のワイヤボンデイング動作
を、第2図及び第3図により説明する。まず、キ
ヤピラリチツプ2は上死点高さH1の位置(第2
図a)から下降し始め(第3図A区間)、第2図
b位置を経て、半導体チツプ17の電極上に着地
し(第2図c、第3図B区間)、金属細線16の
下端に形成されてあるボールが、キヤピラリチツ
プ2により熱圧着(あるいはさらには、超音波圧
接)で接合される。次に、キヤピラリチツプ2が
上昇し始め、同時にXYテーブル(図示は略す)
が移動を始め、キヤピラリチツプ2は上死点高さ
H1まで上昇する(第2図d,e、第3図C前半
区間)。つづいて、キヤピラリチツプ2が下降し
始め、第2図f,g,hのように下降し(第3図
C後半区間)、外部リード端子18b上に着地す
る(第2図i、第3図D区間)。ここで、金属細
線16がキヤピラリチツプ2により熱圧着(ある
いはさらには、超音波圧接)で接合される。これ
により金属細線16のワイヤボンドの山形のルー
プ16aが形成される。ついで、キヤピラリチツ
プ2が上昇を始め、(第2図j)、上昇の途中で金
属細線16をクランプ装置(図示していない)に
より狭み付けることにより引き切り、キヤピラリ
チツプ2の先端から金属細線16が所要長さ残さ
れた状態になり、上死点に上昇復帰する(第2図
k、第3図E区間)。次に、キヤピラリチツプ2
の下方に電気トーチ電極20が入り込み、高電圧
の印加により金属細線16の下端に電気火花を発
生させ、高熱による溶融でボール16bを形成し
(第2図l)、1サイクルのワイヤボンデイングが
完了する。
The wire bonding operation of the capillary chip 2 will be explained with reference to FIGS. 2 and 3. First, capillary tip 2 is placed at the top dead center height H1 (second
It starts descending from the point a) in FIG. 3 (section A in FIG. 3), passes through the position b in FIG. The balls formed in the capillary chip 2 are joined by thermocompression bonding (or even ultrasonic pressure welding). Next, capillary tip 2 begins to rise, and at the same time the XY table (not shown)
begins to move, and capillary tip 2 is at the top dead center height.
It rises to H 1 (Fig. 2 d, e, first half section of Fig. 3 C). Subsequently, the capillary chip 2 begins to descend as shown in FIG. section). Here, the thin metal wire 16 is joined by the capillary chip 2 by thermocompression bonding (or even ultrasonic pressure welding). As a result, a wire bond chevron-shaped loop 16a of the thin metal wire 16 is formed. Then, the capillary tip 2 begins to rise (FIG. 2j), and in the middle of its rise, the thin metal wire 16 is pinched and pulled off by a clamping device (not shown), and the thin metal wire 16 is pulled out from the tip of the capillary tip 2. After the required length remains, it ascends and returns to top dead center (section K in Figure 2 and E in Figure 3). Next, capillary chip 2
An electric torch electrode 20 enters below the metal wire 16, and by applying a high voltage, an electric spark is generated at the lower end of the thin metal wire 16, and the ball 16b is formed by melting due to high heat (Fig. 2l), completing one cycle of wire bonding. do.

第2図と第3図の対応は、a,bがA区間、c
の着地時がB区間で圧着時間となる。d〜hがC
区間で、金属細線16にループが作られる。iが
D区間で着地時間となり、j〜lがE区間で、こ
の間にボール16aが形成される。
The correspondence between Fig. 2 and Fig. 3 is that a, b are A section, c
The time of landing is the crimping time in section B. d~h are C
A loop is made in the thin metal wire 16 in the section. i is the landing time in the D section, and j to l is the E section, during which the ball 16a is formed.

従来のワイヤボンデイング装置は、金属細線1
6の下端にボール16aを形成するために、キヤ
ピラリチツプ2の下方に電気トーチ電極20を入
り込ませるスペースが必要であるので、上死点
H1を高くとつている。この高さH1を上死点の基
準にとつていて、Z軸カム9の上死点に対する外
周部半径Raと、ループ形成に対する外周部半径
R1は同一であり、ループ形成時に上昇する高さ
もH1だけ上昇していた。第2図eに示すように、
H1の長さ分がキヤピラリチツプ2の下端から出
ることになる。この金属細線16のH1の長さは、
ループ16aを作る必要な長さに比べて長過ぎる
ため、特にワイヤボンデイング速度を高速化して
いくと、金属細線16はキヤピラリチツプ2のす
べり、バツクテンシヨンの影響を受けやすくな
り、下降時にキヤピラリチツプ2の上方に戻りき
れない現象が起きることが多くなり、ループ16
aの山形が大きくなり過ぎる異常が発生しやすい
欠点があつた。
Conventional wire bonding equipment uses thin metal wire 1
In order to form the ball 16a at the lower end of the capillary chip 6, a space is required to insert the electric torch electrode 20 under the capillary chip 2.
H 1 is set high. Taking this height H 1 as the reference for the top dead center, the outer circumferential radius R a for the top dead center of the Z-axis cam 9 and the outer circumferential radius for loop formation.
R 1 was the same, and the height increased during loop formation was also increased by H 1 . As shown in Figure 2e,
A length of H1 will come out from the bottom end of capillary tip 2. The length of H1 of this thin metal wire 16 is
Since the length is too long compared to the length required to form the loop 16a, especially when the wire bonding speed is increased, the thin metal wire 16 becomes susceptible to the slippage and back tension of the capillary tip 2, and when lowered, the metal wire 16 becomes susceptible to the slippage and back tension of the capillary tip 2. The phenomenon of not being able to return upwards often occurs, and loop 16
There was a drawback that an abnormality in which the mountain shape of a became too large was likely to occur.

〔発明の概要〕[Summary of the invention]

この発明は、上記従来装置の欠点をなくするた
めになされたもので、半導体チツプへの金属細線
の圧着後のキヤピラリチツプの上昇高さを、上死
点高さより低くなるようにし、かつ、金属細線の
適当なループ形成に必要な長さ分とほぼ同じ距離
だけ上昇させるようにし、ボンデイング速度の高
速化に伴うループ異常の発生を防止したワイヤボ
ンデイング装置を提供することを目的としてい
る。
This invention was made in order to eliminate the above-mentioned drawbacks of the conventional device, and the height of the rise of the capillary chip after the thin metal wire is crimped onto the semiconductor chip is made lower than the height of the top dead center, and the thin metal wire An object of the present invention is to provide a wire bonding apparatus in which the wire is raised by approximately the same distance as the length required to form an appropriate loop, thereby preventing the occurrence of loop abnormalities due to an increase in the bonding speed.

〔発明の実施例〕[Embodiments of the invention]

第4図はこの発明の一実施例によるワイヤボン
デイング装置の要部を示す構成図であり、1〜
8,10〜19,16a,18a,18bは上記
従来装置と同一のもので、説明は省く。
FIG. 4 is a configuration diagram showing the main parts of a wire bonding apparatus according to an embodiment of the present invention.
8, 10 to 19, 16a, 18a, and 18b are the same as those in the conventional device, and their explanation will be omitted.

30はカム軸10に固着され駆動回転されるZ
軸カムであり、キヤピラリチツプ2を上死点に上
昇させる区間の外周部半径Raに対し、適当な高
さのループを形成するための上昇区間の外周部半
径R2は大きくして、キヤピラリチツプ2を上死
点より低い上昇点にし、金属細線16が適当なル
ープ16aを形成するに要する長さにほぼ等しい
高さになるようにしている。
30 is Z fixed to the camshaft 10 and driven and rotated.
It is a shaft cam, and the outer radius R2 of the rising section for forming a loop of an appropriate height is made larger than the outer circumferential radius R a of the section in which the capillary tip 2 is raised to the top dead center. is set at a rising point lower than the top dead center so that the height of the thin metal wire 16 is approximately equal to the length required to form a suitable loop 16a.

上記一実施例の装置のキヤピラリチツプ2の動
作1サイクル分を、第5図に順に説明図で示し、
Z軸カム30の回転角度とキヤピラリチツプ2の
上下移動量との関係を、第6図に曲線図で示す。
One cycle of operation of the capillary chip 2 of the apparatus of the above embodiment is shown in explanatory diagrams in order in FIG.
The relationship between the rotation angle of the Z-axis cam 30 and the amount of vertical movement of the capillary tip 2 is shown in a curve diagram in FIG.

第5図a〜c,i〜lは第2図a〜c,i〜l
と同一であり、第6図A,B,C,D,Eは、第
3図A,B,C,D,Eと同一である。第5図c
のように、金属細線16のボール16aで半導体
チツプ17に圧着後、dに示すように、キヤピラ
リチツプ2は上昇を始めるが、Z軸カム30によ
り高さH2まで上昇する。この高さH2は上死点高
さH1より低く、e〜hに示すキヤピラリチツプ
2の上昇点からの下降と、XYテーブルの移動と
によるループ形成の所要長さにほぼ等しい長さに
してある。
Figure 5 a-c, i-l are from Figure 2 a-c, i-l
6A, B, C, D, and E are the same as FIG. 3A, B, C, D, and E. Figure 5c
After being crimped onto the semiconductor chip 17 by the ball 16a of the thin metal wire 16, the capillary chip 2 begins to rise, as shown in d, until the Z-axis cam 30 raises it to a height H2 . This height H2 is lower than the top dead center height H1 , and is approximately equal to the length required to form a loop due to the descent of the capillary tip 2 from the rising point shown in e to h and the movement of the XY table. be.

これを、第6図にC区間で示し、キヤピラリチ
ツプ2の上昇高さH2は、H2<H1にしている。
This is shown in section C in FIG. 6, and the rising height H2 of the capillary chip 2 is set to satisfy H2 < H1 .

なお、上記実施例では、キヤピラリチツプ2を
上昇、下降させるキヤピラリ腕3の回動運動は、
Z軸カム30の回転を伝導レバー11を介し駆動
伝達したが、これに限らず、例えばZ軸カムの外
周部運動を、キヤピラリ腕の反対側の伝達腕に直
接伝え回動させるようにしてもよい。この場合は
Z軸カムの外周形状は、第4図に示すZ軸カム3
0より異なるものになる。
In the above embodiment, the rotational movement of the capillary arm 3 that raises and lowers the capillary tip 2 is as follows:
Although the rotation of the Z-axis cam 30 is transmitted via the transmission lever 11, the present invention is not limited to this. For example, the movement of the outer circumferential portion of the Z-axis cam may be directly transmitted to the transmission arm on the opposite side of the capillary arm for rotation. good. In this case, the outer peripheral shape of the Z-axis cam is the Z-axis cam 3 shown in FIG.
It will be different than 0.

また、金属細線16を圧着するのに、熱圧着に
超音波圧着を加えてワイヤボンデイングする場合
は、キヤピラリ腕は後端に超音波発振機を取付け
たものにする。
Further, when wire bonding is performed by adding ultrasonic pressure bonding to thermocompression bonding to bond the thin metal wire 16, the capillary arm should have an ultrasonic oscillator attached to its rear end.

〔発明の効果〕〔Effect of the invention〕

この発明は、以上説明したとおり、Z軸カムの
外周形状を変更し、半導体チツプに金属細線を圧
着後、キヤピラリチツプを外部リード端子上に移
動する際、上昇する高さを、ループ形成に必要な
長さとほぼ同じ距離にし、金属細線の先端にボー
ルを形成するに要する上昇高さより低くしたの
で、適当なループが形成されたワイヤボンデイン
グができ、品質が向上され、ループ形成区間の時
間が短縮され(Z軸カムの角度配分が小さくでき
る)、十分な圧着時間をもつたZ軸カムにするこ
とができ、ワイヤボンデイング速度がより高速化
される効果がある。
As explained above, this invention changes the outer circumferential shape of the Z-axis cam and reduces the height required to form a loop when moving a capillary chip onto an external lead terminal after crimping a thin metal wire to a semiconductor chip. Since the distance is approximately the same as the length and is lower than the height required to form a ball at the tip of the thin metal wire, wire bonding with a suitable loop formed is possible, quality is improved, and the time required for loop formation is shortened. (The angular distribution of the Z-axis cam can be made smaller), the Z-axis cam can have a sufficient bonding time, and the wire bonding speed can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のワイヤボンデイング装置の要部
を示す構成図、第2図は第1図のキヤピラリチツ
プの動作1サイクル分を順に示す説明図、第3図
は第1図のZ軸カムの回転角度とキヤピラリチツ
プの上下移動量との関係を示す曲線図、第4図は
この発明の一実施例によるワイヤボンデイング装
置の要部を示す構成図、第5図は第4図のキヤピ
ラリチツプの動作1サイクル分を順に示す説明
図、第6図は第4図のZ軸カムの回転角度とキヤ
ピラリチツプの上下移動量との関係を示す曲線図
である。 2……キヤピラリチツプ、3……ボンデイング
腕、5……伝達腕、11……伝導レバー、16…
…金属細線、16a……ループ、17……半導体
チツプ、18b……外部リード端子、30……Z
軸カム。なお、図中同一符号は同一又は相当部分
を示す。
Figure 1 is a configuration diagram showing the main parts of a conventional wire bonding device, Figure 2 is an explanatory diagram sequentially showing one cycle of the operation of the capillary chip in Figure 1, and Figure 3 is a diagram showing the rotation of the Z-axis cam in Figure 1. A curve diagram showing the relationship between the angle and the amount of vertical movement of the capillary chip, FIG. 4 is a configuration diagram showing the main parts of a wire bonding device according to an embodiment of the present invention, and FIG. 5 shows one cycle of operation of the capillary chip in FIG. 4. FIG. 6 is a curve diagram showing the relationship between the rotation angle of the Z-axis cam in FIG. 4 and the amount of vertical movement of the capillary tip. 2... Capillary chip, 3... Bonding arm, 5... Transmission arm, 11... Conduction lever, 16...
...Thin metal wire, 16a...Loop, 17...Semiconductor chip, 18b...External lead terminal, 30...Z
axis cam. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] 1 ボンデイング腕の先端に装着してあるキヤピ
ラリチツプを上昇、下降させ、半導体チツプと外
部リード端子とを金属細線によりワイヤボンドす
る装置において、上記半導体チツプにボンデイン
グし次の上記外部リード端子上へ移動する際、上
記キヤピラリチツプの上昇高さを、上記金属細線
の適当なループ形成に必要な長さ分とほぼ同じ距
離だけ下死点から上昇させるようにし、金属細線
の先端にボールを形成するに要する上昇高さより
低くしたことを特徴とするワイヤボンデイング装
置。
1. In a device that wire-bonds a semiconductor chip and an external lead terminal with a thin metal wire by raising and lowering a capillary chip attached to the tip of a bonding arm, the capillary chip is bonded to the semiconductor chip and moved to the next external lead terminal. At this time, the height of the capillary tip is raised from the bottom dead center by approximately the same distance as the length required to form an appropriate loop of the thin metal wire, and the height required to form a ball at the tip of the thin metal wire is increased. A wire bonding device characterized by being lower than the height.
JP57197202A 1982-11-08 1982-11-08 Wire bonding device Granted JPS5986233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57197202A JPS5986233A (en) 1982-11-08 1982-11-08 Wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57197202A JPS5986233A (en) 1982-11-08 1982-11-08 Wire bonding device

Publications (2)

Publication Number Publication Date
JPS5986233A JPS5986233A (en) 1984-05-18
JPH0129059B2 true JPH0129059B2 (en) 1989-06-07

Family

ID=16370509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57197202A Granted JPS5986233A (en) 1982-11-08 1982-11-08 Wire bonding device

Country Status (1)

Country Link
JP (1) JPS5986233A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2725102B2 (en) * 1991-10-17 1998-03-09 株式会社カイジョー Wire bonding method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501648A (en) * 1973-05-07 1975-01-09
JPS571238A (en) * 1980-06-03 1982-01-06 Fujitsu Ltd Bonding of wire

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501648A (en) * 1973-05-07 1975-01-09
JPS571238A (en) * 1980-06-03 1982-01-06 Fujitsu Ltd Bonding of wire

Also Published As

Publication number Publication date
JPS5986233A (en) 1984-05-18

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