JPH07235562A - Wedge bonding equipment - Google Patents
Wedge bonding equipmentInfo
- Publication number
- JPH07235562A JPH07235562A JP6051185A JP5118594A JPH07235562A JP H07235562 A JPH07235562 A JP H07235562A JP 6051185 A JP6051185 A JP 6051185A JP 5118594 A JP5118594 A JP 5118594A JP H07235562 A JPH07235562 A JP H07235562A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- tool
- bonding tool
- wedge
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78313—Wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/78822—Rotational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体チップ上の電極
とパッケージ外部への引出し用リードとの間をボンディ
ングワイヤーで接続するときに用いるウエッジボンディ
ング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wedge bonding apparatus used for connecting an electrode on a semiconductor chip and a lead for leading to the outside of the package with a bonding wire.
【０００２】[0002]
【従来の技術】従来のウエッジボンディング装置におけ
る、ボンディングツールとその軌跡を図４に示す。図４
において、１はウエッジボンダー用ボンディングツール
（ａ〜ｃはボンディングツールの軌跡を示す）、２はボ
ンディングワイヤー、３は半導体チップ、４はリードフ
レームのインナーリードである。ここで、ボンディング
ツール１は半導体チップ３に直上から高速で降下し、半
導体チップ３にボンディングワイヤー２が接地する直前
に降下速度を落とし（この位置をサーチレベルと云
う）、半導体チップ３にボンディングワイヤー２が接す
るまで降下し、所定の圧力と超音波エネルギーと（場合
によっては）熱エネルギーにより、ボンディングワイヤ
ー２は半導体チップ３に溶着され、ファーストボンド
（１stボンド）を終了する。１stボンド終了後、ボンデ
ィングツール１は上昇しながら、１stボンド時のボンデ
ィングワイヤー２の延長線上を、２ndボンド地点である
インナーリード４へと向かう。ボンディングツール１が
インナーリード４直上に到達した後は、１stボンドと同
様にボンディングを行い（ボンディング条件の差異はあ
る）、ボンディングワイヤー２をボンディングツール１
の上方でクランプすることにより、ボンディングツール
１が上昇する際にボンディングワイヤー２を２ndボンド
地点で、引き千切り全ボンディング工程を終了する。2. Description of the Related Art FIG. 4 shows a bonding tool and its trajectory in a conventional wedge bonding apparatus. Figure 4
In the figure, 1 is a bonding tool for wedge bonder (a to c show loci of the bonding tool), 2 is a bonding wire, 3 is a semiconductor chip, and 4 is an inner lead of a lead frame. Here, the bonding tool 1 descends at a high speed from directly above the semiconductor chip 3, and the descending speed is reduced immediately before the bonding wire 2 is grounded to the semiconductor chip 3 (this position is called a search level), and the bonding wire 1 is bonded to the semiconductor chip 3. The bonding wire 2 is welded to the semiconductor chip 3 by a predetermined pressure, ultrasonic energy, and (in some cases) thermal energy, and the first bond (1st bond) is completed. After the completion of the 1st bond, the bonding tool 1 rises and heads on the extension line of the bonding wire 2 at the 1st bond to the inner lead 4 which is the 2nd bond point. After the bonding tool 1 reaches directly above the inner lead 4, bonding is performed in the same manner as the 1st bond (the bonding conditions are different), and the bonding wire 2 is connected to the bonding tool 1.
Clamping above the wire ends the bonding wire 2 at the 2nd bond point when the bonding tool 1 rises and completes the whole cutting process.
【０００３】このウエッジボンディングはボールボンデ
ィングと比較し、電気トーチや水素トーチによって、
ボールを形成しにくいAl等の材料でも、ボンディング可
能である、半導体チップ上のボンディングパッドが小
さくてよい、等のメリットがある。Compared with ball bonding, this wedge bonding uses an electric torch or hydrogen torch.
There are advantages such as that bonding can be performed even with a material such as Al that is difficult to form balls, and that the bonding pad on the semiconductor chip can be small.
【０００４】[0004]
【発明が解決しようとする課題】以上に述べたように、
従来のウエッジボンディング装置では、ボンディングツ
ールの運動方向は絶えず一定であり、半導体チップから
放射状にワイヤリングを行う際は、リードフレームかボ
ンディングヘッドを回転しながらボンディングを行わね
ばならず、ボンディングに要する時間をロスすると云う
デメリットがある。[Problems to be Solved by the Invention] As described above,
In the conventional wedge bonding device, the movement direction of the bonding tool is constantly constant, and when performing radial wiring from the semiconductor chip, it is necessary to perform the bonding while rotating the lead frame or the bonding head, and the time required for the bonding is reduced. There is a disadvantage that it is lost.
【０００５】本発明は上記事情に鑑みてなされたもので
あり、ボンディングを高速に行うことができるウエッジ
ボンディング装置を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a wedge bonding apparatus capable of performing bonding at high speed.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
の本発明のウエッジボンディング装置は、ボンディング
ツールをボールボンディングのキャピラリーの様な円筒
形状にすると共に、更に１stボンド時にボンディングツ
ールを斜め上方から降下する様にしたものである。In order to achieve the above object, a wedge bonding apparatus of the present invention has a bonding tool having a cylindrical shape such as a capillary for ball bonding, and further, the bonding tool is slanted from above at the first bonding. It is designed to descend.
【０００７】[0007]
【作用】この様な構成にすることにより、ボンディング
ツール先端から突出しているボンディングワイヤーを、
半導体チップの上のボンディングパッドに押さえ付ける
ことができ、円筒形状のボンディングツールを用いて、
任意方向へのウエッジボンドによるワイヤリングが可能
となる。[Operation] With this structure, the bonding wire protruding from the tip of the bonding tool is
It can be pressed onto the bonding pad on the semiconductor chip, using a cylindrical bonding tool,
Wiring by wedge bonding in any direction is possible.
【０００８】[0008]
【実施例】図１は、本発明の一実施例であるウエッジボ
ンディング装置を用いて１stボンドを行った状態を示す
説明図であり、２はボンディングワイヤー、３は半導体
チップ、４はリードフレームのインナーリード、５は円
筒形状のボンディングツールである。ここで、図中ｄ〜
ｇはボンディングツールの軌跡を示す。ボンディングツ
ール５は、ボンディングパッドＰａｔ上の１stボンド地
点から距離ＸだけボンディングパッドＰａｔの中心から
オフセンターにした位置で図５の符号５ａで示すよう
に、サーチレベルまで垂直に降下し（ｄ）、後に１stボ
ンド地点へ向かい斜めに降下する（ｅ）。図５の符号５
ｂで示すボンディングツールは１stボンド地点までの斜
め移動の途中を示す図である。ボンディングツール５の
先端にはボンディングワイヤー２が所定量突出してお
り、ボンディングツール５が斜めに降下することによ
り、先ずボンディングワイヤー２が半導体チップ３の表
面に接触し、斜めに降下する過程で図５の符号５ｂで示
すようにボンディングワイヤー２は横に倒され、ボンデ
ィングツール５の下方へ回り込む。この状態のまま更に
斜めに降下することにより、ボンディングツール５はボ
ンディングワイヤー２を確実に、半導体チップ３のボン
ディングパッドに押し付けることが可能となり、最終的
に図１に示す位置で１stボンドが終了する。これ以降
は、従来のウエッジボンディングと同様に符号ｆ、ｇで
示す経路でボンディングツール５を移動させ２ndボンデ
ィングを行いワイヤリングを完成できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an explanatory view showing a state where 1st bonding is performed by using a wedge bonding apparatus which is an embodiment of the present invention, 2 is a bonding wire, 3 is a semiconductor chip, and 4 is a lead frame. Inner leads 5 are cylindrical bonding tools. Here, d to
g indicates the trajectory of the bonding tool. The bonding tool 5 vertically descends to the search level (d), as indicated by reference numeral 5a in FIG. 5, at a position off center from the center of the bonding pad Pat by a distance X from the first bond point on the bonding pad Pat. Later, it descends diagonally toward the 1st bond point (e). Reference numeral 5 in FIG.
The bonding tool indicated by b is a diagram showing the middle of diagonal movement to the 1st bond point. The bonding wire 2 protrudes from the tip of the bonding tool 5 by a predetermined amount. When the bonding tool 5 descends obliquely, the bonding wire 2 first contacts the surface of the semiconductor chip 3 and descends obliquely. As indicated by reference numeral 5b, the bonding wire 2 is tilted sideways and wraps around below the bonding tool 5. By further descending obliquely in this state, the bonding tool 5 can surely press the bonding wire 2 against the bonding pad of the semiconductor chip 3, and finally the 1st bond is completed at the position shown in FIG. . After this, similarly to the conventional wedge bonding, the bonding tool 5 is moved along the paths indicated by reference signs f and g to perform the second bonding, thereby completing the wiring.
【０００９】本実施例のボンディングツール５は図１に
示すように中心にボンディングワイヤーが挿入される貫
通孔を有する円筒形状、すなわちボールボンダー用キャ
ピラリーと同様の形状をしているので、ボンディングツ
ール５が水平方向のどの方向に移動しても円周方向のい
ずれかの位置でボンディングワイヤー２を押しつけるこ
とができるので任意の方向へワイヤリングすることがで
き、高速のウェッジボンディング装置の供給が可能とな
る。As shown in FIG. 1, the bonding tool 5 of this embodiment has a cylindrical shape having a through hole into which a bonding wire is inserted in the center, that is, a shape similar to that of a ball bonder capillary. Since the bonding wire 2 can be pressed at any position in the circumferential direction regardless of which direction it moves in the horizontal direction, the wire can be wired in any direction and a high-speed wedge bonding device can be supplied. .
【００１０】図２は、図１に示すボンディングツールの
動作を行わせる為の機構部を説明する説明図であり、図
２において符号５は円筒形状のキャピラリーを備えたボ
ンディングツール、６は超音波発生装置、７は上下機
構、８はＸＹテーブルを示す。（尚、図２では、クラン
パー機構や加圧機構等の、ワイヤーボンディング装置に
必要な基本的機構は従来と同様の機構であるので省略し
てある。）この様に構成されたユニットにおいて、上下
機構７とＸＹテーブル８を同時に駆動することにより、
ボンディングツール５は斜めに降下することが可能とな
る。これにより、ボンディングヘッドを回転することな
く、半導体チップとインナーリードとを放射状にワイヤ
リングを行うことができるので、従来のものに比べてボ
ンディングを高速に行うことができる。また、本構成に
よれば、上下速度と水平速度の比をコントロールするこ
とにより、多様な着地軌跡が実現できる。FIG. 2 is an explanatory view for explaining a mechanical portion for performing the operation of the bonding tool shown in FIG. 1. In FIG. 2, reference numeral 5 is a bonding tool having a cylindrical capillary, and 6 is an ultrasonic wave. A generator, 7 is a vertical mechanism, and 8 is an XY table. (It should be noted that, in FIG. 2, basic mechanisms such as a clamper mechanism and a pressure mechanism necessary for the wire bonding apparatus are omitted because they are the same as the conventional ones.) By simultaneously driving the mechanism 7 and the XY table 8,
The bonding tool 5 can be lowered obliquely. As a result, the semiconductor chip and the inner leads can be radially wired without rotating the bonding head, so that the bonding can be performed at a higher speed than the conventional one. Further, according to this configuration, various landing loci can be realized by controlling the ratio between the vertical speed and the horizontal speed.
【００１１】図３は図１に示すボンディングツールの動
作を行わせる為の機構部の他の実施例を説明する説明図
であり、図において符号５は円筒形状のボンディングツ
ール、６は超音波発生装置、７は上下機構、９は該超音
波発生装置６をアーム１０の軸芯を中心として回転させ
るための回転機構である（図３では、クランパー機構や
加圧機構等の、ワイヤーボンディング装置に必要な基本
的機構は図２同様に省略してある）。この様に構成され
たユニットにおいて、上下機構７と回転機構９を同時に
駆動することにより、ボンディングツール５を傾斜させ
た状態から垂直状態に変位させながら降下させることが
できる。これにより、ボンディングワイヤーは上記と同
様に折曲される。尚、上記の変位は降下を一端止めてか
ら行うようにしてもよい。FIG. 3 is an explanatory view for explaining another embodiment of the mechanical portion for performing the operation of the bonding tool shown in FIG. 1. In the drawing, reference numeral 5 is a cylindrical bonding tool, and 6 is ultrasonic wave generation. An apparatus, 7 is an up-and-down mechanism, and 9 is a rotating mechanism for rotating the ultrasonic generator 6 around the axis of the arm 10 (in FIG. 3, a wire bonding device such as a clamper mechanism or a pressure mechanism is used). The necessary basic mechanism is omitted as in FIG. 2). In the unit configured as described above, by simultaneously driving the up-down mechanism 7 and the rotating mechanism 9, the bonding tool 5 can be lowered while being displaced from the tilted state to the vertical state. As a result, the bonding wire is bent as described above. The displacement may be performed after the descent is stopped.
【００１２】本発明は上記の実施例に限定されるもので
はなくその要旨の範囲内において種々の変形が可能であ
る。The present invention is not limited to the above-described embodiments, but various modifications can be made within the scope of the invention.
【００１３】[0013]
【発明の効果】以上の様に本発明によれば、任意の方向
へワイヤリングすることができ、しかも高速のウエッジ
ワイヤーボンディング装置を提供することができる。As described above, according to the present invention, it is possible to provide a wedge wire bonding apparatus capable of performing wiring in any direction and high speed.
【図１】本発明の一実施例であるウエッジボンダー装置
を用いて１stボンドを行った状態を示す説明図である。FIG. 1 is an explanatory diagram showing a state where 1st bonding is performed using a wedge bonder device which is an embodiment of the present invention.
【図２】図１に示すボンディングツールの動作を行わせ
る為の機構部を説明する説明図である。FIG. 2 is an explanatory diagram illustrating a mechanical portion for operating the bonding tool shown in FIG.
【図３】図１に示すボンディングツールの動作を行わせ
る為の機構部の他の実施例を説明する説明図である。FIG. 3 is an explanatory view illustrating another embodiment of a mechanism section for performing the operation of the bonding tool shown in FIG.
【図４】従来のウエッジボンドの説明図である。FIG. 4 is an explanatory diagram of a conventional wedge bond.
【図５】図１に示すボンディングツールの動作を説明す
るための図である。5 is a diagram for explaining the operation of the bonding tool shown in FIG. 1. FIG.
１ 従来のウエッジボンド用ボンディングツール ２ ボンディングワイヤー ３ａ 半導体チップ ４ インナーリード ５ 円筒形状のボンディングツール（キャピラリー） ６ 超音波発生装置 ７ 上下機構 ８ ＸＹテーブル ９ 回転機構 1 Conventional Wedge Bonding Bonding Tool 2 Bonding Wire 3a Semiconductor Chip 4 Inner Lead 5 Cylindrical Bonding Tool (Capillary) 6 Ultrasonic Generator 7 Vertical Mechanism 8 XY Table 9 Rotation Mechanism
Claims (4)
リードフレームのインナーリードを電気的に接続するウ
エッジボンディング装置において、ボンディングワイヤ
ーが挿入される貫通孔を有する円筒形のボンディングツ
ールと、該ボンディングツールを該ボンディングパッド
に着地する際に、該ボンディングツールを斜め上方から
降下させる移動機構を備えたことを特徴とするウエッジ
ボンディング装置。1. In a wedge bonding apparatus for electrically connecting a bonding pad on a semiconductor chip and an inner lead of a lead frame, a cylindrical bonding tool having a through hole into which a bonding wire is inserted, and the bonding tool A wedge bonding apparatus comprising a moving mechanism for lowering the bonding tool obliquely from above when landing on a bonding pad.
ボンディングツールの垂直方向の駆動を行う垂直駆動部
と水平方向の駆動を行う水平駆動部を備え、該ボンディ
ングツールの垂直方向駆動と水平方向駆動を同期させる
ことにより、該ボンディングツールを斜め上方から降下
させることを特徴とするウエッジボンディング装置。2. The moving mechanism according to claim 1, further comprising a vertical drive unit for vertically driving the bonding tool and a horizontal drive unit for horizontally driving the bonding tool. A wedge bonding apparatus characterized by lowering the bonding tool obliquely from above by synchronizing directional driving.
リードフレームのインナーリードを電気的に接続するワ
イヤーボンディング装置において、ボンディングワイヤ
ーが挿入される貫通孔を有する円筒形のボンディングツ
ールと、該ボンディングツールを該ボンディングパッド
に着地する際に、該ボンディングツールを傾斜させた状
態から垂直状態に変位させる移動機構を備えたことを特
徴とするウエッジボンディング装置。3. A wire bonding apparatus for electrically connecting a bonding pad on a semiconductor chip and an inner lead of a lead frame, the cylindrical bonding tool having a through hole into which a bonding wire is inserted, and the bonding tool. A wedge bonding apparatus comprising a moving mechanism for displacing the bonding tool from a tilted state to a vertical state when landing on a bonding pad.
ボンディングツールを支持するアームを垂直方向に駆動
する垂直駆動部と、該アームを該アームの軸芯を中心と
して回転する回転機構を備え、該アームを垂直方向駆動
と同期させ回転することにより、該ボンディングツール
を旋回させながら、降下させることを特徴とするウエッ
ジボンディング装置。4. The moving mechanism according to claim 3, further comprising a vertical drive unit that vertically drives an arm that supports the bonding tool, and a rotation mechanism that rotates the arm about an axis of the arm. A wedge bonding apparatus characterized in that the arm is lowered while rotating the bonding tool by rotating the arm in synchronization with vertical driving.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6051185A JPH07235562A (en) | 1994-02-24 | 1994-02-24 | Wedge bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6051185A JPH07235562A (en) | 1994-02-24 | 1994-02-24 | Wedge bonding equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07235562A true JPH07235562A (en) | 1995-09-05 |
Family
ID=12879807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6051185A Pending JPH07235562A (en) | 1994-02-24 | 1994-02-24 | Wedge bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07235562A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015125671A1 (en) * | 2014-02-21 | 2015-08-27 | 株式会社新川 | Method for producing semiconductor device, and wire-bonding device |
-
1994
- 1994-02-24 JP JP6051185A patent/JPH07235562A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015125671A1 (en) * | 2014-02-21 | 2015-08-27 | 株式会社新川 | Method for producing semiconductor device, and wire-bonding device |
| CN106233446A (en) * | 2014-02-21 | 2016-12-14 | 株式会社新川 | The manufacture method of semiconductor device and throwing device |
| JPWO2015125671A1 (en) * | 2014-02-21 | 2017-03-30 | 株式会社新川 | Semiconductor device manufacturing method and wire bonding apparatus |
| US9922952B2 (en) | 2014-02-21 | 2018-03-20 | Shinkawa Ltd. | Method for producing semiconductor device, and wire-bonding apparatus |
| CN106233446B (en) * | 2014-02-21 | 2019-01-01 | 株式会社新川 | The manufacturing method and throwing device of semiconductor device |
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