JP2002329740A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JP2002329740A
JP2002329740A JP2001131455A JP2001131455A JP2002329740A JP 2002329740 A JP2002329740 A JP 2002329740A JP 2001131455 A JP2001131455 A JP 2001131455A JP 2001131455 A JP2001131455 A JP 2001131455A JP 2002329740 A JP2002329740 A JP 2002329740A
Authority
JP
Japan
Prior art keywords
wire
bonding
wedge
bonded
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001131455A
Other languages
Japanese (ja)
Other versions
JP3945184B2 (en
Inventor
Junya Koyashiki
純也 古屋敷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001131455A priority Critical patent/JP3945184B2/en
Publication of JP2002329740A publication Critical patent/JP2002329740A/en
Application granted granted Critical
Publication of JP3945184B2 publication Critical patent/JP3945184B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
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Abstract

PROBLEM TO BE SOLVED: To provide a wire bonding method that prevents break of wire made thin through wedge bonding. SOLUTION: When ball bonding from above a junction area 2 of a wire 1 bonded a lead frame 4, the junction area 2 can be made thick by forming a bonding area 3 performing ball bonding including a wire diameter ϕ portion of the wire 1, and break of the wire wedge bonded has been is prevented because a region where the wire is joined together becomes wide.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、例えば半導体発光
素子をリードフレームにワイヤボンディングして樹脂封
止した発光装置等の電子部品に係り、特にボンディング
されるワイヤの断線を防ぐワイヤボンディング方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component such as a light emitting device in which a semiconductor light emitting element is resin-sealed by wire bonding a semiconductor light emitting element to a lead frame, and more particularly to a wire bonding method for preventing disconnection of a wire to be bonded.

【０００２】[0002]

【従来の技術】例えば半導体発光素子を用いた発光ダイ
オードの分野では、リードフレームやプリント配線基板
等の導通材に発光素子を実装する工程において、電気的
導通のためにＡｕ線等を利用したワイヤボンディングが
行われる。この工程では、発光素子の上面に電極がある
場合（第１ボンド点）では、電極および半導体層へのダ
メージを抑えるため、電極の表面にワイヤを小さな塊と
して付着させて電極に接合するボールボンディングが行
われる。そして、リードフレーム側（第２ボンド点）で
は、リードフレームの表面にワイヤを押しつけながらカ
ットするウェッジボンディングとすることが通常であ
る。2. Description of the Related Art For example, in the field of light-emitting diodes using semiconductor light-emitting elements, in the process of mounting the light-emitting elements on a conductive material such as a lead frame or a printed circuit board, a wire using an Au wire or the like for electrical conduction is used. Bonding is performed. In this step, when an electrode is provided on the upper surface of the light emitting element (first bonding point), ball bonding is performed in which a wire is attached to the surface of the electrode as a small lump and bonded to the electrode in order to suppress damage to the electrode and the semiconductor layer. Is performed. On the lead frame side (second bonding point), wedge bonding is usually performed to cut the wire while pressing the wire against the surface of the lead frame.

【０００３】このようにリードフレームやプリント配線
基板等の導通材との接続をワイヤボンディングで行う場
合、使用するワイヤと導通材との材質が異なると、特に
ウェッジボンディング部において接着の信頼性が著しく
低下するという問題がある。この点を解消するものとし
て、特開平１１−１６３０２６号公報に記載のワイヤボ
ンディング方法が知られている。この公報に記載のワイ
ヤボンディング方法は、ワイヤと第１ボンド点および第
２ボンド点の接着を行った後、第２ボンド点の接着によ
り生じた接合部の上に、ボールボンディング方式の接着
法により、ワイヤと同一金属よりなる金属ボールを接着
するというものである。As described above, when a connection with a conductive material such as a lead frame or a printed wiring board is performed by wire bonding, if the materials used for the wire and the conductive material are different from each other, the reliability of the bonding is remarkable especially at a wedge bonding portion. There is a problem of lowering. To solve this problem, a wire bonding method described in Japanese Patent Application Laid-Open No. H11-163026 is known. According to the wire bonding method described in this publication, after bonding a wire to a first bonding point and a second bonding point, a bonding method of a ball bonding method is performed on a bonding portion formed by bonding the second bonding point. And bonding a metal ball made of the same metal as the wire.

【０００４】図３は特開平１１−１６３０２６号公報に
記載のワイヤボンディング方法に相当する従来の配線接
続部の詳細であって、（ａ）は平面図、（ｂ）は側面図
である。図３に示すように、従来の配線接続部は、ワイ
ヤ５１のウェッジボンディング部５２の上にボールボン
ディング方式の接着法により、ワイヤ５１と同一材料で
あるＡｕのボールを接着して金属突起５３を形成したも
のである。このように金属突起５３を形成することによ
り、ウェッジボンディング部５２上に第１ボンド点接合
部と同程度の厚さの厚膜部が形成されるので、ウェッジ
ボンディング部５２は補強され、第１ボンド点接合部と
同様に信頼性の高い接合部が得られるとされている。FIGS. 3A and 3B show details of a conventional wiring connection portion corresponding to the wire bonding method described in Japanese Patent Application Laid-Open No. 11-163026, wherein FIG. 3A is a plan view and FIG. 3B is a side view. As shown in FIG. 3, in the conventional wiring connection portion, a metal ball 53 made of the same material as that of the wire 51 is bonded on the wedge bonding portion 52 of the wire 51 by a ball bonding bonding method. It was formed. By forming the metal protrusions 53 in this manner, a thick film portion having a thickness similar to that of the first bond point bonding portion is formed on the wedge bonding portion 52, so that the wedge bonding portion 52 is reinforced and the first It is said that a highly reliable joint can be obtained as in the case of the bond joint.

【０００５】[0005]

【発明が解決しようとする課題】ところが、従来のウェ
ッジボンディングでは、ワイヤ５１をリードフレーム５
５の表面に押しつけながらカットするため、ウェッジボ
ンディング部５２の肉厚は必ずワイヤ５１よりも薄くな
る。そして、ウェッジボンディング部５２の肉厚の薄い
部分に図３に示す金属突起５３を形成した場合であって
も、ウェッジボンディング部５２と金属突起５３との境
界点５４の肉厚は変わらないため、ワイヤ５１の破断は
この境界点５４近傍で発生する可能性がある。However, in the conventional wedge bonding, the wire 51 is connected to the lead frame 5.
Since the wedge bonding portion 52 is cut while being pressed against the surface of the wire 5, the thickness of the wedge bonding portion 52 is always smaller than that of the wire 51. Then, even when the metal projection 53 shown in FIG. 3 is formed in the thin portion of the wedge bonding portion 52, the thickness of the boundary point 54 between the wedge bonding portion 52 and the metal projection 53 does not change. Breakage of the wire 51 may occur near the boundary point 54.

【０００６】また、ウェッジボンディングでは、リード
フレーム５５の表面に対してワイヤ５１が斜めに入射す
るので、ボンディング後にはリードフレーム５５の表面
とワイヤ５１との間に楔状の隙間ができてしまう。この
ため、発光素子およびリードフレーム５５のボンディン
グエリアを含めて樹脂封止したとき、内部に残っている
水分がリフロー等の工程中で加熱されて封止樹脂中で水
蒸気となって膨張し、この膨張によってワイヤがリード
フレーム５５から剥離してしまうことがある。In the wedge bonding, since the wire 51 is obliquely incident on the surface of the lead frame 55, a wedge-shaped gap is formed between the surface of the lead frame 55 and the wire 51 after bonding. For this reason, when resin sealing is performed including the bonding area of the light emitting element and the lead frame 55, the moisture remaining inside is heated during a process such as reflow and expands as water vapor in the sealing resin. The wire may peel off from the lead frame 55 due to the expansion.

【０００７】また、このような封止樹脂の膨張だけでな
く、封止樹脂を型成形するときには高温の溶融樹脂が注
入され常温中で冷却されるので、溶融樹脂が冷却硬化す
るときの熱応力およびこれに基づく内部応力の変化によ
ってワイヤ５１に引張りが作用する。さらに、使用環境
の温度変化によっても、封止樹脂の応力は様々に変動し
て、同様にワイヤ５１に引張りを作用させる。したがっ
て、この引張りによって、ワイヤ５１自身が破断した
り、ボンディング面からの剥離と破断とが同時に起きた
りする。In addition to such expansion of the sealing resin, when the sealing resin is molded, a high-temperature molten resin is injected and cooled at room temperature. Further, a tension acts on the wire 51 due to a change in internal stress based on the tension. Further, the stress of the sealing resin varies in various ways due to a temperature change in the use environment, and similarly, the wire 51 is pulled. Therefore, the pulling causes the wire 51 itself to break, and peeling and breaking from the bonding surface occur simultaneously.

【０００８】そこで、本発明においては、ウェッジボン
ディングにより肉厚の薄くなったワイヤの破断を防止す
るワイヤボンディング方法を提供する。Accordingly, the present invention provides a wire bonding method for preventing breakage of a wire whose thickness has been reduced by wedge bonding.

【０００９】[0009]

【課題を解決するための手段】上記課題を解決するため
本発明は、ウェッジボンディングされたワイヤの接合部
の上からボールボンディングを行うワイヤボンディング
方法であって、ボールボンディングをワイヤの線径部分
を含めて行うことを特徴とする。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a wire bonding method for performing ball bonding from above a bonded portion of a wedge-bonded wire. It is characterized by performing including.

【００１０】これにより、ウェッジボンディング部の肉
厚を厚くすることができ、また、ワイヤの線径部分が接
合される領域を増やすことができるため、ウェッジボン
ディングされたワイヤの剥離および断線を防止すること
が可能となる。As a result, the thickness of the wedge-bonded portion can be increased, and the area where the wire diameter portion is joined can be increased, thereby preventing the wedge-bonded wire from peeling and breaking. It becomes possible.

【００１１】[0011]

【発明の実施の形態】請求項１に記載の発明は、ウェッ
ジボンディングされたワイヤの接合部の上からボールボ
ンディングを行うワイヤボンディング方法であって、前
記ボールボンディングを前記ワイヤの線径部分を含めて
行うことを特徴とするワイヤボンディング方法であり、
ウェッジボンディング部の肉厚を厚くすることができ、
また、ワイヤの線径部分が接合される領域を増やすこと
ができるため、封止樹脂の熱応力や内部応力の変化によ
るワイヤへの引張り作用によるリードフレーム等の導通
材からのワイヤの剥離および断線を防止できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention according to claim 1 is a wire bonding method for performing ball bonding from above a bonded portion of a wedge-bonded wire, wherein the ball bonding includes a wire diameter portion of the wire. A wire bonding method characterized by performing
The thickness of the wedge bonding part can be increased,
Further, since the area where the wire diameter portion of the wire is joined can be increased, the wire is peeled and disconnected from a conductive material such as a lead frame due to a tensile action on the wire due to a change in thermal stress or internal stress of the sealing resin. Can be prevented.

【００１２】以下、本発明の実施の形態について図面を
参照して説明する。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

【００１３】図１は本発明の実施の形態における配線接
続部の詳細であって、（ａ）は平面図、（ｂ）は側面
図、図２は図１のＡ−Ａ線断面図である。FIGS. 1A and 1B show details of a wiring connection portion according to an embodiment of the present invention. FIG. 1A is a plan view, FIG. 1B is a side view, and FIG. .

【００１４】図において、本発明の実施の形態における
ワイヤボンディング構造は、従来の方法によりリードフ
レーム４上にウェッジボンディングされた金のワイヤ１
の接合部（ウェッジボンディング部）２の上から従来の
方法により金のボールボンディングを行うに際し、ワイ
ヤ１の線径φ部分を含めてボールボンディングを行うこ
とによりボンディング部３を形成したものである。Referring to FIG. 1, a wire bonding structure according to an embodiment of the present invention is a gold wire 1 wedge-bonded onto a lead frame 4 by a conventional method.
When gold ball bonding is performed from above on the bonding portion (wedge bonding portion) 2 by a conventional method, the bonding portion 3 is formed by performing ball bonding including the wire diameter φ portion of the wire 1.

【００１５】本実施形態におけるワイヤボンディング方
法によれば、このようにボールボンディングをワイヤ１
の線径φ部分を含めて行うことで、接合部２の肉厚を厚
くすることができる。また、接合部２に形成されるリー
ドフレーム４とワイヤ１との合金層と金の層との境界面
は破断しやすいが、ワイヤ１の線径φ部分を含めてボー
ルボンディングを行うことでこの境界面は覆われるた
め、接合部２の破断を防止することができる。According to the wire bonding method of this embodiment, the ball bonding is performed by the wire 1 in this manner.
The thickness of the joint portion 2 can be increased by including the wire diameter φ portion. The interface between the gold layer and the alloy layer of the lead frame 4 and the wire 1 formed at the joint 2 is easily broken. However, by performing ball bonding including the wire diameter φ of the wire 1, Since the boundary surface is covered, it is possible to prevent the joint 2 from breaking.

【００１６】さらに、線径φ部分をリードフレーム４へ
押しつけるため線径φ部分とリードフレーム４が接続さ
れる領域が拡がり、あるいはリードフレーム４とワイヤ
１との隙間が小さくなるので、接合強度が高くなるとと
もに、後に樹脂封止する際の封止樹脂の入り込み量が少
なくなる。したがって、表面実装時の加熱によって接合
部２にかかる樹脂応力が小さくなり、また樹脂応力に対
する接合強度も強くなり、ウェッジボンディングされた
ワイヤ１の破断を防止した信頼性の高い半導体装置が得
られる。Furthermore, since the wire diameter φ portion is pressed against the lead frame 4, the area where the wire diameter φ portion is connected to the lead frame 4 is expanded, or the gap between the lead frame 4 and the wire 1 is reduced, so that the bonding strength is reduced. As the height increases, the amount of the sealing resin entering when the resin is sealed later decreases. Therefore, the resin stress applied to the bonding portion 2 due to heating during surface mounting is reduced, and the bonding strength with respect to the resin stress is also increased, so that a highly reliable semiconductor device that prevents breakage of the wedge-bonded wire 1 can be obtained.

【００１７】[0017]

【発明の効果】本発明によれば、ボールボンディングを
ワイヤの線径部分を含めて行うことで、ウェッジボンデ
ィング部の肉厚を厚くすることができ、またワイヤの線
径部分が接合される領域も広くなるため、ウェッジボン
ディングされたワイヤの破断を防止した信頼性の高い半
導体装置が得られる。According to the present invention, by performing the ball bonding including the wire diameter portion of the wire, the thickness of the wedge bonding portion can be increased, and the area where the wire diameter portion is bonded can be increased. Therefore, a highly reliable semiconductor device that prevents breakage of wedge-bonded wires can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の実施の形態における配線接続部の詳細
であって、（ａ）は平面図 （ｂ）は側面図FIGS. 1A and 1B are details of a wiring connection portion according to an embodiment of the present invention, wherein FIG. 1A is a plan view and FIG.

【図２】図１のＡ−Ａ線断面図FIG. 2 is a sectional view taken along line AA of FIG. 1;

【図３】従来の配線接続部の詳細であって、（ａ）は平
面図 （ｂ）は側面図3A and 3B are details of a conventional wiring connection portion, where FIG. 3A is a plan view and FIG.

【符号の説明】[Explanation of symbols]

１ ワイヤ ２ 接合部 ３ ボンディング部 ４ リードフレーム DESCRIPTION OF SYMBOLS 1 Wire 2 Bonding part 3 Bonding part 4 Lead frame

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 ウェッジボンディングされたワイヤの接
合部の上からボールボンディングを行うワイヤボンディ
ング方法であって、前記ボールボンディングを前記ワイ
ヤの線径部分を含めて行うことを特徴とするワイヤボン
ディング方法。1. A wire bonding method for performing ball bonding from above a bonding portion of a wedge-bonded wire, wherein the ball bonding is performed including a wire diameter portion of the wire.
JP2001131455A 2001-04-27 2001-04-27 Wire bonding method Expired - Lifetime JP3945184B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001131455A JP3945184B2 (en) 2001-04-27 2001-04-27 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001131455A JP3945184B2 (en) 2001-04-27 2001-04-27 Wire bonding method

Publications (2)

Publication Number Publication Date
JP2002329740A true JP2002329740A (en) 2002-11-15
JP3945184B2 JP3945184B2 (en) 2007-07-18

Family

ID=18979642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001131455A Expired - Lifetime JP3945184B2 (en) 2001-04-27 2001-04-27 Wire bonding method

Country Status (1)

Country Link
JP (1) JP3945184B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006302963A (en) * 2005-04-15 2006-11-02 Rohm Co Ltd Semiconductor device and method of manufacturing the same
US8553844B2 (en) 2007-08-16 2013-10-08 Koninklijke Philips N.V. Hybrid design of an anode disk structure for high prower X-ray tube configurations of the rotary-anode type

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006302963A (en) * 2005-04-15 2006-11-02 Rohm Co Ltd Semiconductor device and method of manufacturing the same
US8604627B2 (en) 2005-04-15 2013-12-10 Rohm Co., Ltd. Semiconductor device
US8553844B2 (en) 2007-08-16 2013-10-08 Koninklijke Philips N.V. Hybrid design of an anode disk structure for high prower X-ray tube configurations of the rotary-anode type

Also Published As

Publication number Publication date
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