JPH01280767A - Semiconductor and its production - Google Patents

Abstract

PURPOSE:To decrease the deposition of the resultant products of corona discharge on the surface of a photosensitive body consisting of plural amorphous material layers and to facilitate the removal thereof by packing fine particles into the recesses of the surface layer of the photosensitive body, then polishing the surface layer, thereby smoothing the surface. CONSTITUTION:The fine particles 39 are packed into the recesses of the surface protective layer 38 of the photosensitive body 34 constituted by laminating the plural amorphous material layers 36, 37, 38 contg. silicon on a conductive base 26 and thereafter, the surface layer is polished. The surface of the photosensitive body 34 is thereby smoothed and the substantial surface area is reduced. The absolute deposition of the resultant products of the corona discharge is thus decreased and the removal of the resultant products of the corona discharge is facilitated.

Description

[Detailed description of the invention]

[Objective of the Invention] (Industrial Application Field) The present invention relates to a photoconductor comprising an amorphous material layer that forms an electrostatic latent image in an image forming apparatus such as a copying machine, a laser beam printer, or an LED printer. It relates to its manufacturing method. (Prior Art) In recent years, photoconductor materials for image forming apparatuses, which are photoconductors, have conventionally been made of selenium [Se], selenium-tellurium (Se-
Te3. Inorganic photoreceptor materials such as cadmium sulfide (CDS) and organic photoreceptor materials (hereinafter referred to as OPC) such as poly-N-vinylcarbazole (hereinafter referred to as PCV) and trinitrofluorene (hereinafter referred to as TNF). It has a high surface hardness, excellent abrasion resistance and heat resistance, and is non-polluting, so there is no need for recovery treatment, and it also has spectral sensitivity in a wide range from visible light to near-infrared light. Amorphous materials containing silicon [Si], such as amorphous silicon (hereinafter referred to as (a-3j)) and microcrystalline silicon (hereinafter referred to as (μC-5j)), have attracted attention. Specifically, in order to obtain sufficient charging ability, photoreceptors are required to have high resistance, high spectral sensitivity, and stability in repeat characteristics.
In order to satisfy these characteristics, an electrophotographic photoreceptor was developed in which a charge injection blocking layer and a photoconductive layer 2 surface protection layer were laminated on a conductive support, as shown in Figure 5, instead of a single layer. There is. That is, in the first conventional example shown in FIG.
charge injection blocking layer (11), thickness 1O-100C11f
fl] photoconductive layer (King 2), thickness 0, 01-10C
ttm] surface protective layer (13) is laminated thereon. Here, the charge injection blocking layer (11) is made of P as the first material.
type or N type ("-"'l) + amorphous silicon germanium (hereinafter referred to as (a-3iGe)),
Amorphous silicon germanium carbide (hereinafter (a-3)
j, GeC). ), amorphous silicon nitride (
Hereinafter, it will be referred to as (a-3iN). ), amorphous silicon oxide (hereinafter referred to as (a-3iO)), etc., prevents the injection of (negative) or (positive) charges from the support (10), so that the photoconductor (14) has a charge retention ability. It is preferable for both to contain hydrogen or a halogen element, and as impurities for controlling valence electrons, boron [B] for P-type, gallium [G8] group [■a] element of the periodic table, etc. However, for the N-type, phosphorus CP] and arsenic (As) are elements of group [VA] of the isochronous table.As the second material of the charge injection blocking layer (11), (a- 3iC), (a-5iN)
, (a-5iO), a high-resistance amorphous material such as amorphous boron nitride (hereinafter referred to as (a-BN)), or aluminum CA1'J, titanium i:Tj, ],
There are oxides such as zinc (zn), nitrides, carbides, and high-resistance insulating materials such as heat-resistant polymers such as polyimide and fluororesin.
By blocking the injection of (positive) and/or (negative) charges from 0), the photoreceptor (14) is given a charge retention ability. The photoconductive layer (12) then absorbs light;
It is capable of efficiently generating pairs of electrons and holes, and rapidly transporting the simultaneously generated electrons and holes toward the support (10) or the surface using an electric field. For this reason, in extreme P-type or N-type, one of the carriers recombines and cannot transport charges, so it is desirable to use a material whose Fermi level is located approximately in the center of the forbidden band.
a-5j, ) , (a-5iGe) r (a-5i
,C), (a-5iGeC), (a-3iN)
. (a-5j, C), amorphous silicon nitride carbide (
Hereinafter referred to as (a-5j, CN). ), and it is preferable that any of them contain hydrogen or a halogen element. In addition, synchronous law group [ma:l] elements and synchronous law group [■a] elements, which are impurities for controlling valence electrons, can also be included as long as they position the Fermi level near the center of the forbidden band. For example, (a-5i) (7
), the element in group [■a] of the synchronous table is 0.001-10
By adding (PPM), the Fermi level can be brought closer to the center of the forbidden band. Next, the surface protective layer (13)
Because of its purpose, it has high mechanical strength, strong chemical stability, and can efficiently transmit the light that should be absorbed by the photoconductive layer (12). It is desirable to have the ability to efficiently transport the injected carriers to the surface, and (a-3iC) + (a-5i
N) + (a-5iO), (a-3iCN) +
Silicon [Sj), carbon [C], nitrogen [N], oxygen such as (a-BN)

[0], boron [B], etc., and has a specific resistance value of 1.011 [Ω(1)] or more, more preferably a high specific resistance value of 1.0'' (Ω■) or more. Examples include amorphous resistive materials, which may or may not contain hydrogen or halogen elements.Furthermore, aluminum [A-gen, titanium [Tj], zinc [
Zn:l. Oxides, nitrides, carbides such as silicon [Si3, etc., or high-resistance polymers are also applicable. FIG. 5(B) shows a second conventional example in which the portion corresponding to the photoconductive layer (12) of the first conventional example is replaced with a carrier generation layer (16) and a carrier transport layer (17). The carrier generation layer (16) focuses on light absorption and the generation of electron and hole pairs, while the carrier transport layer (17) focuses on transport of generated carriers and charge retention ability. However, it is more desirable that the carrier generation layer (16) also has a high carrier transport ability. On the other hand, generally, the optical band gap of the carrier generation layer (16) is narrower than the optical band gap of the carrier transport layer (17), and the carrier generation layer (16) For example, a carrier generation layer (
16), (a-3j, ), (a-3iGe
). An amorphous material such as (a-3iGeC) is suitable, and as the carrier transport layer (17), (a-5, +, ) + (a-3
Amorphous materials such as xC) + (a-3j, N) are suitable. Furthermore, the third conventional example shown in FIG.
), and in the fourth conventional example shown in FIG. The first carrier transport layer (18a) and the second carrier transport layer (1
, 8b). Further, the fifth conventional example shown in FIG. 5(e) is the carrier transport layer (17) of the second conventional example.
The top layer (20), which has a carrier transport function corresponding to , also has a surface protection function, and the sixth conventional example shown in FIG. (
18b) having a carrier transport function corresponding to
21) also has a surface protection function. However, in these various conventional photoreceptors,
After long-term use, the surface resistance of the photoreceptor surface decreases and the amount of electrical charge decreases, resulting in blurred or blurred images and eventually the inability to form images. This phenomenon is particularly noticeable under humid conditions. This image deletion is caused by ozone containing electrolyte generated during corona discharge during the photoreceptor's main charging process, transfer process, peeling process, static elimination process, etc.
], various nitrogen compounds, metal oxides, and other oxygen compounds gradually adhere to the surface of the photoreceptor, and water is further adsorbed. Furthermore, the aforementioned silicon [Si
In a conventional photoreceptor in which amorphous materials including 3 are laminated, no matter how smooth the surface of the support is, problems arise due to the film formation process of each layer. For example, in the first conventional example, As shown in FIG. 6 (a), the surface of the surface protective layer (13) is uneven, and the actual surface area is large, and the amount of corona discharge products attached is increased, and the corona discharge products attached to the recesses are generated. Objects are difficult to remove, and these deposits are considered to be a cause of image deletion. Incidentally, among the irregularities on the surface of this surface protective layer (13), large corrugations (13
While a) reflects the unevenness at the interface between the photoconductive layer (12) and the surface protective layer (13), the pitch (13b) of small unevenness of 0.5 (tnn) or less mainly reflects the unevenness of the surface protective layer (13). This is the unevenness that occurs during film formation. In order to prevent such image blurring, the surface of the photoreceptor may be dehumidified by heating so that the photoreceptor does not absorb moisture, or the surface of the photoreceptor may be wiped with a removal liquid, or it may be removed by mechanical means such as Plate 1. Attempts have been made to remove the kimono, but this has not been very effective. On the other hand, in order to prevent unevenness during film formation, the film growth rate was set to 2 reaction conditions. Although consideration has been given to film forming conditions such as the thickness of the two layers of raw materials used, no fundamental solution has been reached and image blurring cannot be prevented. For this reason, as shown in Figure 6 (b), filler (1
5) has been developed to prevent corona discharge products from adhering to the recessed portions, but in such devices, the surface area occupied by the filled portions is large relative to the surface of the photoreceptor. Moreover, since a material with a high resistance is used as a filler to maintain the charging characteristics of the photoreceptor, image formation in the filled portion becomes impossible, and image defects in the form of black dots occur on the formed copy image. During repeated use, the filling portion is worn or peeled off due to sliding contact with the cleaning plate 1, etc., and deposits are formed there, resulting in deterioration of characteristics. (Problems to be Solved by the Invention) Conventionally, the amount of corona discharge products attached increases due to the unevenness formed on the surface of the photoreceptor due to the film forming process during film formation, and the amount of corona attached to the recesses increases. Since it is difficult to remove the discharge products, the surface resistance of the photoreceptor decreases after long-term use, and the charging ability deteriorates, causing image blurring and significantly deteriorating the image quality. have. Therefore, the present invention aims to eliminate the above-mentioned drawbacks by reducing the amount of corona discharge products adhering to the surface of the photoreceptor, and furthermore, by making it easier to remove the corona discharge products, the surface resistance of the photoreceptor is reduced. An object of the present invention is to provide an electrophotographic photoreceptor that can obtain good images by preventing the occurrence of image deletion, and a method for manufacturing the same. [Structure of the Invention] (Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides that after filling the recesses of the surface layer of a photoreceptor made of a plurality of amorphous material layers, The layer is polished to make it smooth. (Function) The present invention uses the above-mentioned means to smooth the surface of the photoreceptor, thereby reducing the amount of corona discharge products attached, making it easier to remove them by cleaning, etc., and preventing image deletion. The purpose is to improve image quality, prevent image defects such as black spots, and stabilize photoreceptor characteristics. (Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 1 to 3. Plasma CVD (Chemi
-Cal Vapor Deposition) was carried out in a reaction vessel (24) containing a cylindrical aluminum support (26) with a surface roughness of 0.1 [4 ml or less and a diameter of 78 nwul]. In order to support
A support (27) is provided which includes a heater (not shown) and is rotated by a motor (27b).
27) There is a 13.56 [MHz] high frequency power source (
A cylindrical electrode (28) connected to 29) is provided,
Furthermore, one side of the support (27) J is filled with silane gas (S'-1).
14) A gas introduction pipe (30) is provided for supplying +diborane gas 1:B, H, ), etc. as necessary. On the other hand, (31) is a polishing chamber, which is rotated by a motor (32a) to support the support (26).
2) is provided, and furthermore, by the suppression device (35),
Two sponge-like polishing cloths (33a), a first and a second polishing cloth, which can be pressed against a support (26) which is applied to the polishers (32). (33b) is provided. Also, (34) is a photoconductor, which is a photoreceptor, and P-type hydrogenated amorphous silicon (hereinafter referred to as ( a-3i: a first charge injection blocking layer (36) consisting of H);
(a-5i:H) second photoconductive layer (37)
A third surface protection layer (38) made of hydrogenated amorphous silicon carbide (hereinafter referred to as (a-3jC: H)) whose recesses are filled with alumina fine particles (39) is laminated. When forming the photoreceptor (34) in the reaction container (24), after placing the support (26) on the support rod (27), the reaction container (24) is removed by an exhaust device (not shown). While evacuating the inside of the support body (
26) is heated to 300 [''C]. Next, silane gas [Sj, H4] is heated at 10001:
SCCM), diborane gas l:B2H,l [:B2
ll6/5j144:L is introduced into the reaction vessel (24) so that 1 is 2X10-', and while maintaining the pressure inside the reaction vessel (24) at 0.5 [Torr] with an exhaust device (not shown), While the support body (26) is rotated by the motor (27b), the high frequency power source (29) is used to power the support body (26) at 0.5 (KW).
A power of
, 5 (/[) of the charge injection blocking layer (36). After this, silane gas C511 is added to the reaction vessel (24).
14:l to 2000 [SCCM:l, diborane gas C
B21L; ] is (B2Hb/ Sll+4 ] is lX
10-7, and the reaction pressure was set to 0.5 [Tor].
r), a high frequency power of 1.01:K11l) was applied for 1 hour, and a film thickness of 48 cm (a-5j: H) was obtained.
A photoconductive layer (37) of [μm] is formed. Next, 100% of silane gas (SiH3F) was added to the reaction vessel (24).
0 [SCCM], methane gas [CH,) (CIf
4/S I H4) was 4, and while maintaining the reaction pressure at 0.5 [Torr], the reaction pressure was 0.5 (KW
:1 high frequency power was applied for 2 minutes, and (a-3j, C
: If) with a film thickness of 1 (μm:l).
8), all film forming steps are completed, the heater (not shown) is stopped, and the temperature of the support (26) is 1.00 [
℃], the support (26) is taken out from the reaction vessel (24). Next, in a filling device (not shown), while rotating the support (26) and applying pressure with a plate (not shown), fine alumina particles (39) surface-treated with tetrafluoroethylene resin (Teflon) dispersion are loaded. The recesses of the surface protection layer (38) are filled. Next, the support (26) is taken out from the filling device (not shown) and placed in the polishing chamber (31).
)'s shirt h (32) is 1~. On the other hand, the first polishing cloth (33a) contains silica (S) with a particle size of 2 [μtll].
A butane solution is permeated into the Norman in which the polishing chamber (31) is dispersed, and the shaft (32 ) to 1. While rotating at OOO [r, p, n+1], the first polishing cloth (33a) is pressed against the surface protective layer (38) of the photoreceptor (34) for 10 [minutes] and polished. After this, a second polishing cloth (in which Normann hebutane solution in which silica (SiO□) with a particle size of 0.3 [μm] was dispersed was impregnated (
33b) is pressed onto the surface protective layer (38) for about 10 minutes and polished to complete the photoreceptor (34). Furthermore, this photoreceptor (
When the surface roughness of 34) was measured using a surface roughness meter with a stylus tip diameter of 2 [μm], the surface roughness was 0.2 [μmRmax
) (L = 0.081:mm). Further, the photoreceptor (34) thus formed was actually installed in a copying machine (not shown) and heated to a temperature of 30['C]. When 50,000 copies were made in an environment with relative humidity of 80%, the surface roughness was 0.5[μmRmax] (L) without filling with alumina particles (39) and polishing the surface.
= 0.08 [nwnl) in the conventional photoreceptor,
After 5,000 sheets, image blurring gradually started to occur, but from the beginning to the end, high-resolution images could be obtained without any deterioration in image quality. Incidentally, [Table 1] shows the film forming conditions of the first example. [Table 1] With this configuration, the alumina fine particles (39) are filled in the recesses of the surface protective layer (38), and the photoconductor (3)
The surface roughness of photoconductor (3) is significantly improved.
4) Substantial surface area can be reduced, the absolute amount of corona discharge products attached can be reduced, and the attached corona discharge products can be easily removed, resulting in lower surface resistance even after long-term use. This prevents deterioration in image quality due to image deletion, and makes it possible to extend the life of the photoreceptor. In addition, the surface area of the alumina fine particles (39) is also reduced by polishing, which prevents the formation of black spots on the image due to the inability to form an image, which prevents deterioration in image quality, and also protects the surface of the surface protection layer by sliding contact with a cleaning blade, etc. (38) The above impact is alleviated, and the filled alumina particles (39) will not be significantly worn or detached even after long-term use, and the photoreceptor characteristics will be stabilized over a long period of time. It becomes possible. Next, a second embodiment of the present invention will be described with reference to FIG. In this embodiment, silica fine particles are filled into the recesses of a surface protective layer (44) of a photoreceptor (41), which is a photoconductor, and the same parts as in the first embodiment are given the same reference numerals. The explanation will be omitted. Incidentally, as shown in FIG.
i:H) first charge injection blocking layer (42)
, a second photoconductive layer (43) consisting of (a-3i: H), silica fine particles (46) having an electrical resistance value of 1o1.2 [Ω(7)] or more and surface-treated with dimethyl-based silicone resin in the concave portions. A third surface protective layer (44) made of hydrogenated amorphous silicon nitride (hereinafter referred to as (a-5jN: II)) filled with is laminated. Although the film-forming conditions are set as shown in Table 2, the film-forming process is the same as in the first example, in which the film is first deposited on the support (26) in the reaction vessel (24). Chargeable adhesion stop layer (42), photoconductive layer (43), surface protective layer (
44) to complete all film forming steps. Below is the margin [Table, 2] Next, take out the support (26) from the reaction container (24),
While rotating the support (26) in a filling device (not shown) and applying pressure with a blade (not shown), fine silica particles (46) are filled into the recesses of the surface protection layer (44). Thereafter, this support (26) is placed on the shirt 1-(32) of the polishing chamber (31), and the first polishing cloth (33a) and the second polishing cloth are placed in the same manner as in the first embodiment. Polishing cloth (33b
) to polish the surface of the photoreceptor (34).
complete. The surface roughness of this photoreceptor (34) is 0.
．． 16 [μmRmax) (L=0.081:nu:l
)Met. Then, this photoreceptor (51) was actually mounted and exposed to 50% of
After making 10,000 copies, silica particles (46) were found.
The surface roughness was 0.4 μ without filling and surface polishing.
mRmax] (L = 0.08 [nwn]), image blurring gradually occurred after 9,000 sheets and the image quality deteriorated, whereas the image quality remained constant from the beginning to the end. High-resolution images were obtained without any change in image quality. With this configuration, as in the first embodiment, the amount of attached corona discharge products is reduced compared to the conventional method, and the attached corona discharge products can be easily removed, so that it can be used for a long time. Image deletion phenomenon can be prevented and the life of the photoreceptor (41) can be extended. In addition, the surface polishing reduces the surface area of the silica particles to an extent that does not cause black spots on the image, thereby preventing deterioration in image quality and preventing the silica particles (46) from being worn out or falling off due to sliding contact with a cleaning blade, etc. Igo 9- This is prevented, and the characteristics of the photoreceptor are stabilized over a long period of time. Note that the present invention is not limited to the above-mentioned embodiments, and various design changes are possible, and the surface roughness of the photoreceptor is also arbitrary, but it should be at least 0.2 [ImRmax) (L = 0.08 (nn+)).
Below, smaller is preferable. In addition, the polishing method and time are arbitrary, and magnetic polishing, chemical polishing called gas phase or liquid phase etching, and field-assisted fine polishing (FFF) using magnetic fluid are also available.
Fi-nj (abbreviation for shing), plasma-based FFF
, lapping, or other polishing with higher precision may be used. In addition to silica [S10□], alumina [AQ203], iron oxide [Fe2O3], and nitrogen carbide (
C3N4] Other fine powders may also be used. Furthermore, the structural thickness of the photosensitive layer of the photoreceptor is arbitrary, and the boundaries between each layer are not clearly defined; for example, by continuously changing the concentration of each raw material gas during film formation, it is possible to The components may be changed gradually, and the photoreceptor as a whole may have a plurality of layer regions with different functions.
In this way, defects at the boundaries between the layers can be prevented, and the adhesion between the layers can be improved. Also, plasma CV
The raw materials for each layer by method D include silicon (Si:l), as well as silane gas (l:siH,3), disilane gas (Sx2 Hs), trisilane gas [SF,
3 H4F + silicon tetrafluoride gas] SiF, ], etc. may be used, and raw materials for the electronic control element include diborane [B21 (G), phosphine f:P), 131.3 boron fluoride [BF3], arsine ( AsH3), etc., and stabilizing raw materials include germane [GeH, ],
Methane [:CH4:l. There are gases such as ethylene [C2H4], nitrogen (N2), ammonia [NH3], oxygen [0□], nitrogen oxide [NzO], etc.Film forming methods include plasma CVD and reactive sputtering. , ion blasting, vacuum evaporation, etc. Furthermore, there are no limitations on the material or particle size of the fine particles and the resin that performs their surface treatment, and materials for the fine particles include silica, alumina, titanium oxide, glass beads, and talc. , inorganic fine powder such as metal oxide, or organic fine powder such as Teflon, silicone resin, styrene resin, acrylic resin, etc., and the particle size is preferably at least 3 [μm] or less so that it can be filled into the recesses of the surface layer. is on the order of millimeters (μm), and furthermore, as a characteristic, it is desirable that the electrical resistance value is 1012 [Ω■] or more so as not to deteriorate the charging characteristics of the photoconductor.Also, when performing surface treatment of fine particles, is acrylic resin,
Vinyl acetate resin, vinyl chloride resin, polyester, polyurethane, and combinations of the above resins may also be used. [Effects of the Invention] As explained above, according to the present invention, even in a photoreceptor having multiple layers, the surface roughness can be reduced compared to the conventional method by filling the concave portions of the surface layer with fine particles. The amount of discharge products adhered to the photoreceptor is reduced, corona discharge products are also easier to remove, preventing deterioration of surface resistance due to long-term use, and reducing image quality due to image deletion. The lifespan of the product will be extended. Furthermore, by polishing the surface layer, the substantial surface area of the part filled with fine particles, which is the part where no image can be formed, is reduced together with the photoreceptor, so there is no black spot on the image-1- as in the conventional case, and the image quality is improved. In addition to preventing deterioration, sliding contact with a cleaning blade or the like becomes smooth, preventing abrasion or falling off of fine particles, and stabilizing the characteristics of the photoreceptor over a long period of time.

[Brief explanation of the drawing]

1 to 3 show a first embodiment of the present invention.
Figure 2 is a schematic diagram of the reaction vessel, Figure 2 is a schematic diagram of the polishing chamber, Figure 3 is a partial sectional view of the photoreceptor, and Figure 4 is the photoreceptor according to the second embodiment of the present invention. A partial cross-sectional view of
5 and 6 show a conventional device, and FIG. 5(a) is a partial sectional view of a photoreceptor of the first conventional example, and FIG. 5(b) is a photoreceptor of the second conventional example. Partial cross-sectional view of the body, Figure 5 (c)
is a partial cross-sectional view of the photoreceptor of the third conventional example, FIG. 5(d) is a partial cross-sectional view of the photoreceptor of the fourth conventional example, and FIG.
E) is a partial cross-sectional view of the photoreceptor of the fifth conventional example, FIG.
Figure (a) is a partial cross-sectional view of the surface of Figure 5 (a), which is enlarged.
FIG. 6(B) is a partial cross-sectional view showing a state in which FIG. 6(A) is filled with a filler material. 24... Reaction container, 26... Support, 27b...
...Motor, 27. Support rod, 28. Electrode, 30. Gas introduction pipe, 31. Polishing chamber.
32... Shaft, 33a... First polishing cloth, 33b... Second polishing cloth, 34... Photoreceptor,
38...Surface protective layer, 39...Alumina fine particles. Agent Patent attorney Inoue - Male No. 1 Figure 6 - 6 - Votes 111 - Written amendment to the procedure (formality) Commissioner of the Japan Patent Office Kunio Ogawa 1. Indication of the case 1988 Patent Application No. 279069 No. 2, Name of the invention Photoconductor and its manufacturing method 3, Relationship with the case of the person making the amendment Patent applicant (307) Co., Ltd. 1 Shiba (,yo, ka, □ name) 4, Agent address: 144 Tokyo No. 4-41-11 Kamata, Ota-ku, Tokyo - Tsunoda Building, Benjo Patent Office 5, Date of amendment order: February 23, 1988 6, Drawing subject to amendment: Plane 7, Contents of amendment: Drawing No. 5 (a) Figure 6 (b) has been amended to read Figure 6 (a) and Figure 6 (b) as shown in the attached sheet. η ~ ＼ 0

Claims (1)

[Claims] 1. In a device in which multiple layers of amorphous material containing silicon are laminated on a conductive support, fine particles are filled into the recesses formed on the surface and smoothed by polishing. A photoconductor comprising an amorphous material layer as a surface layer. 2. Surface roughness is 0.2 [μmRmax] (L=0.08
[mm]) or less. 3. The photoconductor according to claim 1 or 2, wherein the component amount at the boundary of each of the plurality of amorphous material layers is changed to have a gradient. . 4. After completing the film-forming process of laminating multiple silicon-containing amorphous material layers in a reaction vessel containing a conductive support and containing a silicon-containing reaction gas, the surface layer recesses are filled with fine particles. and then polishing the surface layer. 5. The method for manufacturing a photoconductor according to claim 4, characterized in that during the film-forming process, a reactive gas is exchanged for each amorphous material layer. 6. The method for producing a photoconductor according to claim 4, wherein the components of the reaction gas are gradually exchanged during the film forming step.