JPH01283842A - Semiconductor device - Google Patents

Abstract

PURPOSE:To arrange the constitution such that the stress caused by thermal deformation of a film is not applied to a junction between a bump and an end of an inner lead so as to prevent separation of the junction by minimizing the area of a bonding part between an inner lead and a film. CONSTITUTION:This is a tape bonding type semiconductor device in which the end of an inner lead 2 and the bump 1 a of a semiconductor element 1 are bonded to mount a semiconductor element 1, wherein the inner lead and the film 3 are not bonded over the whole faces and the area of its bonding part is made small to the atmost. This way, since the bonding part of the inner lead 3 to the film 3 is made in the minimum area, it can prevent separation of the junction between the bump 1a and the end of the inner lead 2 resulting in breaking of wire even if deformation arises in the film 3 by heating.

Description

[Detailed Description of the Invention] [Summary] Regarding the improvement of the bond between the inner lead and the film of a tape bonding type semiconductor device, the inner lead is not affected by the deformation of the film, which can be simply and easily manufactured. ] ゛Aiming at providing an AB type semiconductor device, inner leads corresponding to the bumps of the semiconductor element are repeatedly formed on a tape-like film, and the tips of the inner leads and the bumps of the semiconductor element are formed repeatedly. The semiconductor device is a tape bonding type semiconductor device in which the semiconductor element is mounted by bonding the inner leads and the film, and the inner lead and the film are not bonded over the entire surface, but the bonded portion is configured to have a minimum area.

[Industrial application field]

The present invention relates to a semiconductor device, and particularly to an improvement in the adhesive portion between an inner lead and a film of a tape bonding type semiconductor device.

Various methods are used to assemble semiconductor devices, one of which is to overlay conductor inner leads repeatedly formed on a tape-like film and the corresponding portions of the bumps on the semiconductor element, and heat them. Tape automated bonding, which connects multiple wires at the same time by crimping
ng, hereinafter abbreviated as TAB. ).

In this method, inner leads are formed by adhering the entire surface to a polyimide film.

In the manufacturing process of semiconductor devices, as part of the reliability test of semiconductor devices, a test called burn-in is conducted in which semiconductor devices are heated to a high temperature. At this time, the film is deformed due to heat, and this deformation also deforms the inner lead, which is completely adhered to the film, resulting in deformation of the inner lead, cutting of the inner lead, or peeling off of the bump at the joint between the inner lead and the bump. Peeling of the inner lead plating, etc. has occurred.

Under the above circumstances, there is a demand for a semiconductor device that can prevent failures caused by distortion that occurs in the film during heating and cooling.

[Conventional technology]

The structure of a conventional TAB type semiconductor device will be explained with reference to FIGS. 2 and 3.

FIG. 2 (al is a plan view showing the shape of the TAB type semiconductor device, and FIG. 2 is a side view) is a side view.

FIG. 3 is a side view showing the shape of the main parts of a conventional TAB type semiconductor device.

In FIG. 2, inner leads 2 corresponding to bumps 1a of 150 μm square and 25 μm thick provided around the semiconductor element 1 are repeatedly formed on a tape-shaped film 3 made of polyimide and having a thickness of 125 μm. .

This inner lead 2 has a thickness of 30 μm and a width of 100 μm.
This is a copper foil with a thickness of 0.5μI and tin plating.

The bumps 1a of the semiconductor element 1 are overlapped with the tips of the inner leads 2 and bonded by heating and pressurizing.

When such a semiconductor device is subjected to a high-temperature burn-in test, the inner leads 2 are bonded to the film 3 over the entire surface, so that the state shown in FIG. Due to this deformation, peeling of the bumps 1a, peeling off of the plating of the inner leads 2, etc. occur at the joints between the inner leads 2 and the bumps 1a of the semiconductor element 1, resulting in disconnection.

[Problem to be solved by the invention]

In the conventional TAB type semiconductor device described above, when the semiconductor device is subjected to a burn-in test, peeling of the bumps, peeling off of plating on the inner leads, etc. at the joints between the inner leads and the bumps of the semiconductor element due to film deformation occur. This causes problems such as poor contact and disconnection.

In view of the above-mentioned circumstances, the present invention aims to provide a TAB type semiconductor device which can be simply and easily manufactured and whose inner leads are hardly affected by film deformation.

[Means to solve the problem]

The above problem is solved by repeatedly forming inner leads corresponding to the bumps of the semiconductor element on a tape-like film, and bonding the tips of the inner leads and the bumps of the semiconductor element to the tape on which the semiconductor element is mounted. The problem is solved by a bonding type semiconductor device according to the present invention, in which the inner lead and the film are not bonded over the entire surface, and the bonded portion has a minimum area.

[Effect]

That is, in the present invention, since the area of the bonded portion of the inner lead to the film is minimized, even if the film is deformed by heating, the bond between the bump of the semiconductor element and the tip of the inner lead will peel off and disconnect. This makes it possible to prevent

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 to 3.

The semiconductor device of the present invention has the same shape as the conventional semiconductor device shown in FIG. 2, except that the adhesive portion between the inner lead 2 and the film 3 has a minimum area.

FIG. 1 shows four embodiments of the bonding portion between the inner lead 2 and the film 3, which is a feature of the present invention.

Figure 1 (al is the adhesive part divided into two parts, Figure 1 (b) is the adhesive part divided into two parts, and the inner lead 2 between them.
It is made to have some slack.

In FIG. 1 fc), the inner lead is bonded to the film 3 only at the end opposite to the joint between the inner lead 2 and the bump 1a.

In FIG. 1fd), the junction between the inner lead 2 and the bump 1a in FIG. 1C is moved further away from the surface of the film 3, so that the semiconductor element 1 is located on the same plane as the surface of the film 3. This is what I did.

By making the area of the bonded portion between the inner lead 2 and the film 3 as small as possible in this way, it is possible to prevent the influence of thermal deformation of the film 3 from spreading to the inner lead.

〔Effect of the invention〕

As is clear from the above description, according to the present invention, by minimizing the area of the bonding area between the inner lead and the film, it is possible to attach the film to the bonding area between the bump of the semiconductor element and the tip of the inner lead. It is possible to prevent the stress caused by thermal deformation from being applied, and it is possible to prevent the bond between the bump of the semiconductor element and the tip of the inner lead from peeling off, which reduces the assembly yield of semiconductor devices due to this peeling. It has advantages such as being able to prevent a decrease in the temperature, and can be expected to have a significant economical and reliability improvement effect, making it extremely useful industrially.

[Brief explanation of the drawing]

FIG. 1 is a side view showing the bonding method between the inner lead and film of various embodiments of the present invention, FIG. 2 is a diagram showing the shape of a TAB type semiconductor device, and FIG. 3 is a diagram showing the main parts of a conventional semiconductor device. FIG. In the figure, 1 is a semiconductor element, 1a is a bump, 2 is an inner lead, 3 is a film, and 4 is an adhesive. 1- (Al@l Example ('b1° 1st Example + e + 3rd Example + d + 4th Example 1J41 Figure (B) Top View Mountain) Side View Showing the Shape of a TAB Type Semiconductor Device Figure 2 (al) Side view showing the normal state (b) Side view showing the heated and deformed state Figure 3 Side view showing the shape of the main parts of a conventional semiconductor device

Claims (1)

[Claims] Inner leads (2) corresponding to the bumps (1a) of the semiconductor element (1) are repeatedly formed on a tape-like film (3), and the tips of the inner leads (2) and the bumps (1a) of the semiconductor element (1) are formed repeatedly. A tape bonding type semiconductor device in which the semiconductor element (1) is mounted by bonding the semiconductor element (1) with a bump (1a), wherein the inner lead (2) and the film (3) are not bonded on the entire surface, but only on the bonded portion. A semiconductor device characterized by having a minimum area.